• 제목/요약/키워드: low temperature scanning electron microscopy

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Effects of A-Site and B-Site Vacancies on Structural and Dielectric Properties of PLZT Ceramics

  • Jeong, Cheol-Su;Park, Hyu-Bum;Hong, Young-Sik;Kim, Si-Joong
    • The Korean Journal of Ceramics
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    • v.2 no.2
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    • pp.76-82
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    • 1996
  • PLZT ceramics having two nominal compositions, $Pb_{1-3x/2}La_xV_{x/2}(Zr_{03}Ti_{03})O_3$ and $Pb_{1-x}La_x(Zr_{0.2}Ti_{0.5})_{1-x/4}V_{x/4}O_3$ (V: vacancy) with x=0.00~0.30, were prepared. The physical, structural, and dielectric properties were investigated by X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and measurements of bulk density and dielectric constant. The two series with A-stie and B-site vacancies showed different physical, structural, dielectric properties, and, specially, Curie temperature. In comparison to PLZT with B-site vacancies, PLZT with A-site vacancies showed high Curie temperatures and low maxima of dielectric constant. Consequently, it is evident that the properties of PLZT ceramics depend on the vacancy formula adopted as a batch composition in preparation.

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Properties of ZnO:Al films on polymer substrates by low temperature process

  • Jung, Yu-Sup;Kim, Kyung-Hwan
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.3
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    • pp.57-60
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    • 2009
  • Transparent electrode ZnO:Al(AZO)films were deposited on a PES (polyethersulfone) polymer substrate for thin film solar cells applications. A PES substrate with a thickness of 0.2mm and transmittance > 90% in the visible range was used because it is light weight and can deform easily. AZO thin films were prepared at a fixed DC power, $PO_2\;=\;P(O_2)/[P(O_2)\;+\;P(Ar)]$, and various substrate temperatures. The properties of AZO thin films were examined by X-ray diffraction, UV/VIS spectroscopy, four-point probe, Hall measurements, and field emission scanning electron microscopy. The lowest resistivity of all the films was $4.493\;{\times}\;10^{-4}\;[\Omega-cm]$ and the transmittance was > 80% in the visible range.

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Crack-Free Fabrications of Yttria-Stabilized Zirconia Films Using Successive-Ionic-Layer-Adsorption-and-Reaction and Air-Spray Plus Method

  • Taeyoon Kim;Sangmoon Park
    • Korean Journal of Materials Research
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    • v.34 no.2
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    • pp.79-84
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    • 2024
  • Thin films of yttria-stabilized zirconia (YSZ) nanoparticles were prepared using a low-temperature deposition and crystallization process involving successive ionic layer adsorption and reaction (SILAR) or SILAR-Air spray Plus (SILAR-A+) methods, coupled with hydrothermal (175 ℃) and furnace (500 ℃) post-annealing. The annealed YSZ films resulted in crystalline products, and their phases of monoclinic, tetragonal, and cubic were categorized through X-ray diffraction analysis. The morphologies of the as-prepared films, fabricated by SILAR and SILAR-A+ processes, including hydrothermal dehydration and annealing, were characterized by the degree of surface cracking using scanning electron microscopy images. Additionally, the thicknesses of the YSZ thin films were compared by removing diffusion layers such as spectator anions and water accumulated during the air spray plus process. Crack-free YSZ thin films were successfully fabricated on glass substrates using the SILAR-A+ method, followed by hydrothermal and furnace annealing, making them suitable for application in solid oxide fuel cells.

THE MORPHOLOGY OF CHROMIUM AND LIF MEASUREMENT OF ATOMIC ARSENIC IN LAMINAR DIFFUSION FLAMES

  • Yoon, Young-Bin
    • 한국연소학회:학술대회논문집
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    • 1997.06a
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    • pp.61-68
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    • 1997
  • The morphology and size distribution of chromium oxides and the concentration measurement of atomic arsenic have been studied in laminar diffusion flames. Nitrogen was added to vary flame temperatures in hydrogen flames. Ethene flames were used in order to investigate the potential for interaction between the soot aerosol that is formed in these flames and the chromium aerosol. Two sources of chromium compounds were introduced: chromium nitrate and chromium hexacarbonyl. A detailed investigation of the morphology was carried out by scanning electron microscopy (SEM). The amounts of Cr(VI) and total Cr were determined by a spectrophotometric method and by X-ray fluorescence spectrometry, respectively. Also, LIF was used for the measurement of atomic arsenic, which was excited at 197.2 nm and was detected at 249.6 nm. Results showed that the morphology of the particles varied with the flame temperature and with the chromium source. The particles were characterized by porous structures, cenospheres and agglomerated dense particles when chromium nitrate solution was added to the flames. At low to moderate temperatures, porous sintered cenospheric structures were formed, in some cases with a blow hole. At higher temperatures, an agglomerated cluster which was composed of loosely sintered submicron particles was observed. It was also found that the emission of Cr(VI) from the undiluted $H_2$ flame was more than 10 times larger than in the 50% $H_2$ / 50% $N_2$ flame on a mass basis. Single point LIF measurement of atomic arsenic indicated that arsenic exist only in the low temperature, fuel rich region.

