• Title/Summary/Keyword: light density

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Optical Effect due to Thickness Variation of Electron Injection Layer in Organic Light-emitting Diodes

  • Lee, Young-Hwan;Lee, Kang-Won;Yi, Keon-Young;Hong, Jin-Woong;Kim, Tae-Wan
    • Transactions on Electrical and Electronic Materials
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    • v.9 no.1
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    • pp.20-23
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    • 2008
  • Organic light-emitting diodes (OLEDs) are attractive because of possible application in display with low-operating voltage, low-power consumption, self-emission and capability of multicolor emission by the selection of emissive materials. To investigated the optical effects, we studied the electrical and optical characteristics due to thickness variation of electron injection materials LiF on organic light-emitting diodes in the ITO (indium-tin-oxide)/N,N'-diphenyl-N, N'-bis(3-methyphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris(8-hydroxyquinoline) aluminum $(Alq_3)/LiF$ layer/Al device. We maintained the thicknesses of TPD and $Alq_3$ layers at 40 nm and 60 nm, respectively. The deposition rates of TPD and $Alq_3$ were in the $1.5{\AA}/s$ under a base pressure of $5{\times}10^{-6}$ Torr. It was found that luminance and luminous efficiency of the device with 0.7 nm LiF layer improve 25 times and 7 times than the device without the LiF layer, respectively.

Indium Tin Oxide-Free Large-Area Flexible Organic Light-Emitting Diodes Utilizing Highly Conductive poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) Anode Fabricated by the Knife Coating Method (나이프 코팅 법으로 제작한 ITO-Free 고전도성 PEDOT:PSS 양극 대면적 유연 OLED 소자 제작에 관한 연구)

  • Seok, JaeYoung;Lee, Jaehak;Yang, MinYang
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.24 no.1
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    • pp.49-55
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    • 2015
  • This paper reports solution-processed, high-efficiency organic light-emitting diodes (OLEDs) fabricated by a knife coating method under ambient air conditions. In addition, indium tin oxide (ITO), traditionally used as the anode, was substituted by optimizing the conductivity enhancement treatment of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films on a polyethylene terephthalate (PET) substrate. The transmittance and sheet resistance of the optimized PEDOT:PSS anode were 83.4% and $27.8{\Omega}/sq$., respectively. The root mean square surface roughness of the PEDOT:PSS anode, measured by atomic force microscopy, was only 2.95 nm. The optimized OLED device showed a maximum current efficiency and maximum luminous density of 5.44 cd/A and $8,356cd/m^2$, respectively. As a result, the OLEDs created using the PEDOT:PSS anode possessed highly comparable characteristics to those created using ITO anodes.

Light-Emitting Properties of Organic Electroluminescent Devices using Zinc Complexes (아연 착체를 이용한 유기 EL 소자의 전계발광 특성)

  • Kim, Hong-Soo;Jeong, Noh-Hee
    • Journal of the Korean Applied Science and Technology
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    • v.20 no.4
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    • pp.316-323
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    • 2003
  • Zinc complexes with bis[2-(o-hydroxyphenyl) naphtol [1,2] oxazolato ligands (ZnPBO-4) and its derivatives (ZnPBO-S) were synthesized, and luminescent properties of these materials were investigated. Both the fluorescent emission band and electroluminescent emission band were discussed based on their ligand structure differences. The emission band found that it strongly depends on the molecular structure of introduced ligand. It was tuned from 446 nm to 491 nm by changing the ligand structures. Spreading of the ${\pi}$-conjugation in 2-(o-hydroxyphenyl) group gives rise to a blue shift. The EL properties also showed good consistency with their differences of ligand structure. Bright-blue EL emission with a maximum luminance of 3,100 $cd/m^2$ at 12V, current density, 575 $mA/m^2$ was obtained from the organic light-emitting diodes (OLEDs) using ZnPBO-4 as emitting layer. It was also found that the newly synthesized materials were suitable to be used as emitting materials in organic EL device.

