• Journal of the Korean Ceramic Society
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• v.44 no.8
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• pp.403-406
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• 2007

Ferroelectric Ce-doped $Bi_4Ti_3O_{12}$ (BCT) thin films were deposited by liquid delivery metal organic chemical vapor deposition (MOCVD) onto a $Pt(111)/Ti/SiO_2/Si(100)$ substrate. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface, and the cross-section morphology of the deposited ferroelectric flims. After annealing above $640^{\circ}C$, the BCT films exhibited a polycrystalline structure with preferred (001) and (117) orientations. The BCT lam capacitor with a top Pt electrode showed a large remnant polarization ($2P_r$) of $44.56{\mu}C/cm^2$ at an applied voltage of 5 V and exhibited fatigue-free behavior up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz. This study clearly reveals that BCT thin film has potential for application in non-volatile ferroelectric random access memories and dynamic random access memories.

• Korean Journal of Materials Research
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• v.26 no.6
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• pp.320-324
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• 2016

Porous SiC beads were prepared by freeze-drying a polycarbosilane (PCS) emulsion. The water-in-oil (w/o) emulsion, which was composed of water, PCS dissolved p-xylene, and sodium xylenesulfonate (SXS) as an emulsifier, was frozen by dropping it onto a liquid $N_2$ bath; this process resulted in 1~2 mm sized beads. Beads were cured at $200^{\circ}C$ for 1 h in air and heat-treated at $800^{\circ}C$ and $1400^{\circ}C$ for 1 h in an Ar gas flow. Two types of pores, lamella-shaped and spherical pores, were observed. Lamellar-shaped pores were found to develop during the freezing of the xylene solvent. Water droplets in the w/o emulsion were changed into spherical pores under freeze-drying. At $1400^{\circ}C$ of heat-treatment, porous SiC was synthesized with a low level of impurities.

• Journal of the Korean Ceramic Society
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• v.46 no.5
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• pp.467-471
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• 2009

Effects of boron and carbon on the densification and thermal decomposition of an AlN-SiC-$TiB_2$ system were investigated. $SiO_2$ was mostly removed by the addition of carbon, while $Al_2O_3$ formed $Al_4O_4C$ and promoted the densification of the systems above $1850^{\circ}C$. Rather porous specimens were obtained without the additives after hot pressing at $2100^{\circ}C$, while densification was mostly completed at $2000^{\circ}C$ by using the additives. The sintering temperature decreased further to $1950^{\circ}C$ by applying spark plasma sintering. The additives promoted the shrinkage of AlN by forming a liquid phase which was originated from the carbo- and boro-thermal reduction of $Al_2O_3$ and AlN.

• Journal of the Korean Ceramic Society
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• v.29 no.1
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• pp.15-22
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• 1992

The reason for permanent shrinking of recycled castable refractories from alumino-silicate waste refractories was investigated and the method to control shrinking is suggested in order to increase maximum service termperature. The porosity of castable refractories with waste material as large aggregate decreases after heat treatment because the porosity of waste refractories is greater than the of green material, in which CaO around large aggregate penetrates into aggregate and promotes liquid phase sintering. The shrinking of recycled castable refractories resulted in the decrease in porosity can be controled by addition of green kaolin chamotte as large aggregate. The shrinking of recycled castable refractories caused by the differences in densities of mineral phases before and after heat treatment can be controled by addition of kyanite. The use of green kaolin chamotte and kyanite increases the service temperature of recycled castable refractories up to 1500$^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.46 no.5
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• pp.452-455
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• 2009

