• Journal of the Korean Association of Geographic Information Studies
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• v.14 no.3
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• pp.78-95
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• 2011

This study has developed various DEMs with different spatial resolutions using many different interpolation methods with the aid of a 1:5,000 digital map. In addition, this study has evaluated the vertical accuracy of various DEMs constructed by check point data obtained from the network RTK GPS survey. The obtained results suggest that a DEM developed from the TIN-based Terrain method performs well in evaluating height restriction of buildings in a flying safety area considering general RMSE values, land-type RMSE values and profile evaluation results, etc. And, it has been found that three meters is the right spatial resolution for a DEM in evaluating height restriction of buildings in a flying safety area. Meanwhile, elevation values obtained by the DEM are not point estimation values but interval estimation values. This can be used to check whether the height of buildings in the vicinity of an airfield violates height limitation values of the area. To check whether the height of buildings measured in interval estimation values violates height limitation values of the area, this study has adopted three steps: 1) high probability of violation, 2) low probability of violation, 3) inconclusiveness about the violation. The obtained results will provide an important basis for developing a GIS related to the evaluation of height restriction of buildings in the vicinity of an airfield. Furthermore, although results are limited to the study area, the vertical accuracy values of the DEM constructed from a two-dimensional digital map may provide useful information to researchers who try to use DEMs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.434-434
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• 2012

Despite recent efforts for fabricating flexible transparent conducting films (TCFs) with low resistance and high transmittance, several obstacles to meet the requirement of flexible displays still remain. Indium tin oxide (ITO) thin films, which have been traditionally used as the TCFs, have a serious obstacle in TCFs applications. SWNTs are the most appropriate materials for conductive films for displays due to their excellent high mechanical strength and electrical conductivity. Recently, it has been demonstrated that acid treatment is an efficient method for surfactant removal. However, the treatment has been reported to destroy most SWNT. In this work, the fabrication by the spraying process of transparent SWNT films and reduction of its sheet resistance by Au-ionic doping treatment on PET substrates is researched. Arc-discharge SWNTs were dispersed in deionized water by adding sodium dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWNT was spray-coated on PET substrate and dried on a hotplate. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then was doped with Au-ionic doping treatment, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. This was confirmed and discussed on the XPS and UPS studies. We show that 87 ${\Omega}/{\Box}$ sheet resistances with 81% transmittance at the wavelength of 550 nm. The changes in electrical and optical conductivity of SWNT film before and after Au-ionic doping treatments were discussed. The effects of hole transport interface layer using Au-ionic doping SWNT on the performance of organic solar cells were investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.151-151
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• 2009

Recently, there has been increasing interest in amorphous oxide semiconductors to find alternative materials for an amorphous silicon or organic semiconductor layer as a channel in thin film transistors(TFTs) for transparent electronic devices owing to their high mobility and low photo-sensitivity. The fabriction of amorphous oxide-based TFTs at room temperature on plastic substrates is a key technology to realize transparent flexible electronics. Amorphous oxides allows for controllable conductivity, which permits it to be used both as a transparent semiconductor or conductor, and so to be used both as active and source/drain layers in TFTs. One of the materials that is being responsible for this revolution in the electronics is indium-zinc-tin oxide(IZTO). Since this is relatively new material, it is important to study the properties of room-temperature deposited IZTO thin films and exploration in a possible integration of the material in flexible TFT devices. In this research, we deposited IZTO thin films on polyethylene naphthalate substrate at room temperature by using magnetron sputtering system and investigated their properties. Furthermore, we revealed the fabrication and characteristics of top-gate-type transparent TFTs with IZTO layers, seen in Fig. 1. The experimental results show that by varying the oxygen flow rate during deposition, it can be prepared the IZTO thin films of two-types; One a conductive film that exhibits a resistivity of $2\times10^{-4}$ ohm${\cdot}$cm; the other, semiconductor film with a resistivity of 9 ohm${\cdot}$cm. The TFT devices with IZTO layers are optically transparent in visible region and operate in enhancement mode. The threshold voltage, field effect mobility, on-off current ratio, and sub-threshold slope of the TFT are -0.5 V, $7.2\;cm^2/Vs$, $\sim10^7$ and 0.2 V/decade, respectively. These results will contribute to applications of select TFT to transparent flexible electronics.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.4
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• pp.23-29
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• 2000

