• 한국전기전자재료학회논문지
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• 제33권3호
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• pp.194-200
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• 2020

Perylene bisimide derivatives are developed for red organic phosphor because of their advantages, such as excellent luminous efficiency and high thermal stability. Despite these advantages, they have poor solubility characteristics in organic solvents and short emission wavelength as red organic phosphor for hybrid light-emitting diodes (LEDs). In this study, we prepared terrylene bisimide using a coupling reaction and swallow-tail imide group, which has excellent solubility. The structures and properties of swallow-tail terrylene bisimide (9C) were analyzed using ¹H-nuclear magnetic resonance (¹H-NMR), Fourier-transform infrared (FT-IR), UV/Vis spectroscopy, and thermal gravimetric analysis (TGA). The maximum absorption wavelength of (9C) in the UV/Vis spectrum was 647 nm, and the maximum emission wavelength was 676 nm. In the TGA, (9C) demonstrated good thermal stability with less than 5 wt% weight loss up to 415℃. In the solubility test, (9C) has a good solubility of more than 5 wt% in chloroform and dichloromethane. When the compounds (9C) were mixed with PMMA (polymethly methacrylate), the films showed peaks at 680 nm in the PL spectra. The results verify the suitability of (9C) as a red organic phosphor for hybrid LEDs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.359-359
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• 2012

Trivalent rare-earth ($RE^{3+}=Eu^{3+}\;and\;Tb^{3+}$) ions activated $CaGd_4O_7$ phosphors were synthesized by a sol-gel process. After annealing at $1,500^{\circ}C$, the XRD patterns of the phosphor confirmed their monoclinic structure. The photoluminescence excitation spectra of $Eu^{3+}$ and $Tb^{3+}$ doped $CaGd_4O_7$ phosphor shows the broad-band excitations in the shorter wavelength region due to charge transfer band of completely filled $O^{2-}$ to the partially filled $Eu^{3+}$ ions and f-d transitions of $Tb^{3+}$ ions, respectively. The photoluminescence spectra show that the reddish-orange ions and green emission for $Eu^{3+}$ and $Tb^{3+}$ ions, respectively. Owing to the importance of thermal quenching property in the technological parameters, the temperature-dependent luminescence properties of these phosphors were measured for examing the suitability of their applications in the development of light emitting diodes (LEDs). In addition to those measurements, the cathodoluminescence properties were examined by changing the acceleration voltage and filament current. The calculated chromaticity coordinates of these phosphors were close proximity to those of commercially available phosphors for LED and field emission display devices.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.24-24
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• 2003

Research activity in the III-V nitrides materials system has increased markedly in the past several years ever since high-brightness blue light-emitting diodes (LEDs) became commercially available. Despite of excellent optical properties of the GaN, however, inherently poor thermal property of the sapphire used as a substrate material n these devices may lead to thermal degradation of devices, especially during their high power operation. Therefore, dependable thermal analysis and packaging schemes of GaN-based LEDs are necessary for solid lighting applications under high power operation. In this paper, emphasis will be placed upon thermal design of GaN-based LEDs. Thermal measurements of LEDs on chip and packaging scale were performed using the liquid crystal thermographic technology and micro thermocouples for different bias conditions. By a series of optical arrangement, hot spots with specific transition temperatures were obtained with increasing input power. Thermal design of LEDS was made using the finite element method and analytical unit temperature profile approach with optimal boundary conditions. The experimental results were compared to the simulated data and the results agree well enough for the establishment of dependable prediction of thermal behavior in these devices. The paper will present a more detailed understanding of the thermal analysis of the GaN-based blue and white LEDs for high power applications.

• 한국광학회지
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• 제13권2호
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• pp.128-133
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• 2002

최근 주목을 받고 있는 고분자 발광다이오드의 개발에 있어서, 발광고분자의 Photoluminescence(PL)와 Electroluminescence (EL) 양자효율 측정은 소자의 성능개선 연구 등에 있어서 가장 핵심적인 요소 중 하나로 여겨진다. 이러한 이유에서 본 연구에서는 잘 알려진 발광고분자인 Poly(2-methoxy-5(-(2-ethyl-hexyloxy)- 1,4-phenylenevinylene) (MEH- PPV)를 이용하여 시편을 제작하고, 적분구 측정법을 이용하여 이의 P교라 EL 양자효율을 구하였다. 그 결과 본 연구진이 개발한 MEH-PPV의 PL 양자효율은 8$\pm$2%로 측정되었는데, 이는 세계적으로 알려져 있는 ～9%의 결과에 거의 접근함을 보였다. 한편, 이 물질을 이용하여 고분자 발광다이오드를 제작한 결과, 이의 EL양자효율은 0.02 1m/W로 측정되었다. 본 연구를 통하여 확립된 발광고분자의 양자효율 측정법은 국내의 유기발광소자 연구에 큰 기여를 하리라 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.116-116
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• 2000