Study of Deep Blue Organic Light-Emitting Diodes Using Doped BCzVBi with Various Blue Host Materials

  • Kim, Tae-Gu;Oh, Hwan-Sool;Kim, You-Hyun;Kim, Woo-Young
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.2
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    • pp.85-88
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    • 2010
  • Deep blue organic light emitting diodes (OLEDs) were fabricated using 5 wt.% doped BCzVBi with various blue host materials such as NPB, DPVBi, MADN and TPBi. A blue OLED device, using DPVBi as host material, was constructed via NPB ($500\;{\AA}$) / DPVBi:BCzVBi ($200\;{\AA}$) / Bphen ($300\;{\AA}$) / LiF ($20\;{\AA}$) / Al ($1,000\;{\AA}$) and it shows a maximum luminescence of $4,838\;cd/m^2$, a current density of $32.7\;mA/cm^2$, a luminous efficiency of 3.3 cd/A and CIExy coordinates of (0.19, 0.15) at 4.5 V whereas the luminous efficiencies and CIExy coordinates of other blue OLEDs using NPB, MADN and TPBi as host materials have 1.1, 2.6 and 2.0 cd/A and (0.15, 0.11), (0.15, 0.10) and (0.15, 0.10), respectively. Energy transfer mechanisms between BCzVBi and its host materials were discussed with an energy band structure of host materials.

Characterization of the High Luminance Top Emission Organic Light-emitting Devices (TEOLEDs) Using Dual Cathode Layer (이중 음극층을 이용한 고휘도 전면발광(Top emission) 유기EL소자의 특성평가)

  • Kang, Yoon-Ho;Lee, Su-Hwan;Shin, Dong-Won;Kim, Sung-Jun;Kim, Dal-Ho;Lee, Gon-Sub;Park, Jea-Gun
    • Journal of the Semiconductor & Display Technology
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    • v.5 no.3 s.16
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    • pp.23-27
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    • 2006
  • Recently, Top emission organic light-emitting diode (TEOLED) has been attracted by their potential application for the development of flat panel display (FPD). We have fabricated the high luminance top emission organic-emitting diode (TEOLED) using dual cathode layer and three top emitting structure. These devices were characterized by electroluminescence (EL) and current density-voltage (J-V) measurements. After compared it with Au anode structure, luminance of the device using dual anode was better than using without Al device. Consequently, Al layers are very good candidates for a promising electron-injecting buffer layer for top emission light-emitting diode (TEOLED).

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Properties of Hanji with natural pigment dyeing for use as a fashion material (천연 황색안료 염색한지의 패션소재 적용 가능성 평가에 관한 연구)

  • Kim, Kihoon;Lim, Hyuna
    • The Research Journal of the Costume Culture
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    • v.22 no.2
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    • pp.339-345
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    • 2014
  • This study analyzes and compares Hanji made with loess to Hanji made with kaolin, two yellow-based inorganic pigments, in terms of its physical properties, optical properties, and color fastness to light with the aim of using it as a fashion material. Hanji made by adding inorganic pigments showed an approximately 20% retention ratio on average. This figure was similar to those of loess and kaolin. Physical properties were analyzed, with the following results. A higher amount of additives lowered the apparent density and increased thickness and bulk. In general, inorganic pigment-added Hanji had lower tensile strength, bursting strength, and folding endurance compared to non-additive Hanji. The analysis of optical properties showed a lower brightness index for Hanji made with inorganic pigments compared to non-additive Hanji. When comparing the two inorganic pigments, the brightness of Hanji made with kaolin was higher. Regarding color fastness to light, loess showed level 4 and kaolin showed level 5 when 25% inorganic pigments on pulp were added to Hanji. Thus, Hanji made by adding inorganic pigments during the manufacturing process may perform well as materials for fashion because the additives enhanced both the color fastness to light and the bulk while maintaining the strength. In addition, Hanji dyed with inorganic pigments may have the potential to serve as materials for the fashion industry while still retaining the characteristics of Hanji.

