• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.3
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• pp.332-337
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• 2006

We prepared 100 nm-thick CoNi composite silicide on a 70 nm-thick polysilicon substrate. Composite silicide laye.s were formed by rapid thermal annealing(RTA) at the temperatures of $700^{\circ}C,\;900^{\circ}C,\;1000^{\circ}C$ for 40 seconds. A Focused ion beam (FIB) was used to make nano-patterns with the operation range of 30 kV and $1{\sim}100$ pA. We investigated the change of thickness, line width, and the slope angle of the silicide patterns by FIB. More easily made with the FIB process than with the conventional polycide process. We successfully fabricated sub-100nm etched patterns with FIB condition of 30kv-30pA. Our result implies that we may integrate nano patterns with our newly proposed CoNi composite silicides.

• Journal of Korean Ophthalmic Optics Society
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• v.1 no.1
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• pp.1-14
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• 1996

The mixed alkali silicate glasses doped 0.1 mol% $Fe_2O_3$ are fabricated for studying the effect of transition metal oxides, which is related to the $Li^-$ ion movement in Magic-Angle-Spinning NMR. We have investigated the spin-lattice relaxation times in the room temperature and measured the $^7Li$ MAS-NMR spectrum with temperature. When the $Fe_2O_3$ oxides are added in alkali silicate glasses, the width of spectrum is changed a little but the line shape is hardly varied. For this reason, we can think that the mixed alkali effects are shown sufficiently in the spin-spin relaxation processes. However, it is not mixed alkali effects in this case. The activation energy of $Li^-$ ions are diminished in mixed alkali glasses. From the analysis of $Li^-$ diffusion environment, spin-lattice relaxation time and the nuclear magnetization, it is confirmed that the alkali mixed effects are not shown in $^7Li$ spin-lattice relaxation processes.

• Research in Plant Disease
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• v.21 no.4
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• pp.334-336
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• 2015

Sclerotium rot on Pulsatilla koreana was observed in the exhibition field of Jinju Agriculture Technology Center in July 2013. The infected plants showed water-soaked, blighted and rotted symptoms. White mycelial mats spread over lesions, and then numerous sclerotia were formed on flower stalk and flower stem near the soil line. The sclerotia were globoid in shape, 1-3 mm in size and white to brown in color. The optimum temperature for mycelial growth and sclerotia formation on PDA was $30^{\circ}C$ and the hyphal width was $4-8{\mu}m$. The typical clamp connections were observed in the hyphae of the fungus grown on PDA. For molecular identification, the complete ITS rDNA sequence of the causal fungus was sequenced and analyzed. On the basis of mycological characteristics, ITS rDNA sequence analysis, and pathogenicity to host plants, this fungus was identified as Sclerotium rolfsii Saccardo. This is the first report of sclerotium rot on Pulsatilla koreana caused by S. rolfsii in Korea.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.116.1-116.1
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• 2011

Materials with a combination of high electrical conductivity and optical transparency are important components of many electronic and optoelectronic devices such as liquid crystal displays, solar cells, and light emitting diodes. In this study, to fabricate a low-resistance and high optical transparent electrode film for organic photovoltaic, the following steps were performed: the design and manufacture of an electroforming stamp mold, the fabrication of thermal roll imprinted (TRI) poly-carbonate (PC) patterned films, the manufacture of high-conductivity and low-resistance Ag paste which was filled into patterned PC film using a doctor blade process and then coated with a thin film layer of conductive polymer by a spin coating process. As a result of these imprinting processes the PC films obtained a line width of $10{\pm}0.5{\mu}m$, a channel length of $500{\pm}2{\mu}m$, and a pattern depth of $7.34{\pm}0.5{\mu}m$. After the Ag paste was used to fill part of the patterned film with conductive polymer coating, the following parameters were obtained: a sheet resistance of $9.65{\Omega}$/sq, optical transparency values were 83.69 % at a wavelength of 550 nm.

• Journal of Korean Society of Transportation
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• v.34 no.3
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• pp.248-262
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• 2016

The study documents the analysis on characters and symbols shown in the pavement markings in the perspective of mathematics educators. The purpose of this study is to propose a pavement marking method that can enhance readability from the driver's eye position. To this end, this study analyzed the figure of the pavement markings that can be actually recognized by the projective geometry perspective. As a result, it proposed alternatives to the current pavement markings by introducing the concept of the compression ratio. Results of the study are as follows. First, the rule was established to obtain the compression ratio. If the observation of two viewing angles are x and y, then the compression ratio S is ${\sin}y/{\cos}\(\frac{x-y}{2}\)$. Second, we presented two alternatives to the pavement marking method for the displayed information. One is a method for improving the pavement markings in terms of the compression ratio, the other is a method by varying vertical length of the pavement markings while holding its width constant. Based on the outcomes from this study, a mathematical analysis can be further studied for the perception of speed according to the types of pavement marking line.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.543-543
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• 2013

Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.215-216
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• 2013

