• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.1
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• pp.47-52
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• 2008

As the packing density of IC devices gets ever higher, the thickness of the gate $SiO_2$ layer of the MOS devices is now required to be reduced down to 1 nm. For such a thin $SiO_2$ layer, the MOS device cannot operate properly because of tunneling current and threshold voltage shift. Hence there has been much effort to develop new dielectric materials which have higher dielectric constants than $SiO_2$ and is free from such undesirable effects. In this work, the physical and electrical characteristics of ALD $ZrO_2$ film have been studied. After deposition of a thin ALD $ZrO_2$ film, it went through thermal treatment in the presence of argon gas at $800^{\circ}C$ for 1 hr. The characteristics of morphology, crystallization kinetics, and interfacial layer of $Pt/ZrO_2/Si$ samples have been investigated by using the analyzing instruments like XRD, TEM and C-V plots. It has been found that the characteristics of the $Pt/ZrO_2/Si$ device was enhanced by the thermal treatment.

• Journal of Powder Materials
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• v.26 no.6
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• pp.455-462
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• 2019

ZrB₂ ceramic and ZrB₂ ceramic composites with the addition of SiC, WC, and SiC/WC are successfully synthesized by a spark plasma sintering method. During high-temperature oxidation, SiC additive form a SiO₂ amorphous outer scale layer and SiC-deplete ZrO₂ scale layer, which decrease the oxidation rate. WC addition forms WO₃ during the oxidation process to result in a ZrO₂/WO₃ liquid sintering layer, which is known to improve the anti-oxidation effect. The addition of SiC and WC to ZrB₂ reduces the oxygen effective diffusivity by one-fifth of that of ZrB₂. The addition of both SiC and WC shows the formation of a SiO₂ outer dense glass layer and ZrO₂/WO₃ layer so that the anti-oxidation effect is improved three times as much as that of ZrB₂. Therefore, SiC- and WC-added ZrB₂ has a lower two-order oxygen effective diffusivity than ZrB₂; it improves the anti-oxidation performance 3 times as much as that of ZrB₂.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2008.05a
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• pp.285-288
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• 2008

The Present Study describes the numerical investigations concerning a fuel(Hydrogen), inert gas (Nitrogen) or supersonic air stream issued between each other. The basic flow configuration consists of a plane, double shear/mixing layer flow. For the numerical solution, a fully conservative unsteady $2^{nd}$ order time accurate sub-iteration method and a $2^{nd}$ order Total Variation Diminishing(TVD) scheme are used with the finite volume method(FVM). The results are consist of three categories ; single shear layer consist of fuel and supersonic air stream, inert gas stream issued between supersonic air and fuel stream, fuel gas stream issued between supersonic air and fuel stream. The numerical calculations has been carried out in case of 1,2, and 4mm thickness of center stream. The width of total gas stream is 4cm.

• Transactions on Electrical and Electronic Materials
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• v.8 no.5
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• pp.218-221
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• 2007

High-efficiency white organic light-emitting diodes(WOLEDs) were fabricated with two emissive layers and an blocking layer was sandwiched between two phosphorescent dopants, bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III(FIrpic) as the blue emission and a newly synthesized red phosphorescent material guest, bis(5-acetyl-2-phenylpyridinato-N,C2') acetylacetonate($(acppy)_2Ir(acac)$). This blocking layer prevented a T-T annihilation in a red emissive layer, and balanced with blue and red emission as blocking of hole carriers. The white device showed Commission Internationale d'Eclairage($CIE_{x,y}$) coordinates of (0.317, 0.425) at 22400 $cd/m^2$, a maximum luminance of 27300 $cd/m^2$ at 268 $mA/cm^2$, a maximum luminous efficiency and power efficiency of 26.9 cd/A and 18.6 lm/W.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.821-825
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• 2013

Effect of multi-stacked layer (MSL), 0.1 mol (M) and 0.3 mol (M) hafnium oxide ($HfO_2$) alignment layers were fabricated via a solution-process for LCs orientation. The solutions were spin-coated and annealed in a furnace. MSL consists of three sub-layers using 0.1 M solution, mono-layer (ML) is composed of 0.3 M $HfO_2$ solution. Then ion-beam irradiation was treated with 1.8 keV for 2 min. $HfO_2$-based LC cells were investigated through photographs, pre-tilt angle using crystal rotation method, X-ray photoelectron spectroscopy (XPS) measurement, and surface roughness using atomic force microscopy(AFM) for their characteristic research. Good LC orientation characteristics were observed on MSL $HfO_2$ surface. The LC alignment mechanism on MSL $HfO_2$ and ML $HfO_2$ surfaces was attributed to van der Waals (VDW) interaction between the LC molecular and substrate surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.11
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• pp.934-940
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• 2001

Magnetic properties were investigated for Si/SiO$_2$/NiFe(300 )/A1$_2$O$_3$(t)/Co(200 ) junction related with the parameters of $Al_2$O$_3$. Insulating $Al_2$O$_3$ layer was formed by depositing a 5~40 thick Al layer, followed by a 90~120s RF plasma oxidation in an $O_2$ atmosphere. Magnetoresistance was not observed for tunnel junction with 5~10 thick Al layer, but magnetoresistance was observed large for tunnel junction with 15~40 thick Al layer. Oxidation time did not largely influence magnetoresistance. Tunnel magnetoresistance effect depended on magnetization behavior of two ferromagnetic layers. Tunneling junction was confirmed through nonlinear I-V curve. In this work, tunneling magnetoresistance(TMR) up to 30 % was observed. This apparent TMR is an artifact of the nonuniform current flow over the junction in the cross geometry of the electrodes.

