• 제어로봇시스템학회논문지
• /
• 제10권7호
• /
• pp.604-610
• /
• 2004

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of transferred nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a $5\times5\times0.09$ in. quartz stamp whose critical dimension is 377 nm was fabricated using the etching process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply the fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer. Experiments have shown that the multi-dispensing method can enable UV-NIL using a large-area stamp.

• 제어로봇시스템학회:학술대회논문집
• /
• 제어로봇시스템학회 2001년도 ICCAS
• /
• pp.37.3-37
• /
• 2001

The quality of a precision product, in genera, relies on the accuracy and precision of its manufacturing and inspection process. In many cases, the level of precision in the manufacturing and inspection system is also dependent on the positioning capability of tool with respect to the workpiece in the process. Recently the positioning accuracy level employed for some of precision product has reached the level of submicron and long range of motion is required. For example, for 1GDRM lithography, 20nm accuracy and 300nm stroke needs. This paper refers to the lithography stage especially fine stage. In this study, for long stroke and high accuracy, the dual servo system is proposed. For the coarse actuator, LDM(Linear DC Noter) is used and for fine or VCM is used ...

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2003년도 춘계학술대회 논문집
• /
• pp.199-202
• /
• 2003

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a 5$\times$5$\times$0.09 in. quartz stamp whose critical dimension is 377 nm was fabricated using the etch process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply tile fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer Experiments have shown that the multi-dispensing method can enable UV-NIL rising a large-area stamp.

• 전자공학회논문지D
• /
• 제34D권12호
• /
• pp.62-67
• /
• 1997

The optical lithography wit an ArF excimer laser as a light source is expected to be used in the mass production of giga-bit DRAMs which require less than 0.2.mu.m minimum feature size. In this case, the distortion of a patterned image becomes very severe, since the lithography porcess is performed at the resolution limit. Traditionally, the photomask pattern was designed and revised with trial-and-error methods, such as repeated execution of process simulators or actual process experiments which require time and effort. Ths paper describes a program which automatically finds an optimal mask pattern. The program divides the mask plane into cells with same sizes, chooses a cell randomly, changes the transparent/opaque property of the cell, and eventually genrates a mask pattern which produces required image pattern. The program was applied to real DRAM cell patterns to produce mask patterns which genertes image patterns closer to object images than original mask patterns.

• 반도체디스플레이기술학회지
• /
• 제10권4호
• /
• pp.89-94
• /
• 2011

In recent years there have been considerable attentions on nanoimprint lithography (NIL) by the display device and semiconductor industry due to its potential abilities that enable cost-effective and high-throughput nanofabrication. A major disadvantage of thermal NIL is the thermal cycle, that is, heating over glass transition temperature and then cooling below it, which requires a significant amount of processing time and limits the throughput. One of the methods to overcome this disadvantage is to improve the cooling performance in NIL process. In this paper, a numerical analysis model of cooling system in thermal NIL was development by CAD/CAE program and the performance of the cooling system was analyzed by the model. The calculated temperatures of nanoimprint device were verified by the measurements. By using the analysis model, the case that the cooling material is replaced by liquid nitrogen is investigated.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2006년도 하계종합학술대회
• /
• pp.555-556
• /
• 2006

In this paper, we have proposed a novel process using two-step electron beam lithography to fabricate 20 nm T-gates for high performance MODFETs. Two-step lithography reduces electron forward scattering by defining the foot on a thin (100 nm) bottom-layer of polymethyl methacrylate (PMMA) at the second step, the T-gate head having been developed at the first step. Adopting a low temperature development technique for the second step reduces the detrimental effect of head exposure on foot definition. We have shown that 20 nm T-gate can be patterned with this process.

• 한국정밀공학회지
• /
• 제19권12호
• /
• pp.163-170
• /
• 2002

The quality of a precision product, in general, relies on the accuracy and precision of its manufacturing and inspection process. In many cases, the level of precision in the manufacturing and inspection system is also dependent on the positioning capability of tool with respect to the work piece in the process. Recently the positioning accuracy level has reached to the level of submicron and long range of motion is required. For example, for 1 GDARM lithography, 20nm accuracy and 300mm stroke needs. This paper refers to the lithography stage especially to fine stage. In this study, for long stroke and high accuracy, the dual servo system is proposed. For the coarse actuator, LDM (Linear DC Motor) is used and for fine one VCM is used. In this study, we propose the new structure of VCM for the fine actuator. It is 3 axis precision positioning stage for an aligner system. After we perform the optimal design of the stage to obtain the maximum force, which is related to the acceleration of the stage to accomplish throughput of product. And we controlled this fine stage with TDC. So we obtained 50nm resolution. So later more works will be done to obtain better accuracy.

• 제어로봇시스템학회논문지
• /
• 제14권5호
• /
• pp.420-425
• /
• 2008

PMMA light guiding plate with nano-sized pattern was fabricated using anodized aluminum oxide membrane as a template for nano imprint lithography. Nano-sized pore arrays were prepared by the self-organization processes of the anodic oxidation using the aluminum plate with 99.999% purity. Since the aluminum plate has a rough surface, the aluminum plate with thickness of 1mm was anodized after the pre-treatments of chemical polishing, and electrochemical polishing. The surface morphology of the alumina obtained by the first anodization process was controlled by the concentration of electrochemical solution during the first anodization. The surface morphology of the alumina was also changed according to temperature of the solution during chemical polishing performed after first anodization. The pore widening process was employed for obtaining the one-channel with flat surface and height of the channel because the pores of the alumina membrane prepared by the fixed voltage method shows the structure of two-channel with rough surface. It is shown from SPM results that the nano-sized pattern on PMMA light guiding plate fabricated by nano imprint lithography method was well transferred from that of anodized aluminum oxide template.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2008년도 추계학술대회A
• /
• pp.1939-1943
• /
• 2008

Deformation of a mold is measured and analyzed in alignment and curing processes of UV-Imprint Lithography. We are focused on mold deformation caused by a UV resin, which is laminated between a mold and a target glass-panel. The UV resin is viscous in case of liquid state, and the resin will be solidified when being exposed by the ultra-violet light. The viscosity of the resin causes shear force on the mold during the alignment process. Moreover, the shrinkage during phase change from liquid to solid may cause residual stress on the mold. The experiments for measuring temperature and strain are made during alignment and curing process. Strain-gages and thermocouples are used for measuring the strain and variation of temperature on several points of the mold, respectively. The deformation of mold is also simulated and analyzed. The simulation results are compared with the experiments. Finally, sources of alignment errors in large area UV-nanoimprint lithography are discussed.

• 한국재료학회지
• /
• 제26권11호
• /
• pp.635-643
• /
• 2016

Graphene has shown exceptional properties for high performance devices due to its high carrier mobility. Of particular interest is the potential use of graphene nanoribbons as field-effect transistors. Herein, we introduce a facile approach to the fabrication of graphene nanoribbon (GNR) arrays with ~200 nm width using nanoimprint lithography (NIL), which is a simple and robust method for patterning with high fidelity over a large area. To realize a 2D material-based device, we integrated the graphene nanoribbon arrays in field effect transistors (GNR-FETs) using conventional lithography and metallization on highly-doped $Si/SiO_2$ substrate. Consequently, we observed an enhancement of the performance of the GNR-transistors compared to that of the micro-ribbon graphene transistors. Besides this, using a transfer printing process on a flexible polymeric substrate, we demonstrated graphene-silicon junction structures that use CVD grown graphene as flexible electrodes for Si based transistors.