A cost-effective route to synthesize $\beta$-SiAlONs from Si mixtures by reaction bonding followed by post-sintering was investigated. Three different z values, 0.45, 0.92 and 1.87, in $Si_{6-z}Al_zO_zN_{8-z}$ without excess liquid phase were selected to elucidate the mechanism of SiAlON formation and densification. For RBSN (reaction-bonded silicon nitride) specimens prior to post-sintering, nitridation rates of more than 90% were achieved by multistep heating to $1400^{\circ}C$ in flowing 5%$H_2$/95%$N_2$; residual Si was not detected by XRD analysis. An increase in density was acquired with increasing z values in post-sintered specimens, and this tendency was explained by the presence of higher amounts of transient liquid phase at larger z values. Measured z values from the synthesized $\beta$-SiAlONs were similar to the values calculated for the starting compositions. Slight deviations in z values between measurements and calculations were rationalized by a reasonable application of the characteristics of the nitriding and post-sintering processes.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1634-1636
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta$-SiC-$TiB_2$ electroconductive ceramic composites were investigated as function of the liquid forming additives of $Al_{2}O_{3}+Y_{2}O_3$ and the annealing method. Phase analysis of composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and YAG($Al_{5}Y_{3}O_{12}$). In pressureless annealing method, the relative density and the mechanical properties of composites were increased with increasing $Al_{2}O_{3}+Y_{2}O_3$ contents because YAG of reaction between $Al_{2}O_3$ and $Y_{2}O_3$ was increased. But In pressured annealing method, reaction between $Al_{2}O_3$ and $Y_{2}O_3$ formed YAG but the relative density decreased with increasing $Al_{2}O_{3}+Y_{2}O_3$ contents. The electrical resistivity of the composites was all positive temperature coefficient resistance (PTCR) in the temperature range of 25$^{\circ}C$ to 700$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.15-18
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• 2001

The composites were fabricated 61 vol% $\beta$-SiC and $39vol%TiB_2$ powders with the liquid forming additives of 8, 12, 16wt% $Al_2O_3+Y_2O_3$ by hot pressing at $1730^{\circ}C$ and subsequent pressed annealing and pressureless annealing at $1750^{\circ}C$ for 4 hours to form YAG. The result of phase analysis of composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density of composites were increased with increasing $Al_2O_3+Y_2O_3$ contents. The fracture toughness showed the highest value of $7.77MPa{\cdot}m^{1/2}$ for composites added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest of $7.3{\times}10^{-4}{\Omega}{\cdot}cm$ and $3.8{\times}10^{-3}/^{\circ}C$, respectively, for composite added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.189-194
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• 2005

[ $SiO_2$ ] nanowires were synthesized using the catalyst evaporation method. Grown nanowires had different shapes by kind of used metal catalyst. Mean diameters of grown $SiO_2$ nanowire were about 30 nm. The kind of catalysts affected microstructure of grown $SiO_2$ nanowire because of its typical growth reactions through the liquid state metal catalysts. Optical property were measured by photoluminescence spectroscopy. Relatively broad peak was obtained and mean peak positioned at 450 nm.

• Applied Chemistry for Engineering
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• v.20 no.5
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• pp.565-569
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• 2009

Nano-sized green and blue phosphor powders were synthesized by liquid phase method to confirm the size and morphology. By using that process, the particle sizes of green and blue phosphor particles were 80 nm and 60 nm, respectively. The characteristic comparison of $Zn_2SiO_4$ : Mn and BAM : Eu was carried out and as a result, $Zn_2SiO_4$ : Mn powders showed an higher PL performance compared to BAM : Eu.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1228-1229
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressure or pressureless annealing at 1,650[$^{\circ}C$] for 4 hours. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and In Situ $YAG(Al_5Y_3O_{12})$. The relative density, the flexural strength and the Young's modulus showed the highest value of 88.32[%], 136.43[MPa] and 52.82[GPa] for pressure annealed SiC-$TiB_2$ composites at room temperature. The electrical resistivity showed the lowest value of 0.0162[${\Omega}{\cdot}cm$] for pressure annealed SiC-$TiB_2$ composite at 25[$^{\circ}C$]. The electrical resistivity of the pressure annealed SiC-$TiB_2$ composite was positive temperature coefficient resistance (PTCR) but the electrical resistivity of the pressureless annealed SiC-$TiB_2$ composites was negative temperature coefficient resistance(NTCR) in the temperature ranges from 25[$^{\circ}C$] to 700[$^{\circ}C$].