• 제목/요약/키워드: lithium niobate on insulator

검색결과 2건 처리시간 0.017초

Fabrication of low-loss symmetrical rib waveguides based on x-cut lithium niobate on insulator for integrated quantum photonics

  • Hong-Seok Kim;Guhwan Kim;Tetiana Slusar;Jinwoo Kim;Jiho Park;Jaegyu Park;Hyeon Hwang;Woojin Noh;Hansuek Lee;Min-Kyo Seo;Kiwon Moon;Jung Jin Ju
    • ETRI Journal
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    • 제46권5호
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    • pp.783-792
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    • 2024
  • Lithium niobate on insulator (LNOI) is a promising material platform for applications in integrated quantum photonics. A low optical loss is crucial for preserving fragile quantum states. Therefore, in this study, we have fabricated LNOI rib waveguides with a low optical propagation loss of 0.16 dB/cm by optimizing the etching conditions for various parameters. The symmetry and smoothness of the waveguides on x-cut LNOI are improved by employing a shallow etching process. The proposed method is expected to facilitate the development of on-chip quantum photonic devices based on LNOI.

Heterogeneously Integrated Thin-film Lithium Niobate Electro-optic Modulator Based on Slot Structure

  • Li, Xiaowei;Xu, Yin;Huang, Dongmei;Li, Feng;Zhang, Bo;Dong, Yue;Ni, Yi
    • Current Optics and Photonics
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    • 제6권3호
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    • pp.323-331
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    • 2022
  • Electro-optic modulator (EOM) takes a vital role in connecting the electric and optical fields. Here, we present a heterogeneously integrated EOM based on the lithium niobate-on-insulator (LNOI) platform. The key modulation waveguide structure is a field-enhanced slot waveguide formed by embedding silicon nanowires in a thin-film lithium niobate (LN), which is different from the previously reported LN ridge or etchless LN waveguides. Based on such slot structure, optical mode field area is reduced and enhanced electric field in the slot region can interact well with LN material with high Electro-optic (EO) coefficient. Therefore, the improvements in both aspects have positive effects on enhancing the modulation performance. From results, the corresponding EOM by adding such modulation waveguide structure achieves better performance, where the key half-wave-voltage-length product (V𝜋L) and 3 dB EO bandwidth are 1.78 V·cm and 40 GHz under the electrode gap width of only 6 ㎛, respectively. Moreover, Lower V𝜋L can also be achieved. With these characteristics, such field-enhanced waveguide structure could further promote the development of LNOI-based EOM.