• Environmental Engineering Research
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• v.13 no.3
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• pp.155-161
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• 2008

This study examined effects of the fermented leachate of food waste (FLFW) on nitrogen and phosphorous removal for domestic wastewater containing a low carbon-to-nitrogen (C/N) ratio in sequencing batch reactor (SBR). When the FLFW was not supplied in the process, release of phosphorus and excessive intake was not observed at both anaerobic and aerobic stages. On the other hand, when the FLFW was gradually added, active release of phosphorus and intake of phosphorus was noticed at an anaerobic stage and aerobic stage, respectively, resulting in improved phosphorus removal efficiency. The removal efficiency of nitrogen and phosphorus was increased from 75% and 37% (R-1, control test) to 97% and 80% (R-4, the highest substrate ratio test), respectively. In addition, although activity of the nitrogen oxidizing microorganisms was reduced when the reaction temperature was decreased to $10^{\circ}C$, the phosphorus removal efficiency was shown to increase with the addition of FLFW, indicating an independence from temperature. Overall, this study suggests that an efficient nutrients removal process can be successfully employed into a SBR when the FLFW is added to a wastewater which has a low C/N ratio.

• Journal of the Korean Ceramic Society
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• v.52 no.3
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• pp.209-214
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• 2015

Silicon nitride films were deposited at $100^{\circ}C$ by using the catalytic chemical vapor deposition technique. The source gas mixing ratio, $R_N=[NH_3]/[SiH_4]$, was varied from 10 to 30, and the hydrogen dilution ratio, $R_H=[H_2]/[SiH_4]$, was varied from 20 to 100. The breakdown field strength reached a maximum value at $R_N=20$ and $R_H=20$, whereas the resistivity decreased in the same sample. The relative permittivity had a positive correlation with the breakdown field strength. The capacitance-voltage threshold curve showed an asymmetric hysteresis loop, which became more squared as $R_H$ increased. The width of the hysteresis window showed a negative correlation with the slope of the transition region, implying that the combined effect of $R_N$ and $R_H$ overides the interface defects while creating charge storage sites in the bulk region.

• The Journal of the Convergence on Culture Technology
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• v.9 no.5
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• pp.753-760
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• 2023

In this study, quality improvement of beef was attempted according to the low temperature treatment and aging period of grade 1 compared to grade 1⁺⁺ beef. The fat content and shear force of beef grade 1⁺⁺ were 13.03% and 114.26N, but beef grade 1 was 3.21% and 149.67N. Meanwhile, after low-temperature treatment of grade 1 beef at -26℃ for 12 hours and low-temperature aging at 0 ℃ for 14 days, the shear force was greatly reduced to 87.85N, improving overall preference, softness, dripping gravy, flavor, and chewing texture. The essential free amino acid content was as low as 22.17mg/100g in grade 1⁺⁺ beef, but the contents were high at 41.31~45.11mg/100g in three samples of grade 1, and there was no change in content according to cold treatment conditions. As a specific component of beef, Taurine was 30.94~34.41mg/100g, and the difference in content was small according to beef grade, but Anserine and Creatine were low at 19.68mg/100g and 70.01mg/100g in beef grade 1⁺⁺ and high at 26.38~31.23mg/100g and 154.09~167.26mg/10g in beef grade 1. The content ratio of oleic acid (c18:1)/stearic acid (c18:0) as an monounsaturated fatty acid/saturated fatty acid ratio was low at 5.29 for grade 1⁺⁺ beef, but high at 6.13~6.78 for grade 1 beef. In addition, there was no trend in the content ratio of these fatty acids according to the low-temperature treatment conditions and aging period in beef grade 1. As a result of this study, it was possible to improve the quality of beef grade 1 by low-temperature treatment at -26 ℃ for 12 hours and then aging at 0 ℃ for 14 days.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-film for high precision resistors, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16 %)$N_2$). Structural properties studied using X-ray diffraction(XRD) indicate the presence of TaN, $Ta_3N_5$ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % $N_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho=305.7{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-36 $ppm/^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-(ibm for high precision resistors, which were deposited oni substrate by DC reactive magnetorn sputtering in an argon-nitrogen atmosphere(Ar-(4∼16%)N$_2$). Sturcutural properties sutided using X-ray diffraction (XRD) indicate the presence of TaN, Ta$_3$N$\sub$5/ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % N$_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho$=305.7 ${\mu}$Ωcm, a low temperature coefficient of resistance, TCR=-36 ppm/$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.97-100
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• 2001

