• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.446-449
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• 2008

Organic light emitting diodes (OLEDs) with multiple organic layers were fabricated to obtain and to evaluate an equivalent resistance and an equivalent capacitance of OLED device. The staircase voltage with an increasing period and a constant period was designed and applied to the OLED. The resistance of OLED was found to decrease from $270\;k{\Omega}$ to $2\;K{\Omega}$ as applied voltage increased after turn on. The equivalent capacitance of OLED maintained unchanged at low voltage level and deceased after showing peak value as the applied voltage increased.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.706-711
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• 2014

A low power 6-bit flash ADC that uses an input voltage range detection algorithm is described. An input voltage level detector circuit has been designed to overcome the disadvantages of the flash ADC which consume most of the dynamic power dissipation due to comparators array. In this work, four digital input voltage range detectors are employed and each input voltage range detector generates the specific clock signal only if the input voltage falls between two adjacent reference voltages applied to the detector. The specific clock signal generated by the detector is applied to turn the corresponding latched comparators on and the rest of the comparators off. This ADC consumes 68.82 mW with a single power supply of 1.2V and achieves 4.3 effective number of bits for input frequency up to 1 MHz at 500 MS/s. Therefore it results in 4.6 pJ/step of Figure of Merit (FoM). The chip is fabricated in 0.13-um CMOS process.

• Journal of Power Electronics
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• v.17 no.3
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• pp.590-600
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• 2017

This paper presents a ripple-free input current modified interleaved boost converter for high step-up applications. By integrating dual coupled inductors and voltage multiplier techniques, the proposed converter can reach a high step-up gain without an extremely high turn-ON period. In addition, a very small auxiliary inductor employed in series to the input dc source makes the input current ripple theoretically decreased to zero, which simplifies the design of the electromagnetic interference (EMI) filter. In addition, the voltage stresses on the semiconductor devices of the proposed converter are efficiently reduced, which makes high performance MOSFETs with low voltage rated and low resistance $r_{DS}$(ON) available to reduce the cost and conduction loss. The operating principles and steady-state analyses of the proposed converter are introduced in detail. Finally, a prototype circuit rated at 400W with a 42-50V input voltage and a 400V output voltage is built and tested to verify the effectiveness of theoretical analysis. Experimental results show that an efficiency of 95.3% can be achieved.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.93-101
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• 2002

We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.

• Journal of international Conference on Electrical Machines and Systems
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• v.1 no.4
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• pp.457-463
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• 2012

Cascaded H-bridge multilevel inverters shows a useful circuit configuration to increase the number of output voltage levels to obtain high quality output voltage. By applying the concept of the power of three to dc voltage sources, it can increase the number of output voltage levels effectively. To realize this concept, two approaches may be considered. One is to use independent dc voltage sources pre-scaled in the power of three, and the other is to use instantaneous dc voltage sources generated from a cascaded transformer, which has the secondary turn-ratios scaled in the power of three in sequence. A common feature in both approaches is to use the concept of the power of three for dc voltage sources, and a point of difference is whether it adopts a low frequency transformer or not, and where the transformer is located. According to the difference, application areas are limited and show different characteristics on THD of output voltages. We compare and analyze both approaches for their circuit configurations, voltage level generating method, THD characteristics of output voltage, efficiency, application areas, limitations, and other characteristics by experiments using 500 [W] prototypes when they generate a 27-level output voltage.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.8
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• pp.448-454
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• 1999

This paper describes a new dc-ac inverter system which for achieving sinusoidal ac waveform makes use of parallel loaded high frequency resonant inverter consisting of full bridge. Each one of the pair of switches in the inverter is driven to synchronous output frequency and the other is driven to PWM signal with resonant frequency proportional to magnitude of sine wave. A forced discontinuous conduction mode is used to realize the quasi-sinusoidal pulse in each switching period. Therefore the inverter generates sinusoidal modulated output voltage including carrier frequency that is resonant frequency. Carrier frequency components of modulated output voltage is filtered by low pass filter. Since current through switches is always zero at its turn-on in the proposed inverter, low stress and low switching loss is achieved. Operating characteristics of the proposed system is analyzed in per unit system using computer simulation. The output voltage of if includes low harmonics and it is almost close to sine wave. Also, the theoretical analysis is proved through the experimental test.

