• Geophysics and Geophysical Exploration
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• v.12 no.3
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• pp.239-245
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• 2009

To verify the reinforcing effect of grouting materials composed of colloid cement and ordinary portland cement on the water leakage region in a small scale dike, we performed a tubecasing method and applied surface electrical resistivity survey including electrical resistivity tomography (ERT) to find resistivity variation before and after grouting. Hydraulic conductivities after grouting show 10 times lower than those of before grouting. These variation indicates that the cement grout blocks the leakage pathway effectively. As the results of dipole-dipole resistivity survey along the dike, resistivity distribution after grouting did not represent noticeable spatial variation in time. Resistivity monitoring results at the dike with vertical electrical sounding (VES) showed that the region of decreasing apparent resistivity was occupied by the grout after grouting. Predicted resistivities from the inversion of ERT data well matched with results of VES at the same regions. From the ERT using check holes to inspect the effect of grouting, we could find that the ERT is quite effective to identify spatially the grout region in a dike.

• Transactions of The Korea Fluid Power Systems Society
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• v.7 no.1
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• pp.1-5
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• 2010

This paper presents the experimental results of the radial piston type oil pump with new mechanism for a metal diaphragm hydrogen compressor. Generally, metal diaphragm type hydrogen compressor systems are operated by oil hydraulic power. In this system an oil compensating pump has been demanded to compensate for a leakage oil head chamber. The metal diaphragm type hydrogen compressor consists of an oil compensating pump, commonly used hydraulic piston pump and driven by main crank shaft. The radial piston type oil compensating pump with new rolling contacted piston mechanism is developed and experimented. The developed piston element of the radial piston pump consists of piston, steel ball, return spring, two check valves, eccentric cam and ball racer. In this study, designed 4 type pistons as and orifice hole. Operating characteristics and pressure ripple characteristics are tested under no load to 60bar loaded with every 20bar increasing step and pressure ripple and flow rate are experimentally investigated.

• Journal of Mechanical Science and Technology
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• v.17 no.1
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• pp.146-156
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• 2003

A numerical algorithm is developed to analyze the performance of a Unit-injector (UI) System for a diesel engine. The fundamental theory of the algorithm is based on the continuity equation of fluid dynamics. The loss factors that should be seriously regarded on the continuity equation are the compressibility effect of liquid fuel, the wall friction loss in high-pressure fuel lines of the system, the kinetic energy loss of fuel in the system, and the leakage of fuel out of the control volume. For an evaluation of the developed simulation algorithm, the calculation results are compared with the experimental outputs provided by the Technical Research Center of Doowon Precision Industry Co. (DPICO) ； the maximum pressure in the plunger chamber (P$\_$p/) and total amount of fuel injected into a cylinder per cycle (Q$\_$f/) at each operational condition. The result shows that the average error rate (%) of P$\_$p/ and Q$\_$f/ are 2.90% and 4.87%, respectively, in the specified operational conditions. Hence, it can be concluded that the analytical simulation algorithm developed in this study can be reasonably applied to the performance prediction of newly designed UI system.

• Tribology and Lubricants
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• v.29 no.3
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• pp.180-185
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• 2013

The purpose of this study was to analyze the tribological characteristics of the Electronic control suspension System in a car. In the first example, the cilp used to attach the front electronic control suspension(ECS) system's control actuator was fastened very tightly. Thus, the wire was cut because of continual rotation of the shock-up shover piston rod used to adjust the height of the car. This verified the disconnection phenomenon where wire damaged makes it impossible for the ECS system to send signal to the actuator. The second example, involved a minute hole that allowed gas to leak from the ECS system. As a result, the height of the car verified the down phenomenon. In the third example, the resistance of a wire measured at $0.21{\Omega}$, when the G sensor was disconnected from the system. This verified the system shutdown and lighting of the ECS warning lamp because of body interference caused by a slight pressure on the battery cover. Therefore, quality control is always necessary to ensure safety and durability of a car.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.55.1-55.1
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• 2011

Dye-sensitized solar cell(DSSC) have been considered one of the promising alternatives to conventional solar cells, because of their low cost, easy fabrication and relatively high energy conversion efficiency. However, although the cell offers reasonable efficiency at least 11%, the use of a liquid electrolyte placed technological challenges for achieving the desired durability and operational stability of the cell. In order to prevent or reduce electrolyte leakage considerable efforts have been made, such as p-type semiconductor or organic hole-transport material that better mechanical properties and simple fabrication processes. In this work, we synthesized solid-state electrolyte containing LiI and KI metal salt with starting materials of poly ethylene oxide to substitute liquid electrolyte enhance the ionic conductivity and solar conversion efficiency. Li+ leads to faster diffusion and higher efficiency and K+ leading to higher ionic conductivity. The efficiency of poly ethylene oxide/LiI system electrolyte is 1.47% and poly ethylene oxide/potassium electrolyte is 1.21%. An efficiency of 3.24% is achieved using solid-state electrolyte containing LiI and KI concentrations. The increased solar conversion efficiency is attributed to decreased crystallinity in the polymer that leads to enhanced charge transfer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.825-831
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• 2006

