• Title/Summary/Keyword: low temperature scanning electron microscopy

검색결과 274건 처리시간 0.028초

고효율 X선 검출기 적용을 위한 PbO 필름 제작 및 특성 연구 (Fabrication and Characterization of Lead Oxide (PbO) Film for High Efficiency X-ray Detector)

  • 조성호;강상식;최치원;권철;남상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.329-329
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    • 2007
  • Photoconductive poly crystalline lead oxide coated on amorphous thin film transistor (TFT) arrays is the best candidate for direct digital x-ray detector for medical imaging. Thicker films with lessening density often show lower x-ray induced charge generation and collection becomes less efficient. In this work, we present a new methodology used for the high density deposition of PbO. We investigate the structural properties of the films using X-ray diffraction and electron microscopy experiments. The film coatings of approximately $200\;{\mu}m$ thickness were deposited on $2"{\times}2"$ conductive-coated glass substrates for measurements of dark current and x-ray sensitivity. The lead oxide (PbO) films of $200\;{\mu}m$ thickness were deposited on glass substrates using a wet coating process in room temperature. The influence of post-deposition annealing on the characteristics of the lead oxide films was investigated in detail. X-ray diffraction and scanning electron microscopy, and atomic force microscopy have been employed to obtain information on the morphology and crystallization of the films. Also we measured dark current, x-ray sensitivity and linearity for investigation of the electrical characteristics of films. It was found that the annealing conditions strongly affect the electrical properties of the films. The x-ray induced output charges of films annealed in oxygen gas increases dramatically with increasing annealing temperatures up to $500^{\circ}C$ but then drops for higher temperature anneals. Consequently, the more we increase the annealing temperatures, the better density and film quality of the lead oxide. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to change the detection properties of the lead oxide film significantly. Post-deposition thermal annealing is also used for densely film. The PbO films that are grown by new methodology exhibit good morphology of high density structure and provide less than $10\;pA/mm^2$ dark currents as they show saturation in gain (at approximate fields of $4\;V/{\mu}m$). The ability to operate at low voltage gives adequate dark currents for most applications and allows voltage electronics designs.

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MO-COMPOUNDS AS A DIFFUSION BARRIER BETWEEN Cu AND Si

  • Kim, Ji-Hyung;Lee, Yong-Hyuk;Kwon, Yong-Sung;Yeom, Geun-Young;Song, Jong-Han
    • 한국표면공학회지
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    • 제29권6호
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    • pp.683-690
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    • 1996
  • In this study, the diffusion barrier properties of $1000 \AA$ thick molybdenum compounds (Mo, Mo-N, $MoSi_2$, Mo-Si-N) were investigated using sheet resistance measurements, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM), and Rutherford backscattering spectrometry (RBS). Each barrier material was deposited by the dc magnetron sputtering, and annealed at 300-$800^{\circ}C$ for 30min in vacuum. Mo and $MoSi_2$ barrier were failed at low temperature due to Cu diffusion through grain bound-aries and defects of Mo thin film and the reaction of Cu with Si within $MoSi_2$ respectively. A failure temperature could be raised to $650^{\circ}C$-30min in the Mo barrier system and to $700^{\circ}C$-30min in the Mo-silicide system by replacing Mo and $MoSi_2$ with Mo-N and Mo-Si-N, respectively. The crystallization temperature in the Mo-silicide film was raised by the addition of $N_2$. It is considered that not only the N, stuffing effect but also the variation of crystallization temperature affects the reaction of Cu with Si within Mo-silicide. It was found that Mo-Si-N is more effective barrier than Mo, $MoSi_2$, or Mo-N to copper penetration preventing Cu reaction with the substrate for 30min at a temperature higher than $650^{\circ}C$.

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산화아연 나노핵의 조작을 통한 산화아연 나노로드의 제어 (Artificial Control of ZnO Nanorods via Manipulation of ZnO Nanoparticle Seeds)

