• Title/Summary/Keyword: low temperature composition

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Electrochemical Synthesis of Compound Semiconductor Photovoltaic Materials

  • Yu, Bong-Yeong;Jeon, Byeong-Jun;Lee, Dong-Gyu
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.11.1-11.1
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    • 2010
  • As one of the non-vacuum, low temperature fabrication route, electrochemical synthesis has been focused for pursuing the cost-effective pathway to produce high efficiency photovoltaic devices. Especially the availability to form the thin film structure on flexible substrate would be the great advantage of electrochemical process. The successful synthesis of the most favorable absorber materials such as CdTe and CIGS has been reported by many researchers, however, the efficiency of electrochemically synthesized could not exceed that from vacuum process, because of microstructural controllability and compositional variation on devices. In this study, we represent the effect of process parameters on the microstructure and composition of compound semiconductor during the synthesis, and propose the photovoltaic characteristics of electrochemically synthesized solar cells.

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Thermal Property of Phosphate Glasses for Low Firing Temperature in PDP

  • Park, Jun-Hyun;Jung, Byung-Hae;Kim, Hyung-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.795-798
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    • 2002
  • Replacing Pb-free glass composition for the dielectric materials is expected in PDP industry. In this study, phosphate glasses, $P_2O_5$- ZnO- SnO (PZS), $P_2O_5$-ZnO-BaO (PZB) were selected for a new transparent dielectric. Thermal properties (Tg, CTE) were measured with differential thermal analyzer and thermal mechanical analyzer. The glass transition of the glasses was ranged at $365{\sim}405^{\circ}C$ for the PZS system and $5.9{\sim}9.5{\times}\;10^{-6}$ of thermal expansion were found. The PZB system showed $445{\sim}470^{\circ}C$ of glass transition. Thus, the glass compositions would be a potential candidate for a transparent dielectric layer in plasma display panel.

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Analysis of characteristics of TRL(Transmission line) in LTCC (low temperature cofired ceramic) system (저온 소성 유전체 세라믹 시스템에서의 전송 선로 특성 해석)

  • Yoo, Joshua;Lee, W.S.;Kang, N.K.;Park, J.C.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05c
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    • pp.23-26
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    • 2002
  • In ceramic systems using LTCC, many components including embedded passives and TRL's are used for composition of 3-dimensional circuit. So the exact analysis on this components must be performed. As for the TRL's, material properties including electrical conductivity of metal, loss factor and effective dielectric constant of dielectric material and geometrical factors like roughness of surface, vias, dimension of TRL structure have a large effect on the characteristics of transmission lines. Such properties of materials have different values in each system with ideal ones presented in text book. In this research, the effective material properties in each system are examined and the effect of material properties and geometrical factors on the characteristics of TRL's are analyzed and quantified by simulation and measurement.

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A Study on the Fabrication and Structural Properties of BaTiO$_3$ Thin Film by RF Sputtering (RF Sputtering법에 의한 BaTiO$_3$ 박막의 제조 및 구조적 특성에 관한 연구)

  • 이문기;류기원;배선기;이영희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.05a
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    • pp.193-197
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    • 1996
  • BaTiO$_3$films in pure Ar atmosphere were prepared by RF sputtering method at low substrate temperature(100$^{\circ}C$). The structural and crystallographic properties were studied with deposition conditions and annealing methodes. Deposition rates and structural properties of BaTiO$_3$ thin filles were investigated by the SEM and X-ray diffraction. The chemical composition of BaTiO$_3$ thin films grown on Si(100) wafer was studied by tole EDS and EPHA. The optimised Ar pressure and RF power were 8[mtorr] and 180[W], respectively. The thickness of BaTiO$_3$ thin films deposited at optimised conditions was ∼3400[${\AA}$], and the dielectric constant of the thin films heat-treated at 750[$^{\circ}C$] for 1[hr] was 259.

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Effects of Composition of Substrate on Transverse Rupture Strength and Bonding Strength of Cemented Carbide Coated with Titanium Carbide by CVD Process (화학흡착(CVD)법에 의한 TiC 흡착 시 모재가 피복 길항합금의 항면력 및 접착력에 미치는 영향)

  • Lee, Geon-U;O, Jae-Hyeon
    • Journal of the Korean institute of surface engineering
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    • v.24 no.1
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    • pp.8-8
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    • 1991
  • To investigate the effects of substrate on transverse-rupture strength(TRS) and bonding strength between substrate and TiC layer coated by CVD, two kinds of substrate (substrate A:WC-9.5wt%Co-MC*[low C], substrate B: WC-6wt% Co-MC*[high C] were studied in terms of Cobalt and C contents respectively. For preparation of test samples the coating parameters of deposition time, deposition temperature and deposition pressure were varied. The result show that the carbon contents in substrates have greater effects on the TRS of the CVD TiC coated cemented carbide than Co contents in substrates.

