• 제목/요약/키워드: light wavelength

검색결과 1,436건 처리시간 0.027초

Photocurrent Characteristics of Gate/Body-Tied MOSFET-Type Photodetector with High Sensitivity

  • Jang, Juneyoung;Choi, Pyung;Lyu, Hong-Kun;Shin, Jang-Kyoo
    • Journal of Sensor Science and Technology
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    • 제31권1호
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    • pp.1-5
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    • 2022
  • In this paper, the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector with high sensitivity in the 408 nm - 941 nm range are presented. High sensitivity is important for photodetectors, which are used in several scientific and industrial applications. Owing to its inherent amplifying characteristics, the GBT MOSFET-type photodetector exhibits high sensitivity. The presented GBT MOSFET-type photodetector was designed and fabricated via a standard 0.18 ㎛ complementary metal-oxide-semiconductor (CMOS) process, and its characteristics were analyzed. The photodetector was analyzed with respect to its width to length (W/L) ratio, bias voltage, and incident-light wavelength. It was confirmed experimentally that the presented GBT MOSFET-type photodetector has over 100 times higher sensitivity than a PN-junction photodiode with the same area in the 408 nm - 941 nm range.

Fault Analysis of Transformer using Tunable Infrared Gas Sensors (가변 파장형 적외선 센서를 이용한 변압기 결함 진단)

  • Gun-Ho Lee;Seung-Hwan Yi
    • Journal of Sensor Science and Technology
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    • 제32권1호
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    • pp.55-61
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    • 2023
  • The objective of this study is to determine the concentrations of mixed gases by establishing a diagnosis method of a transformer using tunable-wavelength optical infrared sensors. Absorption of infrared light by methane, acetylene, and ethylene gases injected is measured from the outputs of the infrared sensors. Regression analysis equations of the gas concentrations are acquired from their respective measured absorption. The obtained concentrations are as follows: -3-9 % errors above 600 ppm(methane), 3 % errors above 1200 ppm(acetylene), and 10 % errors above 500 ppm(ethylene). The concentration inference equations obtained using the individual gases are applicable when the absorption wavelength bands do not overlap. The results of the fault analysis of a transformer using the Duval triangle method and the tunable infrared gas sensors are as follows: temperature faults with -1-1% errors and energy faults with -7-7 % errors.

Growth Characteristics and Functional Analysis of Salvia miltiorrhiza Bunge by Artificial Light Sources (인공광원별 단삼의 생육특성 및 기능성 평가)

  • Choi, Hye Lim;Seo, Ji Won;Hwang, Myeong Ha;Lee, Hwa Il;Kim, Myong Jo;Yu, Chang Yeon
    • Korean Journal of Medicinal Crop Science
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    • 제28권3호
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    • pp.200-208
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    • 2020
  • Background: Salvia miltiorrhiza Bunge has been used in traditional medicine. The type of light source has an effect on the growth properties and composition of functional compounds in plants. In this study, we analyzed the effects of different artificial light sources on the growth characteristics as well as antioxidant and antimicrobial activities of S. miltiorrhiza. Methods and Results: Seedlings of S. miltiorrhiza were grown under various artificial light sources, including fluorescent light (FL), light emitting diode (LED), and microwave electrodeless light (MEL), for 8 weeks. Growth characteristics were the best in plants treated with MEL. DPPH scavenging activity of the shoot was more pronounced with the FL treatments, while the roots were more active in plants grown under single wavelength lights (i.e., blue and red LEDs). Among the different light source treatments, the blue LED resulted in a higher total phenolic content in the plants. Furthermore, growing plants growth under the red LED enhanced their total flavonoid content. Notably, the antimicrobial properties of plants varied significantly between light source treatments in this study. Except for E. coli, all the tested microorganisms were susceptible to the plant extracts. Conclusions: The type of light source may be an important parameter for the enhancement of plant growth and functional compounds in S. miltiorrhiza.

Measurements and characterizations of cerenkov light in fiber-optic radiation sensor irradiated by high energy electron beam (고에너지 전자선 측정을 위한 광섬유 방사선 센서에서의 체렌코프 빛 측정 및 분석)

  • Jang, Kyoung-Won;Cho, Dong-Hyun;Jeong, Sun-Cheol;Jun, Jae-Hun;Lee, Bong-Soo;Kim, Sin;Cho, Hyo-Sung;Park, Sung-Yong;Shin, Dong-Ho
    • Journal of Sensor Science and Technology
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    • 제15권3호
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    • pp.186-191
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    • 2006
  • In general, Cerenkov light is produced by a charged particle that passes through a medium with a velocity greater than that of visible light. Although the wavelength of Cerenkov light is very broad, the peak is in the almost visible range from 400 to 480 nm. Therefore, it always causes a problem to detect a real light signal that is generated in the scintillator on the fiber-optic sensor tip for dose measurements of high-energy electron beam. The objectives of this study are to measure, characterize and remove Cerenkov light generated in a fiber-optic radiation sensor tip to detect a real light signal from the scintillator. In this study, the intensity of Cerenkov light is measured and characterized as a function of incident angle of electron beam from a LINAC, and as a function of the energy of electron beam. As a measuring device, a photodiode-amplifier system is used, and a subtraction method using a background optical fiber is investigated to remove Cerenkov light.

