• Progress in Superconductivity and Cryogenics
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• v.6 no.4
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• pp.1-4
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• 2004

Three group samples with difference thickness of $CeO_2$ capping layer deposited by PLD were studied. Among them, one group $CeO_2$ films were deposited on stainless steel tape coated with IBAD- YSZ and $CeO_2$ buffer layer ($CeO_2$/IBAD-YSZ/SS); other two groups of $CeO_2 YSZ Y_2O_3$multi-layer were deposited on NiW substrates for fabrication of YBCO coated conductor through RABiTS approach. The pulsed laser deposition (PLD) and DC magnetron sputtering were employed to deposit these buffer layers. On the top of buffer layer, YBCO film was deposited by PLD. The effect of thickness of $CeO_2$ film on the texture of $CeO_2$ film and critical current density ($J_c$) of YBCO film were analyzed. For the case $CeO_2$ on $CeO_2$/IBAD-YSZ/SS, there was a self-epitaxy effect with the increase of $CeO_2$ film. For $YSZ/Y_2O_3$ NiW which was deposited by PLD or DC magnetron sputtering, there is not self-epitaxy effect. However, the capping layer of $CeO_2$ film deposited by PLD improved the quality of buffer layer for $YSZ/Y_2O_3$ which was deposited by DC magnetron sputtering, therefore increased the $J_c$ of YBCO film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.44-47
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• 2012

The $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in $TiO_2/Ag/TiO_2$ became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between $TiO_2$ and Ag. in order to prevent the oxidation of Ag layer in $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ structure. It was confirmed that $Si_3N_4$ layer is one of candidate materials acting as diffusin barrier between $TiO_2/Ag/TiO_2$.

• Korean Journal of Materials Research
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• v.9 no.4
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• pp.428-433
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• 1999

An objective of this study is to compare the characteristics of coating layer of plasma sprayed fine $Al_2O_3$ and those of layer by commercial $Al_2O_3$(Metco 105). The microstructure of fine $Al_2O_3$ coating layer was denser compared with commercial $Al_2O_3$ coating layer. The surface roughness$(R_a)$ of the layer by the fine $Al_2$O$_3$ was lower compared with that of commercial $Al_2O_3$. Thickness of splat for fine $Al_2O_3$ was $1.4\mu\textrm{m}$ while the commercial $Al_2O_3$ was $3.53\mu\textrm{m}$. The main phase existing in coating layer was of $\gamma-Al_2O_3$ and the fraction of $\alpha-Al_2O_3$ in fine $Al_2O_3$ coating layer was 8.39% and that of commercial $Al_2O_3$ was 13.79%. Microhardness was no great difference between the fine and commercial $Al_2O_3$ but deviation of the fine $Al_2O_3$ coating layer was relatively large. Accordingly, the strength of splat of the coating was expected that fine $Al_2O_3$was lower than commercial $Al_2O_3$ powder.

• Korean Journal of Materials Research
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• v.14 no.1
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• pp.52-58
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• 2004

The surface property and formation behavior of a boride layer formed on Ni-Cr-Mo steel in a plasma paste boronizing treatment were investigated. The plasma paste boronizing treatment was carried out at 973～1273 K for 1-7 hrs under the gas ratio of Ar:H$_2$ (2:1). The thickness of the boride layer increased with increasing temperature and time in the boronizing treatment. The cross-section of the boride layer was a tooth structure and the hardness was Hv 2000～2500. XRD analysis revealed that the compound was identified as FeB, $Fe_2$B, and mixed phase of FeB/$Fe_2$B in the boride layer formed at 973～1073 K, 1173K, and 1273K, respectively. The Ni-Cr-Mo alloy boronized at 1173-1273 K showed the best excellent wear resistance against the sand. As a results of corrosion test in 1 M $H_2$$SO_4$ solution, $Fe_2$B formed on the matrix alloy exhibited higher corrosion resistance than FeB.

• Journal of Surface Science and Engineering
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• v.31 no.6
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• pp.359-370
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• 1998

TiAl-based intermetallic compounds were electro-bornizel in the mixture of $Na_2B_4O_7$, KCL and LiCl in the termetature rage between 850 and $1000^{\circ}C$for various times (1-5 hours)under the fixed current density of 0.5 A/$cm^2$. The optimized composition of electrolyte in this work was decided to be 76.9 wt% $Na_2B_4O_7$-19.2 wt.%(0.7KCl-0.3LiCl) -3.9 wt.% al. The samples with boronized layer were investigated by SEM, XRD and EDS. The surface micro-hardness of boronized TiAl was also evaluated using Micro Vickers Hardness Tester. The sample, boronized at $900^{\circ}C$ for 4 hours in the above composition of electrolyte under the current density of 0.5 A/$\textrm{cm}^2$, has about 36$\mu\textrm{m}$ think layer on the surface, and its surface micro-hardness was measured to be 1263 Hv. From the results of SEM, XRD and EDS, the layer consisted of $TiB_2$ sublayer and Al-oxide sub layer. Al-depleted layer below the Al-oxide sudlayer was also detected. The activation energy for formation of boronized layer in this study was calculated as 178 Kcal/moleK.

