• Title/Summary/Keyword: layer 2

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Advanced Permeation Properties of Solvent-free Multi-Layer Encapsulation of thin films on Ethylene Terephthalate(PET)

  • Han, Jin-Woo;Kang, Hee-Jin;Kim, Jong-Yeon;Kim, Jong-Hwan;Han, Jung-Min;Moon, Hyun-Chan;Park, Kwang-Bum;Kim, Hwi-Woon;Seo, Dae-Shik
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.973-976
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    • 2006
  • In this paper, the inorganic multi-layer encapsulation of thin film was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, Sputter, inorganic multi-layer thin-film encapsulation was deposited onto the Ethylene Terephthalate(PET) and their interface properties between inorganic and organic layer were investigated. In this investigation, the SiON $SiO_2$ and parylene layer showed the most suitable properties. Under these conditions, the water vapor transmission rate (WVTR) for PET can be reduced from level of $0.57g/m^2/day$ (bare substrate) to $1^{\ast}10^{-5}g/m^2/day$ after application of a SiON and $SiO_2$ layer. These results indicate that the $PET/SiO_2/SiON/Parylene$ barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

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Electrolytic Boronizing on Carbon Steels in Fused Slat of Borax and Sodium Chloride Mixture (붕사와 염화나트륨 혼합용융욕에서 탄현강의 전해붕화처리)

  • 이두환;김정기;김한삼;김수식
    • Journal of Surface Science and Engineering
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    • v.30 no.1
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    • pp.23-32
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    • 1997
  • The electrolytic boronizing on carbon steels in the mixture of $Na_2B_4O_7$ and NaCl was conducted at 750~$950^{\circ}C$ for 1~6 hours under 0.5A/$\textrm{cm}^2$ current density. The micorostructrure and microheredness of boronized layer was also studien. The effect of the additive such as $CaCl_2$ or NaOH on the formation of boronized layer was also investigated. The boronized layer were composed of two sublayers, i.e., FeB and $Fe_2B$ , which have tooth structure. the average layer thinknesses of the low carbon steel and SM45C boronized at $900^{\circ}C$ for 4hours were 153 and 138 $\mu\textrm{m}$, respectively. The thickness of the twosublayers was significantly increased with increasing boronizing temperature. To obtain a single $Fe_2B$ layer without FeB sublayer, the boronized materials ware homegenized at $950^{\circ}C$ for 4 hours. It was fount that the single layer with a microhardness Hv$\thickapprox$ 1120 -1250 was formed. The calculated activation energies for formation of boronized layer on the low carbon steel and SM45C were 18.7 and 12.6 Kcal/mol, respectively.

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Emission Characteristics of Red OLEDs in the Emitting Layer Position Doped with DCM2 and Rubrene (DCM2와 Rubrene이 첨가된 발광층 위치에 따른 적색 OLED의 발광 특성)

  • Jung, Haeng-Yun;Gu, Hal-Bon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.8
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    • pp.664-668
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    • 2011
  • In this study, we have fabricated the red OLED (organic light emitting diode). The basic device structure is ITO/hole transporting layer, TPD(500 $\AA$)/red emitting layer, Alq3 doped with DCM2:rubrene(20 $\AA$)/electron transporting layer, Alq3(M) (500 $\AA$-M $\AA$)/LiF(15 $\AA$)/Al(1,000 $\AA$). The thickness of electron transporting layer(500 $\AA$-M $\AA$) changed 0, 20, 40, 60 $\AA$. Turn on voltage of the red OLED was 5 V, 6 V, 6.5 V and 7.5 V, respectively with electron transfer layer changed ratio. Luminance of red OLED was 4,504, 1,840, 1,490 and 1,130 cd/$m^2$, respectively. Optimized electron transfer layer position changed ratio of the red OLED was 0 $\AA$.

Evaluation on the Contents of Antioxidative Substance at the Different Layers in Several Rice Varieties (몇 가지 벼품종 현미층위별 항산화 물질의 함량 평가)

  • 곽태순
    • Korean Journal of Plant Resources
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    • v.11 no.3
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    • pp.257-263
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    • 1998
  • Fifteen varieties of Oryza sativa mainly includig those of Korean native rice were exactly cutted into three layers such as L$_1$ layer (the outer part of 90% from rice center), L$_2$ layer(the part of 81 ~ 91% from the rice center) and L$_3$ layer(the inner part of 80% from the rice center) and ferulic acid derivatives, which play an important role of antioxidative action, were quantitiavely analyzed by UV absorption spectrometric method at fixed 314nm. From this experiment, it was found that the more it enters from the surface into the rice center, the more those secondary metabolites contents were highly reduced. The varieties showing contents more than 20 mg/g were as follows: Hwasunchalbyeo(25.8mg/g), Jojeongdo(24.1mg/g), Suwon425(21.2mg/g), Daigolbyeo(20.6mg/g) and Nonglimna 1(20.2mg/g) by this order. Estimation onthe anthocyanin contents of both Suwon 425 and Sanghehanghyeolna revealed that its total. contents were very exactly close each other. However, it was charateristically differentiated in the contents of L$_2$ layer with respect to showing a considerably higher content of Suwon 425 than of Sanghaehanghyeolna. Conclusively, the selected Suwon 425 variety, which is coloured and flavour volatile one, showed relatively higher contents of anthocyanin, ferulic acid derivatives in the L$_2$ layer as well as L$_1$ layer when compared with Sanghaehangyeolna and even other varieties. This fact suggested that Suwon 425 could be a promising candidate for the development of health rice food.