  • 신경식;이삼동;김상우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.399-399
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    • 2008
  • Synthesis and characterization of ZnO structure such as nanowires, nanorods, nanotube, nanowall, etc. have been studied to multifunctional application such as optical, nanoscale electronic and chemical devices because it has a room-temperature wide band gap of 3.37eV, large exiton binding energy(60meV) and various properties. Various synthesis methods including chemical vapor deposition (CVD), physical vapor deposition, electrochemical deposition, micro-emulsion, and hydrothermal approach have been reported to fabricate various kinds of ZnO nanostructures. But some of these synthesis methods are expensive and difficult of mass production. Wet chemical method has several advantage such as simple process, mass production, low temperature process, and low cost. In the present work, ZnO nanorods are deposited on ITO/glass substrate by simple wet chemical method. The process is perfomed by two steps. One-step is deposition of ZnO seeds and two-step is growth of ZnO nanorods on substrates. In order to form ZnO seeds on substrates, mixture solution of Zn acetate and Methanol was prepared.(one-step) Seed layers were deposited for control of morpholgy of ZnO seed layers by spin coating process because ZnO seeds is deposited uniformly by centrifugal force of spin coating. The seed-deposited samples were pre-annealed for 30min at $180^{\circ}C$ to enhance adhesion and crystallinnity of ZnO seed layer on substrate. Vertically well-aligned ZnO nanorods were grown by the "dipping-and-holding" process of the substrates into the mixture solution consisting of the mixture solution of DI water, Zinc nitrate and hexamethylenetetramine for 4 hours at $90^{\circ}C$.(two-step) It was found that density and morphology of ZnO nanorods were controlled by manipulation of ZnO seeds through rpm of spin coating. The morphology, crystallinity, optical properties of the grown ZnO nanostructures were carried out by field-emission scanning electron microscopy, high-resolution electron microscopy, photoluminescence, respectively. We are convinced that this method is complementing problems of main techniques of existing reports.

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Polyurethane과 polyurethane dimethacrylate를 이용한 내충격성 PMMA수지의 합성과 그 물성 (Synthesis and Property of Modified PMMA Resin Using Polyurethane and Polyurethane Dimethacrylate)

  • 김동현;김주영;서경도
    • 공업화학
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    • 제4권3호
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    • pp.616-626
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    • 1993
  • 유연성과 강인성이 우수하여 탄성체로 널리 사용되어지고 있는 폴리우레탄(PU)을 이용하여 폴리메틸메타크릴레이트(PMMA)의 물성향상을 검토하여 보았다. PU와 PMMA블렌드의 분자량과 폴리올의 종류가 블렌드의 물성과 상용성에 미치는 영향을 관찰하기 위하여, 분자량 또는 폴리올의 종류가 각기 다른 ether type과 ester type의 PU를 합성하여서, 이를 PMMA와 블렌드 하였다. 블렌드의 인장강도는 Instron을 이용하여서 측정하였고, Scanning Electron Microscopy(SEM)와 Differental Scanning Calorimetry(DSC)를 이용하여서 두 고분자의 상용성의 변화에 따른 형태학과 유리전이온도 변화를 측정하였으며, haze meter를 이용하여 투명성을 측정하였다. 그러나, PU와 PMMA 두 고분자의 본질적인 비상용성으로 인하여 블렌드를 통한 PMMA의 물성 개량은 큰 성과를 얻지 못하였다. 따라서 PU와 유사한 화학구조를 가지고 있으면서, 양말단에 비닐기가 도입된 형태인 폴리우레탄 디메타아크릴레이트(PUD)를 합성하여서 메틸메타크릴레이트와 공중합하여 가교 공중합체를 합성하였으며, 이 가교 공중합체의 기계적 물성을 Instron, Izod type(Cantilever Beam)impact tester와 haze meter 등을 이용하여 측정하였다. 그 결과 PMMA 단독수지의 투명성을 유지하면서 내충격성이 상당히 개선된다는 것을 확인할 수 있었다.

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초음파 볼밀링 공정에 의한 용매 점도 특성에 따른 텅스텐계 합금 분쇄 거동 (Investigation on Size Distribution of Tungsten-based Alloy Particles with Solvent Viscosity During Ultrasonic Ball Milling Process)

  • 류근혁;소형섭;윤지석;김인호;이근재
    • 한국분말재료학회지
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    • 제26권3호
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    • pp.201-207
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    • 2019
  • Tungsten heavy alloys (W-Ni-Fe) play an important role in various industries because of their excellent mechanical properties, such as the excellent hardness of tungsten, low thermal expansion, corrosion resistance of nickel, and ductility of iron. In tungsten heavy alloys, tungsten nanoparticles allow the relatively low-temperature molding of high-melting-point tungsten and can improve densification. In this study, to improve the densification of tungsten heavy alloy, nanoparticles are manufactured by ultrasonic milling of metal oxide. The physical properties of the metal oxide and the solvent viscosity are selected as the main parameters. When the density is low and the Mohs hardness is high, the particle size distribution is relatively high. When the density is high and the Mohs hardness is low, the particle size distribution is relatively low. Additionally, the average particle size tends to decrease with increasing viscosity. Metal oxides prepared by ultrasonic milling in high-viscosity solvent show an average particle size of less than 300 nm based on the dynamic light scattering and scanning electron microscopy analysis. The effects of the physical properties of the metal oxide and the solvent viscosity on the pulverization are analyzed experimentally.

