• 반도체디스플레이기술학회지
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• 제8권3호
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• pp.13-17
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• 2009

we have studied characterization of microbolometer based on the co-sputtered silicon-antimony ($Si_{1-x}Sb_x$) thin film for infrared microbolometer. We have investigated the resistivity and the temperature coefficient of resistance (TCR) with annealing. We deposited the films using co-sputtering method at $200^{\circ}C$ in the Ar environment. The Sb concentration has been adjusted by applying variable DC power from Sb targets. TCR of deposited $Si_{1-x}Sb_x$ films have been measured the range of -2.3~-2.8%/K. The resistivity of the film is low but TCR is higher than the other bolometer materials. Resistivity of the films has not been affected hugely according to the low annealing temperature however the resistivity has been dramatically decreased over $250^{\circ}C$. It is caused of a phase change due to the rearrangement of Si and Sb atoms during crystallization process of the films.

• 한국재료학회지
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• 제29권11호
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• pp.715-719
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• 2019

Molybdenum is a low-resistivity transition metal that can be applied to silicon devices using Si-metal electrode structures and thin film solar cell electrodes. We investigate the deposition of metal Mo thin film by plasma-enhanced atomic layer deposition (PE-ALD). $Mo(CO)_6$ and $H_2$ plasma are used as precursor. $H_2$ plasma is induced between ALD cycles for reduction of $Mo(CO)_6$ and Mo film is deposited on Si substrate at $300^{\circ}C$. Through variation of PE-ALD conditions such as precursor pulse time, plasma pulse time and plasma power, we find that these conditions result in low resistivity. The resistivity is affected by Mo pulse time. We can find the reason through analyzing XPS data according to Mo pulse time. The thickness uniformity is affected by plasma power. The lowest resistivity is $176{\mu}{\Omega}{\cdot}cm$ at $Mo(CO)_6$ pulse time 3s. The thickness uniformity of metal Mo thin film deposited by PE-ALD shows a value of less than 3% below the plasma power of 200 W.

• 자원환경지질
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• 제13권3호
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• pp.159-166
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• 1980

A model study was conducted for the investigation of apparent resistivity variation along with electric resistivity variation of host rock and dip variation of bed. Experiments were carried out for the cases of horizontal and dipping beds in a water tank by using Wenner and Schlumberger arrays and by changing salinity of water. The ratios of resistivity values of the bed to that of brine were 1 : 10, 1 : 50, 1 : 100 and 1 : 500. Natural coally-shale of $55cm{\times}35cm{\times}3.5cm$ was used as a bed for experimental model, and brine as a host rock. Equi-resistivity curves and characteristic curves were obtained for each case of the experiment. The equi-resistivity curve was drawn both on the cross section parallel to strike of bed and longitudinal section perpendicular to it. The characteristic curve was drawn on the cross section. In the case of dipping bed of different dips, the curves are parallel to the boundary of the bed in the upper part of the bed, and are inclined to the opposite direction with the same angle of the dip of bed in the lower part. We can deduce, from the equi-resistivity curves, the location, shape and dip of the bed. It is shown in the characteristic curves that when the ratio of resistivity value of bed to that of host rock increases, the slope of curves becomes steeper, location of low-resistivity zone lower, and the width of it narrower. The slope of curves also becomes steeper when dip of bed increases. We can deduce, from the characteristic curves, the ratio of resistivity values between adjacent beds. It was found out from the experiments that electric resistivity method could be applicable to prospecting for underground geology with an electric resistivity contrast of 1 : 10. This fact strongly suggests that distinction of coal from coally-shale could be possible in a certain field condition.

• 대한기계학회논문집B
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• 제24권4호
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• pp.526-532
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• 2000

Recent studies have been directed toward obtaining a better understanding of the application of electrostatic precipitators to collect fly ash particles produced in a coal-fired power plant. Electrical resistivity can be described as the resistance of the collected dust layer to the flow of electrical current and is an important property for the collection efficiency in the electrostatic precipitator. In this paper, fly ash resistivity as a function of temperature up to $450^{\circ}C$ has been experimentally investigated using the resistivity meter consisted of the movable electrode, dust cup, and furnace. Resistivity was found to increase with increased temperature up to $200^{\circ}C$ due to the reduction of water concentration and then gradually decrease with increased temperature due to the activation of electrons. As the resistivity of fly ash in the flue gas temperature of $150^{\circ}C$ was measured >$10^{10}$ ohm cm, the efficiency of fly ash removal in the electrostatic precipitator might be expected to be low due to back-corona phenomenon. Flue gas conditioning in the electrostatic precipitator to reduce the resistivity of fly ash as required.

