• Bulletin of the Korean Chemical Society
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• v.9 no.5
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• pp.292-295
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• 1988

Macrocyclic ligands have been studies as cation carriers in a bulk liquid membrane system. $Cu^{2+}$ has been transported using nitrogen substituted macrocycles as carriers and several transition metal ions($M^{n+}\;=\;Mn^{2+},\;Co^{2+},\;Ni^{2+},\;Cd^{2+},\;Pb^{2+}\;and\;Ag^{+}$) have been transported using $DBN_3O_2,\;DBN_2O_2,\;Me_6N_414C4$ and DA18C6 as carriers in a bulk liquid membrane system. Competitive $Cu^{2+}-M2^+$ transport studies have also been carried out for the same system. In single cation transport experiments, the best macrocyclic ligand for transport is a ligand that gives a moderately stable rather than very stable complex in the extraction. However, when both cations are present in the source phase, the cation which forms the most stable complex with carrier is favored in transport over other cations. Generally, the nitrogen substiituted macrocycles transport $Cu^{2+}$ selectively over $Mn^+$. Ligand structure, equilibrium constant (or stability constant) for complex formation, source phase pH and carrier concentration are also important parameters in transport experiments.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.362-362
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• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

• Transactions of the Korean hydrogen and new energy society
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• v.19 no.5
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• pp.386-393
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• 2008

The Sulfur-iodine(SI) thermochemical cycle is one of the most promising methods for massive hydrogen production. For the purpose of continuous operation of SI cycle, phase separation characteristics into two liquid phases ($H_2SO_4$-rich phase and $HI_x$-rich phase) were directly investigated via Bunsen reaction. The experiments for Bunsen reaction were carried out in the temperature range, from 298 to 333 K, and in the $I_2/H_2O$ molar ratio of $0.109{\sim}0.297$ under a continuous flow of $SO_2$ gas. As the results, solubility of $SO_2$, decreased with increasing the temperature, had considerable influence on the global composition in the Bunsen reaction system. The amounts of impurity in each phase(HI and $I_2$ in $H_2SO_4$-rich phase and $H_2SO_4$ in $HI_x$-rich phase) were decreased with increasing $H_2SO_4$ molar ratio and temperature. To control the amounts of impurity in $HI_x$-rich phase, temperature is a factor more important than $I_2/H2_O$ molar ratio. On the other hand, the affinity between $HI_x$ and $H_2O$ was increased with increasing $I_2/H2_O$molar ratio.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 2000.06a
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• pp.1-33
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• 2000

Silicon carbide ceramics with sintering additives from the system AlN-Y$_2$O$_3$ can be gas-pressure sintered to theoretical density. While commonly a combination of sesquioxides is used such as Al$_2$O$_3$-Y$_2$O$_3$, the oxynitrid additives offer the advantage that only a nitrogen atmosphere is require instead of a powder. By starting form a mixture of ${\beta}$-SiC and ${\alpha}$-SiC, and by performing dedicated heat treatments after densification, anisotropic grain growth is obtained which leads to a platelet microstructure showing enhance fracture toughness. In the present work, recent improvement of the mechanical behaviour of these materials at ambient and high temperatures is reported. By means of a surface oxidation treatment in air it is possible to obtain four-point bending strengths in excess of 1 GPa, and the strength retention at high temperatures is significantly improved.

• Journal of Information Display
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• v.4 no.1
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• pp.1-8
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• 2003

Recent progress in both low pretilt and high pretilt defect free C1 surface stabilized ferroelectric liquid crystal (SSFLC) devices is reviewed. First, by numerical calculation to investigate the balance between surface azimuthal anchoring energy and bulk elastic energy within the confined chevron layer geometry of C1 and C2, it is possible to achieve a zigzag free C1 state by low azimuthal anchoring alignment with a low pretilt angle. The critical azimuthal anchoring coefficient for defect free C1 state is calculated. Its relationship with elastic constant, chevron angle as well as surface topography effect are also discussed. Second, using $5^{\circ}$ oblique SiO deposition alignment method a defect free, large memory angle, high contrast ratio and bistable C1 SSFLC display, which has potential for electronic paper applications has also been developed. The electrooptical properties and bistability of this device have been investigated. Various aspects of defect control are also discussed.

• Journal of the Korean Ceramic Society
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• v.40 no.5
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• pp.494-500
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• 2003

The effects of $Al_2$O$_3$ addition upon the sintering range of clay-EAF dust (the specified wastes produced from steel making process) system body which would be used as a constructing bricks were investigated. The slope of apparent density to sintering temperature decreased for Clay-dust body containing 5~15 wt% A1203 sintered at 1200-125$0^{\circ}C$, and the absorption(%) of specimen sintered above 125$0^{\circ}C$ decreased due to the formation of open pores produced by pore bloating. For the specimen without any $Al_2$O$_3$ addition sintered at 1275$^{\circ}C$, the major phase was cristobalite, the small amount of mullite (3Al$_2$O$_3$ 2SiO$_2$) formed and the hematite (Fe$_2$O$_3$) remained. In the Clay-dust system body containing $Al_2$O$_3$ 15 wt%, however, the cristobalite disappeared and the major phase was mullite. Also the part of $Al_2$O$_3$ reacted with hematite to form hercynite (FeAl$_2$O$_4$). From the these results, addition of $Al_2$O$_3$ to Clay-dust system body enlarges a sintering range; decreasing an apparent density and absorption slop to sintering temperature owing to consumption of liquid phase SiO$_2$ at higher temperature and gas-forming component Fe$_2$O$_3$ at reduced atmosphere which would decrease an amount of liquid formed and increase the viscosity of the liquid produced during the sintering process.