Studies in Iron Manufacture Technology through Analysis of Iron Artifact in Han River Basin during the Proto-Three Kingdoms

  • Kim, Soo-Ki
    • Conservation and Restoration of Cultural Heritage
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    • 제1권1호
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    • pp.9-22
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    • 2012
  • The most widely excavated iron artifacts used as weapons or farm tools from central southern regions of Korea were subjects of non-metallic inclusion analysis through metallographic examination, microhardness measurement, and scanning electron microscopy with energy dispersive X-ray spectroscopy. Through metallographic interpretation and study of the analyzed results, the steel manufacturing and iron smelting using heat processing in the iron artifacts excavated from the central southern region of the ancient Korean peninsula was studied, and the analysis of the non-metallic inclusions mixed within the metallic structures was interpreted as the ternary phase diagram of the oxide to infer the type of iron ores for the iron products and the temperature of the furnace used to smelt them. Most of the ancient forged iron artifacts showed $Al_2O_3/SiO_2$ with high $SiO_2$ contents and relatively low $Al_2O_3$ contents for iron ore, indicating t hat for $Al_2O_3$ below 5%, it is presumed that magnetic iron ores were reduced to bloom iron (sponge iron) with direct-reduction process for production. The temperature for extraction of wustite for $Al_2O_3$ below 1% was found to be $1,020{\sim}1,050^{\circ}C$. Considering the oxide ternary constitutional diagram of glassy inclusions, the steel-manufacturing temperature was presumed to have been near $1,150{\sim}1,280^{\circ}C$ in most cases, and minimum melting temperature of casting iron part excavated in Daeseong-ri. Gyeonggi was near $1,400^{\circ}C$, and it is thought that hypoeutectic cast iron of about 2.3% carbon was casted and fragility of cast iron was improved by decarburizing in solid state.

MgO-Al2O3-SiO2-ZrO2계 글라스 세라믹의 제조 및 특성 평가 (Fabrication and Characterization of MgO-Al2O3-SiO2-ZrO2 Based Glass Ceramic)

  • 윤제정;전명표;신효순;남산
    • 한국전기전자재료학회논문지
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    • 제27권11호
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    • pp.712-717
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    • 2014
  • Glass ceramic has a high mechanical strength and low sintering temperature. So, it can be used as a thick film substrate or a high strength insulator. A series of glass ceramic samples based on MgO-$Al_2O_3-SiO_2-ZrO_2$ (MASZ) were prepared by melting at $1,600^{\circ}C$, roll-quenching and heat treatment at various temperatures from $900^{\circ}C$ to $1,400^{\circ}C$. Dependent on the heat treatment temperature used, glass ceramics with different crystal phases were obtained. Their nucleation behavior, microstructure and mechanical properties were investigated with differential thermal analysis (DTA), X-ray diffraction (XRD), scanning electron microscopy (SEM), and Vicker's hardness testing machine. With increasing the heat treatment temperature of MASZ samples, their hardness and toughness initially increase and then reach the maximum points at $1,300^{\circ}C$, and begin to decrease at above this temperature, which is likely to be due to the softening of glass ceramics. As the content of $ZrO_2$ in MAS glass ceramics increases from 7.0 wt.% to 13 wt.%, Vicker's hardness and fracture toughness increase from $853Kg/mm^2$ to $878Kg/mm^2$ and $1.6MPa{\cdot}m^{1/2}$ to $2.4MPa{\cdot}m^{1/2}$ respectively, which seems to be related with the nucleation of elongated phases like fiber.

