• Journal of the Korean Society for Heat Treatment
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• v.22 no.3
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• pp.143-148
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• 2009

We have fabricated Ti metal films on Cu wire substrates by using a RF magnetron sputtering method at different RF powers (0, 30 and 60 W) in a high vacuum, and we have investigated the thin film characteristics and resistivity. The ion bombardment effect is increased by the method to superimpose RF power to DC power applied to two poles of the base; thus, the thin film is deposited at sputtering gas pressures below 1 Pa. Moreover, the thin film formation of the multilayer structure becomes possible by gradually injecting the RF power, and the thin film quality is improved.

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.05a
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• pp.59-60
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• 1993

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.595-601
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• 2009

For the silicon oxide $(SiO_x)$ films prepared by using the facing target sputtering (FTS) apparatus that was manufactured to enhance the preciseness of the fabricated thin-film and sputtering yield rate by forming a higher-density plasma in the electrical discharge space for using it as a thin-film passivation system for flexible organic light emitting devices (FOLEDs). The deposition characteristics were investigated under various process conditions, such as array of the cathode magnets, oxygen concentration$(O_2/Ar+O_2)$ introduced during deposition, and variations of distance between two targets and working pressure. We report that the optimum conditions for our FTS apparatus for the deposition of the $SiO_x$ films are as follows: $d_{TS}\;and\;d_{TT}$ are 90mm and 120mm, respectively and the maximum deposition rate is obtained under a gas pressure of 2 mTorr with an oxygen concentration of 3.3%. Under this optimum conditions, it was found that the $SiO_x$ film was grown with a very high deposition rate of $250{\AA}$/min by rf-power of $4.4W/cm^2$, which was significantly enhanced as compared with a deposition rate (${\sim}55{\AA})$/min) of the conventional sputtering system. We also reported that the FTS system is a suitable method for the high speed and the low temperature deposition, the plasma free deposition, and the mass-production.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.28.1-28.1
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• 2009

The superior properties of ZnO such as high exciton binding energy, high thermal and chemical stability, low growth temperature and possibility of wet etching process in ZnO have great interest for applications ranging from optoelectronics to chemical sensor. Particularly, vertically well-aligned ZnO nanorods on large areas with good optical and structural properties are of special interest for the fabrication of electronic and optical nanodevices. Currently, low-dimensional ZnO is synthesized by metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), thermal evaporation, and sol.gel growth. Recently, our group has been reported about achievement the growth of Ga-doped ZnO nanorods using ZnO seed layer on p-type Si substrate by RF magnetron sputtering system at high rf power and high growth temperature. However, the crystallinity of nanorods deteriorates due to lattice mismatch between nanorods and Si substrate. Also, in the growth of oxide using sputtering, the oxygen flow ratio relative to argon gas flow is an important growth parameter and significantly affects the structural properties. In this study, Phosphorus (P) doped ZnO nanorods were grown on c-sapphire substrates without seed layer by radio frequency magnetron sputtering with various argon/oxygen gas ratios. The layer change films into nanorods with decreasing oxygen partial pressure. The diameter and length of vertically well-aligned on the c-sapphire substrate are in the range of 51-103 nm and about 725 nm, respectively. The photoluminescence spectra of the nanorods are dominated by intense near band-edge emission with weak deep-level emission.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.704-710
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• 2000

Metal electrode materials for plasma display panel should have low electrical resistivity in order to maintain stable gas discharge and have fast response time. They should also hae good film uniformity adhesion and thermal stability. In this study Cr/Cu/Cr metal electrode structure is formed by DC magnetron sputtering. Cr and Cu films were deposited on ITO coated glasses with various DC power density and main pressures as the major parameters. After metal electrodes were formed a heat treatment was followed at 55$0^{\circ}C$ for 20 min in a vacuum furnace. The intrinsic stress of the sputtered Cr film passed a tensile stress maximum decreased and then became compressive with further increasing DC power density. Also with increasing the main pressure stress turned from compression to tension. After heat the treatment the electrical resistivity of the sputtered Cu film of 2${\mu}{\textrm}{m}$ in thickness prepared at 1 motor with the applied power density of 3.70 W/cm$^2$was 2.68 $\mu$$\Omega$.cm With increasing the main pressure the DC magnetron sputtered Cu film became more open structure. The heat treatment decreased the surface roughness of the sputtered Cr/Cu/Cr metal electrodes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.527-534
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• 1998

