• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.23-23
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• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• 한국광학회지
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• 제32권2호
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• pp.49-54
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• 2021

본 논문에서는 고출력 광섬유 레이저의 핵심 부품인 대구경 광섬유 엔드캡을 제작하는 장비를 설계 및 제작하였으며, 제작장비를 이용하여 대구경 광섬유 엔드캡을 제작하였다. 대구경 광섬유 엔드캡 제작장비는 레이저 광을 조사하여 접속 열원으로 사용하기 위한 CO2 레이저 광원부, 대구경 광섬유와 엔드캡의 위치를 이송하기 위한 정밀 스테이지 조립체, 스테이지 조립체와 연동되어 융착 시 정렬에 사용되는 비전 시스템으로 구성되어 있다. 레이저 광원의 출력은 스테이지 조립체와 연동되어 출력을 제어하며, 비전 시스템으로 대구경 편광유지 광섬유의 편광축을 정렬할 수 있도록 제작되었다. 자체 제작한 장비를 이용하여 클래드 직경이 400 ㎛인 대구경 편광유지 광섬유와 10(W)×5(D)×2(H) ㎣의 엔드캡을 레이저 융착하여 대구경 광섬유 엔드캡을 제작하였다. 제작된 대구경 광섬유 엔드캡의 신호광 삽입손실, 소광률 및 빔품질(M2)은 각각 0.6%, 16.7 dB, M2x=1.21, M2y=1.22로 측정되었다.

• 공업화학
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• 제19권6호
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• pp.661-667
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• 2008

본 연구에서는 LCD 백라이트용 휘도향상 편광필름으로 사용하기 위해, 콜레스테릭 액정(CLC)을 합성하여 네미틱 액정과 혼합한 다음 이들이 충진된 모듈을 제작하였다. 광확산필름에 의해 면광원화된 빛을 통과시킬 때, LCD 백라이트상에서 이들의 투과광 증폭 및 편광능력에 대한 특성을 연구하였다. 합성된 콜레스테릭 액정의 특성은 UV/Visible 스펙트럼과 편광현미경(POM) 등으로 평가하였다. 여러 종류의 선형 카르복실산을 콜레스테롤 분자에 도입하여 콜레스테릭 메소젠 사이의 유연격자를 이루도록 유도하여 각 층에서 일정한 방향성을 유지하도록 하였다. 또한 CLC필름을 적층하여 가시광선대에서 편광능력, 휘도향상 및 투과파장영역을 넓히고 백라이트 유니트의 밝기를 향상시키는 모듈로 적용할 수 있었다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.573-576
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• 2005

A compact linear and angular displacement measurement device was developed by combining a Michelson interferometer and an autocollimator to characterize the movement of a precision stage. A Michelson interferometer and an autocollimator are typical devices for measuring linear and angular displacement, respectively. By controlling the polarization of reflected beam from the target mirror of the interferometer, some part of light was retro-reflected to the light source and the reflected beam was used for angle measurement. The interferometer and the autocollimator use the same optic axis and the target mirror can be easily and precisely aligned orthogonal to the optic axis by monitoring the autocollimator s signal. The autocollimator was designed for angular resolution of 0.1 arcsec and dynamic range of 60 arcsec. The nonlinearity error of interferometer was minimized by trimming the gain and offset of the photodiode signals. Through the experiments, we evaluate the performance of measurement device and discuss its applications.

• 전기학회논문지
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• 제59권12호
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• pp.2245-2249
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• 2010

The physical properties of the LB films with merocyanine dyes have been published and attract attention due to the possibility of molecular structure control. The evaluation of the thin films was focused for the purpose of molecular structure control. The molecular structure in the case of the thin films with dyes can be examine by optical absorption spectra measurements. In the result measured by optical absorption spectra, the $[DX]_{1-x}[DO]_x$ LB films shows a large in-plane anisotropy and the transition dipole moment of red-shifted band is preferentially oriented perpendicular to the dipping direction of the film, while that of the blue-shifted band prefers the dipping direction. The spectrum for $0_{\circ}$, $90_{\circ}$-polarized light coincides with the spectrum for non-polarized light and also with the spectrum was observed in the LB film deposited using a fresh solution. These results show that the aging process does not cause a structural change in chromophore but a change in the degree of molecular orientation. In the results, study of the merocyanine dyes LB films using optical absorption spectra would an interesting problem of absorbance peak shifts and mixed components.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 춘계종합학술대회
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• pp.370-373
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• 2003

