• Title/Summary/Keyword: leakage power

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A Study on Development of Power Supply for High Frequency Induction Heating (고주파 유도가열용 전원장치의 개발에 관한 연구)

  • Lee, Bong-Seob
    • Journal of the Korean Society of Industry Convergence
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    • v.5 no.3
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    • pp.179-186
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    • 2002
  • This paper proposed LC resonant current fed high frequency inverter for high frequency induction heating using leakage inductance of transformer and, its described operating principle. The analysis of circuit presented by using normalized parameter in considering leakage inductance of transformer and, discussed characteristic evaluation of inverter circuit in detail. The proposed inverter is operating ZVS to reduce turn-on and turn-off loss of switching devices so, raised an efficiency. And, the experimental apparatus was made on base characteristic evaluation of theoretical analysis to discuss possibility on high frequency source and confirmed a rightfulness theoretical analysis. A result of study, the proposed inverter is higher utilizing factor using on leakage inductance of transformer and show possibility, which is application on high frequency power system.

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28 nm MOSFET Design for Low Standby Power Applications (저전력 응용을 위한 28 nm 금속 게이트/high-k MOSFET 디자인)

  • Lim, To-Woo;Jang, Jun-Yong;Kim, Young-Min
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.2
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    • pp.235-238
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    • 2008
  • This paper explores 28 nm MOSFET design for LSTP(Low Standby Power) applications using TCAD(Technology Computer Aided Design) simulation. Simulated results show that the leakage current of the MOSFET is increasingly dominated by GIDL(Gate Induced Drain Leakage) instead of a subthreshold leakage as the Source/Drain extension doping increases. The GIDL current can be reduced by grading lateral abruptness of the drain at the expense of a higher Source/Drain series resistance. For 28 nm MOSFET suggested in ITRS, we have shown Source/Drain design becomes even more critical to meet both leakage current and performance requirement.

A Study on the Analysis of Field Condition for Ground Fault Protection Installation among Electrical Installations in the Entertainment Area (공연장의 전기설비중 지락보호설비에 대한 현장실태분석 연구)

  • Bae, S.M.;Kim, H.S.;Gil, H.J.;Lee, G.H.
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1721-1723
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    • 2002
  • This paper deals with the analysis of field condition for earth leakage current alarming system in the stage lighting, stage sound stage machinery installation. These analyses of field condition were carried out in accordance with investigating an installation of earth leakage current alarming system with respect to a main line of power source, dimmer, sound equipment, machinery mobile unit equipment and so on. As a result of analyses. The earth leakage current alarming system has been installed only a part of the main line of power source and the probability of places which were installed was less than 50(%). Therefore, it is desirable that the earth leakage current alarming system is installed at places which are suitable, for example, dimmer, each kind machinery etc. in order to prevent electrical hazard.

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Analysis and Degradation of leakage Current in submicron Device (미세소자에서 누설전류의 분석과 열화)

  • 배지철;이용재
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.113-116
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    • 1996
  • The drain current of the MOSFET in the off state(i.e., Id when Vgs=0V) is undesired but nevertheless important leakage current device parameter in many digital CMOS IC applications (including DRAMs, SRAMs, dynamic logic circuits, and portable systems). The standby power consumed by devices in the off state have added to the total power consumed by the IC, increasing heat dissipation problems in the chip. In this paper, hot-carrier-induced degra- dation and gate-induced-drain-leakage curr- ent under worse case in P-MOSFET\`s have been studied. First of all, the degradation of gate-induced- drain-leakage current due to electron/hole trapping and surface electric field in off state MOSFET\`s which has appeared as an additional constraint in scaling down p-MOSFET\`s. The GIDL current in p-MOSFET\`s was decreased by hot-electron stressing, because the trapped charge were decreased surface-electric-field. But the GIDL current in n-MOS77T\`s under worse case was increased.

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Experimental Study for Gate Trap and Generation Current using DCIV Method

  • Kim, Young Kwon;Lee, Dong Bin;Choi, Won Hyeok;Park, Taesik;Lee, Myoung Jin
    • KEPCO Journal on Electric Power and Energy
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    • v.2 no.2
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    • pp.223-225
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    • 2016
  • The newly proposed analysis method using a direct-current current-voltage (DCIV) simulation is introduced for investigating leakage current composing MOS transistor. From comparing the density and location of traps using DCIV method and investigating the leakage current of gate channel transistor, we proposed the graphical analysis method to correlate the DCIV current and leakage mechanism by the traps. And, our graphical method intuitively explains that leakage current in MOS transistor is well correlated with the DCIV current of the MOS transistor arrays due to two kinds of traps created by Fowler-Nordheim (F-N) stress and Hot carrier stress, respectively.