The silicide is a compound of Si with an electropositive component. Silicides are commonly used in silicon-based microelectronics to reduce resistivity of gate and local interconnect metallization. The popular silicide candidates, CoSi2 and TiSi2, have some limitations. TiSi2 showed line width dependent sheet resistance and has difficulty in transformation of the C49 phase to the low resistive C54. CoSi2 consumes more Si than TiSi2. Nickel silicide is a promising material to substitute for those silicide materials providing several advantages; low resistivity, lower Si consumption and lower formation temperature. Nickel silicide (NiSi) nanowire (NW) has features of a geometrically tiny size in terms of diameter and significantly long directional length, with an excellent electrical conductivity. According to these advantages, NiSi NWs have been applied to various nanoscale applications, such as interconnects [1,2], field emitters [3], and functional microscopy tips [4]. Beside its tiny geometric feature, NW can provide a large surface area at a fixed volume. This makes the material viable for photovoltaic architecture, allowing it to be used to enhance the light-active region [5]. Additionally, a recent report has suggested that an effective antireflection coating-layer can be made with by NiSi NW arrays [6]. A unique growth mechanism of nickel silicide (NiSi) nanowires (NWs) was thermodynamically investigated. The reaction between Ni and Si primarily determines NiSi phases according to the deposition condition. Optimum growth conditions were found at $375^{\circ}C$ leading long and high-density NiSi NWs. The ignition of NiSi NWs is determined by the grain size due to the nucleation limited silicide reaction. A successive Ni diffusion through a silicide layer was traced from a NW grown sample. Otherwise Ni-rich or Si-rich phase induces a film type growth. This work demonstrates specific existence of NiSi NW growth [7].

• The Journal of Engineering Geology
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• v.28 no.3
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• pp.397-409
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• 2018

Izumi sedimentary basin (ISB), west of Shikoku, Japan, is widely distributed across the western side of the Sakuragi Bend of the Japan Median Tectonic Line (MTL). It is not obvious how the ISB formed, but this feature is similar to an asymmetric pull-apart basin. The stratigraphic succession and tuff layers show that ages tend to decrease toward the Sakuragi Bend. We investigate whether the ISB is an asymmetric pull-apart basin using analogue model experiments with running sand. A pull-apart basin of length 60 cm and width 20 cm is formed, and secondary normal faults appear on the surrounding surface. A cross-section parallel to the direction of displacement shows that the stratigraphic succession of the pull-apart basin becomes younger toward the releasing bend. A listric normal fault, which has the opposite dip to the master fault, is observed in a cross-section perpendicular to the direction of displacement. These results are consistent with the observed properties of the ISB west of Shikoku, thereby supporting the possibility that the ISB is an asymmetric pull-apart basin.

• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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• v.15 no.1
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• pp.75-80
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• 1997

In other to construct a subway, we have to consider the position of the subway and acquisition of a topography, profile-map, cross-map, underground facilities map. All information of underground is demanded accurate location in other to prevent of accident of underground in subway construction. We must think about water lines, sewer lines, electronic lines, telephone lines, all urban gas-line because these are needed construction the subway. And attributes of underground facilities recorded on topography are characteristics. length, width. number, position, and depth of the lines. We have to record these attributes because these are very important to design map on subway construction. If we develop GIS (Geographic Information System) to use the exact in-formation of the underground facilities, we can be management safely and prevent very dangerous accident as fast as possible. In this study, attribute informations are linked geographic informations about underground facilities and we can develop Underground Facilities Management System(UFMS) to analysis dangerous region through dangerous degreed and predict accident range with these informations.

• The Korean Journal of Quaternary Research
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• v.17 no.2
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• pp.157-159
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• 2003

Much of northern Asia is lacking in high-resolution palaeoclimatic data coverage. This vast region thus represents a sizeable gap in data sets used to reconstruct hemispheric-scale temperature trends for the past millennium. To improve coverage, we present a regional-scale composite of four tree-ring width records of Siberian pine and Siberian larch from temperature-sensitive alpine timber-line sites in Mongolia. The chronologies load closely in principal components analysis (PCA) with the first eigenvector accounting for over 53% of the variance from ad 1450 to 1998. The 20-year interval from 1974 to 1993 is the highest such growth period in this composite record, and 17 of the 20 highest growth years have occurred since 1946. Thus these trees, unlike those recently described at some northern sites, do not appear to have lost their temperature sensitivity, and suggest that recent decades have been some of the warmest in the past 500 years for this region. There are, however, comparable periods of inferred, local warmth for individual sites, e.g., in 1520-1580 and 1760-1790. The percent common variance between chronologies has increased through time and is highest (66.1%) in the present century. Although there are obvious differences among the individual chronologies, this result suggests a coherent signal which we consider to be related to temperature. The PCA scores show trends which strongly resemble those seen in recent temperature reconstructions for the Northern Hemisphere, very few of which included representation from Eurasia east of the Ural Mountains. The Mongolia series therefore provides independent corroboration for these reconstructions and their indications of unusual wanning during the twentieth century.