• 지질공학
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• 제29권3호
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• pp.223-236
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• 2019

전기비저항탐사는 지질 분포나 단층 파쇄대의 유무 등의 지질 구조, 지층의 풍화 및 변질 정도, 지하수 등을 파악하기 위하여 광범위하게 활용되는 탐사기법이다. 본 연구에서는 지하 전기비저항의 분포특성을 분석하기 위하여 총 6개 측선을 중심으로 울릉도 나리분지와 알봉분지 주변 지하 칼데라 퇴적층과 지질 구조를 파악하기 위하여 기존의 쌍극자배열법(A 방법과 C 방법)의 탐사결과와 함께 변형된 쌍극자배열법(D 방법)을 적용하여 연구를 수행하였다. 본 연구결과, 변형된 쌍극자배열법을 적용하여 최적의 지하 비저항 분포단면 분석을 통해 퇴적층과 연약대가 분포하는 구간인 500 ohm-m 이하의 저비저항대와 화산암체인 조면안산암질 암류가 분포하는 5,000 ohm-m 이상의 고비저항대의 경계를 명확하게 파악할 수 있었다. 알봉분지의 퇴적층은 평균 50~100m 내외, 나리분지의 퇴적층은 평균 약 100~200m 내외의 두께로 분포하는 것으로 추정되며, 칼데라 단층으로 추정되는 이상대는 지표부근에서 탐사심도 하부까지 500 ohm-m 이하의 저비저항대가 수직으로 연장성을 가지면서 암반 내 연약대와 구분되는 것으로 분석되었다.

• 한국전기전자재료학회논문지
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• 제27권8호
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• pp.483-485
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• 2014

Transparent amorphous In-Si-O (ISO)/Ag/In-Si-O (ISO) has been reported for low emissivity (low-e) applications. Effective Si doping into the $In_2O_3$ matrix led to a completely amorphous ISO film as well as a low resistivity and a high optical transmittance. The optical and electrical performances were examined by measuring transmittance with a UV-VIS spectrophotometer and resistivity with a Hall effect measurement. Consequently, low-e glass with ISO/Ag/ISO showed a high transparency in the visible region and low emissivity in the infrared region, indicating that ISO is a promising amorphous transparent electrode for low-e glass.

• 한국결정성장학회지
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• 제9권6호
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• pp.535-541
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• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si doped GaAs crystals for photonic devices, and low-dislocation-density low-residual-strain 4-inch to 6-inch semi-insulating GaAs crystals for electronic devices by Vertical Bridgman(VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.129-157
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• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si-doped GaAs crystals for photonic devices [1], and low-dislocation-density low-residual-strain 4-inch to 6-inch [2, 3] semi-insulating GaAs crystals for electronic devices by Vertical Boat (VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than that of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

• 조명전기설비학회논문지
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• 제29권4호
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• pp.69-76
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• 2015

This paper presents the results of an investigation into the frequency-dependent electrical parameters for different types of soil as a function of moisture content. The frequency dependence of soil electrical parameters is very important in the design of grounding systems. In fact, the performance of grounding systems is greatly dependent upon various factors such as soil type, particle size, water content, temperature, frequency, and the like. The resistivity and relative permittivity for four different soils were measured and analyzed in the frequency range of 1kHz - 1MHz. Soil resistivity declined as moisture content and frequency increased. In particular, the frequency dependence of soil resistivity was significant as the moisture content was low. In contrast, the relative permittivity of soil dramatically declined at the frequency of 10kHz or below as the moisture content increased, showing the opposite pattern in terms of variation patterns, compared to resistivity.

• 한국지하수토양환경학회:학술대회논문집
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• 한국지하수토양환경학회 2004년도 임시총회 및 추계학술발표회
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• pp.446-449
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• 2004

High resolution geophysical imaging to delineate costal aquifer and seawater- freshwater interface has been applied in Baesu-eup, Yeonggwang-gun, Jeolla province Electrical resistivity information from vertical electrical sounding and 2-D electrical resistivity survey is key parameter to map equivalent Nacl concentration map over the survey area. Seismic velocity from refraction tomographic survey, on the other hand, gives more reliable information on the subsurface stratagraphy than electrical resistivity methods which frequently suffer from low resolution due to masking effect. We imaged high-resolution 3-D structure of costal aquifer by correlating the electrical resistivity with seismic velocity, and mapped equivalent NaCl concentration map using resistivity and hydro-geological information from well logging.