질화물 반도체는 LED, LD, Transistor, 그리고 Photodetector 등 광소자 및 전자소자를 실현할 수 있는 소재로써 최근에 각광 받고 있으며, 또한 국·내외적으로 연구가 활발히 진행되고 잇다. 질화물 발광 다이오드 제작에는 소자의 효율과 수명시간의 향상을 위하여 질화물 반도체와 금속과의 접합시 고 품질의 오믹 접합이 필수적이다. 특히 p-형 GaN의 경우에는 높은 정공 농도를 갖는 p-형 GaN를 얻기가 어렵고 GaN의 일함수에 비하여 높은 일함수를 갖는 금속이 없기 때문에 매우 낮은 접합 저항을 가지며 안정성이 매우 우수한 금 접합을 얻기가 어렵다고 알려져 있다. 또한, GaN 계열의 발광 다이오드는 일반적으로 표면 발광 다이오드 형태로 제작되기 때문에 p-형 GaN 층의 오믹 접촉으로 사용되는 금속의 전기적 특성뿐만 아니라 발광 다이오드의 활성층에서 발광되어 나오는 빛에 대한 투과도 또한 우수하여야 발광 다이오드의 효율이 우수해진다. 본 연구에서는 p-형 GaN층의 접합 금속으로 Pt(80nm)과 Ni(5nm)/Au(7nm)를 사용하여 InGaN/GaN 다중양자우물 구조의 발광 다이오드를 제작하여 전기적 특성 및 발광효율을 측정하였다. 그리고, Pt(80nm)과 p-형 GaN와의 접합시 온도 변화에 따른 전기적 특성을 TLM 방법으로 조사하고, 가시광선 영역에서의 빛에 대한 투과도를 UV/VIS spectrometer, X-ray reflectivity, 그리고 Atomic Force Microscopy 등을 이용하여 분석하였다.

• 한국응용과학기술학회지
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• 제16권4호
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• pp.307-311
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• 1999

Interfacial properties of electrode and organic thin layer is one of the most important factor in performing a Light Emitting Diodes(LED). Phthalocyanine copper was used as a buffer layer to improve interface characteristic, so that device efficiency was improved. In this study, LEDs were fabricated as like structures of Indium-Tin-Oxide (ITO) / N,N' -Diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) / 8-Hydroxyquinoline aluminum(Alq) / Aluminum(Al) and Indium-Tin-Oxide(ITO) / N,N'-Diphenyl-N,N' -di(m-tolyl)-benzidine(TPD) / 2-(4-Biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole(PBD) / Aluminum(Al). In these devices, CuPC was layered at electrode/organic layer interface. As position is changing and thickness is changing, devices showed characteristic luminescence efficiency and luminescence inensity respectively. We showed in this study that luminescence efficiency was improved with CuPC layer in LEDs. The efficiency of device with layer CuPC is higher than that of 2 layer CuPC. However, the luminescence of 2 layer CuPC device got higher value.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.312-312
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• 2013

GaN based light emitting diodes (LEDs) are important devices that are being used extensively in our daily life. For example, these devices are used in traffic light lamps, outdoor full-color displays and backlight of liquid crystal display panels. To realize high-brightness GaN based LEDs for solid-state lighting applications, the development of p-type ohmic electrodes that have low contact resistivity, high optical transmittance and high refractive index is essential. To this effect, indiumtin oxide (ITO) have been investigated for LEDs. Among the transparent electrodes for LEDs, ITO has been one of the promising electrodes on p-GaN layers owing to its excellent properties in optical, electrical conductivity, substrate adhesion, hardness, and chemical inertness. Sputtering and e-beam evaporation techniques are the most commonly used deposition methods. Commonly, ITO films on p-GaN by sputtering have better transmittance and resistivity than ITO films on p-GaN by e-bam evaporation. However, ITO films on p-GaN by sputtering have higher specific contact resistance, it has been demonstrated that this is due to possible plasma damage on the p-GaN in the sputtering process. In this paper, we have investigated the advanced sputtering using plasma damage-free p-electrode. Prepared the ITO films on the GaN based LEDs by e-beam evaporation, normal sputtering and advanced sputtering. The ITO films on GaN based LEDs by sputtering showed better transmittance and sheets resistance than ITO films on the GaN based LEDs by e-beam evaporation. Finally, fabricated of GaN based LEDs by using advanced sputtering. And compared the electrical properties (measurement by using C-TLM) and structural properties (HR-TEM and FE-SEM) of ITO films on GaN based LEDs produced by e-beam evaporation, normal sputtering and advanced sputtering. As a result, It is expected to form plasma damage free-electrode, and better light output power and break down voltage than LEDs by e-beam evaporation and normal sputter.