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Fabrication of YSZ/GDC Bilayer Electrolyte Thin Film for Solid Oxide Fuel Cells

  • Yang, Seon-Ho;Choi, Hyung-Wook
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.4
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    • pp.189-192
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    • 2014
  • Yttria-stablized zirconia (YSZ) is the most commonly used electrolyte material, but the reduction in working temperature leads to insufficient ionic conductivity. Ceria based electrolytes (GDC) are more attractive in terms of conductivity at low temperature, but these materials are well known to be reducible at very low oxygen partial pressure. The reduction of electrolyte resistivity is necessary to overcome cell performance losses. So, thin YSZ/GDC bilayer technology seems suitable for decreasing the electrolyte resistance at lower operating temperatures. Bilayer electrolytes composed of a galdolinium-doped $CeO_2$ ($Ce_{0.9}Gd_{0.1}O_{1.95}$, GDC) layer and yttria-stabilized $ZrO_2$ (YSZ) layer with various thicknesses were deposited by RF sputtering and E-beam evaporation. The bilayer electrolytes were deposited between porous Ni-GDC anode and LSM cathode for anode-supported single cells. Thin film structure and surface morphology were investigated by X-ray diffraction (XRD), using $CuK{\alpha}$-radiation in the range of 2ce morphol$^{\circ}C$. The XRD patterns exhibit a well-formed cubic fluorite structure, and sharp lines of XRD peaks can be observed, which indicate a single solid solution. The morphology and size of the prepared particles were investigated by field-emission scanning electron microscopy (FE-SEM). The performance of the cells was evaluated over $500{\sim}800^{\circ}C$, using humidified hydrogen as fuel, and air as oxidant.

Characteristics of flexible indium tin oxide electrode grown by continuous roll-to-roll sputtering process for flexible displays

  • Choi, Kwang-Hyuk;Cho, Sung-Woo;Jeong, Jin-A;Kim, Han-Ki
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.605-608
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    • 2008
  • The preparation and characteristics of flexible indium tin oxide electrodes grown on polyethylene terephthalate (PET) substrates using a specially designed roll-to-roll sputtering system for use in flexible optoelectronics In spite of low a PET substrate temperature, we can obtain the flexible electrode with a sheet resistance of 47.4 ohm/square and an average optical transmittance of 83.46 % in the green region of 500~550 nm wavelength. Both x-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) analysis results showed that all flexible ITO electrodes grown on the PET substrate were an amorphous structure with a very smooth and featureless surface, regardless of the Ar/$O_2$ flow ratio due to the low substrate temperature, which is maintained by a cooling drum. In addition, the flexible ITO electrode grown on the Ar ion beam treated PET substrates showed more stable mechanical properties than the flexible ITO electrode grown on the wet cleaned PET substrate, due to an increased adhesion between the flexible ITO and the PET substrates.

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Low temperature wet-chemical synthesis of spherical hydroxyapatite nanoparticles and their in situ cytotoxicity study

  • Mondal, Sudip;Dey, Apurba;Pal, Umapada
    • Advances in nano research
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    • v.4 no.4
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    • pp.295-307
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    • 2016
  • The present research work reports a low temperature ($40^{\circ}C$) chemical precipitation technique for synthesizing hydroxyapatite (HAp) nanoparticles of spherical morphology through a simple reaction of calcium nitrate tetrahydrate and di-ammonium hydrogen phosphate at pH 11. The crystallinity of the single-phase nanoparticles could be improved by calcinating at $600^{\circ}C$ in air. Thermogravimetric and differential thermal analysis (TG-DTA) revealed the synthesized HAp is stable up to $1200^{\circ}C$. Scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) studies confirmed the formation of spherical nanoparticles with average size of $23.15{\pm}2.56nm$ and Ca/P ratio of 1.70. Brunauer-Emmett-Teller (BET) isotherm of the nanoparticles revealed their porous structure with average pore size of about 24.47 nm and average surface area of $78.4m2g^{-1}$. Fourier transform infrared spectroscopy (FTIR) was used to confirm the formation of P-O, OH, C-O chemical bonds. Cytotoxicity and MTT assay on MG63 osteogenic cell lines revealed nontoxic bioactive nature of the synthesized HAp nanoparticles.

