• The Research Journal of the Costume Culture
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• v.7 no.3
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• pp.134-141
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• 1999

The purpose of this study is to provide new style for fashion illustration fo different image of Korean middle aged women. The research method is as follows. First, we make basic style base on The Korea Industrial Advancement Administration\`s Korean standard stomatype. Second, it give variety to body\`s rate and make each different 8 style. The subject are 144 college students who majoring clothing, fashion design and they have responded to the questionnaires. Questionnaires were taken from April, 1998 to Jan. 1999. Data were analyzes by analysis of variance, ANOVA test, Dunkun test, SPSS. PC/sup +/. As a result of this study, we found this following conclusions, 1. Well-proportion style have the exaggerated shoulder and the extended body at the same rate below waist line than basic style. 2. Reduction and extension need stability and well balanced. 3. Fashion illustration of middle aged women\`s clothing expression is not proper too narrow width, too long length of legs. 4. To making length, it is award well-proportion have too long hand or too long arm.

• Journal of the Korean Home Economics Association
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• v.46 no.2
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• pp.127-135
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• 2008

The study purpose was to increase Han-bok's convenience by changing materials while maintaining keep the traditional Han-bok style. For this purpose we surveyed actual Han-Bok wearers about the inconveniences of its form and design by combining knit with Han-bok. On the basis of this survey, we present a practical design for use in daily fife. Responding to the question about Jeo-Go-Ri(jacket), most respondents preferred a Han-bok which stressed elasticity by utilizing knit on Jeo-Go-Ri's front and back body line(JD1, JD4). For the question about ann holes, most respondents liked a design which substituted knit materials for Sam-hoi-jang(colorful strips) to ensure ease of use and shorten both the width and length of the breast-tie(JD2, JD3). For the sleeve edge, they preferred a design which solved the difficulties of rolling up the sleeve when working ($JD2{\sim}JD5$). Regarding the most inconvenient aspect of wearing Chi-mas(skirts), the respondents indicated tightening of the breast and an uncomfortable feeling due to the skirt length. This suggested that the waist of the vest should be lengthened to avoid the feeling of pressure(CD2, CD5). Regarding changes to the skirt shape the respondents preferred buttons and hooks rather than using skirt strings(CD4, CD5).

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2005.11a
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• pp.329-334
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• 2005

In this paper, the characteristics of linealy bent wire antennas are first analyzed for shortening straight wire antennas. The results are appropriately applied to the design of the integrated zigzag dipole antenna. Since the integration give rise to discontinuities due to line width, the integrated parasitics are properly attached to both sides of substrate for improving the antenna gain and return loss. The design results are verified with experiments.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2005.11a
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• pp.371-374
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• 2005

This paper presents the design and fabrication of a cost effective and broad band 8$\times$8 stacked patch array antenna which are backed by a metal cavity operating at 400Hz based on 4 layers LTCC technology. Gain of antenna can be enhanced by using a metal cavity, which can be easily implemented by using LTCC substrates and vias. The broadband performance can be obtained by varying the dimension of patch and the number of layers. Furthermore, to keep the feeding network as smal1 as possible and reduce radiation from feeding network a mirrored patch orientation and embedded micro strip line are adopted, The fabricated antenna is $40\times45\times0.4$ $mm^3$in size. It shows gain 20.4dBi, beam width 10.7deg and impedance bandwidth of l0dE return loss 3.35GHz (40.9$\sim$44.25 GHz), which is about 8% of a center frequency.

• Laser Solutions
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• v.17 no.3
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• pp.19-23
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• 2014

To directly engrave circuit-line patterns as wide as $6{\mu}m$ in a buildup film to be used as an IC substrate, we applied a projection ablation technique in which an 8 inch dielectric ($ZrO_2/SiO_2$) mask, a DPSS 355nm laser instead of an excimer laser, a ${\pi}$-shaper and a galvo scanner are used. With the ${\pi}$-shaper and a square aperture, the Gaussian beam from the laser is shaped into a square flap-top beam. The galvo scanner before the $f-{\theta}$ lens moves the flat-top beam ($115{\mu}m{\times}105{\mu}m$) across the 8 inch dielectric mask whose patterned area is $120mm{\times}120mm$. Based on the results of the previous research by the authors, the projection ratio was set at 3:1. Experiments showed that the average width and depth of the engraved patterns are $5.41{\mu}m$ and $7.30{\mu}m$, respectively.