• 한국세라믹학회지
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• 제44권3호
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• pp.147-151
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• 2007

An improvement for the efficiency of the $Sr_{2}SiO_{4}:Eu$ yellow phosphor under the $450{\sim}470\;nm$ excitation range have been achieved by adding the co-doping element ($Mg^{2+}\;and\;Ba^{2+}$) in the host. White LEDs were fabricated through an integration of an blue (InGaN) chip (${\lambda}_{cm}=450\;nm$) and a blend of two phosphors ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) in a single package. The InGaN-based two phosphor blends ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) LEDs showed three bands at 450 nm, 550 nm and 640 nm, respectively. The 450 nm emission band was due to a radiative recombination from an InGaN active layer. This 450 nm emission was used as an optical transition of the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor. As a consequence of a preparation of white LEDs using the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor yellow phosphor and CaS:Eu red phosphor, the highest luminescence efficiency was obtained at the 0.03 mol $Ba^{2+}$ concentration. At this time, the white LEDs showed the CCT (5300 K), CRI (89.9) and luminous efficacy (17.34 lm/W).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.172-173
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• 2012

Currently GaN based LED is known to show high internal or external efficiency at low current range. However, this LED operation occurs at high current range and in this range, a significant performance degradation known as 'efficiency droop' occurs. Auger process, carrier leakage process, field effect due to lattice mismatch and thermal effects have been discussed as the causes of loss of efficiency, and these phenomena are major hindrance in LED performance. In order to investigate the main effects of efficiency loss and overcome such effects, it is essential to obtain relative proportion of measurements of internal quantum efficiency (IQE) and various radiative and nonradiative recombination processes. Also, it is very important to obtain radiative and non-radiative recombination times in LEDs. In this research, we measured the IQE of InGaN/GaN multiple quantum wells (MQWs) LEDs with PSS and Planar substrate using modified ABC equation, and investigated the physical mechanism behind by analyzing the emission energy, full-width half maximum (FWHM) of the emission spectra, and carrier recombination dynamic by time-resolved electroluminescence (TREL) measurement using pulse current generator. The LED layer structures were grown on a c-plane sapphire substrate and the active region consists of five 30 ${\AA}$ thick In0.15Ga0.85N QWs. The dimension of the fabricated LED chip was $800um{\times}300um$. Fig. 1. is shown external quantum efficiency (EQE) of both samples. Peak efficiency of LED with PSS is 92% and peak efficiency of LED with planar substrate is 82%. We also confirm that droop of PSS sample is slightly larger than planar substrate sample. Fig. 2 is shown that analysis of relation between IQE and decay time with increasing current using TREL method.

• 구강회복응용과학지
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• 제35권3호
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• pp.160-169
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• 2019

목적: 이번 연구의 목적은 정적인 방법과 동적인 방법으로 형성된 지르코니아 표면에 부착된 바이오필름에 대한 LED 칫솔의 항균 효과를 평가하고자 하였다. 연구 재료 및 방법: 구강 바이오필름을 형성하기 위해 직경 12 mm, 두께 2.5 mm의 지르코니아 디스크를 24-well plate(정적 방법)와 Center for Disease Control and Prevention (CDC) biofilm reactor (동적 방법)에 디스크를 넣어 바이오필름을 형성하였다. 디스크는 아무 처치도 하지 않은 대조군, 상용화된 광역학(PDT) 키트, 치솔질(brushing) 단독, LED 치솔군, LED 치솔과 에리스로신을 같이 적용한 군, 이렇게 5개 그룹으로 구성하였다. 각 군별 처치 후, 개별 디스크를 시험관에 넣고 60 초 동안 vortexing하여 세균을 분리한 후, 분리된 세균 용액을 선택 배지를 이용하여 살아있는 세균 수를 확인한 후 실험 방법에 따른 항균 효과를 계측하였고, 주사전자현미경(SEM)을 통하여 세균의 형태 변화를 관찰하였다. 결과: 바이오필름의 형성과 구성비는 동적인 방법과 정적인 방법에 따른 차이는 관찰되지 않았다. 대조군과 실험군간에 세균의 생존률에 유의한 차이가 있었다(P < 0.05). LED 치솔과 에리스로신을 같이 적용한 군에서 가장 높은 항균 효과가 관찰되었다(P < 0.05). 주사전자현미경 사진상에서 광역학치료군과, LED 치솔군, LED 치솔과 에리스로신을 같이 적용한 군은 세균의 형태 변화가 관찰되었으나, 대조군과 치솔질 단독 사용군에서는 세균의 형태 변화가 관찰되지 않았다. 결론: 이번 연구 결과 지르코니아 표면에 부착된 바이오필름을 효과적으로 제거하는 방법으로 LED 치솔과 에리스로신을 같이 적용하는 것이 추천된다.