Overmodulation Characteristics of Carrier Based MVPWM for Eliminating the Leakage Currents in Three-Level Inverter (3-레벨 인버터의 누설전류 제거를 위한 캐리어 기반 MVPWM의 과변조 특성)

  • Lee, Eun-Chul;Choi, Nam-Sup;Ahn, Kang-Soon
    • The Transactions of the Korean Institute of Power Electronics
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    • v.20 no.6
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    • pp.509-516
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    • 2015
  • The overmodulation characteristics of a carrier-based medium vector pulse width modulation (CBMVPWM) are examined in this study. CBMVPWM can completely eliminate leakage currents in a three-phase, three-level inverter using only the switching states with the same common mode voltage even in an overmodulation operation. The analytic equations for the magnitude of the output voltage and the switching frequency are derived for overmodulation operation, and the effect of dead time on the leakage current is demonstrated. This study presents the operating principle of CBMVPWM, basic overmodulation features, and simulations and experiments for operating verification.

Adopting the Banked Register File Scheme for Better Performance and Less Leakage

  • Jang, Hyung-Beom;Chung, Eui-Young;Chung, Sung-Woo
    • ETRI Journal
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    • v.30 no.4
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    • pp.624-626
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    • 2008
  • Excessively high temperature deteriorates the reliability and increases the leakage power consumption of microprocessors. The register file, known as one of the hottest functional units in microprocessors, incurs frequent dynamic thermal management operations for thermal control. In this letter, we adopt the banked register file scheme, which was originally proposed to reduce dynamic power consumption. By simply modifying the register file structure, the temperature in the register file was reduced dramatically, resulting in 13.37% performance improvement and 10.49% total processor leakage reduction.

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A Family of Non-Isolated Photovoltaic Grid Connected Inverters without Leakage Current Issues

  • Ji, Baojian;Wang, Jianhua;Hong, Feng;Huang, Shengming
    • Journal of Power Electronics
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    • v.15 no.4
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    • pp.920-928
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    • 2015
  • Transformerless solar inverters have a higher efficiency than those with an isolation link. However, they suffer from a leakage current issue. This paper proposes a family of single phase six-switch transformerless inverter topologies with an ac bypass circuit to solve the leakage current problem. These circuits embed two unidirectional freewheeling current units into the midpoint of a full bridge inverter, to obtain a freewheeling current path, which separates the solar panel from the grid in the freewheeling state. The freewheeling current path contains significantly fewer devices and poor performance body diodes are not involved, leading to a higher efficiency. Meanwhile, it is not necessary to add a voltage balancing control method when compared with the half bridge inverter. Simulation and experiments are provided to validate the proposed topologies.

Study of Boiler Tube Micro Crack Detection Ability by Metal Magnetic Memory (금속 자기기억법 활용 보일러 튜브의 미소 결함 검출력 연구)

  • Jungseok, Seo;Joohong, Myong;Jiye, Bang;Gyejo, Jung
    • KEPCO Journal on Electric Power and Energy
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    • v.8 no.2
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    • pp.93-96
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    • 2022
  • The boiler tubes of thermal power plants are exposed to harsh environment of high temperature and high pressure, and the deterioration state of materials rapidly increases. In particular, parent material and welds of the materials used are subjected to a temperature change and various constraints, resulting in deformation and its growth, resulting in frequent leakage accidents caused by tube failure. The power plant checks the integrity of boiler tubes through non-destructive testing as it may act as huge costs loss and limitation of power supply during power station shutdown period due to boiler tube leakage. However, the current non-destructive testing is extremely limited in the field to detect micro cracks. In this study, the ability of metal magnetic memory technique to detect flaws of size that are difficult to inspect by the visual or general non-destructive methods was verified in the early stage of their occurrence.

Analysis of Transformer Fluid Aging from Overload Operation (지중 저압접속함의 침수조건에 따른 전위 분석)

  • Joung, Jong-Man;Lee, Byung-Sung;Choi, Jong-Gi;Jeong, Yeon-Ha;Park, Cheol-Bae;Song, Il-Kun
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2006.05a
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    • pp.284-287
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    • 2006
  • In this paper variety test results were discussed regarding to the ground potential increase. The tests conducted with a joint box simulating leakage point having an insulator fault. Inside the joint box three-phase cables and one neutral line were connected and the insulator at jointed part was peeled from the one of three-phase cables. The potentials around manhole cover were measured with the variation of manhole material, ground resistance and water resistance when the manhole was flooded. The potentials induced by an electric leakage were drastically decreased with increasing the distance from the leakage location and with less ground resistance.

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