• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.110-110
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• 2010

본 실험에서는 Silicon (001) 기판을 사용하여 silicon 기판상에 modified Stranski-Krastanow(S-K) 방식으로 InAs quantum dot (QD) 을 성장하고 그 위에 InSb layer를 형성하였다. 기판온도 $390^{\circ}$에서 In injection period를 4번 반복하여 제작된 InAs quantum dot layer를 buffer로 사용하였으며, QD layer의 밀도는 $1{\mu}m^2$ 당 600개, height가 $6.2\;{\pm}\;2.0\;nm$, width가 $36.1\;{\pm}\;9.2\;nm$ 정도이다. 성장된 $2.8{\mu}m$ 두께의 InSb film의 특성을 분석해 보면 AFM 상에서의 root mean square (rms) roughness는 5.142nm정도이며, electron mobility는 340 K 에서 $41,352cm^2/Vs$, 1.8 K에서는 $4,215cm^2/Vs$ 정도를 나타내었다. 본 실험에서는 다른 실험과는 달리 InAs QD 을 buffer layer로 사용하였으며, silicon기판도 아무런 처리가 되지 않은 (001)기판을 사용하였으므로 기존의 다른 연구 결과와는 차별성을 가진다. 또한 buffer로 사용된 InAs quantum dot layer의 종류를 한 가지로 고정하고 실험을 하였지만 추후 더욱 다양한 밀도와 크기의 quantum dot layer를 적용시키고, 기존의 다른 논문에서 적용된 방법들을 추가로 적용시켜 본다면 mobility값은 더욱 증가할 것으로 생각된다. 이러한 연구를 통해 값이 싸고 구하기 쉬운 silicon기판상에 silicon에 비하여 더 좋은 특성을 갖는 III-V족 화합물 반도체 소자를 구현 할 수 있을 것으로 생각된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.209-209
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• 2010

Multiferroic properties of $BaTiO_3-CuFe_2O_4$ thin films grown on highly-textured Pt(111)/$TiO_2/SiO_2$/Si(100) substrates were studied. $CuFe_2O_4$ ceramic target was synthesized by mixing oxide powders of CuO, $Fe_2O_03$, $BaTiO_3$ ceramic target was also prepared separately. The film structure was of bi-layer type, where $BaTiO_3$ layer lies underneath of $CuFe_2O_4$ layer, where both layers were grown by pulsed laser deposition technique. We will report the ferroelectric and magnetic properties of $BaTiO_3-CuFe_2O_4$ bi-layer films in some detail.

• Transactions on Electrical and Electronic Materials
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• v.13 no.1
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• pp.43-46
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• 2012

Organic solar cell devices were fabricated using poly[9-(1-octylnonyl)-9H-carbazole-2.7-diyl]-2.5-thiophenediyl-2.1.3-benzothiadiazole-4.7-diyl-2.5-thiophenediyl] PCDTBT/ [6,6]-phenyl $C_{71}$ butyric acid methyl ester (PC71BM) active layer deposited by spin coating. Moreover, the relationship between solar cell performance and buffer layer thickness was investigated by spin coating speed and AFM imaging of the buffer layer surface. The performance of the organic solar cell with spin-coated active layer was then evaluated, and the power conversion efficiency of the solar cell was determined to be > 5%.

• Journal of Surface Science and Engineering
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• v.30 no.2
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• pp.111-120
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• 1997

The growth kinetion of $CuCl_x$ layer on Cu was investigated using $Cl_2$ gas with/without plasma. The etching kinetics ofit was also studied, in which PEt3 gas as well as $Cl_2$ gas were used. when plasma and DC bias were applied, not only the growth rate of $CuCl_x$ layer but also the surface concentration of Cl in $CuCl_x$ layer drastically increased. The growth mode is divided into three regimes, where the thinkness $CuCl_x$ layer ise proportional to t, lo9g $T^{1/2}$ , respectively, whether plasma, is applied or not. These three regime. It is also identified that the eath rate of Cu is drastically increased as the $Cl_2$ pressure is increased. However, when plasma and DC bias were applied, the etching rate is decreased, and ClCu-P-U layer is formed. in addition, as the etching time is increased, the surface concentration of Cl is increased and $CuCl_2$ formed partially.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.50 no.6
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• pp.442-446
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• 2005

This study was conducted to obtain basic information on the utilization of wheat flour for good organoleptic evaluation score. Wheat seed was milled by Buhler test mill. Volatile flavor compounds of five milling fractions such as Break $I{\cdot}II (B_1+B_2)$, Reduction I ($R_1$), Reduction II ($R_2$), Bran and Short were determined and their differences were discussed. There was significant difference in quantity of flavor compounds but no difference in qualitative composition among milling fractions. The outer layer of wheat endosperm ($R_2$ layer) showed higher amount of m-xylene and n-butanol in volatile flavor com­pounds compared with inner endosperm layer ($B_1,\;B_2,\;R_1$). The $R_2$ layer showed quantitatively higher composition of major flavor compounds than inner endosperm layer ($B_1,\;B_2,\;R_1$). This result points out that the $R_2$ layer exhibited stronger flavor than $B_1,\;B_2$, and Rl layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.267-270
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• 2003