Weldability of Al Alloys, Part II :HAZ Cgaracteristics (알루미늄 합금의 용접특성 - part II)

  • 이창희;장래웅
    • Journal of Welding and Joining
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    • v.11 no.1
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    • pp.2-8
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    • 1993
  • A literature review was conducted to gather informations available on the welding metallurgy of aluminum alloys, emphasized on characteristics in the heat affected zone(HAZ). Nominal metallurgical reactions that occur in aluminum alloys provide a basis for understanding aluminum welding metallurgy. However, welding reactions differ to some extent because of the relatively short times involved, and the non-isothermal heating excursed. For non-heat treatable alloys, welding primarily affects these alloys by annealing (recrystallization and growth) and to a less extent, changes in low temperature precipitates. In the case of heat treatable alloys, the resulting HAZ properties depend upon alloy composition, starting temper, heat input and post weld heat treatments.

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Electrical and Optical Properties of $SnO_2$ : F Thin Films by Pyrosol Method (Pyrosol 법에 의한 $SnO_2$ : F 박막의 전기적 광학적 특성)

  • Yoon, Kyung-Hoon;Song, Jin-Soo;Kang, Gi-Hoan
    • Proceedings of the KIEE Conference
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    • 1990.07a
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    • pp.187-190
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    • 1990
  • A new technique is described for developing low-cost $SnO_2$ : F thin films as TCO (Transparent Conducting Oxide) substrate of a-Si solar cells. A novel Pyrosol equipment has been developed, and $SnO_2$ : F thin films have been deposited under the condition of varing dopant concentration, temperature and composition rate of solution. Futhermore, electrical and optical properties of thin films have been measured, and exhibit resistivity of $4.3{\times}10^{-4}{\Omega}$ cm and transmittance of 80% which is almost at the same level as those of $SnO_2$ : F thin films by CVD.

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Sequential Catalytic Combustion System (순차식 촉매연소 시스템)

  • 유상필;정남조;이승재;류인수;강성규;송광섭
    • Proceedings of the Korea Society for Energy Engineering kosee Conference
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    • 2004.05a
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    • pp.197-200
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    • 2004
  • Compared to conventional flame combustion, catalytic combustion had the advantage of oxidation of V.O.C. gas which was high voluminous, low caloric mixture flow. However, the temperature of mixture gas should be over the one of catalytic reaction start and the control of reaction on the catalytic surface tends to be vulnerable. To overcome these obstacles, composition of both catalytic combustor and heat exchanger was devised and named the sequential catalytic combustion system. In this system, only trigger unit needed preheating process for transient starting time. Once trigger unit was ignited, the next unit w3s supplied heat to ignite from that and same process was performed to the last one sequentially. When it come to steady state, whole mixture gas was oxidated at each unit simultaneously and preheating for trigger unit was not needed any more. System of 100 kcalh/hr capacity was devised and operated successfully.

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Effects of Composition of Substrate on Transverse Rupture Strength and Bonding Strength of Cemented Carbide Coated with Titanium Carbide by CVD Process (화학증착(CVD)법에 의한 TiC 증착 시 모재가 피복 초경합금의 항절력 및 접착력에 미치는 영향)

  • 이건우;오재현;이주완
    • Journal of the Korean institute of surface engineering
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    • v.25 no.1
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    • pp.8-15
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    • 1992
  • To investigate the effects of substrate on transverse-rupture strength(TRS) and bonding strength between substrate and TiC layer coated by CVD, two kinds of substrate (substrate A: WC-9.5wt% Co-MC*[low C], substrate B: WC -6wt% Co-MC*[high C]) were studied in terms of Cobalt and C contents respectively. For preparation of test samples the coating parameters of deposition time, deposition temperature and deposition pressure were varied. The results show that the carbon contents in substrates have greater effects on the TRS of the CVD TiC coated cemented carbide than Co contents in substrates. *MC:TiC+TaC

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Studies on the Anionic Copolymerization of Isocyanates (Isocyanates의 음이온 공중합에 관한 연구)

  • Lee, Dong-Choo
    • Journal of the Korean Chemical Society
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    • v.17 no.5
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    • pp.371-377
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    • 1973
  • The low temperature anionic copolymerization of p-tolylisocyanate ($M_1$) with n-hexylisocyanate ($M_2$) in DMF was carried out with NaCN. Copolymers were characterized by osmometry and I. R. spectrophotometry. Also copolymer composition was analyzed by spectral measurements. The behavior of this copolymerization system was the type of less ideal, that is the $M_2$ prefers to react exclusively with the same kind of species. The stress-strain behavior of the copolymer obtained from equimolar comonomer feed exhibited somewhat brittle or rigid character.

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