• Journal of Information Display
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• v.11 no.3
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• pp.109-112
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• 2010

The solid phase compositions and dielectric properties of silicon nitride ($SiN_x$) films prepared using the plasma enhanced chemical vapor deposition (PECVD) technique at a low temperature ($200^{\circ}C$) were studied. Controlling the source gas mixing ratio, R = $[N_2]/[SiH_4]$, and the plasma power successfully produced both silicon-rich and nitrogen-rich compositions in the final films. The composition parameter, X, varied from 0.83 to 1.62. Depending on the film composition, the dielectric properties of the $SiN_x$ films also varied substantially. Silicon-rich silicon nitride (SRSN) films were obtained at a low plasma power and a low R. The photoluminescence (PL) spectra of these films revealed the existence of nano-sized silicon particles even in the absence of a post-annealing process. Nitrogen-rich silicon nitride (NRSN) films were obtained at a high plasma power and a high R. These films showed a fairly high dielectric constant ($\kappa$ = 7.1) and a suppressed hysteresis window in their capacitance-voltage (C-V) characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.2
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• pp.107-111
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• 2018

In this study, we designed the temperature coefficient of resistance (TCR) and heat radiation properties of shunt fixed resistors by adjusting the atomic composition of a metal alloy resistor, and fabricated a resistor that satisfied the designed properties. Resistors with similar atomic composition of copper and nickel showed low TCR and excellent shunt fixed resistor properties such as short-time overload, rated load, humidity load, and high temperature load. Finally, we expect that improved sensor accuracy will be obtained in current-distribution-type shunt fixed resistor for IoT sensors by designing the atomic composition of the metal alloy resistor proposed in this work.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.170-170
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• 1999

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2004.11a
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• pp.266-270
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• 2004

SiC materials have been extensively studied for high temperature components in advanced energy system and advanced gas turbine because it has excellent high temperature strength, low coefficient of thermal expansion, good resistance to oxidation and good thermal and chemical stability etc. However, the brittle characteristics of SiC such as low fracture toughness and low strain-to fracture still impose a severe limitation on practical applications of SiC materials. For these reasons, SiC/SiC composites can be considered as a promising for various structural materials, because of their good fracture toughness compared with monolithic SiC ceramics. But, high temperature and pressure lead to the degradation of the reinforcing jiber during the hot pressing. Therefore, reduction of sintering temperature and pressure is key requirements for the fabrication of SiC/SiC composites by hot pressing method. In the present work, monolithic Liquid Phase Sintered SiC (LPS-SiC) was fabricated by hot pressing method in Ar atmosphere at $1800^{\circ}C$ under 20MPa using $Al_2O_3,\;Y_2O_3\;and\;SiO_2$ as sintering additives in order to low sintering temperature and sintering pressure. The starting powder was high purity $\beta-SiC$ nano-powder with all average particle size of 30mm. The characterization of LPS-SiC was investigated by means of SEM and three point bending test. Base on the composition of sintering additives-, microstructure- and mechanical property correlation, tire compositions of sintering additives are discussed.

• Korean Journal of Metals and Materials
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• v.50 no.4
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• pp.331-337
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• 2012

Electrical properties as a function of composition in silicon nitride ($SiN_x$) films grown at low temperatures ($<200^{\circ}C$) were studied for applications to photonic devices and thin film transistors. Both silicon-rich and nitrogen-rich compositions were successfully produced in final films by controlling the source gas mixing ratio, $R=[(N_2\;or\;NH_3)/SiH_4]$, and the RF plasma power. Depending on the film composition, the dielectric and optical properties of $SiN_x$ films varied substantially. Both the resistivity and breakdown field strength showed the maximum value at the stoichiometric composition (N/Si = 1.33), and degraded as the composition deviated to either side. The electrical properties degraded more rapidly when the composition shifted toward the silicon-rich side than toward the nitrogen-rich side. The composition shift from the silicon-rich side to the nitrogen-rich side accompanied the shift in the photoluminescence characteristic peak to a shorter wavelength, indicating an increase in the band gap. As long as the film composition is close to the stoichiometry, the breakdown field strength and the bulk resistivity showed adequate values for use as a gate dielectric layer down to $150^{\circ}C$ of the process temperature.