We demonstrate the fabrication method of high-density and high-quality solder bump solving a copper (Cu) cross-contamination in Si-LSI laboratory. The Cu cross-contamination is solved by separating solder-bump process by two steps. Former is via-formation process excluding Cu/Ti under ball metallurgy (UBM) layer sputtering in Si-LSI laboratory. Latter is electroplating process including Ti-adhesion and Cu-seed layers sputtering out of Si-LSI laboratory. Thick photoresist (PR) is achieved by a multiple coating method. After TiW/Al-electrode sputtering for electroplating and via formation in Si-LSI laboratory, Cu/Ti UBM layer is sputtered on sample. The Cu-seed layer on the PR is etched during Cu-electroplating with low-electroplating rate due to a difference in resistance of UBM layer between via bottom and PR. Therefore Cu-buffer layer can be electroplated selectively at the via bottom. After etching the Ti-adhesion layer on the PR, Sn/Pb solder layer with a composition of 60/40 is electroplated using a tin-lead electroplating bath with a metal stoichiometry of 60/40 (weight percent ratio). Scanning electron microscope image shows that the fabricated solder bump is high-uniformity and high-quality as well as symmetric mushroom shape. The solder bumps with even 40/60 $\mu\textrm{m}$ in diameter/pitch do not touch during electroplating and reflow procedures. The solder-bump process of high-uniformity and high-density with the Cu cross-contamination free in Si-LSI laboratory will be effective for electronic microwave application.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.338-338
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• 2013

Monolithic three-dimensional integrated circuits (3D-ICs) 구현 시 bonding 과정에서 발생되는 aluminum (Al) 이나 copper (Cu) 등의 interconnect metal의 확산, 열적 스트레스, 결함의 발생, 도펀트 재분포와 같은 문제들을 피하기 위해서는 저온 공정이 필수적이다. 지금까지는 polymer 기반의 bonding이나 Cu/Cu와 같은 metal 기반의 bonding 등과 같은 저온 bonding 방법이 연구되어 왔다. 그러나 이와 같은 bonding 공정들은 공정 시 void와 같은 문제가 발생하거나 공정을 위한 특수한 장비가 필수적이다. 반면, 두 물질의 합금을 이용해 녹는점을 낮추는 eutectic bonding 공정은 저온에서 공정이 가능할 뿐만 아니라 void의 발생 없이 강한 bonding 강도를 얻을 수 있다. Aluminum-germanium (Al-Ge) 및 aluminum-indium (Al-In) 등의 조합이 eutectic bonding에 이용되어 각각 $424^{\circ}C$ 및 $454^{\circ}C$의 저온 공정을 성취하였으나 여전히 $400^{\circ}C$이상의 eutectic 온도로 인해 3D-ICs의 구현 시에는 적용이 불가능하다. 이러한 metal 조합들에 비해 indium (In)과 tin (Sn)은 각각 $156^{\circ}C$ 및 $232^{\circ}C$로 굉장히 낮은 녹는점을 가지고 있기 때문에 In-Sn 조합은 약 $120^{\circ}C$ 정도의 상당히 낮은eutectic 온도를 갖는다. 따라서 본 연구팀은 In-Sn 조합을 이용하여 $200^{\circ}C$ 이하에서monolithic 3D-IC 구현 시 사용될 eutectic bonding 공정을 개발하였다. 100 nm SiO2가 증착된 Si wafer 위에 50 nm Ti 및 410 nm In을 증착하고, 다른Si wafer 위에 50 nm Ti 및 500 nm Sn을 증착하였다. Ti는 adhesion 향상 및 diffusion barrier 역할을 위해 증착되었다. In과 Sn의 두께는 binary phase diagram을 통해 In-Sn의 eutectic 온도인 $120^{\circ}C$ 지점의 조성 비율인 48 at% Sn과 52 at% In에 해당되는 410 nm (In) 그리고 500 nm (Sn)로 결정되었다. Bonding은 Tbon-100 장비를 이용하여 $140^{\circ}C$, $170^{\circ}C$ 그리고 $200^{\circ}C$에서 2,000 N의 압력으로 진행되었으며 각각의 샘플들은 scanning electron microscope (SEM)을 통해 확인된 후, 접합 강도 테스트를 진행하였다. 추가로 bonding 층의 In 및 Sn 분포를 확인하기 위하여 Si wafer 위에 Ti/In/Sn/Ti를 차례로 증착시킨 뒤 bonding 조건과 같은 온도에서 열처리하고secondary ion mass spectrometry (SIMS) profile 분석을 시행하였다. 결론적으로 본 연구를 통하여 충분히 높은 접합 강도를 갖는 In-Sn eutectic bonding 공정을 $140^{\circ}C$의 낮은 공정온도에서 성공적으로 개발하였다.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2001.11a
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• pp.7-7
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• 2001

