• Journal of Integrative Natural Science
• /
• v.3 no.2
• /
• pp.78-83
• /
• 2010

DBR/Host dual porous silicons containing DBR and host structure were prepared and their optical properties were characterized using Ocean Optics spectrometer. In this dual porous silicon, single porous silicon layer was used as host layer for possible biomolecule and drug materials and DBR porous silicon layer was used for signal transduction due to the recognition of molecules. Optical reflection spectrum of dual porous silicon displayed only DBR reflection but Fabry-Perot fringe pattern. DBR reflection band of dual porous silicon shifted to the shorter wavelength as the etching time of host layer increased. Cross-sectional FE-SEM image of dual porous silicon displayed a thickness of about 20 micrometer for DBR porous silicon layer. Developed etching technology could be useful to prepare DBR porous silicon which exhibited specific reflection resonance at the required wavelength and to provide an label-free biosensors and drug delivery materials.

• Korean Journal of Materials Research
• /
• v.17 no.2
• /
• pp.115-120
• /
• 2007

Polycrystalline silicon (poly-Si) thin film transistors (TFTs) might be fabricated on the mica substrate and transferred to a flexible plastic substrate because mica can be easily cleaved into a thin layer. To overcome the adhesion and stress problem between poly-Si film and mica substrate, a buffer layer consisting of $SiO_x/Ta/Ti$ three layers has been developed. The $SiO_x$ layer is for electrical isolation, the Ti layer is for adhesion of $SiO_{x}$ and mica. and Ta is for stress relief between $SiO_x$ and Ti. A TFT was fabricated on the mica substrate by a conventional Si process and was successfully transferred to a plastic substrate.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.29 no.10A
• /
• pp.1215-1222
• /
• 2004

In this paper, we proposed the directional coupler using two layer microstrip substrate which is improved coupling and isolation. Modified two-layer directional coupler is the structure which is added to the one-layer on the signal line and located the floating conductor on the added layer. Also, we applied the aperture on the ground plane in order to enhancing the coupling value, and located the conductor in order to enhancing the isolation and VSWR according to S$_{11}$. As a result, proposed two-layer directional coupler has about 2 dB more higher coupling and 20 dB more higher isolation than conventional couplerer

• Journal of Welding and Joining
• /
• v.23 no.6
• /
• pp.72-76
• /
• 2005

Friction surfacing of STS304 consumable rod on S45C substrate was investigated by microstructural observation and mechanical tests. STS304 layer formed a strongly-bonded thick layer under a wide range of surfacing conditions. The highest coating eefficiency was obtained in the condition of 1000rpm-2.5mm/sec-2.5mm/sec. The hardness distribution showed the peak value in the boundary layer and as the consumable rotation speed increased, the boundary layer also hardness increasing. As the consumable rotation speed and the traveling speed increased, the coating efficiency tended to decrease. On the other hand, as the feeding speed increased, the coating efficiency appeared to be increased. The new Fe-Cr-Ni alloy layer is showed in the interface layer on $5\~15{\mu}m$ width. After friction surfacing, corrosion resistance of STS 304 surfacing layers were equaled to that of STS304 consumable rod.

• Korean Journal of Materials Research
• /
• v.12 no.7
• /
• pp.568-572
• /
• 2002

Plasma sulfnitriding technology was employed to harden the surface of SKD61 steel. The plasma sulfnitriding was performed with 3 torr gas pressure at $580^{\circ}C$ for 20 hours. Plasma sulfnitriding resulted in the formation of very thin $2-3\mu\textrm{m}$ FeS sulfide layer on top of $15-20\mu\textrm{m}$ compound layer, which consisted of predominantly $\varepsilon$- $Fe{2-3}$ N and a second phase of $\Upsilon'-Fe_4$N. In comparision with plasma nitriding treatment, plasma sulfnitriding treatment showed better surface roughness and corrosion resistance due to the presence of the thin FeS layer. which coated microvoids and microcracks on top of the nitrided layer. It was also found that plasma sulfnitrided sample showed better wear resistance due to the presence of the thin FeS layer which acted as a solid lubricant.

