• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.64-71
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• 2023

In this study, we investigated the effects of BiAlSiO glass composition on its glass forming range, thermal properties, and plasma resistance. The results showed that increasing the Al2O3 content suppressed the tendency for crystallization and hindered glass formation beyond a certain threshold. Bi2O3 was found to increase the content of non-bridging oxygen, resulting in a decrease in glass transition temperature and an increase in thermal expansion coefficient. Furthermore, the etching rate was found to improve with increasing Al2O3 content but decrease with increasing SiO2 content. It was concluded that the boiling point of fluorinated compounds should be considered to 900℃. Therefore, this study is expected to contribute to the understanding of the properties of BiAlSiO glass and its application to low temperature melting PRG compositions.

• Fibers and Polymers
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• v.4 no.2
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• pp.49-53
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• 2003

Polyurethane (PU) layer and copolymer consisted of the different molecular weights (1000 and 2000 g/mol) of poly(propylene glycol) (PPG) were prepared. The damping and mechanical properties of these materials were compared with PU 1000 made by PPG having the molecular weight of 1000 g/mol. The optimum composition of PU2000 used for PU layer and copolymer was diphenylmethane diioscynate (MDI)/propylene glycol (PPG)/butanediol (BD) (1/0.3/0.7) based on the damping and mechanical properties. The damping peak of PU copolymer was higher than those of PU layer and PUI 1000 in low temperature range (-30- $10^{\circ}C$). For application in noise reduction, the transmission loss of the mechanical vibration through solid structure was measured. PU layer and copolymer were used as a damping layer. The transmission loss of PU copolymer was more effective than those of PU layer and PU 1000 in the experimental frequency range.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1768-1770
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• 1999

Porous silicon were prepared under various anodization condition on n-Si substrates. Chronoamperometric curves of porous silicon depended on potentials, composition and temperature of electrolytes. and intensity of UV irradiation. Anodic current density decreased continuously at low potential $(\leq0.5V)$ but increased at high potentials (>2V vs. Ag QRE). the difference in chronoamperometric curve is due to different activation energy in the processes involved in porous silicon formation.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.71-75
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• 2002

GaAs polycrystalline thin films with good performance were prepared on conducting glass by hot wall epitaxy (HWE), which were used for solar cell. Electron probe micro-analyzer (EPMA) was applied for the composition, morphology of surface and cross-section of grown films, and X-ray diffraction (XRD) for their phase structure; Raman scattering spectum (RSS) and photoluminescence (PL) were used for evaluating their optical characteristics. The results show that, there is textured structure on the surface of grown GaAs polycrystalline films, which is greatly promised to be suitable for the candidate of solar cell with low cost and high efficiency. It is concluded that the source and substrate at temperature of 900 ~ 930 $\^{C}$ and 500 $\^{C}$ respectively would be beneficial for such films.

• KSBB Journal
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• v.13 no.3
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• pp.284-288
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• 1998

Production of inulo-oligosaccharides from inulin was carried out with the maximum yield of 94% using a purified endoinulinase from Aspergillus ficcum. The optimum reaction temperature and pH were 55-60$^{\circ}C$ and pH 5.5-6.0, respectively. The Michaelis constant and maximum reaction velocity of the endoinuinase for inulin were 13.27 g/L and 0.13 g/L$.$min at 55$^{\circ}C$, pH 5.5, respectively. Inulin source had no significant effect on oligosaccharide yield and product composition, although initial production rate differed according to inulin origins. The reaction pH was a critical factor in inulo-oligosaccharide production because considerable free monosaccharides were released, decreasing oligosaccharide yield at low pH conditions. An empirical relationship describing the reaction performance was developed from kinetic data: the time to reach maximum oligosaccharide yield (tw) as a function of initial concentration of inulin (lo) and enzyme (Eo); i.e., log tM = -1.025 log Eo - 0.011 l0 + 2.655.

• Electrical & Electronic Materials
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• v.8 no.4
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• pp.400-405
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• 1995

ZnO films have been grown easily with the conventional thermal evaporation method on SiO$\_$2/ coated Si wafers. Anhydrous zinc acetate has been used as evaporation source. Zinc-acetate was directly heated in the laboratory-made brass boat. Zinc-acetate was sublimed at the boat temperature of about 220.deg. C. The substrates were heated to 600.deg. C with home made tantalium heater. Oxygen has been flowed into the deposition chamber to change the partial pressure of oxygen. X-ray diffraction patterns showed all the films to be amorphous. The films deposited at high oxygen pressure exhibit higher resistivity than films at low pressure. Energy dispersive spectroscopy(EDS) and rutherford backscattering spectrometry(RBS) were conducted on the films to reveal the composition of the ZnO films.

• 연구논문집
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• s.29
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• pp.163-171
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• 1999

A new titanium alloy system. Ti-xFe-ySi (x,y=0-4 wt%). was designed and characterized with the point at low cost and high strength for casting applications. Fe improved room and elevated temperature mechanical properties owing to solid solution hardening and beta phase stabilization. Si yielded titanium silicides and Si addition over 1 wt% resulted in poor ductility due to coarse silicide chains at prior beta boundaries. The optimum composition was found to be Ti-4Fe-(0.5-1)Si in the viewpoint of tensile strength and ductility which are comparable to the Ti-6Al-4V. The metal-mould reaction was also examined for Ti-xFe and Ti-xSi binary alloy system. The thickness of surface reaction layer w as not affected significantly with Fe content, while it was decreased with Si content. In the Ti-4Si alloy, no reaction layer was found. The depth of surface hardening layer was about $200\mum$ regardless of the mould materials.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.345-348
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• 2006

The piezoelectric thick films were fabricated on silicon substrates by screen printing method. By developing a low-temperature sinterable piezoelectric composition and a new poling technique, we fabricated the high-performance piezoelectric thick films on silicon which can be applied for piezoelectric MEMS applications such as micropumps of the ink jet printer heads.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.814-817
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• 2003

The sintering behavior of $BaO-B_{2}O_{3}-ZnO$, which is Pb-free glass-ceramic system, was examined as functions of the composition and the amount and particle size of $Al_{2}O_{3}$ filler. Different kinds of modifiers were added and $Al_{2}O_{3}$ fillers with different particle sizes ($1.5{\mu}m$ and $4.5{\mu}m$) were added. The glass frit-filler composites were sintered in the temperature range $520{\sim}580^{\circ}C$. X-ray diffraction results revealed that some of the composites crystallized during sintering. Dielectric constant and thermal expansion coefficient the glass-ceramics were analyzed.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.386-389
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• 1989

Phosphorus nitride films on InP surface were grown by a Photo-CVD (chemical vapor deposition) technique over 100-250 $^{\circ}C$ range of substrate temperature, which is based on direct photolysis of $PCl_3/H_2$ and $NH_3$ gas mixtures by 185nm ultraviolet light from a low pressure mercury lamp. The film growth rate ed the refractive index(n) were shown about 700-800 ${\AA}/hr$ and 1.7-1.8, respectively. Composition ratio and interface properties were analyzed by AES(Auger Electron Spectroscopy) and XPS (X-ray Photoelectron Spectorscopy) technique.