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XRD Patterns and Bismuth Sticking Coefficient in $Bi_2Sr_2Ca_nCu_{n+1}O_y(n\geq0)$ Thin Films Fabricated by Ion Beam Sputtering Method

  • Yang, Seung-Ho;Park, Yong-Pil
    • Journal of information and communication convergence engineering
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    • v.4 no.4
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    • pp.158-161
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    • 2006
  • [ $Bi_2Sr_2Ca_nCu_{n+1}O_y(n{\geq}0)$ ] thin film is fabricatedvia two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

Optimization of Electrochemical Etching Parameters in Porous Silicon Layer Transfer Process for Thin Film Solar Cell (초박형 태양전지 제작에 Porous Silicon Layer Transfer기술 적용을 위한 전기화학적 실리콘 에칭 조건 최적화에 관한 연구)

  • Lee, Ju-Young;Koo, Yeon-Soo;Lee, Jae-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.18 no.1
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    • pp.23-27
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    • 2011
  • Fabrication of porous silicon(PS) double layer by electrochemical etching is the first step in process of ultrathin solar cell using PS layer transfer process. The porosity of the porous silicon layer can be controlled by regulating the formation parameters such as current density and HF concentration. PS layer is fabricated by electrochemical etching in a chemical mixture of HF and ethanol. For electrochemical etching, highly boron doped (100) oriented monocrystalline Si substrates was used. Ths resistivity of silicon is $0.01-0.02\;{\Omega}{\cdot}cm$. The solution composition for electrochemical etching was HF (40%) : $C_2H_5OH$(99 %) : $H_2O$ = 1 : 1 : 2 (by volume). In order to fabricate porous silicon double layer, current density was switched. By switching current density from low to high level, a high-porosity layer was fabricated beneath a low-porosity layer. Etching time affects only the depth of porous silicon layer.

A Study on the Effect of Mid Layer on Supersonic 2D Double Shear Layer (초음속 2차원 2단 혼합층에서 중간층의 역할)

  • Kim, Dongmin;Baek, Seungwook
    • Journal of the Korean Society of Propulsion Engineers
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    • v.19 no.1
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    • pp.9-17
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    • 2015
  • The basic flow configuration is composed of a plane, double shear layer where relatively thin mid gas layer is sandwiched between air and fuel stream. The present study describes numerical investigations concerning the combustion enhancement according to a variation of mid layer thickness. In this case, the effect of heat release in turbulent mixing layers is important. For the numerical solution, a fully conservative unsteady $2^{nd}$ order time accurate sub-iteration method and $2^{nd}$ order TVD scheme are used with the finite volume method including k-${\omega}$ SST model. The results consists of three categories; single shear layer consists of fuel and air, inert gas sandwiched between fuel and air, cold fuel gas sandwiched between fuel and air. The numerical calculations has been carried out in case of 1, 2, 4 mm of mid layer thickness. The height of total gas stream is 4 cm. The combustion region is broadened in case of inert gas layer of 2, 4 mm thickness and cold fuel layer of 4 mm thickness compared with single shear layer.

The Analytic and Numerical Solutions of the 1$\frac{1}{2}$-layer and 2$\frac{1}{2}$-layer Models to the Strong Offshore Winds.

  • Lee, Hyong-Sun
    • Journal of the korean society of oceanography
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    • v.31 no.2
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    • pp.75-88
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    • 1996
  • The analytic and numerical solution of the 1$\frac{1}{2}$-layer and 2$\frac{1}{2}$-layer models are derived. The large coastal-sea level drop and the fast westward speed of the anticyclonic gyre due to strong offshore winds using two ocean models are investigated. The models are forced by wind stress fields similar in structure to the intense mountain-pass jets(${\sim}$20 dyne/$cm^{2}$) that appear in the Gulfs of Tehuantepec and Papagayo in the Central America for periods of 3${\sim}$7 days. Analytic and numerical solutions compare favorably with observations, the large sea-level drop (${\sim}$30 cm) at the coast and the fast westward propagation speeds (${\sim}$13 km/day) of the gyres. The coastal sea-level drop is enhanced by several factors: horizontal mixing, enhanced forcing, coastal geometry, and the existence of a second active layer in the 2$\frac{1}{2}$-layer model. Horizontal mixing enhances the sea-level drop because the coastal boundary layer is actually narrower with mixing. The forcing ${\tau}$/h is enhanced near the coast where h is thin. Especially, in analytic solutions to the 2$\frac{1}{2}$-layer model the presence of two baroclinic modes increases the sea-level drop to some degree. Of theses factors the strengthened forcing ${\tau}$/h has the largest effect on the magnitude of the drop, and when all of them are included the resulting maximum drop is -30.0 cm, close to observed values. To investigate the processes that influence the propagation speeds of anticyclonic gyre, several test wind-forced calculations were carried out. Solutions to dynamically simpler versions of the 1$\frac{1}{2}$-layer model show that the speed is increased both by ${\beta}$-induced self-advection and by larger h at the center ofthe gyres. Solutions to the 2$\frac{1}{2}$-layer model indicate that the lower-layer flow field advects the gyre westward and southward, significantly increasing their propagation speed. The Papagayo gyre propagates westward at a speed of 12.8 km/day, close to observed speeds.