The increasing interest in light weight materials coupled to the need for cost -effective processing have combined to create a significant opportunity for aluminum P/M. particularly in the automotive industry in order to reduce fuel emissions and improve fuel economy at affordable prices. Additional potential markets for Al PIM parts include hand tools. Where moving parts against gravity represents a challenge; and office machinery, where reciprocating forces are important. Aluminum PIM adds light weight, high compressibility. low sintering temperatures. easy machinability and good corrosion resistance to all advantages of conventional iron bm;ed P/rv1. Current commercial alloys are pre-mixed of either the AI-Si-Mg or AL-Cu-Mg-Si type and contain 1.5% ethylene bis-stearamide as an internal lubricant. The powder is compacted in closed dies at pressure of 200-500Mpa and sintered in nitrogen at temperatures between $580~630^{\circ}C$ in continuous muffle furnace. For some applications no further processing is required. although most applications require one or more secondary operations such as sizing and finishing. These sccondary operations improve the dimension. properties or appearance of the finished part. Aluminum is often considered difficult to sinter because of the presence of a stable surface oxide film. Removal of the oxide in iron and copper based is usually achieved through the use of reducing atmospheres. such as hydrogen or dissociated ammonia. In aluminum. this occurs in the solid st,lte through the partial reduction of the aluminum by magncsium to form spinel. This exposcs the underlying metal and facilitates sintering. It has recently been shown that < 0.2% Mg is all that is required. It is noteworthy that most aluminum pre-mixes contain at least 0.5% Mg. The sintering of aluminum alloys can be further enhanced by selective microalloying. Just 100ppm pf tin chnnges the liquid phase sintering kinetics of the 2xxx alloys to produce a tensile strength of 375Mpa. an increilse of nearly 20% over the unmodified alloy. The ductility is unnffected. A similar but different effect occurs by the addition of 100 ppm of Pb to 7xxx alloys. The lend changes the wetting characteristics of the sintering liquid which serves to increase the tensile strength to 440 Mpa. a 40% increase over unmodified aIloys. Current research is predominantly aimed at the development of metal matrix composites. which have a high specific modulus. good wear resistance and a tailorable coefficient of thermal expnnsion. By controlling particle clustering and by engineering the ceramic/matrix interface in order to enhance sintering. very attractive properties can be achicved in the ns-sintered state. I\t an ils-sintered density ilpproaching 99%. these new experimental alloys hnve a modulus of 130 Gpa and an ultimate tensile strength of 212 Mpa in the T4 temper. In contest. unreinforcecl aluminum has a modulus of just 70 Gpa.

