• Journal of Adhesion and Interface
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• v.22 no.4
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• pp.144-152
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• 2021

Understanding charge transfer across the interface between organic semiconductor and gate insulator gives insight into the development of high-performance organic memory as well as highly stable organic field-effect transistors (OFETs). In this work, we firstly unveil a novel interfacial charge transfer mechanism, in which hole transfer from organic semiconductor to polymer insulator was nonlinearly boosted by localized states coupling. For this, OFETs based on rubrene single crystal semiconductor and Mylar gate insulator were fabricated via vacuum lamination, which allows stable repetition of lamination and delamination between semiconductor and gate insulator. The surfaces of rubrene single crystal and Mylar film were selectively degraded by photo-induced oxygen diffusion and UV-ozone treatment, respectively. Consequently, we found that the interfacial charge transfer and resultant bias-stress effect were nonlinearly boosted by coupling between localized states in rubrene and Mylar. In particular, the small number of localized states in rubrene single crystal provided fluent pathway for interfacial charge transport.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.122-129
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• 1995

The most important feature of a-Si TFT is dense localized states such as dangling bonds which exist in tis bandgap. Electrons trapped by localized states dominate the potential distribution in the active a-Si region ,and influence the performance of a-Si TFT. In this paper, we describe the electrical characteristics of a-Si TFT with respect to trap distribution within bandgap, electron mobility and interface states using 2-Dimensional device simulator and compare the result of simulation with measurements. Using the mixed-mode simulator, we can predict the potential variation of pixel which causes residual image problem during the turn-off of a-Si TFT driving circuit. Therefore it is possible to consider trade-off between potential variation of pixel and turn-on current of a-Si TFT for the optimized driving circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.52-57
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• 1995

An accurate and efficient single-integral semi-numerical model is developed and applied to analyse effects of localized electronic states in the mobility gap on the drain-current versus gale-voltage characteristics of hydrogenated amorphous field-effect transistors. It is shown that the low-density deep-gap states distributed in the midgap also sensitively and largely influence the device electronic performance as well as well as the large-density tail states distributed near the conduction band edge.

• Proceedings of the Korean Vacuum Society Conference
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• 1994.06a
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• pp.141-141
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• 1994

• Structural Engineering and Mechanics
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• v.85 no.5
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• pp.665-677
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• 2023

In the present study, the limit point buckling and postbuckling behaviors of sinusoidal, shallow arches with pinned supports subjected to localized sinusoidal loading, based on the Euler-Bernoulli beam theory, are numerically analyzed. There are some studies on the buckling of sinusoidal shallow arches under the effect of sinusoidal loading. However, in these studies, the sinusoidal loading acts along the horizontal projection of the entire shallow arch. No study has been found in the relevant literature pertaining to the stability of the shallow arches subjected to various lengths of sinusoidal loading. Therefore, the purpose of this paper is to contribute to the literature by examining the effect of the length of the localized sinusoidal loading and the initial rise of the shallow arch on the limit point buckling and postbuckling behaviors. Equilibrium paths corresponding to certain values of the length of the localized sinusoidal loading and various values of the initial rise parameter are presented. It has been observed that the length of the sinusoidal loading and the initial rise parameter affects the transition from no buckling to limit point instability remarkably. The deformed configurations of the sinusoidal shallow arch under localized loading regarding buckling and postbuckling states are illustrated, as well. The effects of the length of the localized sinusoidal loading on the internal forces of the shallow arch are investigated during various stages of the loading.

• Structural Engineering and Mechanics
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• v.16 no.2
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• pp.141-152
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• 2003

Characteristics of solutions of softening plasticity are discussed in this article. The localized and non-localized solutions are obtained for a three-bar truss and their stability is evaluated with the aid of the second-order work. Beyond the bifurcation point, the single stable loading path splits into several post-bifurcation paths and the second-order work exhibits several competing minima. Among the multiple post-bifurcation equilibrium states, the localized solutions correspond to the minimum points of the second-order work, while the non-localized solutions correspond to the saddles and local maximum points. To determine the real post-bifurcation path, it is proposed that the structure should follow the path corresponding to the absolute minimum point of the second-order work. The proposal is further proved equivalent to Bazant's path criterion derived on a thermodynamics basis.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1016-1018
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• 1995

In this paper, we studied the electrical and the microwave properties of the amorphous $As_{10}Ge_{15}Te_{75}$ thin film. The electrical properties of a-$As_{10}Ge_{15}Te_{75}$ thin film were examined d.c. and a.c. bias with annealing condition. As the result of the electrical properties, we observed the physical characteristics of a-$As_{10}Ge_{15}Te_{75}$ thin film such as the density of defect states, characteristic relaxation time, localized density of states, and localized wave function by using CBH and QMT model. We also examined the microwave conduction properties before and after d.e. switching.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.7
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• pp.901-907
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• 1995

The switching characteristics of As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film were investigated under d.c. bias. And the frequency dependence of the conductivity was analysed with regard to the temperature dependence, in order to find the physical properties of the As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film ; a characteristic relaxation time (.tau.$_{0}$ ), the spatial density of defect states (N), and the localized wavefunction (.alpha.$^{-1}$ ). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively. The threshold voltage is increased as the thickness and the electrode distance is increased, while the threshold voltage is decreased in proportion to the increased annealing time and temperature.

• Current Optics and Photonics
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• v.5 no.1
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• pp.72-76
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• 2021

The polarized micro-photoluminescence spectrum was analyzed to investigate the anisotropic localized states in a single GaAs quantum ring. An energy difference of ~0.1 meV was observed from the perpendicularly polarized spectrum measured by a pair of linear analyzers. Spectral dependence of the polarized emission was also characterized in terms of rotation and ellipticity angles using four Stokes parameters. While the rotation angle indicates the symmetric axis of an anisotropic quantum ring with a small variation (± 2°), the ellipticity angle varies from 7.4° down to -2.5°. We conclude that optical anisotropy and birefringence are induced by the crescent-like lateral shape of localized states.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.12
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• pp.38-45
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• 2003

Recently, localized QoS routing scheme was recently proposed for overcome drawbacks of global state QoS routing schemes. Localized QoS routing dose not exchange QoS states among routers, but use virtual capacity based routing scheme instead. In localized QoS routing, to archive good performance, a set of candidate paths must be selected between the source and the destination effectively. In this paper we propose a few heuristics for effective path selection and develop path selection algorithms based on the heuristics. More detail analysis of the proposed algorithm is presented with simulation results which demonstrate that the path selection method can very affect the performance of localized QoS routing.