• Applied Science and Convergence Technology
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• v.24 no.3
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• pp.53-59
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• 2015

The field-effect transistors (FETs) with a graphene-based p-n junction channel were fabricated using the patterned self-assembled monolayers (SAMs). The self-assembled 3-aminopropyltriethoxysilane (APTES) monolayer deposited on $SiO_2$/Si substrate was patterned by hydrogen plasma using selective coating poly-methylmethacrylate (PMMA) as mask. The APTES-SAMS on the $SiO_2$ surface were patterned using selective coating of PMMA. The APTES-SAMs of the region uncovered with PMMA was removed by hydrogen plasma. The graphene synthesized by thermal chemical vapor deposition was transferred onto the patterned APTES-SAM/$SiO_2$ substrate. Both p-type and n-type graphene on the patterned SAM/$SiO_2$ substrate were fabricated. The graphene-based p-n junction was studied using Raman spectroscopy and X-ray photoelectron spectroscopy. To implement low voltage operation device, via ionic liquid ($BmimPF_6$) gate dielectric material, graphene-based p-n junction field effect transistors was fabricated, showing two significant separated Dirac points as a signature for formation of a p-n junction in the graphene channel.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.204-209
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• 2004

SiC materials have been extensively studied for high temperature components in advanced energy system and advanced gas turbine. However, the brittle characteristics of SiC such as low fracture toughness and low strain-to fracture still impose a severe limitation on practical applications of SiC materials. For these reasons, $SiC_f/SiC$ composites can be considered as a promising for various structural materials, because of their good fracture toughness compared with monolithic SiC ceramics. But, high temperature and pressure lead to the degradation of the reinforcing fiber during the hot pressing. Therefore, reduction of sintering temperature and pressure is key requirements for the fabrication of $SiC_f/SiC$ composites by hot pressing method. In the present work, Monolithic LPS-SiC was fabricated by hot pressing method in Ar atmosphere at 1760 $^{\circ}C$, 1780 $^{\circ}C$, 1800 $^{\circ}C$ and 1820 $^{\circ}C$ under 20 MPa using $Al_2O_3-Y_2O_3$ system as sintering additives in order to low sintering temperature. The starting powder was high purity ${\beta}-SiC$ nano-powder with an average particle size of 30 nm. Monolithic LPS-SiC was evaluated in terms of sintering density, micro-structure, flexural strength, elastic modulus and so on. Sintered density, flexural strength and elastic modulus of fabricated LPS-SiC increased with increasing the sintering temperature. In the micro-structure of this specimen, it was found that grain of sintered body was grown from 30 nm to 200 nm.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.99-101
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• 2000

The fabrication of the submicron size hole has been interesting due to the potential application of the near field optical sensor or liquid metal ion source. The 2 micron size dot array was photolithographically patterned. After formation of the V-groove shape by anisotropic KOH etching, dry oxidation at $1000^{\circ}C$ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have an etch-mask for dry etching. The reactive ion etching by the inductively coupled plasma (ICP) system was performed in order to etch ~90 nm $SiO_2$ layer at the bottom of the V-groove and to etch the Si at the bottom. The negative ion energy would enhance the anisotropic etching by the $Cl_2$ gas. After etching, the remaining thickness of the oxide on the Si(111) surface was measured to be ~130 nm by scanning electron microscopy. The etched Si aperture can be used for NSOM sensor.

• Journal of the Korean Ceramic Society
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• v.41 no.10 s.269
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• pp.783-787
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• 2004

Microwave dielectric properties and the microstructure of $Ba_5Nb_4O_{15}$ ceramics with $PbO-B_2O_3-SiO_2$ glass frit were investigated to reduce the sintering temperature of $Ba_5Nb_4O_{15}$ ceramics as a function of the amount of glass frit from $0.5wt\%$ to $10wt\%$ and the sintering condition. The sintered density and the microwave dielectric properties of $Ba_5Nb_4O_{15}$ ceramics were remarkably changed with the amount of glass fit which existed as a liquid phase and assisted the densification. $Ba_5Nb_4O_{15}$ with $3wt\%$ $PbO-B_2O_3-SiO_2$ glass frit sintered at $900^{\circ}C$ for 2 h showed dielectric constant (K) of 41.4, a quality factor (Q $\times$f) of 13,485 GHz, and a Temperature Coefficient of resonant Frequency (TCF) of 9 ppm/$^{\circ}C$. Due to no trace of physical and chemical reaction between this composition and Ag electrode cofired at $900^{\circ}C$ for 2 h, this ceramics can be a good candidate for the multilayer dielectric filter.