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Current Distribution and Numerical Analysis of AC Losses on Multi-Layer HTS Cable (다층 고온 초전도 케이블의 전류 분포 및 교류손실 해석)

  • 김영석;이병성;장현만;곽민환;김상현
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.452-455
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    • 2000
  • Superconducting power cable is one of the most promising energy application of high-T$_{c}$ superconductors (HTS). A prototype HTS cable have been constructed multi-layer cable using Bi-2223 tape and tested. The AC transport losses under self field were investigated at 77K on the 19 filamentary tape and multi-layer HTS cables. And we carried out numerical analysis using bean model. The result shows that the total transport current of HTS cable in L$N_2$ was 475[A], and transport current passed through almost the outer layer (2-layer). Also, AC transport losses in outer layer of HTS cable was proportion to I$^2$ and higher than losses of inner layer. In case of Ip=Ic, calculated numerical loss density was concentrated on the edge of tape and most of loss density in cable was distributed outer layer more than inner layer. As magnetic distribution was concentrated on outer layer.r.

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Epitaxial Growth of BSCCO Films by IBS Method (IBS법에 의한 BSCCO 박막의 에피택셜 성장)

  • 양승호;박용필
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2002.05a
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    • pp.627-630
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    • 2002
  • Bi$_2$Sr$_2$CuOx(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion bean sputtering method. 10 wt% and 90 wt% ozone mired with oxygen were used with ultraviolet light irradiation to assist oxidation. XRD and RHEED investigations revealed that a buffer layer is formed at the early stage of deposition (less than 10 unit cell), and then c-axis oriented Bi-2201 grows on top of it.

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Changes of the Amount of Forest Floor Organic Matter in Deciduous Forest along the Altitudinal Gradient (낙엽활엽수림에 있어서 표고 경도에 따른 임상유기물량의 변화)

  • Yi, Myong-Jong
    • Journal of Forest and Environmental Science
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    • v.11 no.1
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    • pp.72-80
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    • 1995
  • Altitudinal effects on the accumulation of O layer were examined for deciduous broad-leaved forests in the experimental forest of Kangwon National University. There found a marked increased towards the higher altitudes in the thickness of O layer. These trends could be observed conspicuously on the F2 and H layers. The relation between thickness (X, cm) and dry weight (Y, $kg/m^2$) of O layer was approximated by linear regression equations;Y($kg/m^2$ = aX(cm). The values of coefficient "a" for the F2, H and F2+H layers were 0.43, 0.61 and 0.53, respectively. Bulk densities of the accumulated organic matter estimated nearly to be $45g/dm^2$ in F2 layer, $60g/dm^2$ in H layer and $55g/dm^2$ in F2+H layer. The amount of O layer ranged from 13ton/ha for the forest at 280m in altitude to 41ton/ha for the upper forest at 710m in altitude. Among these total amount of the O layer, F1, F2 and H layer occupied to be 5~10ton/ha, 5~11ton/ha and 13~40ton/ha, respectively.

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Epitaxy Growth of the Thin Films Fabricated by Layer by Layer Method (Layer by Layer 법으로 제작한 박막의 에피택셜 성장)

  • Kim, Tae-Gon;Cheon, Min-Woo;Yang, Sung-Ho;Park, Yong-Pil;Park, No-Bong;Lee, Hee-Kab
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.529-530
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    • 2006
  • $Bi_2Sr_2CuO_x$ thin films have been fabricated by atomic layer-by-layer deposition using the ion beam sputtering method. During the deposition, 10 and 90 wt%-ozone/oxygen mixture gas of typical pressure of $1{\sim}9{\times}10^{-5}\;Torr$ are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

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A simulation of high efficiently thin film solar cell with buffer layer (버퍼층 삽입을 통한 박막 태양전지의 고효율화 시뮬레이션)

  • Kim, Heejung;Jang, Juyeon;Baek, Seungsin;Yi, Junsin
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.11a
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    • pp.64.2-64.2
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    • 2011
  • a-Si 박막 태양전지는 a-Si:H을 유리 기판 사이에 주입해 만드는 태양전지로, 뛰어난 적용성과 경제성을 지녔으나 c-Si 태양전지에 비해 낮은 변환 효율을 보이는 단점이 있다. 변환 효율을 높이기 위한 연구 방법으로는 a-Si 박막 태양전지 단일cell 제작 시 high Bandgap을 가지는 p-layer를 사용함으로 높은 Voc와 Jsc의 향상에 기여할 수 있는데, 이 때 p-layer의 defect 증가와 activation energy 증가도 동시에 일어나 변환 효율의 증가폭을 감소시킨다. 이를 보완하기 위해 본 실험에서는 p-layer에 기존의 p-a-Si:H를 사용함과 동시에 high Bandgap의 buffer layer를 p-layer와 i-layer 사이에 삽입함으로써 그 장점을 유지하고 높은 defect과 낮은 activation energy의 영향을 최소화하였다. ASA 시뮬레이션을 통해 a-Si:H보다 high Bandgap을 가지는 a-SiOx 박막을 사용하여 p-type buffer layer의 두께를 2nm, Bandgap 2.0eV, activation energy를 0.55eV로 설정하고, i-type buffer layer의 두께를 2nm, Bandgap 1.8eV로 설정하여 삽입하였을 때 박막 태양전지의 변환 효율 10.74%를 달성할 수 있었다. (Voc=904mV, Jsc=$17.48mA/cm^2$, FF=67.97).

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