• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• 마이크로전자및패키징학회지
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• 제10권3호
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• pp.19-27
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• 2003

플립칩 전자패키지에서 칩과 기판(PCB)를 연결할 때, 통상적으로 칩쪽은 금속패드/UBM 처리를 기판 쪽은 표면처리를 한 후 솔더로 연결하는데, 이 때 사용되는 UBM이나 표면처리에 따라, 칩/솔더, PCB/솔더에 생성되는 금속간 화합물의 종류와 두께 및 솔더의 조성이 변하게 되어 궁극적으로 솔더 접합부의 기계적 신뢰성에 영향을 주게 된다. 본 연구에서는 Cu와 Au/Ni의 두가지 금속 패드가 무연솔더의 저주기 피로특성에 어떠한 영향을 미치는 지에 대해 고찰해 보았다. 저주기 피로 실험은 Cu나 Au/Ni이 표면처리 된 기판에 무연솔더 (Sn-3.5Ag, Sn-3.5Ag-1.5Cu, Sn-3.5Ag-XBi(X=2.5, 7.5), Sn-0.7Cu)를 리플로하여 총변위를 변화시키면서 상온에서 시행하였다. 기판의 표면처리에 관계없이 Sn-3.5Ag, Sn-3.5Ag-XCu(X-0.75, 1.5), Sn-0.7Cu 합금이 Sn-3.5Ag-7.5Bi 합금보다 피로저항성이 현격히 좋았으며, Au/Ni 표면처리한 솔더 접합부가 Cu 처리한 경우보다 피로저항성이 뛰어난 것으로 나타났다. 파괴 후 단면을 조사한 결과 계면에 형성된 금속간 화합물 내에 미세균열이 발견되었는데, Cu 표면처리를 사용한 경우 더 많은 미세균열이 생성된 것을 볼 수 있었다. Sn-3.5Ag, Sn-3.5Ag-Cu(X=0.75, 1.5), Sn-0.7Cu 합금의 경우 금속간 화합물 내에 생기는 미세 균열이 거시 균열로 성장하지 않고 파단은 항상 솔더 내부로 일어난 반면. Bi를 함유한 솔더의 경우, 기판의 표면처리에 상관없이 금속간 화합물/솔더 계면으로 균열이 생성 진전되어 다른 솔더합금에 비해 열악한 피로저항성을 나타내는 것으로 보인다. 이것은 Bi의 금속간화 합물/솔더 입계 편석이나 Bi 합금이 다른 합금에 비해 높은 경도값을 가지는 것에 인한 것으로 보여 진다.