• Laser Solutions
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• v.16 no.4
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• pp.17-23
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• 2013

The research for the development of roll-to-roll printing process is actively underway on behalf of the existing semiconductor process. The roll-to-roll printing system can make the electronic devices to low-cost mass production. This study is performed for developing the manufacturing technology of the printing roll used in the printing process of electronic devices. The indirect laser engraving technology is used to create printable roll and the printable roll is made out of the chrome coated roll after coating copper and polymer on the surface of steel roll, ablating the polymer on the surface of roll and etching the roll. The 3 dimensional laser scanner and roll rotating systems are constructed and the system control program is developed. We have used the fiber laser of 100 W grade, the 3 dimensional laser scanner and the 3 axes moving stage system with a rotating axis. We have found the optimal conditions by performing the laser patterning experiments and can make the minimum line width of $24{\mu}m$ by using the developed 3 dimensional laser scanner system.

• Journal of Korea Society of Industrial Information Systems
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• v.4 no.4
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• pp.111-116
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• 1999

In this paper, the electromagnetically coupled microstrip dipole antenna by adapting one parasitic metal-strip(dipole) between the microstrip transmission line open end and the radiating microstrip dipole antenna is presented for the bandwidth improvement The microstrip dipole antenna is simulated using Ensemble 51 simulation package The effects of varying several physical parameters, such as the lengths of radiating dipole and parasitic dipole and the width of parasitic dipole are investigated The bandwidth behavior of the 3-layer optimum antenna is compared with that of 2-layer antenna without the parasitic dipole. Experimental result for the obtained broadband performance is presented and discussed.

• Research in Plant Disease
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• v.16 no.3
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• pp.323-325
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• 2010

The stem rot of sunflower (Helianthus annuus) occurred sporadically in the experimental field of Gyeongsangnam-do Agricultural Research and Extension Services, on September, 2009. The infected plants were wilted and water-soaked brown spots were formed on the stem, than infected stems were mostly died. White mycelial mats were spread over lesions, and then sclerotia were formed on stem and near soil line. The sclerotia were globoid in shape, 1~3 mm in size and white to brown in color. The optimum temperature for mycelial growth and sclerotia formation on PDA was $30^{\circ}C$ and the hyphal width was $4{\sim}8\;{\mu}m$. The typical clamp connections were observed in the hyphae of the pathogenic fungus. On the basis of mycological characteristics and pathogenicity to host plants, this fungus was identified as Sclerotium rolfsii. This is the first report on the stem rot of sunflower by S. rolfsii in Korea.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1277-1280
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• 2005

A high-aspect-ratio and high-resolution stainless steel shadow mask for organic thin-film transistors (OTFTs) circuit has been fabricated by a new method which combines photochemical machining, micro-electrical discharge machining (micro-EDM), and electrochemical etching (ECE). First, connection lines and source-drain holes are roughly machined by photochemical etching, and then the part of source and drain holes is finished by the combination of micro-EDM and ECE processes. Using this method a $100\;\mu{m}$ thick stainless steel (AISI 304) shadow mask for inverter can be fabricated with the channel length of $30\;\mu{m}\;and\;10\;\mu{m}\;respectively.\;The\;width\;of\;connection line\;is\;150\;\mu{m}$. The aspect ratio of the wall is about 5 and 15, respectively. Metal lines and source-drain electrodes of OTFTs were successfully deposited through the fabricated shadow mask.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.309-314
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• 1996

We found that SOG which had been used in plarnarization of VLSI circuit fabrication at present could be used as a resist material for AFM lithography. In this experiment on the basis of previous studies, we improved the process flexibility by controlling the coating film thickness, etching time, etching selectively and proper applied voltage on the pattern size to apply for practical VLSI lithography process. We obtained pattern with the current of 5 nA at 60 V. The line width was 800 $\AA$. With the developed flexibility of SOG as a resist material, AFM lithography will be a expedient technique in the next generation DRAM fabrication.