• Title/Summary/Keyword: light emitting

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Tandem Organic Light-Emitting Devices Having Increased Power Efficiency

  • Liao, Liang-Sheng;Klubek, Kevin P.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1015-1018
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    • 2008
  • Tandem organic light-emitting diodes (OLEDs) do not always improve power efficiency over their conventional OLED counterparts. When a tandem OLED utilizes optimized EL units, increased power efficiency can only be achieved if the intermediate connector in the device has excellent charge injection capability.

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Development of an Inspection System of Contact Light Emitting Device for Quality Control

  • Lee, Jun-Ho;Kwon, Hyung-Kee;Ryu, Young-Kee
    • 제어로봇시스템학회:학술대회논문집
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    • 2001.10a
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    • pp.118.3-118
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    • 2001
  • CLED (Contact Light Emitting Device) has three layers consisting of a transparent electrode, a light emitting layer and a substrate. When the substrate of the CLED comes in contact with a fingerprint under AC input voltage, it makes an electric field between the fingerprint and the device. Due to the electric field, the light is emitted along the ridgeline of the fingerprint. The intensity along the ridge on the surface of the CLED increase in proportion to the electric field. To achieve uniform performance of fingerprint verification devices, inspection system of CLED for quality control were required. In this research, we proposed the factors for quality controls such as dimensions of the CLED, uniformity ...

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A Study on the Operating Principle of the Light-emitting and -receiving Part of the Photoelectric Sensitivity Tester (광전식감도시험기의 발광부와 수광부 작동원리에 관한 연구)

  • Yoon, Hun-Ju;Kwon, Seong-Pil;Kim, Hyeong-Gweon;SaKong, Seong-Ho
    • Proceedings of the Korea Institute of Fire Science and Engineering Conference
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    • 2008.04a
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    • pp.151-154
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    • 2008
  • The advanced technical data collected from home and abroad have properly been analyzed, so that they are useful to improve the photoelectric sensitivity tester. The results of this study have quickly been supplied to the related industry. Our research and development team has verified the response characteristics of the light-emitting and -receiving part of the photoelectric sensitivity tester in order to help the local manufacturer to study, develope and produce their photoelectric detectors.

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Electronic Structure of the Tris(8-quinolinolato)aluminum (III) ($Alq_3$) / Ba Interfaces and Light Out-coupling Characteristics of Organic Light-emitting Diodes Based on these Interfaces

  • Kwon, Jae-Wook;Lim, Jong-Tae;Yeom, Geun-Young
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.834-836
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    • 2009
  • We investigated the device performance for organic light-emitting characteristics based on the electron-injecting interfacial characteristics of Ba deposited on tris(8-quinolinolato)aluminum (III) ($Alq_3$) with a change of a Ba coverage. The device performance of organic light-emitting diodes with Ba coverage of 1 nm significantly improved by the lowering of the electron-injecting barrier height that was induced by electronic charge transfer. However, the device with Ba coverage above 1 nm showed poor device performance. The spectroscopic results indicated that the $Alq_3$ molecules started to decompose by the reaction between Ba and the phenoxide moiety of the molecule.

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Synthesis and Characterization of Red Light-Emitting Random Copolymers

  • Lee, Yeong-Beom;Shim, Hong-Ku
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1418-1421
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    • 2009
  • A series of new light-emitting random copolymers with fully conjugated structure was prepared, for the first time through the well-known Gilch polymerization between 1,4-bis(chloromethyl)-2-ethylhexyloxy-5-methoxybenzene and 2,5-bis(bromomethyl)thiophene monomers in different ratios. The synthesized polymers (on thin film) showed the maximum wavelength of UV-visible absorbance and photoluminescence (PL) near 500 nm and near 600 nm, respectively. A single-layer light-emitting diode device, which has a simple ITO (indium-tin oxide)/polymer/Al configuration, was fabricated by spin-coating of polymers and then vacuum evaporation of Al metal. The threshold bias of PMEHPVTVs was in the range of 3.5-10 V. As in the PL spectra, the maximum wavelength of light emission near 600 nm was also shown in electroluminescence (EL) spectra of PMEHPVTVs when the operating voltage was about 7 - 14 V.

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Self-developed Efficiency Measurement System of Organic Light-Emitting Diodes (자체 개발한 유기 발광 소자의 효율 측정 시스템)

  • Han, Wone-Keun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.537-538
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    • 2005
  • A way of measuring an efficiency of organic light-emitting diodes are studied. The efficiency is obtained from the current-voltage-luminance characteristics of the devices. Basically, number of charge carriers are obtained from the current-voltage characteristics, and the number of photons are obtained from the current of Si-photodetector. The organic light-emitting diodes are assumed as a lambertian light source and a program is made for calculating the efficiency. A device structure of ITO/TPD/$Alq_3$/Al is manufactured using thermal-vapor evaporation. This device is set into a measuring system and measured the efficiency. The efficiencies are measured using the lab-made program and commercially available equipments. The obtained values are similar to each other within 10% uncertainty.

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Numerical Study of Enhanced Performance in InGaN Light-Emitting Diodes with Graded-composition AlGaInN Barriers

  • Kim, Su Jin;Kim, Tae Geun
    • Journal of the Optical Society of Korea
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    • v.17 no.1
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    • pp.16-21
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    • 2013
  • In this paper, we report the effect of GaN/graded-composition AlGaInN/GaN quantum barriers in active regions on the electrical and optical properties of GaN-based vertical light emitting diodes (VLEDs). By modifying the aluminum composition profile within the AlGaInN quantum barrier, we have achieved improvements in the output power and the internal quantum efficiency (IQE) as compared to VLEDs using conventional GaN barriers. The forward voltages at 350 mA were calculated to be 3.5 and 4.0 V for VLEDs with GaN/graded-composition AlGaInN/GaN barriers and GaN barriers, respectively. The light-output power and IQE of VLEDs with GaN/graded-composition AlGaInN/GaN barriers were also increased by 4.3% and 9.51%, respectively, as compared to those with GaN barriers.

Burn Wound Successfully Treated with 830-nm Light Emitting Diode Phototherapy Combined with Epidermal Growth Factor Solution

  • Lee, Hae-Jin;Kim, Young Koo
    • Medical Lasers
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    • v.8 no.2
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    • pp.94-96
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    • 2019
  • Burns are one of the most extensive injuries of soft tissues as well as skin, occasionally resulting in extensive, deep wounds and death. Burn wounds can lead to severe physical and psychological distress because of excessive scarring and skin contractures. Treatment of burn wounds has always been a challenging problem and many different methods have been used to treat such injuries. We report here on treating a patient with a burn wound using 830-nm light emitting diode (LED) phototherapy combined with epidermal growth factor (EGF) solution. After five daily sessions of LED with EGF solution treatment, the patient demonstrated nearly complete improvement with no remarkable side effects. We suggest that LED phototherapy combined with EGF solution could be an effective and safe treatment option for treating burn wounds.