• Electronic Materials Letters
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• 제14권6호
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• pp.657-668
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• 2018

Organic-inorganic hybrid lead halide perovskites have been extensively investigated for various optoelectronic applications. Particularly, owing to their ability to form highly crystalline and homogeneous films utilizing low-temperature solution processes (< $150^{\circ}C$), perovskites have become promising photoactive materials for realizing high-performance flexible solar cells. However, the current use of mesoporous $TiO_2$ scaff olds, which require high-temperature sintering processes (> $400^{\circ}C$), has limited the fabrication of perovskite solar cells on flexible substrates. Therefore, the development of a low-temperature processable charge-transporting layer has emerged as an urgent task for achieving flexible perovskite solar cells. This review summarizes the recent progress in low-temperature processable electron- and hole-transporting layer materials, which contribute to improved device performance in flexible perovskite solar cells.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2004년도 제29회 KOSCI SYMPOSIUM 논문집
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• pp.225-230
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• 2004

Volatile organic compounds (VOCs) are low calorific value gases (LCVG) emitted from chemical processes such as painting booth, dye works and drying processes etc. Characteristics of VOCs are low calorific values less than 150 kcal/$m^3$, high activation energy for ignition and low energy output. These characteristics usually make combustion unstable and its treatment processes needs high-energy consumption, The cyclone combustion system is suitable for LCVG burning because it can recirculate energy through a high swirling flow to supply the activation energy for ignition, increases energy density to make a combustion temperature higher than usual swirl combustor and also increases mixing intensity, This research was conducted to develop optimized cyclone combustion system for thermal oxidation of VOCs. This research was executed to establish the effect of swirl number with respect to the combustion temperature and composition of exhausted gas in the specific combustor design.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.54-58
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• 1994

H$_2$ bake and GeH$_4$ clean are used as a in-situ pre-clean method in low temperature Si based epitaxial growth technology using rapid thermal processing chemical vapor deposition (RTPCVD). In this paper, the H$_2$ bake and GeH$_4$ clean processes are optimized for low surface defect density using Taguchi method. In H$_2$ bake process, the epitaxial growth temperature affects dominantly on the surface defect density, and the next affecting factors are H$_2$ bake temperature and rinse time in de-ionised water. In GeH$_4$ clean process, GeH$_4$ clean temperature affects most strongly on the surface defect density, and the minor factor is GeH$_4$flow rate. The optimum process conditions predicted fly Taguchi method agree well with tile experimental data in both in-situ clean processes.

• 한국결정성장학회지
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• 제30권2호
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• pp.61-65
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• 2020

The depletion of fossil fuels and the increase in environmental awareness have led to greater interest in renewable energy. In particular, solar cells have attracted attention because they can convert an infinite amount of solar energy into electricity. Dye-sensitize solar cells (DSSCs) are low cost third generation solar cells that can be manufactured using environmentally friendly materials. However, DSSC photoelectrodes are generally produced by screen printing, which requires high temperature heat treatment, and low temperature processes that can be used to produce flexible DSSCs are limited. To overcome these temperature limitations, this study fabricated photoelectrodes using room-temperature aerosol deposition. The resulting DSSCs had an energy conversion efficiency of 4.07 %. This shows that it is possible to produce DSSCs and flexible devices using room-temperature processes.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.1783-1788
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• 2004

In the present paper, a micro flow sensor, which can be used at bio-delivery systems and micro heat pumps, is developed. For this, the micro flow sensor is integrated on a quartz wafer ($SiO_2$) and is manufactured by simple and convenient microfabrication processes. The micro flow sensor aims for measuring mass flow rates in the low range of about $0{\sim}20$ SCCM. The micro flow sensor is composed of temperature sensors, a heater, and a flow microchannel. The temperature sensors and the heater are manufactured by the sputtering processes in this study. In the microfabrication processes, stainless steel masks with different patterns are used to deposit alumel and chromel for temperature sensors and nichrome for the heater on the quartz wafer. The microchannel is made of Polydimethylsiloxane(PDMS) easily. A deposited quartz wafer is bonded to the PDMS microchannel by using the air plasma. Finally, we confirmed the good operation of the present micro flow sensor by measuring flow rate.

