• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.5.1-5.1
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• 2008

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.117.1-117.1
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• 2007

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.37-52
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• 2013

무어의 법칙에 따르면, 반도체의 집적도 2년마다 2배씩 증가한다고 한다. 무어의 법칙은 지금까지는 집적회로 기술의 발전을 잘 예측했다. 하지만 트랜지스터의 사이즈를 줄일수록 누수전류와 회로의 저항을 조절하기 어렵기 때문에 트랜지스터의 소형화에는 한계가 있다. 우리는 곧 무어의 법칙의 한계를 맞이할 것이다. 그래서 트랜지스터를 더욱 소형화시키기 위해서는 bottom-up analysis가 필요한 시점이다. Top-down analysis가 초기의 커다란 트랜지스터에서 점점 소형화를 시켜 작은 트랜지스터를 만든다는 개념인 반면, Bottom-up analysis는 처음부터 작은 분자를 조작하여 트랜지스터와 같은 성질을 띄도록 만드는 개념이다. 분자가 기억소자로서 이용되려면 저항이 다른 2가지 안정한 상태가 필요하다. 이번 연구에서 나는 기억소자를 디자인 하기 위하여 high spin state와 low spin state 두 가지 안정한 상태를 가지는 spin crossover complex를 이용하기로 했다. 이전의 연구에서 spin crossover 는 전기장을 이용해서도 유도될 수 있다고 확신하였고, 이를 이용해서 기억소자를 디자인하기로 하였다. 이번 연구를 위해서 symmetry를 가지는 octahedral spin crossover complex를 디자인하였고 이를 '기억 분자'라고 명명했다. 그리고 이 분자의 high spin state와 low spin state가 전기장을 이용하여 서로 바뀔 수 있는지 가능성을 DFT with B3LYP functional을 이용해서 비교했다. 그 결과로 전기장을 이용하여 기억분자의 spin crossover을 일으킬 수는 있지만 abnormally strong electric field를 써야 한다는 사실을 알아냈다. 이번 연구를 토대로 추후의 연구를 위해, 기억소자가 되기 위하여 분자가 어떤 특징을 만족시켜야 하는지를 분석했다.

• Journal of Welding and Joining
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• v.23 no.6
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• pp.77-86
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• 2005

Low temperature bonding of the silicon and glass using the Spin-on Glass (SOG) has been conducted experimentally to figure out the effects of the SOG solution composition and process variables on bond strength using the Design of Experiment method. In order to achieve the high quality bond interface without rack, sufficient reaction time of the optimal SOG solution composition is needed along with proper pressure and annealing temperature. The shear strength under the optimal SOG solution composition and process condition was higher than that of conventional anodic bonding and similar to that of wafer direct bonding.

• Proceedings of the Korean Magnestics Society Conference
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• 2014.11a
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• pp.130-130
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• 2014

• 한국벤처창업학회:학술대회논문집
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• 2022.04a
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• pp.157-161
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• 2022

Building on the DC interaction model between a parent company and its spin-offs, we examine that a dyadic relationship can be differentiated within the functions of space, motivation, and time. We investigate that these three factors encompassing the parent-spin-off DC relationship can be applicable to both linear(i.e., geographic proximity and low spin-off CEO's salary is positive) and nonlinear(i.e., too much frequency of new spin-off creation is as harmful as too little) effects on determining the performance of spin-off firms. The direction of causality is underpinned by social capital, human capital, and compensation-activation theory rather than by the normal consequences of previous empirical research. Further, our results suggest the overlap between DC and entrepreneurship; namely, spin-off firms create, learn, and exploit opportunities through a reconfiguration of parent DC so that DC establishes itself as a key concept in the entrepreneurship domain.

• Journal of Magnetics
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• v.2 no.4
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• pp.143-146
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• 1997

The effects of deposition rate on exchange coupling field Hex and coercive field Hc in NiO spin-valves are discussed. The Hex and Hc increased with deposition rate of NiO film. The rms roughnesses of the NiO deposited at 6 ${\AA}$/min (NiO-Low) and 30${\AA}$/min (NiO-High) were almost similar, however, the short-range roughness increased with the deposition rate. The Hex, Hc and surface morphologies for the modulated NiO spin-valve films such as NiO-Low\NiO-High\NiO-Low and NiO-High\NiO-Low were investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.148-152
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• 2001

One set of MMIC library has been developed using gate recess etching by spin processor. It is superior than that of dipping Method in the uniformity and the reproducibility of gate recess. A DC characteristics of p-HEMT have a uniform characteristics in the whole wafer than that of dipping method. The low noise p-HEMT with the $0.6{\mu}m$ and $200{\mu}m$ of gate length and gate width, respectivily, has a uniform characteristics of Idss 130~145 mA, conductances 190~220mS/nm, and threshold voltage -0.7~-1.1V in the drain voltage of 2V.

• Bulletin of the Korean Chemical Society
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• v.24 no.7
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• pp.981-985
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• 2003

Fluorine-19 NMR solution measurements have been made for various phenyl-fluorinated iron porphyrin complexes. Large chemical shifts for phenyl fluorine signals of iron(III) and iron(II) are observed, and these signals are sensitive to electronic structure. The chemical shift differences in ortho-phenyl fluorine signals between high-spin ferric and low-spin ferric tetrakis(pentafluorophenyl)porphyrins are approximately 40 ppm, whereas the differences are approximately 7 ppm between high- and low-spin states of ferrous tetrakis(pentafluorophenyl)porphyrin complexes. Analysis of fluorine-19 isotropic shifts for the iron(III) tetrakis(pentafluorophenyl) porphyrin using fluorine-19 NMR indicates there is a sizable contact contribution at the ortho-phenyl fluorine ring position. Large phenyl fluorine-19 NMR chemical shift values, which are sensitive to the oxidation and spin states, can be utilized for identification of the solution electronic structures of iron(III) and iron(II) porphyrin complexes.

• Bulletin of the Korean Chemical Society
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• v.22 no.4
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• pp.413-416
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• 2001