• 한국철도학회:학술대회논문집
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• 한국철도학회 2007년도 추계학술대회 논문집
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• pp.51-56
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• 2007

Pantograph of the electric train is the important part receiving current by adhereing contact wire. Wearing rate of pantograph or contact wire is changed by the type of pantograph and material of adhering part. In special, the weather influences the relative wearing rate and wearing type of pantograph Slider and Contact wire with steep wearing in arc and life cycle of pantograph slider. Presently, the weather causes side-wearing and over-wearing of pantograph slide installed in electric train. So it is difficult to manage and operate the electric train. Although the quality of slide using in line4 vehicle was finished the test in line 2 vehicle experimentally, it has to apply after pantograph is installed in some electric trains and check the influence in it and contact wire. It is because line4 section is very different from line2 section. Experimental application is the sequence to certify the safety and abrasion resistance importantly by enlarging experimental application with increase of the experimental electric train. The lenth of line4 in Seoul Metro is 71.5[km]. It is long section. The line is mixed DC 1,500[V] section and AC 25,000[V] section. It has underground section of 41.5[km] and ground section of 30[km]. Ground section is about 42% and receives much influence in the rain during the rainy season. After experimental application we found that this pantograph slide has twice as much abrasion resistance despite a little deviation and found the occurrence probability of arc and side-wearing is decreased considerably.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2004년도 추계학술대회 논문집
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• pp.1353-1359
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• 2004

There are many massive components added on the railway overhead-line. These components cause larger fluctuations of contact forces, which are due to wave reflections and Doppler effects when a high-speed train passes those. In this paper, mathematical formula are derived for the relation between the added mass and contact force fluctuations. Using the derived formula, we calculate a added mass on the overhead-line which cause amplification factor to become 2.5. German design practice requires that amplification factor due to the wave reflection should be less than 2.5 to obtain good current collection performance. To show the validity of the formula, simulation results are compared with the calculation results. Simulation results showed that contact force fluctuations grow rapidly when an added mass is larger than the calculation result. Therefore, the simple form of formula can be used for estimating maximum added mass not to cause large fluctuations of contact forces in early design phase.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2007년도 춘계학술대회 논문집
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• pp.219-222
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• 2007

The Full-Off Fitting of Movable Bracket using conventional line have received a dynamic contact impact between contact wire and pantograph of electric rolling stock, so this impact cause a rapid vibration of foreword and back near the supporting point of movable bracket. The Full-Off Fitting on Movable Bracket in conventional line differs from that in high speed line. Now conventional line have required a speed up for new electric locomotive and electric car. In speed-up track and big impact place, the Full-Off Fitting and the dropper often get demage. We have done a study of buffering function to solve that problem in conventional line. We have find a need adopting buffer fitting. It is decrease a dynamic impact between contact wire and pantograph of electric rolling stock.

• 전기학회논문지
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• 제64권8호
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• pp.1256-1261
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• 2015

Along with the increase of railway catenary system operation speed to 400 km/h, there have been growing demands for good quality current collection systems that satisfy quality standards as well as criteria for safe working. Retaining uniform elasticity tension of contact wires is essential in maintaining high quality contact between pantograph and OCL (Overhead Contact Line) of current collection systems in high speed railways. Therefore, the tension of contact wire must be kept within tight tolerance limits in both working conditions and adverse weather conditions of catenary system. In accordance with these conditions, this paper presents a real time monitoring system for the tensioning device of the newly installed catenary system on the special route of Honam high speed line for 400 km/h operation. For the verification of the true value of tension of contact wires, we have developed ring-type tensioning sensors which were installed on supporting points of mast which compose the catenary system. According to the field test performed on the Honam high speed line catenary system, variation of tension was measured accurately in real-time.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2009년도 춘계학술대회 논문집 특별세미나,특별/일반세션
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• pp.499-503
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• 2009

In this study, the dynamic characteristic of a contact wire and pantograph suppling electrical power to high-speed trains are investigated from an electrical response point of view. To analysis power line disturbance by induced contact loss phenomenon for high speed operation, a hardware Simulator which considered contact loss between contact wire and the pantograph as well as contact wire deviation is developed. It is confirmed that a contact wire and pantograph model are necessary for studying the dynamic behavior of the pantograph system. One of the most important needs accompanied by increasing the speed of high-speed train is reduced that an arc phenomenon by loss of contact brings out EMI. In case of a high-speed train using electrical power, as comparison with diesel rolling stock, PLD(Power Line Disturbance) such as harmonic, transient voltage and current, EMI, dummy signal injection etc usually occurs. Throughout experiment, it is verified that an arc phenomenon is brought out for simulator operation and consequently conducted noise is flowed in electric circuit by power line disturbance.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2002년도 학술대회지
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• pp.491-494
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• 2002

