• Title/Summary/Keyword: layer 2

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Sticking Characteristics in BiSrCaCuO Thin Film Fabricated by Layer-by-Layer Sputtering Method (순차 스퍼터법으로 제작한 BiSrCaCuO 박막의 부착 특성)

  • Cheon, Min-Woo;Park, Yong-Pil;Kim, Jeong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05d
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    • pp.45-48
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    • 2003
  • BiSrCaCuO thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.

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The Thickness Change of the Phosphor Ink Layer and the Dielectric Ink Layer of a Inorganic Powder EL Lamp That was produced by Screen Printing Technique (스크린 인쇄 기법에 의해 제작된 분산형 무기 EL 램프의 형광층 및 유전층의 두께 변화)

  • Moon, Kil-Hwan;Kang, Young-Reep
    • Journal of the Korean Graphic Arts Communication Society
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    • v.29 no.2
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    • pp.83-92
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    • 2011
  • A inorganic powder EL lamp was made by screen printing technique with phosphor ink and dielectric ink. The thickness change of a phosphor ink layer and a dielectric ink layer were not influenced on dielectric content, but rely on phosphor size and vehicle. Once finishing screen printing technique with phosphor ink and dielectric ink, and its surface has been printed again before not drying of phosphor ink and dielectric ink. Then phosphor ink and dielectric ink were not transferred. The electric capacity of inorganic powder EL lamp was more influenced on dielectric content than the thickness of dielectric ink layer, and it was more dependent on the thickness of phosphor ink layer than the thickness of dielectric ink layer.

Calculation of three-dimensional boundary layer near the plane of symmetry of an automobile configuration (자동차 중앙대칭단면 부근의 3차원경계층 계산)

  • 최장섭;최도형;박승오
    • Journal of the korean Society of Automotive Engineers
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    • v.10 no.2
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    • pp.61-69
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    • 1988
  • The finite-difference three-dimensional boundary layer procedure of Chang and Patel is modified and applied to solve the boundary layer development on the automobile surface. The inviscid pressure distribution needed to solve the boundary layer equations is obtained by using a low order panel method. The plane of symmetry boundary layer exhibits the strong streamline divergence up to the midbody and convergence thereafter. The streamline divergence in front of the windshield helps the boundary layer to overcome the sever adverse pressure gradient and avoid the separation. The relaxation of the pressure right after the top of the wind-shield, on the other hand, makes the overly thinned boundary layer to readjust and prompts the streamlines to converge into the symmetry plane before the external streamlines do. The three-dimensional characteristics are less apparent after the midbody and the boundary layer is similar to that of the two-dimensional flow. The results of the off-plane-of-symmetry boundary layer are also presented.

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Low Temperature Encapsulation-Layer Fabrication of Organic-Inorganic Hybrid Thin Film by Atomic Layer Deposition-Molecular Layer Deposition

  • Kim, Se-Jun;Kim, Hong-Beom;Seong, Myeong-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.274-274
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    • 2013
  • We fabricate encapsulation-layer of OLED panel from organic-inorganic hybrid thin film by atomic layer deposition (ALD) molecular layer deposition (MLD) using Al2O3 as ALD process and Adipoyl Chloride (AC) and 1,4-Butanediamine as MLD process. Ellipsometry was employed to verify self-limiting reaction of MLD. Linear relationship between number of cycle and thickness was obtained. By such investigation, we found that desirable organic thin film fabrication is possible by MLD surface reaction in monolayer scale. Purging was carried out after dosing of each precursor to eliminate physically adsorbed precursor with surface. We also confirmed roughness of the organic thin film by atomic force microscopy (AFM). We deposit AC and 1,4-Butanediamine at $70^{\circ}C$ and investigated surface roughness as a function of increasing thickness of organic thin film. We confirmed precursor's functional group by IR spectrum. We calculated WVTR of organic-inorganic hybrid super-lattice epitaxial layer using Ca test. WVTR indicates super-lattice film can be possibly use as encapsulation in flexible devices.

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Cross-Layer Design for Mobile Internet Services in Cellular Communications Systems

  • Jeong, Dong-Geun
    • Information and Communications Magazine
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    • v.24 no.2
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    • pp.64-73
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    • 2007
  • Recently, cross-layer design approach has been greatly attracting researchers' attention as an alternative for improving the performance of wireless data networks. The main reason why cross-layer approaches are particularly well suited for wireless networks is that there exists direct coupling between physical layer and upper layers. Therefore, with cross-layer approach, the protocol designers try to exploit the interaction between layers and promote adaptability at all layers, based on information exchange between layers. In this article we focus on the cross-layer engineering for high data-rate mobile Internet services through cellular networks. First, the general considerations in cross-layer engineering are outlined. Then, we discuss the common approach in literatures, which mainly deals with adaptability in physical and medium access control layer. Finally, we show that the cross-layer engineering taking account of all layers is more adequate for the mobile Internet services cellular network.

