• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.91-91
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• 2011

박막태양전지의 높은 효율개선을 위해 TCO층과 p-layer 사이에 buffer layer를 넣어 Voc와 FF를 개선하는 연구가 진행되고 있다. 이에 buffer layer의 활성화 정도를 높이기 위해 p-layer을 최적화 시키고자한다. 이 실험에서 a-Si:B에 N2O를 도핑시켜 Bandgap Energy 2.0 eV, Activation Energy 0.4 eV인 a-SiOx:B 막을 제작하여 buffer layer로 사용하였고 이 buffer layer에 의한 cell의 효율 향상을 최적화 하기위해 ASA simulation을 이용해 p-layer의 Bandgap Energy와 Activation Energy를 가변 하여 보았다. 실험결과 p-layer의 Bandgap Energy 1.95 eV에서 buffer layer와 p-layer사이에서의 barrier가 최소가 됨을 확인 할 수 있었고 Actication Energy 0.5 eV에서 가장 높은 Voc를 가짐을 알 수 있었다. 본 연구를 통해 p-layer의 Bandgap Energy 1.95 eV, Activation Energy 0.5 eV에서 buffer layer를 활성화시키기 위한 p-layer의 최적화 조건을 구현해 볼 수 있었다.

• Structural Engineering and Mechanics
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• v.69 no.1
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• pp.43-50
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• 2019

In this research, the effect of bedding layer on the tensile failure mechanism of rocks has been investigated using PFC2D. For this purpose, firstly calibration of PFC2d was performed using Brazilian tensile strength. Secondly Brazilian test was performed on the bedding layer. Thickness of layers were 5 mm, 10 mm and 20 mm. in each thickness layer, layer angles changes from $0^{\circ}$ to $90^{\circ}$ with increment of $15^{\circ}$. Totally, 21 model were simulated and tested by loading rate of 0.016 mm/s. The results show that when layer angle is less than 15, tensile cracks initiates between the layers and propagate till coalesce with model boundary. Its trace is too high. With increasing the layer angle, less layer mobilizes in failure process. Also, the failure trace is very short. It's to be noted that number of cracks decrease with increasing the layer thickness. Also, Brazilian tensile strength is minimum when bedding layer angle is between $45^{\circ}$ and $75^{\circ}$. The maximum one is related to layer angle of $90^{\circ}$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.5
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• pp.972-978
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• 2016

MACsec is a cryptographic function that operates on Layer 2, the international standard defined in the IEEE 802.1AE. As industries such as IoT(Internet of Things) devices are receiving attention recently are connected to the network and Internet traffic is increasing rapidly, and is exposed to the risk of a variety of Internet attacks. Traditional network security technologies were often made in Layer 3, such as IPsec. However, to be increased as rapidly as the current traffic situation is complicated, and became interested in the security function of protecting the entire traffic instead of for a specific application or protocol. It appeared as these technologies is technology MACsec technology to protect all traffic in Layer 2. In this paper, we propose a Layer 2 security technology adapter MACsec MACsec a technology that allows you to simply and easily add them to the existing Layer 2 networks.

• Current Photovoltaic Research
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• v.6 no.1
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• pp.21-26
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• 2018

Beside several advantages, the PV power generation as a clean energy source, is still below the supply level due to high power generation cost. Therefore, the interest in fabricating low-cost thin film solar cells is increasing continuously. $Cu_2O$, a low cost photovoltaic material, has a wide direct band gap of ~2.1 eV has along with the high theoretical energy conversion efficiency of about 20%. On the other hand, it has other benefits such as earth-abundance, low cost, non-toxic, high carrier mobility ($100cm^2/Vs$). In spite of these various advantages, the efficiency of $Cu_2O$ based solar cells is still significantly lower than the theoretical limit as reported in several literatures. One of the reasons behind the low efficiency of $Cu_2O$ solar cells can be the formation of CuO layer due to atmospheric surface oxidation of $Cu_2O$ absorber layer. In this work, atomic layer deposition method was used to remove the CuO layer that formed on $Cu_2O$ surface. First, $Cu_2O$ absorber layer was deposited by electrodeposition. On top of it buffer (ZnO) and TCO (AZO) layers were deposited by atomic layer deposition and rf-magnetron sputtering respectively. We fabricated the cells with a change in the deposition temperature of buffer layer ranging between $80^{\circ}C$ to $140^{\circ}C$. Finally, we compared the performance of fabricated solar cells, and studied the influence of buffer layer deposition temperature on $Cu_2O$ based solar cells by J-V and XPS measurements.

• Proceedings of the Acoustical Society of Korea Conference
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• spring
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• pp.381-384
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• 2002

이종 매질에서 초음파전달은 각 매질의 음향임피던스에 영향을 받는다. 초음파진동자로 사용되는 압전소자와 매질로 가장 많이 사용되는 물은 음향임피던스 차이가 크므로 경계면에서 투과율이 감소한다. 이를 개선하기 위해 압전소자와 물 사이에 음향정합층을 삽입하여 사용한다. 정합층은 1 layer로 사용되는 경우도 있지만, 넓은 대역폭을 요구하는 분야에서는 2 layer가 사용된다. 본 논문에서는 1 layer 정합층를 갖는 초음파 트랜스듀서에 대해 시간영역에서 해석하는 기법을 분석하였으며, 이를 근거로 매질 사이의 물리적 특성을 고려하여 2 layer 정합층을 갖는 초음파트랜스듀서를 해석하였다. 해석결과 2 layer 정합층일 경우 1 layer에 비해 공진주파수에서의 이득은 감소하였으나 대역폭이 증가됨을 알 수 있었다.