• Korean Journal of Materials Research
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• v.16 no.1
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• pp.30-36
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• 2006

A novel method was proposed to grow an epitaxial $CoSi_2$ on (100)Si substrate. A $CoN_x$ interlayer was deposited by reactive sputtering of Co in an Ar+$N_2$ flow. From the Ti/Co/$CoN_x$/Si structure, a uniform and thin $CoSi_2$ layer was epitaxially grown on (100)Si by annealing above $700^{\circ}C$. Two amorphous layers were found at the $CoN_x$/Si interface, where the top layer has a silicon nitride (Si-N) bonding state with some Co content and the bottom layer has a Co-Si intermixing state. The SiNx amorphous layer seems to play a critical role of suppressing the diffusion of Co into Si substrate for the direct formation of epitaxial $CoSi_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.9-10
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• 2007

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition(ALD). And we studied the electrical characterization of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3\;at\;350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. The MOS capacitor of round-type was fabricated on Si substrates. Through TEM(Transmission Electron Microscope), XRD(X-ray Diffraction), capacitance-voltage(C-V) and current-voltage(I-V) analysis, the role of thin Hf metal layer for the better $HfO_2$/Si interface property was investigated.

• Journal of Welding and Joining
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• v.11 no.2
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• pp.74-85
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• 1993

Effect of Si metal powders addition with the plasma transferred arc(PTA) overlaying process on characteristics of the alloyed layer in aluminum alloy(A5083) has been investigated. The overlaying conditions were 175-250A in plasma arc current, 500mm/min in travel speed, the 5-20g/min in powder feeding rate. Main results obtained are summarized as follows. 1)Sufficient size of molten pool on surface of base metal was required for forming an alloyed layer; in a fixed travel, the formation of alloyed layer with clear and beautiful surface depend upon the plasma arc current and powder feeding rate; the greater plasma arc current and the smaller powder feeding rate were, the better bead was formed. Optimum alloyed conditions by which an excellent alloyed bead obtained was 225A in plasma arc current. PTA process made it possible to form an alloyed layer with up to 67wt% Si. 2)Microstructure in the alloyed layer was in accord with prediction from the Al-Si phase diagram 3)The hardness of the alloyed layer increased in proportion to Si content. 4)As volume fraction of primary Si increased, the specific wearness of the alloyed layer was significantly improved. However, no further improvement was found when the volume fraction was greater than about 30%. 5)Utilizing the PTA process, a crack free alloyed layer with maximum hardness of about Hv 310 could be obtained.

• Journal of Environmental Science International
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• v.2 no.1
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• pp.17-26
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• 1993

The layer that is directly influenced by ground surface is called the atmospheric boutsdary layer in comparison with the free atmosphere of higher layer. In the boundary layer, the changes of wind, temperature and coefficient of turbulent diffusion in altitude are large and have great influences an atmospheric diffusion. The purpose of this paper is to express the structure and characteristics of development of mixed layer by using laboratory experiment and numerical simulation. Laboratory experiment using water tank are performed that closely simulate the process of break up of nocturnal surface inversion above heated surface and its phenomena are analyzed by the use of horizontally averaged temperature which is observed. The result obtained from the laboratory experiment is compared with theoretical ones from ; \textsc{k}-\varepsilon numerical model. The results are summarized as follows. 1) The horizontally averaged temperature was found to vary smoothly with height and the mixed layer developed obviously being affected by the convection. 2) The mean height of mixed layer may be predicted as a function of time, knowing the mean initial temperature gradient. The experimental values are associated well with the theoretical values computed for value of the universal constant $C_r$= 0.16, our $C_r$ value is little smaller than the value found by Townsend and Deardoru et al.

• Electrical & Electronic Materials
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• v.9 no.6
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• pp.600-604
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• 1996

High-T$_{c}$, superconducting wire is very important element for the application of electrical power systems. But it is very difficult to develope the long high T, wire with excellent properties. BiSrCaCuO multi-layer tapes are fabricated by a rolling method and pressing method sintered for several step at 840.deg. C. The critical current densities of 637 filament multi-layer tapes sintering 100 hours fabricated by the rolling method and pressing method are 1.3*10$^{4}$ A/cm$^{2}$ and 5.5*10$^{3}$ A/cm$^{2}$. The critical cur-rent densites of multi-layer tapes made by rolling method are found to be better than those fabricated by the powder-in-tube method and pressing process. As result, the rolling method is the best way to fabricated the multi-layer filament.t.