C-축으로 정렬된 sol-gel ZnO 박막의 특성 (Characteristics of c-axis oriented sol-gel derived ZnO films)

  • 김상수;장기완;김인성;송호준;박일우;이건환;권식철
    • 한국결정성장학회지
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    • 제11권2호
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    • pp.49-55
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    • 2001
  • sol-gel방법에 의해서 p-형 Si(100)웨이퍼와 ITO glass, quartz glass기판 위 ZnO박막을 형성시켰으며 출발 물질은 zinc acetate dihydrate를 사용하였다. Zinc acetate dihydrate를 2-methoxyethanol-monoethanolamine(MEA)용액에 녹여 :균질하고 안정된 용액을 만들었다. ZnO박막은 2800rpm에서 25초 동안 spin-coating하고 $250^{\circ}C$의 hot plate에서 10분 동안 중간 열처리한 후 이를 반복하여 형성시켰고 결정화를 위한 열처리는 $400^{\circ}C$~$800^{\circ}C$공기 분위기에서 1시간 동안 시행하였다. X-ray diffraction(XRD), scanning electron microscopy(SEM), UV-vis 투과 스펙트럼, IR 투과 스펙트럼, photoluminescence(PL)스펙트럼 등의 측정 결과로부터 박막의 구조적 특성과 광학적 성질에 대해서 논의하였다. 제조된 ZnO막은 (002)면으로 정렬되어 있으며 380nm파장에서 예리한 흡수단이 있고 가시광선 영역에서 투명(투과율 70% 이상)하였는데 이 흡수단은 ZnO의 밴드 갭(3.2eV)과 잘 일치한다. 저온에서의 띠끝 PL스펙트럼은 속박된 엑시톤 복합체와 포논 복제에 의한 다중선 구조를 보인다.

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PECVD법에 의해 증착된 SiO2 후막의 광학적 성질 및 구조적 분석 (Optical Properties and Structural Analysis of SiO2 Thick Films Deposited by Plasma Enhanced Chemical Vapor Deposition)

  • 조성민;김용탁;서용곤;윤형도;임영민;윤대호
    • 한국세라믹학회지
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    • 제39권5호
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    • pp.479-483
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    • 2002
  • 저온($320^{\circ}$C)에서 $SiH_4$$N_2O$ 가스의 혼합을 통해 플라즈마화학기상증착(PECVD)법을 이용하여 실리카 광도파로의 클래딩막으로 사용되는 $SiO_2$ 후막을 제조하였으며, 공정변수로는 $N_2O/SiH_4$ 유량비와 RF power에 변화를 주었다. 증착된 시편은 $N_2$ 분위기의 열처리로에서 $1050{\circ}$에서 2시간동안 열처리하였다. $N_2O/SiH_4$ 유량비가 증가함에 따라 증착속도는 $9.4~2.9{\mu}m /h$까지 감소하였으며, RF power가 증가함에 따라 증착속도는 $4.7~6.9{\mu}m /h$까지 증가하였다. 두께 및 굴절률은 Prism Coupler를 이용하여 분석하였다. 화학적 성질 및 구조적 성질은 X-ray Photoelectron Spectroscopy(XPS)와 Fourier Transform-Infrared Spectroscopy(FT-IR)를 이용하여 분석하였으며, Scanning Electron Microscopy(SEM)를 이용하여 시편의 단면을 관찰하였다.

고효율 태양전지의 저가화를 위한 Ni/Cu/Ag 전극의 Ni Silicide 형성에 관한 연구 (Investigation of Ni Silicide formation at Ni/Cu/Ag Contact for Low Cost of High Efficiency Solar Cell)

  • 김종민;조경연;이지훈;이수홍
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2009년도 춘계학술발표대회 논문집
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    • pp.230-234
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    • 2009
  • It is significant technique to increase competitiveness that solar cells have a high energy conversion efficiency and cost effectiveness. When making high efficiency crystalline Si solar cells, evaporated Ti/Pd/Ag contact system is widely used in order to reduce the electrical resistance of the contact fingers. However, the evaporation process is no applicable to mass production because high vacuum is needed. Furthermore, those metals are too expensive to be applied for terrestrial applications. Ni/Cu/Ag contact system of silicon solar cells offers a relatively inexpensive method of making electrical contact. Ni silicide formation is one of the indispensable techniques for Ni/Cu/Ag contact sytem. Ni was electroless plated on the front grid pattern, After Ni electroless plating, the cells were annealed by RTP(Rapid Thermal Process). Ni silicide(NiSi) has certain advantages over Ti silicide($TiSi_2$), lower temperature anneal, one step anneal, low resistivity, low silicon consumption, low film stress, absence of reaction between the annealing ambient. Ni/Cu/Ag metallization scheme is an important process in the direction of cost reduction for solar cells of high efficiency. In this article we shall report an investigation of rapid thermal silicidation of nickel on silngle crystalline silicon wafers in the annealing range of $350-390^{\circ}C$. The samples annealed at temperatures from 350 to $390^{\circ}C$ have been analyzed by SEM(Scanning Electron Microscopy).

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