Thin film deposition of InN, which is a less-studied III-nitride compound semiconductor because of the difficulty if crystal growth, was performed by rf reactive sputtering method using In target and $N_2$reactive gas. The structrual, electrical, and optical properties of the produced films were measured and disussed according to the sputtering parameters such as deposition pressure, rf power, and substrate temperature. From the result of deposition pressure, rf power, and substrate temperature, we could obtain optimal conditions of 5m Torr, 60W, $60^{\circ}C$ for preparing InN thin film with high crystallinity, low carrier concentration, and high Hall mobility. The carrier concentration, Hall mobility, and optical bandgap of the fabricated InN thin films at optimal condition were $6.242\times10^{18}cm^{-3}, 212.526cm^2/V\cdot$ｓ, and 1.912eV, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.468-472
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• 2011

Conductive $SrMoO_3$ thin films were fabricated by RF magnetron sputtering with the powder-type sputtering target, and annealed for crystallization. When RTP (rapid thermal processing) in vacuum was applied, the fabricated thin films showed the mixed phases of $SrMoO_3$ and $SrMoO_4$, but $SrMoO_3$ phase could be promoted by the lowering of the working pressure during deposition. In order to eliminate $O_2$ gas during deposition and annealing, further lowering of the working pressure and furnace annealing in hydrogen atmosphere were tried. With the optimization of the deposition and annealing conditions, the thin film with nearly single-phase of $SrMoO_3$ was obtained, and it showed good electrical conduction properties with a low resistivity of $2.5{\times}10^{-3}{\Omega}{\cdot}cm$ at room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.412-413
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• 2007

We report on the electrical, optical, and structural properties of indium zinc tin oxide (IZTO) anode films grown at room temperature on glass substrate. The IZTO anode films grown by a RF magnetron sputtering were investigated as functions of RF power, working pressure, and process time in pure Ar ambient. To investigate electrical, optical and structural properties of IZTO anode films, 4-point probe, Hall measurement, UV/Vis spectrometer, Field Emission Scanning Electron Microscopy (FE-SEM), and X-ray diffraction (XRD) were performed, respectively. A sheet resistance of $13.88\;{\Omega}/{\square}$, average transmittance above 80 % in visible range were obtained from optimized IZTO anode films grown on glass substrate. These results shown the amorphous structure regardless of RF power and working pressure due to low substrate temperature.

• Journal of the Korean Ceramic Society
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• v.41 no.5
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• pp.364-369
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• 2004

The barrier and optical properties of AlO$_{x}$ thin films on polycarbonate deposited by Reactive Ion Beam Sputtering (RIBS) were investigated at different oxygen partial pressure. We measured the deposition rate of AlO$_{x}$ thin films. As the oxygen partial pres-sure increased, the deposition rate increased then decreased. The changes of deposition rate are associated with the properties of deposited films. The properties of deposited AlO$_{x}$ thin films were studied using X-ray Photoelectron Spectroscopy (XPS), Scan-ning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM). Optimum deposition parameters were found for fabricat-ing aluminum oxide thin films with high optical transparency for visible light and low Oxygen Transmission Rate (OTR). The optical transmittance of AlO$_{x}$ thin film deposited on polycarbonate (PC) showed the same value of bare PC.bare PC.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.2
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• pp.126-129
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• 1999

PbTio3 is a promising material with perovskite structure for pyroelectric sensor applications with its superior pyroelectric properties, low dielectric constants, and low piezoelectric constants. Growth of pyroelectric thin films in general, needs relatively higher temperatures than those of conventional Si semiconductor processing However, low growth temperature is advantageous for the device integration. We report the low temperature (350$^{\circ}C$) growth of PbTio3 thin films by 3-gun DC magnetron reactive sputtering. The effects of substrate temperature, Pb-flux, and total pressure on crystalinity and preferred orientation of PbTio3 thin films are reported.