To assess the electrostatic interaction of surfaces at the triple contact line, the electrostatic field is analyzed by using the finite element method. The Helmholtz free energy is used as a functional which should be minimized under an equilibrium condition. The numerical results are compared with the nonlinear analytical solution for a two-dimensional charged interface and linear solution for a wedge shaped geometry, which shows fairly good agreement. The method is applied to the analysis of electrostatic influence on the contact angle on a charged substrate. The excess free energy found to increase drastically as the contact angle approaches to zero. This excess free energy Plays an opposite role to the Primary electrocapillary effect, as the contact angle gets smaller. This enables an alternative explanation for the contact-angle saturation phenomenon occurring in electrical control of surface tension and contact angle.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권1호
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• pp.20-30
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• 2001

A 1.8V $650{\;}\textrm{mm}^2$ 4Gb DRAM having $0.10{\;}\mu\textrm{m}^2$ cell size has been successfully developed using 0.11 $\mu\textrm{m}$DRAM technology. Considering manufactur-ability, we have focused on developing patterning technology using KrF lithography that makes $0.11{\;}\mu\textrm{m}$ DRAM technology possible. Furthermore, we developed novel DRAM technologies, which will have strong influence on the future DRAM integration. These are novel oxide gap-filling, W-bit line with stud contact for borderless metal contact, line-type storage node self-aligned contact (SAC), mechanically stable metal-insulator-silicon (MIS) capacitor and CVD Al process for metal inter-connections. In addition, 80 nm array transistor and sub-80 nm memory cell contact are also developed for high functional yield as well as chip performance. Many issues which large sized chip often faces are solved by novel design approaches such as skew minimizing technique, gain control pre-sensing scheme and bit line calibration scheme.

• 대한기계학회논문집B
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• 제38권6호
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• pp.539-545
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• 2014

실리콘 태양전지의 실버 전극과 이미터층 사이의 접촉 비저항은 원형 접촉 비저항 측정법과 선형 비저항 측정법을 이용하여 계측되어 왔다. 원형 접촉 비저항 측정법은 누설 전류를 차단하기 위한 메사 에칭 등의 부가적인 공정이 요구되지 않는 장점이 있으며, 선형 접촉 비저항 측정법은 완성된 태양전지로부터 직접 샘플을 취득하여 측정을 수행할 수 있다는 장점이 있다. 본 연구에서는 이 두 가지 측정법들을 이용하여 실리콘 태양전지 전면 전극의 접촉 비저항을 계산하기 위한 저항값들을 측정할 때 수반되는 문제점들에 대한 비교연구를 수행하였으며, 선형 접촉 비저항 측정법이 실버 전극의 선폭과 두께에 따른 접촉 비저항 변화를 좀더 정확하게 묘사할 수 있는 요인에 대해 설명하였다.

• 대한기계학회논문집A
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• 제23권7호
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• pp.1231-1237
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• 1999

Applying the conjugate contact condition, contact lines of a cylindrical worm gear has been calculated. The characteristics of tooth contact were analyzed and the pitting resistance were also assessed. It has been verified that: i) the length of contact is shortest on the 1st tooth of the front region, ii) the contact region is more narrow in the recess side than in the access side, iii) the contact region is more narrow in worm than in worm wheel. Hence, the pitting resistance is weakest in the recess side of the 1st contacting worm tooth.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1509_1510
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• 2009

This paper presents the design and simulation results of ohmic contact RF MEMS silicon switch with a high isolation at high frequencies along with the position of a contact part, initial off-state and intermediate off-state including the state where a contact part is placed right over a signal line of coplanar waveguide (CPW). The ohmic contact part is connected with comb drives made of high resistivity single crystalline silicon. The released contact part is $30{\mu}m$ apart from the edge of signal line on the glass substrate along the lateral direction (x-direction) at initial off-state. The electrostatic force of the comb electrode creates the x-directional movement thus initial state is converted to the intermediate off-state. The initial off-state of the switch results in isolations of -31 dB, -24 dB and reflections of -0.45 dB, -0.67 dB at 50 GHz and 110 GHz, respectively. It shows the isolation degradation when the contact part moves right over the signal line of CPW like an initial off-state of a conventional MEMS switch. The isolations and reflections are -31 dB, -24 dB and -0.50 dB, -1.31 dB at 50 GHz and 110 GHz, respectively at the intermediate off-state.