• Journal of Power Electronics
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• v.13 no.4
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• pp.592-599
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• 2013

This paper investigates a new isolated single-phase AC-DC converter, which integrates a modified AC-DC buck-boost converter with a DC-DC forward converter. The front semi-stage is operated in discontinuous conduction mode (DCM) to achieve an almost unity power factor and a low total harmonic distortion of the input current. The rear semi-stage is used for step-down voltage conversion and electrical isolation. The front semi-stage uses a coupled inductor with the same winding-turn in the primary and secondary sides, which is charged in series during the switch-on period and is discharged in parallel during the switch-off period. The discharging time can be shortened. In other words, the duty ratio can be extended. This semi-stage can be operated in a larger duty-ratio range than the conventional AC-DC buck-boost converter for DCM operation. Therefore, the proposed converter is suitable for universal input voltage (90~264 $V_{rms}$) and a wide output-power range. Moreover, the voltage stress on the DC-link capacitor is low. Finally, a prototype circuit is implemented to verify the performance of the proposed converter.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1263-1265
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• 2007

The electrical characteristics of low temperature poly-Si (LTPS) thin-film transistors (TFT) with channel parallel and perpendicular to the direction of lateral growth were studied. The poly-Si film was crystallized using sequential lateral solidification (SLS) laser crystallization technique. The channel orientation dependent turn-on characteristics were investigated by using gated-diodes and capacitance-voltage measurements

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.5B no.4
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• pp.366-373
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• 2005

This paper presents two new circuit topologies of the dc busline side active resonant snubber assisted voltage source high frequency link soft switching PWM full-bridge dc-dc power converters acceptable for either utility ac 200V-rms or ac 400V-rms input grid. These high frequency switching dc-dc converters proposed in this paper are composed of a typical voltage source-fed full-bridge PWM inverter, high frequency transformer with center tap, high frequency diode rectifier with inductor input filter and dc busline side series switches with the aid of a dc busline parallel capacitive lossless snubber. All the active switches in the full-bridge arms as well as dc busline snubber can achieve ZCS turn-on and ZVS turn-off transition commutation with the aid of a transformer leakage inductive component and consequently the total switching power losses can be effectively reduced. So that, a high switching frequency operation of IGBTs in the voltage source full bridge inverter can be actually designed more than about 20 kHz. It is confirmed that the more the switching frequency of full-bridge soft switching inverter increases, the more soft switching PWM dc-dc converter with a high frequency transformer link has remarkable advantages for its power conversion efficiency and power density implementations as compared with the conventional hard switching PWM inverter type dc-dc power converter. The effectiveness of these new dc-dc power converter topologies can be proved to be more suitable for low voltage and large current dc-dc power supply as arc welding equipment from a practical point of view.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.439-441
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• 2005

A new LLC resonant converter with multiple outputs is proposed for high efficiency and low cost plasma display panel (PDP) power module. In the proposed converter, ZVS turn-on of the primary MOSFETs and ZCS nun-off of the secondary diodes are guaranteed in the overall input voltage and output load range. Moreover, the primary MOSFETs and the secondary diodes have low voltage stresses clamped to input and the output voltage, respectively. Therefore, the proposed converter shows the high efficiency due to the minimized switching and conduction losses. In addition, by employing the transformer, which has the two and more secondary side, the proposed converter can have multiple outputs and they show the great cross-regulation characteristics. As a result, the proposed converter can be implemented with low cost and compact size. The 500W prototype is implemented, which integrates the sustaining and addressing power supplies of PDP power module. The maximum efficiency is 96.8% and the respective output voltages are well regulated. Therefore, the proposed converter is suitable for high efficiency and low cost PDP power module.