• Journal of Sensor Science and Technology
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• v.30 no.6
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• pp.364-368
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• 2021

We developed a highly efficient organic photovoltaic (OPV) cell with a poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b;4,5-b']dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]thiophene-)-2-carboxylate-2-6-diyl)]:[6,6]-phenyl-C71-butyric acid methyl ester active layer for harvesting lower-intensity indoor light energy to power various self-powered sensor systems that require power in the microwatt range. In order to achieve higher power conversion efficiency (PCE), we first optimized the thickness of the active layer of the OPV cell through optical simulations. Next, we fabricated an OPV cell with optimized active layer thickness. The device exhibited a PCE of 12.23%, open circuit voltage of 0.66 V, short-circuit current density of 97.7 ㎂/cm², and fill factor of 60.53%. Furthermore, the device showed a maximum power density of 45 ㎼/cm², which is suitable for powering a low-power (microwatt range) sensor system.

• Journal of Electrochemical Science and Technology
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• v.14 no.3
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• pp.231-242
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• 2023

Li₂O-based cathodes utilizing oxide-peroxide conversion are innovative next-generation cathodes that have the potential to surpass the capacity of current commercial cathodes. However, these cathodes are exposed to severe cathode-electrolyte side reactions owing to the formation of highly reactive superoxides (O^x-, 1 ≤ x < 2) from O^2- ions in the Li₂O structure during charging. Succinonitrile (SN) has been used as a stabilizer at the cathode/electrolyte interface to mitigate cathode-electrolyte side reactions. SN forms a protective layer through decomposition during cycling, potentially reducing unwanted side reactions at the interface. In this study, a composite of Li₂O and Ni-embedded reduced graphene oxide (LNGO) was used as the Li₂O-based cathode. The addition of SN effectively thinned the interfacial layer formed during cycling. The presence of a N-derived layer resulting from the decomposition of SN was observed after cycling, potentially suppressing the formation of undesirable reaction products and the growth of the interfacial layer. The cell with the SN additive exhibited an enhanced electrochemical performance, including increased usable capacity and improved cyclic performance. The results confirm that incorporating the SN additive effectively stabilizes the cathode-electrolyte interface in Li₂O-based cathodes.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.46-51
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• 2023

We investigated the MoS₂ thin film layer by thermolytic deposition and applied it to the silicon solar cells. MoS₂ thin films were made by two methods of dipping and spin coating of (NH₄)₂MoS₄ precursor solution. We implemented two types of substrates of microtextured and nano-microtextured 6-in. Si pn junction wafers. The fabricated MoS₂ thin film layer was analyzed, and solar cells were fabricated by applying the standard silicon solar cell process. The MoS₂ thin film layer of sulfur-deficient form was deposited on the n-type emitter layer, and electrons, which are minority carriers, were well transported at the interface and exhibited photovoltaic solar cell characteristics. The cell efficiencies were achieved at 5% for microtextured wafers and 2.56% for nano-microtextured wafers.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.190-194
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• 2012

The formation of high-quality polycrystalline silicon (poly-Si) on relatively low cost substrate has been an important issue in the development of thin film solar cells. Poly-Si seed layers were fabricated by an inverse aluminum-induced crystallization (I-AIC) process and the properties of the resulting layer were characterized. The I-AIC process has an advantage of being able to continue the epitaxial growth without an Al layer removing process. An amorphous Si precursor layer was deposited on Corning glass substrates by RF magnetron sputtering system with Ar plasma. Then, Al thin film was deposited by thermal evaporation. An $SiO_2$ diffusion barrier layer was formed between Si and Al layers to control the surface orientation of seed layer. The crystallinity of the poly-Si seed layer was analyzed by Raman spectroscopy and x-ray diffraction (XRD). The grain size and orientation of the poly-Si seed layer were determined by electron back scattering diffraction (EBSD) method. The prepared poly-Si seed layer showed high volume fraction of crystalline Si and <100> orientation. The diffusion barrier layer and processing temperature significantly affected the grain size and orientation of the poly Si seed layer. The shorter oxidation time and lower processing temperature led to a better orientation of the poly-Si seed layer. This study presents the formation mechanism of a poly seed layer by inverse aluminum-induced crystallization.