Change of fluorescence in ambers according to artificial aging (인공열화에 따른 호박(amber)의 형광특성 변화)

  • Park, Jong-Seo;Lim, Yu-Jin
    • Analytical Science and Technology
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    • 제25권3호
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    • pp.197-206
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    • 2012
  • Ambers are composed of polymer molecules which contain aromatic moieties such as benzene, naphthalene, phenanthrene and anthracene. They emit fluorescence when irradiated with ultraviolet light, which was used for confirming an amber. The fluorescence of amber, however, tends to decrease as the surface of amber is weathered with light, heat, oxygen for a long time. In this study, the reliability of confirming amber with its fluorescence by measuring the changes of fluorescence after artificial aging. Aging factors were UV light (${\lambda}$=340 nm), oxygen with heat (100%, $90^{\circ}C$) and heat ($90^{\circ}C$) and aging time was for 5, 15, 30 and 60 days, respectively. In the excitation and emission spectra of amber, the intensity decreased and the maximal wavelength was shifted to longer wavelength with artificial aging time. Especially, there was a drastic decrease in the intensity of spectra to 1.7% of initial value after 60 days aging under oxygen with heat. Only in Colombian amber there showed an increase of fluorescence intensity for a certain aging time, which could be explained by the production of aromatic ring in the presence of light and heat. Conclusively, the fluorescence can be lessened by the natural weathering with light, heat and oxygen and it is not accurate to recognize amber just with UV irradiation method.

Morphology and Leaf Color Changes of Grafted Tomato Plug Seedlings Irradiated by Different Wavelengths of Photosynthetically Active Radiation during Low Light Irradiation Storage (저광 조사 저온 저장 중 PAR의 각 파장에 의한 토마토 플러그 묘의 형태 및 엽색의 변화)

  • Park, Jong-Seok;Fujiwara, Kazuhiro
    • Journal of Bio-Environment Control
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    • 제17권4호
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    • pp.283-287
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    • 2008
  • To investigate the effects of different wavelengths of photosynthetically active radiation on the morphology and leaf color changes of a single tomato (Lycopersicon esculentum) seedling, we stored the seedling at $10{\pm}0.5^{\circ}C$ under eight different wavelengths (peak wavelengths; 405, 450, 505, 545, 600, 645, 680, and 700 nm) with a constant photosynthetic photon flux of $3{\mu}mol\;m^{-2}s^{-l}$ for 28 d. Under the 405, 450, and 505 nm wavelength conditions, the leaves of the seedlings showed vigorous shape with an upright morphology. Rachis elongation was suppressed and hence compact appearance was observed under the 450 and 505 urn conditions. Although the difference in leaf color between before storage and on 28 days after storage was observed under all wavelength conditions, the 405 and 700 um irradiations changed the leaf color to light green. Application of light-emitting diode (LED) light irradiated from around 450 to 545 nm can contribute to vigorous shape with an upright morphology of tomato seedlings during low light irradiation-low temperature storage.

Inhibition of Cell Growth and Mitochondrial Activity in Human Gingival Fibroblasts by LED-Generated Red Light Exposure

  • Kim, Hee-Jeong;Hwang, Jung-Min;Kwak, So-Yeong;Kim, Jong-Ghee;Jeon, Young-Mi;Lee, Jeong-Chae
    • International Journal of Oral Biology
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    • 제34권4호
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    • pp.185-190
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    • 2009
  • This study examined the effects of red light generated from a light emitting diode (LED) upon proliferation and mitochondrial stress in human gingival fibroblasts (hGFs). Cells were exposed to LED-generated red light at a clinically relevant intensity and distance with a 610-630 nm wavelength for various times (0-48 min). At different exposure times, cells were processed for the analysis of succinate dehydrogenase (SDH) activity, proliferation, mitochondrial membrane potential (MMP) and cytotoxicity. Cell cycle progression was also investigated by flow cytometry after staining with propidium iodide. Red light exposure was found to inhibit SDH activity and DNA synthesis in hGFs in a time-dependent manner. Light exposure also reduced the MMP levels in these cells and this was closely associated with a $G_0/G_1$ arrest. In contrast, exposure of hGFs to red light for 48 min led to a dramatic loss of MMP with an attendant increase in cytotoxicity. These findings demonstrate that LED-generated red light may cause mitochondrial stress and growth inhibition in hGFs during tooth whitening therapy, depending on the length of the exposure.