As an increase of chip complexity and level of chip integration, chip input/output (I/O) pad pitches are also drastically reduced. With arrival of high complexity SoC (System on Chip) and SiP (System in Package) products, conventional horizontal type probe card showed its limitation on probing density for wafer level test. To enhance probing density, we proposed new vertical type probe card that has the $70{\mu}m$ probe needle with tungsten wire in $80{\mu}m$ micro-drilled hole in ceramic board. To minimize alignment error, micro-drilling conditions are optimized and epoxy-hardening conditions are also optimized to minimize planarity changes. To apply wafer level test for target devices (T5365 256M SDRAM), designed probe card was characterized by probe needle tension for test, contact resistance measurement, leakage current measurement and the planarity test. Compare to conventional probe card with minimum pitch of $50{\sim}125{\mu}m\;and\;2\;{\Omega}$ of average contact resistance, designed probe card showed only $22{\mu}$ of minimum pitch and $1.5{\Omega}$ of average contact resistance. And also, with the nature of vertical probing style, it showed comparably small contact scratch and it can be applied to bumping type chip test.

• Proceedings of the Korean Society of Computer Information Conference
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• 2018.07a
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• pp.29-30
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• 2018

전 세계적으로 급증하고 있는 에너지 수요로 인해 오일, 가스 등의 에너지 생산 매체를 운송 할 수 있는 수송 수단인 배관에 대한 수요도 증가하고 있는 추세이다. 그러나 이러한 배관을 장시간 사용할 경우 노후화로 인해 발생되는 파공은 배관에 흐르는 유체 누설의 원인이 되고, 나아가서 경제 및 재난 피해를 야기할 수 있다. 따라서 다양한 배관 누설 검출 기술들이 개발되고 있는 추세이며, 이를 위해서는 신뢰성 있는 결함 모사 데이터의 확보가 매우 중요하다. 본 논문에서는 신뢰성 있는 데이터 수집을 위해 배관의 누설 상황을 모사 할 수 있는 테스트베드를 제어하고, 테스트베드에서 데이터를 안정적으로 취득할 수 있는 테스트베드 제어 및 데이터 취득 시스템을 제안한다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.94-99
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• 2004

silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

• Proceedings of the KIEE Conference
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• 2005.07e
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• pp.55-57
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• 2005

Along with the development of the industrial society, as the transportation of water which is the indirect capital of society and petroleum, gas, etc used as energy sources is rapidly increased. the underground material is being expanded. Like this, the pipes laid under the ground not only bring the corrosion to the land circumstances to reduce the life of the pipes, but also raise the social problem of leakage accidents and the economic loss by Pin Hole. By reason of this, for the purpose of protecting the corrosion of the underground material, we are constructing and operating the electrolytic protection facilities. In case of a region of which specific resistance is high, however, we are not keeping proper protection potential(that is -850mV) to get protection effects. In this study, for the water pipes that under-voltage phenomena occur in the protection potential, we made a spot survey on the under-voltage section and normal-voltage section, compared, analyzed each of the contents and examined the under-voltage causes of the protection potential.

• ETRI Journal
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• v.27 no.4
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• pp.439-445
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• 2005

We introduce a strained-SiGe technology adopting different thicknesses of Si cap layers towards low power and high performance CMOS applications. By simply adopting 3 and 7 nm thick Si-cap layers in n-channel and p-channel MOSFETs, respectively, the transconductances and driving currents of both devices were enhanced by 7 to 37% and 6 to 72%. These improvements seemed responsible for the formation of a lightly doped retrograde high-electron-mobility Si surface channel in nMOSFETs and a compressively strained high-hole-mobility $Si_{0.8}Ge_{0.2}$ buried channel in pMOSFETs. In addition, the nMOSFET exhibited greatly reduced subthreshold swing values (that is, reduced standby power consumption), and the pMOSFET revealed greatly suppressed 1/f noise and gate-leakage levels. Unlike the conventional strained-Si CMOS employing a relatively thick (typically > 2 ${\mu}m$) $Si_xGe_{1-x}$ relaxed buffer layer, the strained-SiGe CMOS with a very thin (20 nm) $Si_{0.8}Ge_{0.2}$ layer in this study showed a negligible self-heating problem. Consequently, the proposed strained-SiGe CMOS design structure should be a good candidate for low power and high performance digital/analog applications.