• Journal of the Optical Society of Korea
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• v.1 no.2
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• pp.116-119
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• 1997

Highly quantum efficient and multi-color emissible polymer light emitting devices have been realized utilizing poly (1-dodecyloxy-4-methyl-1, 3-phenylene)(2, 5"-terthienylene)(hereafter, mPTTh polymer) as an emitting layer and tris(8-hydroxyquinoline) aluminum (Alq3) as an electron transport layer. A single layer EL device of mPTTh polymer emits orange-colored light. EL efficiency increases as the thickness of Alq3 layer increases, but the emission color becomes visually broad when the Alq3 layer thickness is greater than 30nm since the relative peak intensity of green EL from Alq3 layer grows. EL color is changed from orange to greenish orange as the thickness of Alq3 layer grows. EL color is changed from orange to greenish orange as the thickness of Alq3 layer increases. EL efficiency of the double layer device was greatly enhanced by 3000 times compared with that of a single layer device. Alq3 layer in device acts as a hole blocking electron transporting layer and an emitting layer as a function of the thickness of Alq3 layer.ayer.

• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.242-245
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• 2013

Sn-doped $In_2O_3$ (ITO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on bare glass and $TiO_2$-deposited glass substrates to investigate the effect of a $TiO_2$ buffer layer on the electrical and optical properties of ITO films. The thicknesses of $TiO_2$ and ITO films were kept constant at 5 and 100 nm, respectively. As-deposited ITO single layer films show an optical transmittance of 75.9%, while $ITO/TiO_2$ bi-layered films show a lower transmittance of 76.1%. However, as-deposited $ITO/TiO_2$ films show a lower resistivity ($9.87{\times}10^{-4}{\Omega}cm$) than that of ITO single layer films. In addition, the work function of the ITO film is affected by the $TiO_2$ buffer layer, with the $ITO/TiO_2$ films having a higher work-function (5.0 eV) than that of the ITO single layer films. The experimental results indicate that a 5-nm-thick $TiO_2$ buffer layer on the $ITO/TiO_2$ films results in better performance than conventional ITO single layer films.

• Korean Journal of Materials Research
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• v.30 no.11
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• pp.621-626
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• 2020

This study is aimed at preparing and evaluating the plasma resistance of YAS (Y₂O₃-Al₂O₃-SiO₂) coating layer with crystalline YAG phase contents. For this purpose, YAS frits with controlled phase contents are prepared and melt-coated on sintered Al₂O₃ ceramics. Then, the results of phase analysis of crystalline YAS coating layer are compared to that of YAS frits, and discussed with regard to the plasma resistance of the YAS coating layer. The phase contents of the YAS frit change in a manner different from that of the prepared YAS coating layer, presumably owing to the composition change of YAS frit during the melt-coating process. The plasma resistance of the YAS coating layer is shown to increase with the YAG phase contents in the coating layer. Comparing the weight loss of YAS coating layer with those of commercial Y₂O₃, Al₂O₃, and quartz ceramics, the plasma resistance of the prepared YAS coating layer is 8 times higher than that of quartz and 3 times higher than that of Al₂O₃; this layer shows 70 % of the resistance of Y₂O₃.

• Journal of the Korean Society for Heat Treatment
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• v.28 no.6
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• pp.291-295
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• 2015

IGZO single layer and $IGZO/TiO_2$ bi-layered films were deposited on glass substrate at room temperature with radio frequency magnetron sputtering to investigate the effect of $TiO_2$ buffer layer on the electrical and optical properties of the films. For all deposition, the thickness of IGZO and $TiO_2$ Buffer layer was kept at 100 and 5 nm, respectively. In a comparison of figure of merit, IGZO films with a 5-nm-thick $TiO_2$ buffer layer show the higher figure of merit ($8.40{\times}10^{-5}{\Omega}^{-1}$) than that of the IGZO single layer films ($6.23{\times}10^{-5}{\Omega}^{-1}$) due to the enhanced optical transmittance and the decreased sheet resistance of the films. The observed results mean that a 5 nm thick $TiO_2$ buffer layer in the $IGZO/TiO_2$ films results in better electrical and optical performance than conventional IGZO single layer films.

• Journal of Digital Convergence
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• v.11 no.5
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• pp.313-318
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• 2013

QoS in wireless multimedia sensor networks is an important issue to enhance streaming media service. This paper proposes a new 2-layer based QoS evaluation scheme for enhancing the streaming media QoS of wireless multimedia sensor networks. The proposed scheme performs the fuzzy relevance to control the streaming between application layer and network layer, and it performs 2-layer mapping process to enhance the transmission reliability and throughput. The simulation results show that the proposed scheme achieves improved performance in packet control ratio, transmission reliability, and delay overhead ratio compared with those of other existing schemes.