Characteristics of Thick GaN on Si using AlN and LT-GaN Buffer Layer (AlN과 저온 GaN 완충층을 이용한 Si 기판상의 후막 GaN 성장에 관한 연구)

  • Baek, Ho-Seon;Lee, Jeong-Uk;Kim, Ha-Jin;Yu, Ji-Beom
    • Korean Journal of Materials Research
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    • v.9 no.6
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    • pp.599-603
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    • 1999
  • We have investigated the growth characteristics of thick GaN on Sim substrate with AlN and low temperature GaN buffer layer. The vertical hydride vapor phase epitaxy system with $GaCl_3$ precursor was used for growth of GaN. AlN and GaN buffer layer were deposited on Si substrate to reduce the lattice mismatch and the thermal expansion coefficient mismatch between si and GaN. Optimization of deposition condition for AlN and low temperature GaN buffer layers were carried out. We studied the effects of growth temperature, V/III ratio on the properties of thick GaN. Surface morphology, growth rate and crystallinity of thick GaN were measured using Atomic Force Microscopy (AFM), $\alpha-step$-, Scanning Electron Microscopy (SEM) and X-Ray Diffractometer(XRD).

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Surface Modification with Atmospheric Microwave Agron Plasma Jet Assisted with Admixture of H2O2 and Analysis of Plasma Characteristics

  • Won, I.H.;Shin, H.K.;Kwon, H.C.;Kim, H.Y.;Kang, S.K.;Lee, J.K.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.544-545
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    • 2013
  • Recently, low-temperature atmospheric-pressure plasmas have been investigated [1,2] for biomedical applications and surface treatments. Experiments for improving hydrophilicity of stainless steel (SUS 304) plate with atmospheric microwave argon and H2O2 mixture plasma jet [3] were carried out and experimental measurements and plasma simulations were conducted for investigating the characteristics of plasma for the process. After 30 s of low power (under 10 W) and low temperature (under $50^{\circ}C$) plasma treatment, the water contact angle decreased rapidly to around $10^{\circ}$ from $75^{\circ}$ and was maintained under $30^{\circ}$ for a day (24 hours). The surface free energy, calculated from the contact angles, increased. The chemical properties of the surface were examined by X-ray Photoelectron Spectroscopy (XPS) and the surface morphology and roughness were examined by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) respectively. The characteristics of plasma sources with several frequencies were investigated by Optical Emission Spectroscopy (OES) measurement and one-dimensional Particle-in-Cell (PIC) simulation and zero-dimensional global simulation [4]. The relation between plasma components and the efficacy of the surface modification were discussed.

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Low temperature synthesis of ZnO nanopowders by the polymerized complex method (착체중합법을 이용한 ZnO 나노분말의 저온합성)

  • 권용재;김경훈;임창성;심광보
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.12 no.5
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    • pp.229-233
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    • 2002
  • Nano-sized ZnO particles were successfully synthesized at low temperatures by a polymerized complex method via an organochemical route. The polymeric precursors could be prepared using Zn nitrate hexahydrate and a mixed solution of citric acid and ethylene glycol as a chelating agent and a reaction medium. The polymeric precursors were calcined at temperatures from 300 to $700^{\circ}C$ for 3 h, and evaluated for degree of crystallization process, thermal decomposition, surface morphology and crystallite size. The thermal decomposition and crystallization process were analyzed by TG-DTA, FI-IR and XRD. The morphology and crystallite size of the calcined particles were evaluated by scanning electron microscopy (SEM), transmittance electron microscopy (TEM) and Scherrer's equation. Crystallization of the ZnO particles was detected at $300^{\circ}C$ and entirely completed above $400^{\circ}C$. Particles calcined between 400 and $700^{\circ}C$ showed a uniform size distribution with a round shape. The average particle sizes calcined at $400^{\circ}C$ for 3 hour were 30~40nm showing an ordinary tendency to increase with the temperatures.