• 제목/요약/키워드: lithography process

검색결과 550건 처리시간 0.024초

마스크 뒷면에 동심원 격자를 사용한 변형조명 방법 (Modified Illumination with a Concentric Circular Grating at the Backside of a Photomask)

  • 오용호;고춘수;임성우;이재철
    • 한국전기전자재료학회논문지
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    • 제18권3호
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    • pp.212-215
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    • 2005
  • Modified illumination techniques have been used to enhance the resolution of the sub-wavelength lithography. But, since they shield the central part of incident light, the light efficiency is seriously degraded, which in turn reduces the throughput of a lithography process. In this research, we introduced an annular illumination structure that enhances the light efficiency with a concentric circular grating at the backside of a photomask. The efficiency of the structure was theoretically analyzed.

Material Design for the Fabrication of Barrier Ribs with High Aspect Ratio of Plasma Display Panel by X-ray Lithography

  • Ryu, Seung-Min;Yang, Dong-Yol;So, Jae-Yong;Park, Lee-Soon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.989-992
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    • 2008
  • X-ray lithography is one of the most powerful processes in the fabrication of nano/micro structures with a high aspect ratio. This process enables the fabrication of ultra-thin barrier ribs for PDP using X-ray sensitive paste. In this paper, organic material including photo-monomers, photo-oligomers, binder polymer and additives as well as inorganic powders with different size were optimized to fabricate high aspect ratio barrier rib pattern for PDP.

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열 나노임프린트 공정에서 가압조건이 패턴전사에 미치는 영향 (Effects of Pressurization Conditions on the Pattern Transfer in the Thermal Nanoimprint Lithography)

  • 이우영;이기연;김국원
    • 반도체디스플레이기술학회지
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    • 제12권4호
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    • pp.15-20
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    • 2013
  • Nanoimprint lithography (NIL) is the next generation photolithography process in which the photoresist is dispensed onto the substrate in its liquid form and then imprinted and cured into a desired pattern instead of using traditional optical system. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. In this paper, a pressure vessel type imprinting system was used to imprint patterns with two type pressure values (25 bar, 30 bar) and two type pressure keeping times (5 min, 10 min). The height of transferred pattern and the thickness of residual layer were measured and effects of pressurization conditions - pressure and pressure keeping time - on the pattern transfer in thermal NIL were investigated.

Micro-Lithography를 위한 4 구면경계의 설계 및 수차해석 (Optical CAD and Analyses of Four Spherical Mirror System for Micro-Lithography)

  • 조영민
    • 한국광학회:학술대회논문집
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    • 한국광학회 1991년도 제6회 파동 및 레이저 학술발표회 Prodeedings of 6th Conference on Waves and Lasers
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    • pp.88-89
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    • 1991
  • For the micro-lithography using a KrF excimer laser beam(λ=0.248${\mu}{\textrm}{m}$) a mirror system consisting of four spherical surfaces with reduction magnification 5$\times$ is designed. Initially the aplanat condition of the mirror system is considered. And for the further improved performance of the system the distortion free condition and flat field condition within Seidel 3rd order aberrations are added to the above condition. During the process of designing the computer-aided optimization technique is extensively employed. The spherical aberration, coma, field curvature and distortion of the optimized four-spherical mirror system are removed to the diffraction limit, and residual astigmatism and off-axial vignetting are not corrected enough.

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나노임프린트 리소그래피를 이용한 곡면 기판 위에 정렬된 나노 볼 패턴 형성에 관한 연구 (Fabrication of High Ordered Nano-sphere Array on Curved Substrate by Nanoimprint Lithography)

  • 홍성훈;배병주;곽신웅;이헌
    • 한국표면공학회지
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    • 제41권6호
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    • pp.331-334
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    • 2008
  • The replica of highly ordered nano-sphere array patterns were fabricated using hot embossing method. First, silica nano-sphere array on Si substrate was transferred to PVC film at $130^{\circ}C$ and 7 bar using hot embossing process. Then, silica nano-sphere array on PVC template was removed by soaking the PVC film in buffered oxide etcher. In order to form anti-stiction layer, the PVC template was coated with silicon dioxide layer and self-assembled monolayer. Through UV nanoimprint lithography with the fabricated flexible PVC template, highly ordered nano-sphere array pattern was imprinted on curved substrates with high fidelity.