ITO-Ag NW based Transparent Quantum Dot Light Emitting Diode (ITO-Ag NW기반 투명 양자점 발광 다이오드)

  • Kang, Taewook;Kim, Hyojun;Jeong, Yongseok;Kim, Jongsu
    • Korean Journal of Materials Research
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    • v.30 no.8
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    • pp.421-425
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    • 2020
  • A transparent quantum dot (QD)-based light-emitting diode (LED) with silver nanowire (Ag NW) and indium-tin oxide (ITO) hybrid electrode is demonstrated. The device consists of an Ag NW-ITO hybrid cathode (-), zinc oxide, poly (9-vinylcarbazole) (PVK), CdSe/CdZnS QD, tungsten trioxide, and ITO anode (+). The device shows pure green-color emission peaking at 548 nm, with a narrow spectral half width of 43 nm. Devices with hybrid cathodes show better performances, including higher luminance with higher current density, and lower threshold voltage of 5 V, compared with the reference device with a pure Ag NW cathode. It is worth noting that our transparent device with hybrid cathode exhibits a lifetime 9,300 seconds longer than that of a device with Ag NW cathode. This is the reason that the ITO overlayer can protect against oxidization of Ag NW, and the Ag NW underlayer can reduce the junction resistance and spread the current efficiently. The hybrid cathode for our transparent QD LED can applicable to other quantum structure-based optical devices.

Indium Tin Oxide Thin Films Grown on Polyethersulphone (PES) Substrates by Pulsed-Laser Deposition for Use in Organic Light-Emitting Diodes

  • Kim, Kyung-Hyun;Park, Nae-Man;Kim, Tae-Youb;Cho, Kwan-Sik;Sung, Gun-Yong;Lee, Jeong-Ik;Chu, Hye-Yong
    • ETRI Journal
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    • v.27 no.4
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    • pp.405-410
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    • 2005
  • High quality indium tin oxide (ITO) thin films were grown by pulse laser deposition (PLD) on flexible polyethersulphone (PES) substrates. The electrical, optical, and surface morphological properties of these films were examined as a function of substrate temperature and oxygen pressure. ITO thin films, deposited by PLD on a PES substrate at room temperature and an oxygen pressure of 15 mTorr, have a low electrical resistivity of $2.9{\times}10^{-4}{\Omega}cm$ and a high optical transmittance of 84 % in the visible range. They were used as the anode in organic light-emitting diodes (OLEDs). The maximum electro luminescence (EL) and current density at 100 $cd/m^2$ were 2500 $cd/m^{2}$ and 2 $mA/m^{2}$, respectively, and the external quantum efficiency of the OLEDs was found to be 2.0 %.

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Liquefaction Characteristics of HDPE by Pyrolysis (HDPE의 열분해에 의한 액화 특성)

  • 유홍정;이봉희;김대수
    • Polymer(Korea)
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    • v.27 no.1
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    • pp.84-89
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    • 2003
  • Pyrolysis of high density polyethylene(HDPE) was carried out to find the effects of temperature and time on the pyrolysis. The starting temperature and activation energy of HDPE pyrolysis increased with increasing heating rate. In general, conversion and liquid yield continuously increased with pyrolysis temperature and pyrolysis time. This tendency is very sensitive with pyrolysis time, especially at 45$0^{\circ}C$. Pyrolysis temperature has more influence on the conversion than pyrolysis time. Each liquid product formed during pyrolysis was classified into gasoline, kerosene, light oil and wax according to the distillation temperature based on the petroleum product quality standard of Korea Petroleum Quality Inspection Institute. As a result, the amount of liquid products produced during HDPE pyrolysis at 45$0^{\circ}C$ was in the order of light oil > wax > kerosene > gasoline, and at 475$^{\circ}C$ and 50$0^{\circ}C$, it was wax > light > oil > kerosene > gasoline.

Electron Injection Mechanisms Varied by Conjugated Polyelectrolyte Electron Transporting Layers in Polymer Light-Emitting Diodes (고분자 발광다이오드에서 공액고분자 전해질 전자수송층에 의해 변화되는 전자주입 메카니즘)

  • Um, Seung-Soo;Park, Ju-Hyun
    • Polymer(Korea)
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    • v.36 no.4
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    • pp.519-524
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    • 2012
  • Capacitance measurements of the polymer light-emitting diodes (PLEDs) with conjugated polyelectrolyte (CPE) electron transporting layers (ETLs) provide important information of device physics for understanding the function of CPEs as ETLs, together with current density-voltage-luminescence measurements. We investigated the counterion-dependent capacitance behaviors that present a highly negative or positive capacitance at the low frequency, and suggested different carrier injection mechanisms. Capacitance model study reveals that the electron injection mechanism can be described either by the dipole alignment scheme or by electronic charge carrier accumulation at the cathode/ETL/emission layer interfaces.