• 소성∙가공
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• 제16권5호통권95호
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• pp.396-400
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• 2007

LTCC(Low Temperature Co-fired Ceramic) which offers a good performance to produce multilayer structures with electronic circuits and components has emerged as an attractive technology in the electronic packaging industry. In LTCC module fabrication process, the lamination and the sintering are very important processes and affect the electrical characteristics of the final products because the processes change the permittivity of ceramics and the dimension of the circuit patterns which have influences on electronic properties. This paper discusses the influence of lamination pressure and sintering temperature on the permittivity and the dimensional change of LTCC products. In the present investigation, it is shown that the permittivity increases along with increasing of the lamination pressure and the sintering temperature.

• 한국전기전자재료학회논문지
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• 제37권1호
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• pp.43-47
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• 2024

The size of semiconductor devices has been scaled down to improve packing density and output performance. However, there is uncontrollable spreading of the dopants that comprise the well, punch-stop, and channel-stop when using high-temperature annealing processes, such as rapid thermal annealing (RTA). In this context, low-temperature deuterium annealing (LTDA) performed at a low temperature of 300℃ is proposed to reduce the thermal budget during CMOS fabrication. The LTDA effectively eliminates the interface trap in the gate dielectric layer, thereby improving the electrical characteristics of devices, such as threshold voltage (V_TH), subthreshold swing (SS), on-state current (I_ON), and off-state current (I_OFF). Moreover, the LTDA is perfectly compatible with CMOS processes.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 1994년도 특별강연 및 추계학술발표 개요집
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• pp.111-114
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• 1994

This paper describes a method to measure a weldment surface temperature for estimating variations of the weld pool size in the gas metal arc(GMA) welding processes. An Infrared sensing system is designed to measure the radiation emitted from the top surface of the weldment, The interference effect of the electric arc to the measurement is rejected by detecting the low peaks of the noisy signal. An optimizing criterion, in which the correlation between the weld quality and the measured temperature is maximized, is also proposed to determine the optimal measurement location.

• 한국표면공학회지
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• 제42권3호
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• pp.116-121
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• 2009

The 2-step low temperature plasma processes (the combined carburizing and post-nitriding) offer the increase of both surface hardness and thickness of hardened layer and corrosion resistance than the individually processed low temperature nitriding and low temperature carburizing techniques. The 2-step low temperature plasma processes were carried out for improving both the surface hardness and corrosion resistance of AISI 316L stainless steel. The influence of gas compositions on the surface properties during nitriding step were investigated. The expanded austenite (${\gamma}_N$) was formed on all of the treated surface. The thickness of ${\gamma}_N$ and concentration of N on the surface increased with increasing both nitrogen gas and Ar gas levels in the atmosphere. The thickness of ${\gamma}_N$ increased up to about $20{\mu}m$ and the thickness of entire hardened layer was determined to be about $40{\mu}m$. The surface hardness was independent of nitrogen and Ar gas contents and reached up to about 1200 $HV_{0.1}$ which is about 5 times higher than that of untreated sample (250 $HV_{0.1}$). The corrosion resistance in 2-step low temperature plasma processed austenitic stainless steels was also much enhanced than that in the untreated austenitic stainless steels due to a high concentration of N on the surface.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권4호
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• pp.295-301
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• 2002

In this paper, solenoid-type 3-D passives (inductors and transformers) have been designed, fabricated, and characterized by using electroplating techniques, wire bonding techniques, multi-layer thick photoresist, and low temperature processes which are compatible with semiconductor circuitry fabrication. Two different fabrication approaches are performed to develop the solenoid-type 3-D passives and relationship of performance characteristics and geometry is also deeply investigated such as windings, cross-sectional area of core, spacing between windings, and turn ratio. Fully integrated inductor has a quality factor of 31 at 6 GHz, an inductance of 2.7 nH, and a self resonant frequency of 15.8 GHz. Bonded wire inductor has a quality factor of 120, an inductance of 20 nH, and a self resonant frequency of 8 GHz. Integrated transformers with turn ratios of 1:1 and n:l have the minimum insertion loss of about 0.6 dB and the wide bandwidth of a few GHz.