Superluminescent diodes(SLDs)는 광섬유 자이로스코프, OTDR, 중단거리 광통신시스템과 같은 광측정 시스템으로의 응용에 있어서 최적의 광원이다. SLD의 넓은 스펙트럼 특성은 Rayleigh 후방산란 잡음, 편광잡음, 광섬유 자이로 스코프에서의 비선형 Ken 효과에 의한 bias offset을 감소시킨다. 본 논문에서 레이징을 억제하기 위해서 윈도우 영역을 갖고 측방향으로 경사진 SCH(Separate Confinement Heterostructure)-SLD를 제안하였다. 제작된 소자의 출력은 펄스 구동 200mA, $25^{\circ}C$에서 11mW였다. 그리고, 120mA에서 수평 및 수직 방사각은 31$^{\circ}$$\times$38$^{\circ}$였다.

• 조명전기설비학회논문지
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• 제20권9호
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• pp.103-109
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• 2006

This research is contents about output characteristic of optic current sensor that use faraday effect. optic current sensor used in an experiment is consisted of three parts.(1) Source of light used laser diode of 1310[nm].(2) Sensor section manufactured circularly according to gas insulated switchgear. And $9/125[{\mu}m]$ standard single mode optical fiber for communication was installed winding 20 [turn] on sensor section core surroundings of diameter 31 [cm].(3) Electrical signal of PD(Photo detector) is collected using NI company's 16bit DAQ board via terminal block. Collected data analyzed by different three signal processing methods. NI company's $Labview^{TM}$ was used to signal processing software. As a result, In signal processing of optic current sensor, we could know that noise greatly more influences the error generation than fluctuation of light intensity. also, 1 class CT(current transformer) manufacture that have error rate less than 1[%] was available by removing these

• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.228-233
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• 2010

We studied the optical characteristics correlated with low dielectric constants of low-k SiOCH thin films through ellipsometry. The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The Si-O-CHx, Si-O-Si, Si-CHx, CHx and Si-H bonding groups were specified by FTIR spectroscopic spectra, and the groups coupled with the nano-porous structural organic/inorganic hybrid-type of SiOCH thin films which has extremely low dielectric constant close to 2.0. The structural groups includes highly dense pore as well as ions in SiOCH thin films affecting to complex refraction characteristics of single layer on the p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-light source in the range from 190 nm to 2100 nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.

• 한국기계가공학회지
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• 제12권5호
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• pp.16-22
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• 2013

A two-dimensional photonic crystal structure was investigated using a roll-to-roll nanoreplication and physical vapor deposition processes for the inexpensive enhanced fluorescence substrate which is not sensitive to the polarization directions of excitation light source. An 8 inch silicon master having nano dot array with a diameter of 200 nm, a height of 100 nm and a pitch of 400 nm was prepared by KrF laser scanning lithography and reactive ion etching processes. A flexible polymer mold was fabricated by flat type UV replication process and a deposition of 10 nm nickel layer as an anti-adhesion layer. A roll mold was prepared by warping the flexible polymer mold on an aluminum roll base and a roll-to-roll UV replication process was carried out using the roll mold. After the deposition of ~ 100 nm $TiO_2$ layer on the replicated nano dot array, a 2 dimensional photonic crystal structure was realized with a resonance wavelength of 635 nm for both p- and s-polarized light sources.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.791-795
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• 2000

Amorphous chalcogenide glasses have a wide variety of light-induced effects. In this study, we have investigated the diffraction efficiency of chalcogenide. As$_{40}$ Ge$_{10}$ Se$_{15}$ S$_{35}$ thin films by the various applied electric fields. The holographic grating in these thin films has been formed using a linearly polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two method of applied electric field in the perpendicular and parallel to the direction of inducing beam. We obtained that properties of diffraction efficiency in the two methods of applied electric field. The result is shown that the diffraction efficiency of parallel electric field is 285% increase, η=1.1$\times$10$^{-3}$ and the diffraction efficiency of perpendicular electric field is 80% decrease, η=9.83$\times$10$^{-5}$ . Also, we have investigated the anisotropy property on chalcogenide thin films by the electric field effects.