무습수 평판인쇄의 온도 의존성에 관한 연구 (A Study on the Temperature Dependence of Waterless Lithography)

  • 신춘범;강상훈;이상남
    • 한국인쇄학회지
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    • 제19권1호
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    • pp.42-54
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    • 2001
  • The combination of a silicone surfaced plate and high viscosity ink produced a waterless printing system that worked well, but had limitation. The limitation was that this system was restricted to relatively short run lengths. In the waterless printing process, the press tended to heat up rapidly. Heat in turn, broke down the resins in the inks, causing them to become more fluid. When the ink is heated, the viscosity will drop, the ink will become too liquid and the plate will no longer be able to resist it. The ink will adhere to the non-print portions of the plate, and will print as a very fine mist or speckle pattern in the non-image area. On the other hand, when the ink gets too cold, viscosity will increase until ink transfer is impeded. This study carried otu to investigate the effect of temperature variations of the inks on the print quality in waterless lithography and to examine the adaptability of waterless lithography to conventional offset press without cooling system.

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Roll-to-Roll UV 나노 임프린팅 리소그래피에 의한 대면적 17인치의 나노 와이어 그리드의 제작 (Fabrication of a 17inch Area Size Nano-Wire Grid using Roll-to-Roll UV Nano-Imprinting Lithography)

  • 허종욱;남수용
    • 한국인쇄학회지
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    • 제29권3호
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    • pp.17-30
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    • 2011
  • The polarizer is an important optical element used in a variety of applications. Nano-wire grid polarizers in the form of sub-wavelength metallic gratings are an attractive alternative to conventional polarizers, because they provide high extinction ratio. This study has been carried out to fabrication of the 17inch area size nano-wire grid polarizer(NWGP) The master for NWGPs with a pitch of 200nm and the area size $730mm{\times}450mm$ were fabricated using laser interference lithography and aluminum sputtering and wet etching. And The NWGP fabrication process was using by the Roll to-Roll UV imprinting and was applied to flexible PET film. The results were a transmission of light (Tp) 46.7%, reflectance (Rs) 40.1% and Extinction ratio of above 16 for the visible light range.

Mask R-CNN을 활용한 반도체 공정 검사 (Semiconductor Process Inspection Using Mask R-CNN)

  • 한정희;홍성수
    • 반도체디스플레이기술학회지
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    • 제19권3호
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    • pp.12-18
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    • 2020
  • In semiconductor manufacturing, defect detection is critical to maintain high yield. Currently, computer vision systems used in semiconductor photo lithography still have adopt to digital image processing algorithm, which often occur inspection faults due to sensitivity to external environment. Thus, we intend to handle this problem by means of using Mask R-CNN instead of digital image processing algorithm. Additionally, Mask R-CNN can be trained with image dataset pre-processed by means of the specific designed digital image filter to extract the enhanced feature map of Convolutional Neural Network (CNN). Our approach converged advantage of digital image processing and instance segmentation with deep learning yields more efficient semiconductor photo lithography inspection system than conventional system.

Attenuated Phase Shift Mask에 광 근접 효과 보정을 적용한 고립 패턴의 해상 한계 분석 (Resolution Limit Analysis of Isolated Patterns Using Optical Proximity Correction Method with Attenuated Phase Shift Mask)

  • 김종선;오용호;임성우;고춘수;이재철
    • 한국전기전자재료학회논문지
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    • 제13권11호
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    • pp.901-907
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    • 2000
  • As the minimum feature size for making ULSI approaches the wavelength of light source in optical lithography, the aerial image is so hardly distorted because of the optical proximity effect that the accurate mask image reconstruction on wafer surface is almost impossible. We applied the Optical Proximity Correction(OPC) on isolated patterns assuming Attenuated Phase Shift Mask(APSM) as well as binary mask, to correct the widening of isolated patterns. In this study, we found that applying OPC to APSM shows much better improvement not only in enhancing the resolution and fidelity of t도 images but also in enhancing the process margin than applying OPC to the binary mask. Also, we propose the OPC method of APSM for isolated patterns, the size of which is less than the wavelength of the ArF excimer laser. Finally, we predicted the resolution limit of optical lithography through the aerial image simulation.

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내장형 수동소자의 제조를 위한 포토 이미징 후막리소그라피 기술 (Photo-imageable Thick-Film Lithography Technology for Embedded Passives Fabrication)

  • 임종우;김효태;김종희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.303-303
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    • 2007
  • Photo-imageable thick-film lithography technology was developed for the fabrication of embedded passives such as inductors and capacitors. In this study, photo-imageable dielectric and conductor pastes have apoted a negative type. Sodalime glass wafer, alumina substrate and zero-shrinkage LTCC green tapes were used as substrates. In result, The lithographic patterns were designed as lines and spaces for conductor material, or via-holes for ceramic, LTCC, materials. The scattering and reflection of UV-beam on the substrate had negative effects on fine patterning. The patterning performance was varied with the exposing and developing process conditions, and also varied with the substrate materials. Fine resolution of less then $50/50{\mu}m$ in line and space was obtained, which is difficult in screen printing method.

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