• Journal of Conservation Science
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• v.36 no.3
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• pp.178-186
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• 2020

Verdigris is a traditional artificial pigment reported on old research papers and according to the methods mentioned in the literature, it is manufactured by the corrosion of copper or copper alloys using vinegar and by further scraping the generated rust. Since the Three Kingdoms Period, various household products with copper alloys, such as bronze and brass, have been used, and pigment analysis of these cultural heritage items has revealed the presence of tin, zinc, lead, and copper in green pigments. Based on these data, five types of verdigris were prepared from copper and copper alloys, and analyzed. the analysis results revealed a bluish green pigmentation, and the chromaticity, particle shape, and oil absorption quantity of each verdigris differed based on the type of copper alloy used in its preparation. The main components of verdigris are Cu, Sn, Zn and Pb, and their proportions depended on the type of copper alloy used during manufacturing. However, the main constituent mineral of the pigments is the same as 'hoganite[Cu(CH₃COO)₂·H₂O]', regardless of the copper alloy used. The result of accelerated weathering test for stability evaluation revealed that verdigris was discolored rapidly, thereby indicating that its stability was low, in particular, the pigments comprising lead presented relatively lower stability.

• Microbiology and Biotechnology Letters
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• v.29 no.4
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• pp.227-233
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• 2001

To maximize astaxanthin (3,3'-dihydroxy-$\beta\beta$'carotene-44'-dione) production by high density Haematococcus pluvialis cultures, various, media were examined Among tested media, \`Hong Kong Medium and Modified Bolds Basal Medium showed the best result for cell growth ( $2.0$\times$10^{ 6}$cells /mL) and for astaxanthin content per cell (9.7 mg astaxanthin mg/g cell), respectively, Maximum astasanthin concentration of 6.1mL was obtained at pH 7.5, $20^{\circ}C$~$25^{\circ}C$ Deficiencies of nitrogen source($NaNO_3$ and proteose-peptone) found to simulate astaxanthin formation Relatively low light inten- sity of $60\mu$E ($\m^2$s) was sutiable for vegetative cell growth while higher light intensity was required for higher astaxanthin accumulation.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.17-25
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• 1999

Tungsten nitride($WN_x$) films were deposited by PECVD method on silicon nitride($WSi_3N_4$) substrate. The characteristics of $WN_x$ film were investigated with changing various processing parameters ; substrate temperature, gas flow rate, rf power, and different nitrogen sources. The nitrogen composition in $WN_x$ film varied from 0 to 45% according to the $NH_3$ and $N_2$ flow rate. The highest deposition rate of 160 nm/min was obtained for the $NH_3$ gas and relatively low deposition rate of $WN_x$ films were formed by $N_2$ gas. $WN_x$ films deposited on $WSi_3N_4$ substrate had higher deposition rate than that of TiN and Si substrates. The purity of $WN_x$ film were analyzed by AES and higher purity $WN_x$ films were deposited using $NH_3$ gas. The XRD analysis indicates a phase transition from polycrystalline tungsten(W) to amorphous tungsten nitride($WN_x$), showing improved etching profile of $WN_x$ films Thick $WN_x$ films were deposited on various substrates such as Tin, NiCr and Al and maximum thickness of $1.6 {\mu}m$ was obtained on the Al adhesion layer.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.2 s.43
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• pp.59-63
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• 2007

This paper presented a low-cost thick film gas sensor module, which was based on simple PCB (Printed Circuit Board) process. The proposed sensor module included a $NO_2/H_2$ gas sensor, a relative humidity sensor, and a heating element. The $NO_2/H_2$ gas and relative humidity sensors were realized by screen-printing $SnO_2,\;BaTiO_3$ nano-powders on IDTS (Interdigital Transducer) of a PCB substrate, respectively. At first 1% $H_2$ gas flowed into the sensor chamber. After 4 min, air filled the chamber while $H_2$ gas flow stopped. This experiment was performed repeatedly. The Identical procedure was used for the $NO_2$ detection. The result for sensing $H_2$ gas showed the increase of voltage from 0.8V to 3.5V due to the conductance increase and its reaction response time by hydrogen flow was 65 sec. $NO_2$ sensing results showed 2.7 V voltage drop due to the conductance decrease and its response time was 3 sec through a voltage monitoring.