• 접착 및 계면
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• 제22권4호
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• pp.144-152
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• 2021

유기반도체와 게이트 절연체 간 계면전하이동을 이해하는 것은 고성능 유기메모리, 고안정성 유기전계효과 트랜지스터 (이하 유기트랜지스터) 개발에 기여할 수 있다. 본 연구에서는 계면 간 전하이동의 특이거동, 즉 홀전하가 유기반도체에서 고분자절연체로 이동되어 편재화되는 것이 편재화 준위간의 커플링에 의해 비선형적으로 가속화될 수 있음을 최초로 밝혀내었다. 이의 규명을 위해 rubrene 단결정과 Mylar 절연체를 기반으로 한 유기트랜지스터를 vacuum lamination 공정으로 제작하여 반도체-절연체 계면의 반복적인 전사와 박리에도 안정적인 소자를 개발하였다. Rubrene 단결정과 Mylar film의 표면을 각각 광유도 산소 확산법과 UV-오존 처리를 통해 결함을 생성시켰다. 그 결과, 계면 간 전하이동과 이에 의한 바이어스 스트레스 효과가 rubrene과 Mylar가 가진 편재화 준위 간 커플링에 의해 비선형적으로 급격하게 가속화되었음을 관측하였다. 특히, rubrene 단결정에 있는 적은 밀도의 편재화 준위가 계면 간 전하이동을 촉진하는데 가교역할을 함을 밝혀내었다

• 전자공학회논문지A
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• 제32A권12호
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• pp.122-129
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• 1995

The most important feature of a-Si TFT is dense localized states such as dangling bonds which exist in tis bandgap. Electrons trapped by localized states dominate the potential distribution in the active a-Si region ,and influence the performance of a-Si TFT. In this paper, we describe the electrical characteristics of a-Si TFT with respect to trap distribution within bandgap, electron mobility and interface states using 2-Dimensional device simulator and compare the result of simulation with measurements. Using the mixed-mode simulator, we can predict the potential variation of pixel which causes residual image problem during the turn-off of a-Si TFT driving circuit. Therefore it is possible to consider trade-off between potential variation of pixel and turn-on current of a-Si TFT for the optimized driving circuit.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.52-57
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• 1995

An accurate and efficient single-integral semi-numerical model is developed and applied to analyse effects of localized electronic states in the mobility gap on the drain-current versus gale-voltage characteristics of hydrogenated amorphous field-effect transistors. It is shown that the low-density deep-gap states distributed in the midgap also sensitively and largely influence the device electronic performance as well as well as the large-density tail states distributed near the conduction band edge.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1994년도 제7회 학술발표회 및 한·일 CVD 심포지움 논문개요집
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• pp.141-141
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• 1994

• Structural Engineering and Mechanics
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• 제85권5호
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• pp.665-677
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• 2023

In the present study, the limit point buckling and postbuckling behaviors of sinusoidal, shallow arches with pinned supports subjected to localized sinusoidal loading, based on the Euler-Bernoulli beam theory, are numerically analyzed. There are some studies on the buckling of sinusoidal shallow arches under the effect of sinusoidal loading. However, in these studies, the sinusoidal loading acts along the horizontal projection of the entire shallow arch. No study has been found in the relevant literature pertaining to the stability of the shallow arches subjected to various lengths of sinusoidal loading. Therefore, the purpose of this paper is to contribute to the literature by examining the effect of the length of the localized sinusoidal loading and the initial rise of the shallow arch on the limit point buckling and postbuckling behaviors. Equilibrium paths corresponding to certain values of the length of the localized sinusoidal loading and various values of the initial rise parameter are presented. It has been observed that the length of the sinusoidal loading and the initial rise parameter affects the transition from no buckling to limit point instability remarkably. The deformed configurations of the sinusoidal shallow arch under localized loading regarding buckling and postbuckling states are illustrated, as well. The effects of the length of the localized sinusoidal loading on the internal forces of the shallow arch are investigated during various stages of the loading.

• Structural Engineering and Mechanics
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• 제16권2호
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• pp.141-152
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• 2003

Characteristics of solutions of softening plasticity are discussed in this article. The localized and non-localized solutions are obtained for a three-bar truss and their stability is evaluated with the aid of the second-order work. Beyond the bifurcation point, the single stable loading path splits into several post-bifurcation paths and the second-order work exhibits several competing minima. Among the multiple post-bifurcation equilibrium states, the localized solutions correspond to the minimum points of the second-order work, while the non-localized solutions correspond to the saddles and local maximum points. To determine the real post-bifurcation path, it is proposed that the structure should follow the path corresponding to the absolute minimum point of the second-order work. The proposal is further proved equivalent to Bazant's path criterion derived on a thermodynamics basis.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1016-1018
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• 1995

In this paper, we studied the electrical and the microwave properties of the amorphous $As_{10}Ge_{15}Te_{75}$ thin film. The electrical properties of a-$As_{10}Ge_{15}Te_{75}$ thin film were examined d.c. and a.c. bias with annealing condition. As the result of the electrical properties, we observed the physical characteristics of a-$As_{10}Ge_{15}Te_{75}$ thin film such as the density of defect states, characteristic relaxation time, localized density of states, and localized wave function by using CBH and QMT model. We also examined the microwave conduction properties before and after d.e. switching.

• 대한전기학회논문지
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• 제44권7호
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• pp.901-907
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• 1995

The switching characteristics of As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film were investigated under d.c. bias. And the frequency dependence of the conductivity was analysed with regard to the temperature dependence, in order to find the physical properties of the As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film ; a characteristic relaxation time (.tau.$_{0}$ ), the spatial density of defect states (N), and the localized wavefunction (.alpha.$^{-1}$ ). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively. The threshold voltage is increased as the thickness and the electrode distance is increased, while the threshold voltage is decreased in proportion to the increased annealing time and temperature.

• Current Optics and Photonics
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• 제5권1호
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• pp.72-76
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• 2021

The polarized micro-photoluminescence spectrum was analyzed to investigate the anisotropic localized states in a single GaAs quantum ring. An energy difference of ~0.1 meV was observed from the perpendicularly polarized spectrum measured by a pair of linear analyzers. Spectral dependence of the polarized emission was also characterized in terms of rotation and ellipticity angles using four Stokes parameters. While the rotation angle indicates the symmetric axis of an anisotropic quantum ring with a small variation (± 2°), the ellipticity angle varies from 7.4° down to -2.5°. We conclude that optical anisotropy and birefringence are induced by the crescent-like lateral shape of localized states.

• 대한전자공학회논문지TC
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• 제40권12호
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• pp.38-45
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• 2003

최근에 글로벌 QoS 라우팅방식의 약점을 개선하려는 노력으로 로컬 QoS 라우팅 방식이 제시되었다. 글로벌 라우팅과는 다르게 로컬 QoS 라우팅에서는 라우터간의 상태교환을 수행하지 않고 virtual capacity를 사용하여 라우터가 독자적으로 라우팅을 수행한다. 로컬 QoS 라우팅에서는 소스와 목적간의 경로가 효과적으로 선택되어야만 좋은 성능을 보장받을 수 있다. 본 논문에서는 효과적인 경로 선택을 위하여 몇몇의 휴리스틱을 제시하고 이를 활용한 경로 선택 알고리즘을 제안하였다. 제안된 알고리즘은 시뮬레이션과 함께 분석되었으며 경로선정방식에 따라 로컬 QoS 라우팅의 성능이 매우 큰 영향을 받는다는 것을 확인하였다.