We have studied the interfacial diffusion phenomena and the role of ${\alpha}-Al_2O_3$ buffer layer as a diffusion barrier in the $Ba-ferrite/SiO_2$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite ($1900-{\AA}-thick)/SiO_2$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_2O_3$ buffer layer ($110-{\AA}-thick$) in the interface of $Ba-ferrite/SiO_2$ thin film. During the annealing of $Ba-ferrite/{\alpha}-Al_2O_3/SiO_2$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The smooth interface of the film was also clearly shown by the cross-sectional FESEM. The magnetic properties, such as saturation magnetization 3nd intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_2O_3$ buffer layer. Our study suggests that the ${\alpha}-Al_2O_3$ buffer layer act as a useful interfacial diffusion barrier in the $Ba-ferrite/SiO_2$ thin films.

• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.229-232
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• 2005

Direct characterization of band alignment at chemical bath deposition $(CBD)-CdS/Cu_{0.93}(In_{1-x}Ga_x)Se_2$ has been carried out by photoemission spectroscopy (PES) and inverse photoemission spectroscopy (IPES). Ar ion beam etching at the condition of the low ion kinetic energy of 400 eV yields a removal of surface contamination as well as successful development of intrinsic feature of each layer and the interfaces. Especially interior regions of the wide gap CIGS layers with a band gap of $1.4\~1.6\;eV$ were successfully exposed. IPES spectra revealed that conduction band offset (CBO) at the interface region over the wide gap CIGS of x = 0.60 and 0.75 was negative, where the conduction band minimum of CdS was lower than that of CIGS. It was also observed that an energy spacing between conduction band minimum (CBM) of CdS layer and valance band maximum (VBM) of $Cu_{0.93}(In_{0.25}Ga_{0.75})Se_2$ layer at interface region was no wider than that of the interface over the $Cu_{0.93}(In_{0.60}Ga_{0.40})Se_2$ layer.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.244.2-244.2
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• 2011

We introduce a novel and robust method for the preparation of nanocomposite multilayers, which allows the excellent photoluminescent (PL) properties as well as the accurate control over the composition and dimensions of multilayers. By exchanging the oleic acid stabilizers of CdSe@ZnS quantum dots (QDs) synthesized in organic solvent with 2-bromo-2-methylpropionic acid (BMPA) in the same solvent, these nanoparticles were be alternately deposited by nucleophilic substitution reaction with highly branched poly(amidoamine) dendrimer (PAMA) through layer-by-layer (LbL) assembly process. Our approach does not need to be transformed into the water-dispersible nanoparticles with electrostatic or hydrogen-bonding groups, which can deteriorate their inherent properties, for the built-up of multilayers. The nanocomposite multilayers including QDs exhibited the strong PL properties achieving densely packed surface coverage as well as long-term PL stability under atmospheric conditions in comparison with those of conventional LbL multilayers based on electrostatic interaction. Furthermore, we demonstrate that the flexible multilayer films with optical properties can be easily prepared using nucleophilic substitution reaction between bromo and amino groups in organic media. This robust and tailored method opens a new route for the design of functional film devices based on nanocomposite multilayers.

• Proceedings of the KIEE Conference
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• 2000.11a
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• pp.236-242
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• 2000

NZP velocities were investigated on Ag sheathed multi filamentary Bi-2223 tape and direction type HTS cable. The critical current($I_c$) of Ag sheathed Bi-2223 tape and direction type HTS cable were 12 A, 63 A at 77 K, 0 T. NZP velocities of tape with two condition of DC and AC were almost same at each temperature. In case of DC, the NZP velocities of numerical analysis and experiment were almost same. NZP velocities of direction type HTS cable were 1.9-2.4 cm/sec. The result shows that the total transport current of spiral type HTS cable in $LN_2$ was 475[A], and transport current passed through almost the outer layer (2-layer). Also, AC transport losses in outer layer of HTS cable was proportion to $I^2$ and higher than losses of inner layer. And in case of $I_p=I_c$, calculated numerical loss density was concentrated on the edge of tape and most of loss density in cable was distributed outer layer more than inner layer.

• Journal of Information Display
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• v.10 no.4
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• pp.137-142
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• 2009

Transparent top-gate Al-Zn-Sn-O (AZTO) thin-film transistors (TFTs) with an $Al_2O_3$ protective layer (PL) on an active layer were studied, and a transparent 2.5-inch QCIF+AMOLED (active-matrix organic light-emitting diode) display panel was fabricated using an AZTO TFT backplane. The AZTO active layers were deposited via RF magnetron sputtering at room temperature, and the PL was deposited via two different atomic-layer deposition (ALD) processes. The mobility and subthreshold slope were superior in the TFTs annealed in vacuum and with oxygen plasma PLs compared to the TFTs annealed in $O_2$ and with water vapor PLs, but the bias stability of the TFTs annealed in $O_2$ and with water vapor PLs was excellent.