• Structural Engineering and Mechanics
• /
• v.78 no.2
• /
• pp.135-143
• /
• 2021

In this study, continuous contact problem in the functionally graded (FG) layer loaded with a FG flat punch resting on the elastic semi-infinite plane was analyzed by the finite element method (FEM). It was assumed that the shear modulus and density of the layer and punch varied according to exponentially throughout their depth. FG layer's weight was included to the problem and additionally all surfaces were considered as frictionless. Analysis of FG materials was performed with a special macro which was added to the ANSYS program. Firstly, the shear modulus of the punch was considered to be very rigid and the results of initial separation load (λcr) and distance (xcr) were compared with the analytical solution. Afterwards, results obtained from the contact analysis made according to the inhomogeneity parameters (β, γ) between FG punch-FG layer which had been unprecedented in the literature were discussed. As a result, FG punch's stress values at the punch edges where stress accumulations occurred were found to be smaller than the rigid punch. The security of the structure, longer life of the material and ease of production are directly related to the reduction of the stress values. The results obtained in this study are important in this respect. Also this work is the first study that investigates the effect of FG punch on the FG layer.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.24 no.2
• /
• pp.78-83
• /
• 2019

In this study, we analyze the structure of the transceiver coil in the inductive power transfer (IPT) system. In the IPT system, the transceiver coil design needs to have the highest magnetic coupling possible because of the relatively low magnetic coupling due to the large gap of distance without the core. The transmitting coil may be formed as a multi-layer type according to the distance between the transmitting and receiving coils if the receiving coil is configured as a multi-layer type on the inner structure of the receiving apparatus, thereby improving the magnetic coupling and system efficiency. We compare and analyze the coil magnetic coupling, and system efficiency according to the layer structure of the transmitting and receiving coils and verify the analysis by JMAG simulation. Experimental results show that the layer structure of the transceiver should be considered according to the inner space of the receiving device and the spacing distance.

• Journal of Ceramic Processing Research
• /
• v.13 no.spc1
• /
• pp.140-144
• /
• 2012

Ga-doped ZnO (GZO) was a limit of application on the photovoltaic devices such as CIGS, CdTe and DSSC requiring high process temperature, because it's electrical resistivity is unstable above 300 ℃ at atmosphere. Therefore, ZTO (zinc tin oxide) was introduced in order to improve permeability and thermal stability of GZO film. The resistivity of GZO (300 nm) single layer increased remarkably from 1.8 × 10-3Ωcm to 5.5 × 10-1Ωcm, when GZO was post-annealed at 400 ℃ in air atmosphere. In the case of the ZTO (150 nm)/GZO (150 nm) double layer, resistivity showed relatively small change from 3.1 × 10-3Ωcm (RT) to 1.2 × 10-2Ωcm (400 ℃), which showed good agreement with change of carrier density. This result means that ZTO upper layer act as a barrier for oxygen at high temperature. Also ZTO (150 nm)/GZO (150 nm) double layer showed lower WVTR compared to GZO (300 nm) single layer. Because ZTO has lower WVTR compared to GZO, ZTO thin film acts as a barrier by preventing oxygen and water molecules to penetrate on top of GZO thin film.

• KIEE International Transactions on Electrophysics and Applications
• /
• v.3C no.2
• /
• pp.55-58
• /
• 2003

This paper examines the electrical characteristic of single oxide layer due to various diffusion conditions, substrate orientations, substrate resistivity and gas atmosphere in a diffusion furnace. The oxide quality was examined through the capacitance-voltage characteristic due to the annealing time after oxidation process, and the capacitance-voltage characteristics of the single oxide layer by will be described via semiconductor device simulation.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2012.05a
• /
• pp.169-169
• /
• 2012

Molybdeum oxide-doped 4,4',4"-tris(2-naphthyl(phenyl)amino)tri- phenylamine (2-TNATA) layer 의 도핑농도가 75%일 때 OLED 소자의 성능이 향상되었다. Hole transport layer (HTL) 로 사용된 MOOX-doped 2-TNATA layer는 hole-injection barrier height를 낮추어서 효율적인 홀주입특성을 보였다. 그러나 도핑농도가 75%이하일 때는 소자 특성이 나빠짐을 알 수 있었다.