• Journal of Microbiology and Biotechnology
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• v.18 no.4
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• pp.711-717
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• 2008

To speed up the conversion of rice straw into feeds in a low-temperature region, a start culture used for ensiling rice straw at low temperature was selected by continuous enrichment cultivation. During the selection, the microbial source for enrichment was rice straw and soil from two places in Northeast China. Lab-scale rice straw fermentation at $10^{\circ}C$ verified, compared with the commercial inoculant, that the selected start culture lowered the pH of the fermented rice straw more rapidly and produced more lactic acid. The results from denatured gradient gel eletrophoresis showed that the selected start culture could colonize into the rice straw fermentation system. To analyze the composition of the culture, a 16S rRNA gene clone library was constructed. Sequencing results showed that the culture mainly consisted of two bacterial species. One (A) belonged to Lactobacillus and another (B) belonged to Leuconostoc. To make clear the roles of composition microbes in the fermented system, quantitative PCR was used. For species A, the DNA mass increased continuously until sixteen days of the fermentation, which occupied 65%. For species B, the DNA mass amounted to 5.5% at six days of the fermentation, which was the maximum relative value during the fermentation. To the authors' best knowledge, this is the first report on ensiling rice straw with a selected starter at low temperature and investigation of the fermented characteristics.

• Journal of the Korean Society of Combustion
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• v.3 no.1
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• pp.21-29
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• 1998

Mathematical modeling of combustion characteristics in HVOF thermal spray processes was carried out on the basis of equilibrium chemistry. The main objective of this work was the development of a computation code which allows to determine chemical composition of combustion products, adiabatic flame temperature, thermodynamic and transport properties. The free energy minimization method was employed with the descent Newton-Raphson technique for numerical solution of systems of nonlinear thermochemical equations. Adiabatic flame temperature was calculated by using a Newton#s iterative method incorporating the computation module of chemical composition. The performance of this code was verified by comparing computational results with data obtained by ChemKin code and in the literature. Comparisons between the calculated and measured flame temperatures showed a deviation less than 2%. It was observed that adiabatic flame temperature augments with increase in combustion pressure; the influence was significant in the region of low pressure but becomes weaker and weaker with increase in pressure. Relationships of adiabatic flame temperature, dissociation ratio and combustion pressure were also analyzed.

• Journal of Korea Foundry Society
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• v.42 no.6
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• pp.392-397
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• 2022

In order to compliant the stringent exhaust emission regulations, higher fuel efficiency and cleaner exhaust gas in combustion engines have been required. To improve combustion efficiency, an exhaust gas temperature is increasing, therefore higher temperature resistance is required for components in exhaust system, especially turbine wheel in turbocharger. IN100 looks quite attractive candidate as it has high temperature properties with low density, however it has low castability due to poor ductility at high temperature. In this study, the balance of Al and Ti composition was optimized from the base alloy IN100 to improve the high temperature ductility by expanding the γ single phase region below the solidification temperature, while obtaining the high temperature strength by maintaining the volume fraction of γ' phase equivalent to IN100 around 1000℃. Furthermore, the high temperature creep rupture life increased by adding a small amount of Ta. The alloy developed in this study has high castability, low density and high specific strength at high temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.1
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• pp.13-16
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• 2017

In this study, in order to develop composition ceramics for refrigeration device application, $Ba(Ti_{0.9}Zr_{0.1})O_3$ composition was fabricated using conventional solid-state method. Electrocaloric effect of this ceramic was investigated using the characteristics of P-E hysteresis loops at wide temperature range from room temperature to $150^{\circ}C$. Curie temperature of $Ba(Ti_{0.9}Zr_{0.1})O_3$ ceramics showed $80^{\circ}C$. The maximum value of ${\Delta}T=0.12^{\circ}C$ in ambient temperature of $115^{\circ}C$ under 30 kV/cm was appeared. It is concluded that $Ba(Ti_{0.9}Zr_{0.1})O_3$ ceramics can be applied as refrigeration device application.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.548-551
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• 1995

The effect of Cu substitution on the properties of NiZn ferrites sintered at low temperature with composition is investigated. The densification of NiCuZn ferrite in dependent upon Cu content in the composition of (N/sub 0.5-x/Cu/sub x/ Zn/sub 0.5/O)(Fe/sub 2/O/sub 3/)/sub 0.98/. Electrical resistivity is maximum at x=0.2. Dispersion characteristics of complex permeability of (Ni/sub 0.5-x/ Cu/sub x/Zn/sub 0.5/O)(Fe/sub 2/O/sub 3)/sub 0.98/ is observed above x=0.3 and relaxation frequency increases with higher temperature. The magnetic loss of NiCuZn ferrite is occurred above the Cu content x=0.3 at a low frequency.