Retardation of Massive Spalling by Palladium Layer Addition to Surface Finish (팔라듐 표면처리를 통한 Massive Spalling 현상의 억제)

  • Lee, Dae-Hyun;Chung, Bo-Mook;Huh, Joo-Youl
    • Korean Journal of Metals and Materials
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    • v.48 no.11
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    • pp.1041-1046
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    • 2010
  • The reactions between a Sn-3.0Ag-0.5Cu solder alloy and electroless Ni/electroless Pd/immersion Au (ENEPIG) surface finishes with various Pd layer thicknesses (0, 0.05, 0.1, 0.2, $0.4{\mu}m$) were examined for the effect of the Pd layer on the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow at $235^{\circ}C$. The thin layer deposition of an electroless Pd (EP) between the electroless Ni ($7{\mu}m$) and immersion Au ($0.06{\mu}m$) plating on the Cu substrate significantly retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow. Its retarding effect increased with an increasing EP layer thickness. When the EP layer was thin (${\leq}0.1{\mu}m$), the retardation of the massive spalling was attributed to a reduced growth rate of the $(Cu,Ni)_6Sn_5$ layer and thus to a lowered consumption rate of Cu in the bulk solder during reflow. However, when the EP layer was thick (${\geq}0.2{\mu}m$), the initially dissolved Pd atoms in the molten solder resettled as $(Pd,Ni)Sn_4$ precipitates near the solder/$(Cu,Ni)_6Sn_5$ interface with an increasing reflow time. Since the Pd resettlement requires a continuous Ni supply across the $(Cu,Ni)_6Sn_5$ layer from the Ni(P) substrate, it suppressed the formation of $(Ni,Cu)_3Sn_4$ at the $(Cu,Ni)_6Sn_5/Ni(P)$ interface and retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer.

Microstructure of Al-Si Coated Layer in PWA 1426 Alloy (PWA 1426 합금에서 Al-Si 코팅층의 미세조직)

  • Ahn, J.C.;Lee, K.K.
    • Journal of the Korean Society for Heat Treatment
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    • v.12 no.1
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    • pp.47-54
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    • 1999
  • Microstructure of Al-Si coated PWA 1426 alloy was studied. Diffusion coated specimens were heat treated for 4hr at $870{\sim}1087^{\circ}C$ and then were examined the changes of microstructure and interfacial compound by optical microscopy, SEM and EDS. According to the result of EDS, it is supposed that the coated layer was composed of $Ni_2Al_3$. When diffusion treatment was conducted at $1087^{\circ}C$, coated layer varied from $Ni_2Al_3$ to NiAl phase and composed of mixed, denuded and inter-diffusion layer.

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Study on Characteristics of Micro Patterned Copper Electrodeposition according to Parameters in Laser Beam Machining (레이저빔 가공 인자에 따른 구리도금 미세 패터닝 특성 연구)

  • Shin, Hong Shik
    • Journal of Institute of Convergence Technology
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    • v.5 no.2
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    • pp.21-25
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    • 2015
  • This paper proposes a fabrication process of deposited layer with micro patterns that uses a combination of a pulsed laser beam machining and an electrodeposition. This process consists of the electrodeposition and the laser beam machining. The deposited layer on metal can be selectively eliminated by laser ablation. As a result, the deposited layer with micro patterns can be fabricated without a mask. The characteristics of the deposited layer on stainless steel were investigated according to the average power and marking speed in the pulsed laser beam machining. The optimal laser beam conditions for precise micro patterning of the deposited layer were determined. Finally, the deposited copper layer with micro text was successfully fabricated by the pulsed laser beam machining.

Epitaxial Growth of BSCCO Type Structure in Atomic Layer by Layer Deposition

  • Yang, Sung-Ho;Park, Yong-Pil;Jang, Kyung-Uk;Oh, Geum-Gon;Lee, Joon-Ung
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2000.11a
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    • pp.97-100
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    • 2000
  • Si$_2$Sr$_2$CuO$\sub$x/(Bi(2201)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition, 10 %-ozone/oxygen mixture gas of typical 5.0 ${\times}$ 10$\^$-5/ Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then c-axis oriented Bi(2201) is grown.

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Surface displacements due to tunneling in granular soils in presence and absence of geosynthetic layer under footings

  • Rebello, Nalini E.;Shivashankar, R.;Sastry, Vedala R.
    • Geomechanics and Engineering
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    • v.15 no.2
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    • pp.739-744
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    • 2018
  • This paper presents the results of numerical modeling studies on the effect of displacements of tunneling in granular soils. Presence of building loads is considered, to find displacement generated at the surface on tunnel. Effect of varying eccentricities of building is simulated, to find influence of building on vertical and horizontal displacement. Studies were carried out in two cases of with and without a geosynthetic layer installed at the bottom of the footing. Results of analysis revealed, the presence of geosynthetic layer under footing, with building placed on centre line, reduced the surface displacements compared to displacement generated without geosynthetic layer. Presence of geosynthetic layer under footing had a dominant effect in reducing displacements in high storey structures. However, when the building was shifted to greater eccentricities from centre line, presence of geosynthetic layer, led to insignificant reduction of displacements on the centre line at the surface.