Supplementary Blue and Red Radiation at Sunrise and Sunset Influences Growth of Ageratum, African Marigold, and Salvia Plants

  • Heo, Jeong-Wook;Lee, Yong-Beom;Bang, Hea-Son;Hong, Seung-Gil;Kang, Kee-Kyung
    • Korean Journal of Environmental Agriculture
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    • 제30권4호
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    • pp.382-389
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    • 2011
  • BACKGROUND: Light-emitting diodes (LEDs) with lower electric cost and the specific wavelength have been considering as a novel light source for plant production in greenhouse conditions as well as in a closed culture system. Supplementary lighting for day-length extension was considered as light intensity, light quality, and/or photoperiod control on plant growth and development. Effects of supplementary blue or red LED radiation with lower light intensity on growth of Ageratum (Ageratum houstonianum Mill., cv. Blue Field), African marigold (Tagetes erecta L., cv. Orange Boy), and Salvia (Salvia splendens F. Sello ex Ruem & Schult., cv. Red Vista) were discussed during sunrise and sunset twilight in the experiment. METHODS AND RESULTS: Supplementary lighting by blue and red LEDs for 30 (Treatment B30; R30) or 60 (Treatment B60; R60) min. per day were established in greenhouse conditions. Photosynthetic photon flux for supplementary radiation was kept at $15{\mu}mol\;m^{-2}\;s^{-1}$ on the culture bed. Natural condition without supplementary light was considered as a control. The highest shoot and root dry weights were shown in African marigold exposed by red light for 60 min. per day. Supplementary blue and red lighting regardless of the radiation time significantly stimulated development of lateral branches in African marigold. Stem growth in Ageratum and Salvia seedlings was significantly promoted by red radiation as well as natural light. CONCLUSIONS: Extending of the radiation time at sunrise and sunset twilight using LEDs stimulated reproductive growth of flowering plant species. Different characteristics on growth under supplementary blue or red lighting conditions were also observed in the seedlings during supplementary radiation.

Optical Properties of Silicon Oxide (SiOx, x<2) Thin Films Deposited by PECVD Technique (PECVD 방법으로 증착한 SiOx(x<2) 박막의 광학적 특성 규명)

  • Kim, Youngill;Park, Byoung Youl;Kim, Eunkyeom;Han, Munsup;Sok, Junghyun;Park, Kyoungwan
    • Korean Journal of Metals and Materials
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    • 제49권9호
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    • pp.732-738
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    • 2011
  • Silicon oxide thin films were deposited by using a plasma-enhanced chemical-vapor deposition technique to investigate the light emission properties. The photoluminescence characteristics were divided into two categories along the relative ratio of the flow rates of $SiH_4$ and $N_2O$ source gases, which show light emission in the broad/visible range and a light emission peak at 380 nm. We attribute the broad/visible light emission and the light emission peak to the quantum confinement effect of nanocrystalline silicon and the Si=O defects, respectively. Changes in the photoluminescence spectra were observed after the post-annealing processes. The photoluminescence spectra of the broad light emission in the visible range shifted to the long wavelength and were saturated above an annealing temperature of $900^{\circ}C$ or after 1 hour annealing at $970^{\circ}C$. However, the position of the light emission peak at 380 nm did not change at all after the post-annealing processes. The light emission intensities at 380 nm initially increased, and decreased at annealing temperatures above $700^{\circ}C$ or after 1 hour annealing at $700^{\circ}C$. The photoluminescence behaviors after the annealing processes can be explained bythe size change of the nanocrystalline silicon and the density change of Si=O defect in the films, respectively. These results support the possibility of using a silicon-based light source for Si-optoelectronic integrated circuits and/or display devices.

Widely-tunable high-speed wavelength converter based on four-wave mixing in a semiconductor-fiber ring laser (고리형 반도체-광섬유 레이저에서 4광파 혼합에 의한 광대역 및 고속 파장 변환기)

  • Choi, kyoung-Sun;Seo, Dong-Sun;Lee, Yoo-Seung;Ki, Ho-Jin;Jhon, Young-Min;Lee, Seok;Kim, Dong-Hwan
    • Korean Journal of Optics and Photonics
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    • 제13권1호
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    • pp.15-20
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    • 2002
  • We demonstrate a widely-tunable wavelength converter based on four-wave mixing in a semiconductor-fiber ring laser with no external pump light. Applying 10 GHz short pulses at -8 dBm as a probe signal, we achieve continuous wavelength tuning over the semiconductor optical amplifier gain-bandwidth reaching 30 nm down- and 17 m up-wavelength conversion. In addition to the wide tuning capability, the converter shows high-speed conversion and low saturation power capabilities.