• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.64-72
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• 2006

We demonstrated organic light-emitting devices (OLEDs) based on the organic thin-film materials such as tris-(8-hydroxyquinoline) aluminum $(Alq_3)$. The structure of OLEDs was vacuum deposited upon transparent and thin glass substrates pre-coated with a transparent, conducting indium tin oxide thin film. The luminance characteristics, current, capacitance, and dispersion factor for degraded OLEDs, which were made by various bias currents $(0.5mA\;{\leq}\;I_{Bias}\;{\leq}9mA)$, are studied. The current dependences of lifetime were divided at approximately 2mA, and they represented nearly linear behaviors but had different slopes in a logarithmic plot of lifetime versus bias current. With lighting OLEDs, the anomaly of capacitance, as shown in the CV curve, occurred because of two factors, polarization in the bulk of organic materials and the interface between the metal and organic layers. In decayed OLEDs that had lower bias currents of less than 2mA, it was found that the degradation of luminance was related to both the decrease of polarization and to the lowering of the injection barrier.

• Journal of the Korean Vacuum Society
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• v.16 no.3
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• pp.172-180
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• 2007

A new diagnostics of plasma electron temperature and plasma density is introduced with the observation of the light emission along the tube of external electrode fluorescent lamps. With two different methods operating an external electrode fluorescent lamp of outer diameter 4.0 mm and length 860 mm for the back-light source of 37-inch LCD-TVs, the lighting modes and the plasma properties are investigated. In the center balance operation, the light-emission propagates simultaneously from both sides of the high voltage electrodes to the center of the lamp, while in conventional operation the light-emission propagates from the one end of a high voltage to the other ground electrode. In the operation value of luminance $10,000{\sim}15,000cd/m^2$, the electron plasma thermal energy $(kT_e)$ is about $1.3{\sim}2.7eV$ with the electron density $(n_e)$ is about $(1.6{\sim}3.6){\times}10^{16}m^{-3}$.

• Journal of Bio-Environment Control
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• v.11 no.1
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• pp.40-44
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• 2002

A prototype of closed-type transplant production system(CTTPS) with fully environmental control was developed to produce massively quality transplants. Four photosynthetic photon flux(PPF) levels of 200,300,400 and 500$\mu$mol . m$^{-2}$ .s$^{-1}$ , four photoperiod levels of 1816 h,12/12h, 9/15 h and 6/18 h were provided to analyze the growth and development of cucumber plug seedlings(Cucumis sativus L., cv. Kyuewosalichungiang) as affected by PPF and photoperiod in a CTTPS. Effect of photoperiod on the growth and development of cucumber plug seedlings produced in a CTTPS was higher than PPF, Stem diameters dry weight of shoot and roots number of leaves, leaf with and length, and SPAD value of cucumber plug seedlings produced in a CTTPS were significantly high as compared to the control. But stem length of plug seedlings produced in a CTTPS was shorter than those of the control. Growth characteristics of cucumber plug seedlings raised at photoperiod of 6/18 h and PPF of 200$\mu$mol . m$^{-2}$ .s$^{-1}$ were similar to the those of the control. These results suggest that cucumber quality transplant can be produced at relatively short photoperiod and low PPF, It means that the electric energy consumed for the production of cucumber plug seedlings in a CTTPS can be saved.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.9
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• pp.4177-4185
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• 2012

LEDs are becoming the most suitable candidate replacing traditional fluorescent lamps because of its eco-friendly characteristics. LEDs are also actively used to design green building system and to make outdoor billboard as a back-light system due to its high energy efficiency. In this paper, we have developed AC direct driver for $12{\times}12$ FLB(flexible LED board) and LED flat light without SMPS. It has LID-PC-R101B driver IC that can support the high power factor and be composed of LED switching circuit in group. Also, an elaborate system designs can guarantee a high luminous efficiency, a high reliability and a low power consumption. The proposed FLB has the ultra slim shape of $450{\times}450$ mm, width of 4 mm and weight of 280 g. In the end, we have developed a prototype of FLB for billboard and flat light for room lighting with AC direct driver iposrder to verify the performance of the proposed system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.4
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• pp.159-164
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• 2009

We fabricated 40 nm-thick cobalt silicide ($CoSi_2$) as a buffer layer, on p-type Si(100) and Si(111) substrates to investigate the possibility of GaN epitaxial growth on $CoSi_2$/Si substrates. We deposited GaN using a HVPE (hydride vapor phase epitaxy) with two processes of process I ($850^{\circ}C$-12 minutes + $1080^{\circ}C$-30 minutes) and process II ($557^{\circ}C$-5 minutes + $900^{\circ}C$-5 minutes) on $CoSi_2$/Si substrates. An optical microscopy, FE-SEM, AFM, and HR-XRD (high resolution X-ray diffractometer) were employed to determine the GaN epitaxy. In case of process I, it showed no GaN epitaxial growth. However, in process II, it showed that GaN epitaxial growth occurred. Especially, in process II, GaN layer showed selfaligned substrate separation from silicon substrate. Through XRD ${\omega}$-scan of GaN <0002> direction, we confirmed that the combination of cobalt silicide and Si(100) as a buffer and HVPE at low temperature (process II) was helpful for GaN epitaxy growth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• Korean Journal of Poultry Science
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• v.42 no.2
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• pp.125-132
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• 2015

The Far Infrared Ray (FIR) is part of the natural energy as light spectrum of sunlight. Human can disentangle the colors within visible ray, but FIR is invisible to human sight because it has longer wavelength than visible ray. The effect of using FIR on broiler performance, blood biochemical profiles and fecal gas emission from litter. Day-old semi-broiler chicks (Ross ♂ ${\times}$ Hyline ♀) were obtained and assigned to eight pens, 2 replicates of white and green color LED light, and with FIR on each color light, in a 20L:4D of lighting program. The body weight gain and feed efficiency were tend to improve under the green color than white color, which were increased by exposing to FIR on both color light. Emission of ammonia and lower hydrocarbons from litter were not different from each color but there was a decrease by exposing to FIR regardless of light color. The level of blood aspartate aminotransferase (AST) tends to be decreased under green color than white color, and this tendency becomes more pronounced as exposing to FIR. Therefore significantly increased under white color without FIR than green color with FIR (P<0.05). The levels of albumin and immunoglobulin were not different from each color but there was an increase by exposing to FIR regardless of light color. In conclusion, exposing to Far Infrared Ray (FIR) when broiler raising, there is potential to increase broiler performance because of improvement of bioactivity and raising environment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.16-16
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• 2010

GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.11 no.5
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• pp.608-614
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• 2018

In addition to the diffusion of ICT technology, various protocols of short range wireless communication technology are being applied for efficient information operation. However, due to limitations of short-range wireless communication, communication is not smooth in places where frequency environment is poor, such as frequency confusion and warehouse type factory. When an alternative is needed. The development of LED technology and expansion of infrastructure through LED based visible light communication is attracting attention as an alternative and spreading the usage in wide range now a days. In addition, the infrastructure has been expanded with solar panels in response to the development of smarthome built-in with renewable energy. In this situation, visible light communication using PD has been limitedly applied in a near environment where the receiving angle of the PD and the ambient light ensure the LoS and the influence of the ambient light is small. In order to solve this problem, we have implemented visible light communication using LED lighting with large current infrastructure and solar panel with large receiving area, and proposed a circuit for restoring accurate data even in ambient light. Through this study results, it is expected that visible light communication can be more widely used and this result used as the base data for visible light communication research using the solar panel as the receiver.