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16%)$N_2$). These films were annealed for 1 hour in $2{\times}10^{-6}$ Torr vaccum furnace range $500\sim1000^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition($900^{\circ}C$, 1 hr.) in 8% $N_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, $\rho=768.93$ ${\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12.

• Polymer(Korea)
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• v.30 no.3
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• pp.253-258
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• 2006

We have fabricated vortical type organic thin film transistors (OTFTs) consisting of ITO/n type active material/Al gate/n type active material/Al using F16CuPc, NTCDA, PTCDA and PTCDI C-8. The effect of mobility of n type active materials and thin film thickness on current-voltage (I-V) characteristics and on/off ratios were investigated. The vortical type organic transistor using PTCDI C-8 exhibited low operation voltage and high on-off ratio. In addition, we have investigated the feasibility of application in organic light emitting transistor using light emitting polymer. Especially, the light emitting transistor consisting of ITO/PEDOT-PSS/P3HT/F16CuPc/Al gate/F16CuPc/Al showed the maximum quantum efficiency of 0.054.

• Journal of the Korean Chemical Society
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• v.47 no.1
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• pp.59-66
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• 2003

The comb-type grafted polymer hydrogels, which composed of N-isopropylacrylamide monomer and oligo(N-isopropylacrylamide-co-tert-butylacrylamide) [oligo(NIPAAm-co-t-BAM)], were synthesized by redox polymerization in 5~10% methanol aqueous solution using ammonium peroxodisulfate (APS) at 4 oC for 24h. The lower critical solution temperatures (LCSTs) of the comb-type grafted hydrogels were decreased with increase of t-BAM content in the grafted copolymer. We observed the effect of crosslinker and concentration of oligo(NIPAAm-co-t-BAM) on the shrinking/swelling ratio of hydrogels. Changes of shrinking/swelling ratio were decreased with increase of concentration of crosslinker. The increase of grafted oligo(NIPAAm-co-t-BAM) in the hydrogel shows an fast changes of shrinking/ swelling rate. The comb-type grafted hydrogels are expected to be valuable for the sensing materials of time-temperature labels(TTLs).

• Korean Journal of Microbiology
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• v.39 no.1
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• pp.21-26
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• 2003

Ninety strains of photosynthetic bacteria were isolated from a local stream at Kyonggi-do, Korea and were further screened. Using these isolated strains, experiments were performed under various light and oxygen conditions in order to select strains with high nitrogen $(NH_3-N,\; NO_3^--N)$ removal efficiencies. Results showed that all the strains screened removed $NH_3-N$, the light had no effect on nitrogen removal, and the nitrogen removal rate was higher aerobically than anaerobically. The removal of $NO_3^--N$ was showed up to 35.3% in some specific strains. Results of batch experiments using Rhodocyclus gelatinosus, an isolated strain with a superior removal rate of $NH_3--N$ and $NH_3-N$, under the anaerobic condition, showed that the removal rate of organics and $NH_3-N$ was the highest (98.2 and 89.0%, respectively) at the CODcr (mg/L)/biomass (mg/L) ratio of 0.2, and the $NH_3-N$ concentration did not increase with the decreasing $NH_3-N$ concentration. Experimental results from various C/N ratios confirmed that the effective removal rate (75.8%) of $NH_3-N$ occurred even at the low (5:1) C/N ratio as well as high ratios, and the simulataneous removal of $NO_3^--N$ (96.0%).

• Applied Science and Convergence Technology
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• v.26 no.4
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• pp.79-85
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• 2017

The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.