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Double Layer Anti-reflection Coating for Crystalline Si Solar Cell (결정질 실리콘 태양전지를 위한 이층 반사방지막 구조)

  • Park, Je Jun;Jeong, Myeong Sang;Kim, Jin Kuk;Lee, Hi-Deok;Kang, Min Gu;Song, Hee-eun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.1
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    • pp.73-79
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    • 2013
  • Crystalline silicon solar cells with $SiN_x/SiN_x$ and $SiN_x/SiO_x$ double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of $SiN_x$ and $SiO_x$ layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9~2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of $1,370{\mu}m$. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300~1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with $SiN_x$ single layer. With the completed solar cell with $SiN_x/SiN_x$ of n= 2.2/1.9 and $SiN_x/SiO_x$ of n= 2.2/1.46, the electrical characteristics was improved as ${\Delta}V_{oc}$= 3.7 mV, ${\Delta}_{sc}=0.11mA/cm^2$ and ${\Delta}V_{oc}$=5.2 mV, ${\Delta}J_{sc}=0.23mA/cm^2$, respectively. It led to the efficiency improvement as 0.1% and 0.23%.

The Properties of Passivation Films on Al2O3/SiNX Stack Layer in Crystalline Silicon Solar Cells (결정질 실리콘 태양전지의 Al2O3/SiNX 패시베이션 특성 분석)

  • Hyun, Ji Yeon;Song, In Seol;Kim, Jae Eun;Bae, Soohyun;Kang, Yoonmook;Lee, Hae-Seok;Kim, Donghwan
    • Current Photovoltaic Research
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    • v.5 no.2
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    • pp.63-67
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    • 2017
  • Aluminum oxide ($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surface. The quality of passivation layer is important for high-efficiency silicon solar cell. double-layer structures have many advantages over single-layer materials. $Al_2O_3/SiN_X$ passivation stacks have been widely adopted for high- efficiency silicon solar cells. The first layer, $Al_2O_3$, passivates the surface, while $SiN_X$ acts as a hydrogen source that saturates silicon dangling bonds during annealing treatment. We explored the properties on passivation film of $Al_2O_3/SiN_X$ stack layer with changing the conditions. For the post annealing temperature, it was found that $500^{\circ}C$ is the most suitable temperature to improvement surface passivation.

Enhanced Luminous Intensity in LEDs with Current Blocking Layer (전류 차단 층을 갖는 LED의 향상된 광세기)

  • Yoon, Seok-Beom;Kwon, Kee-Young;Choi, Ki-Seok
    • Journal of Digital Convergence
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    • v.12 no.7
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    • pp.291-296
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    • 2014
  • Inserting a $SiO_2$ layer underneath the p-pad electrode as the current blocking layer (CBL) structure and extending p-metal finger patterns, the GaN LEDs using an indium-tin-oxide (ITO) layer show the improved light output intensity, resulting from better current spreading and reduced light loss on the surface of p-pad metal. The LEDs with an oxide layer of $100{\mu}m$-pad-width and $6{\mu}m$-finger-width have better light output intensities than those with an oxide layer of $105{\mu}m$-pad-width and $12{\mu}m$-finger-width. Using the ATLAS device simulator from Silvaco Corporation, the current density distributions on the active layer in CBL LEDs have been investigated.

Thickness Effect of ZnO Electron Transport Layers in Inverted Organic Solar Cells

  • Jang, Woong-Joo;Cho, Hyung-Koun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.377-377
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    • 2011
  • Organic solar cells (OSCs) with low cost have been studied to apply on flexible substrate by solution process in low temperature [1]. In previous researches, conventional organic solar cell was composed of metal oxide anode, buffer layer such as PEDOT:PSS, photoactive layer, and metal cathode with low work function. In this structure, indium tin oxide (ITO) and Al was generally used as metal oxide anode and metal cathode, respectively. However, they showed poor reliability, because PEDOT:PSS was sensitive to moisture and air, and the low work function metal cathode was easily oxidized to air, resulting in decreased efficiency in half per day [2]. Inverted organic solar cells (IOSCs) using high work function metal and buffer layer replacing the PEDOT:PSS have focused as a solution in conventional organic solar cell. On the contrary to conventional OSCs, ZnO and TiO2 are required to be used as a buffer layer, since the ITO in IOSC is used as cathode to collect electrons and block holes. The ZnO is expected to be excellent electron transport layer (ETL), because the ZnO has the advantages of high electron mobility, stability in air, easy fabrication at room temperature, and UV absorption. In this study, the IOSCs based on poly [N-900-hepta-decanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10,30-benzothiadiazole)] (PCDTBT) : [6,6]-phenyl C71 butyric acid methyl ester (PC70BM) were fabricated with the ZnO electron-transport layer and MoO3 hole-transport layer. Thickness of the ZnO for electron-transport layer was controlled by rotation speed in spin-coating. The PCDTBT and PC70BM were mixed with a ratio of 1:2 as an active layer. As a result, the highest efficiency of 2.53% was achieved.

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The Effect of Liquid Water in Fuel Cell Cathode Gas Diffusion Layer on Fuel Cell Performance (가스 확산층(GDL)내부의 물이 연료전지 성능에 미치는 영향)

  • Park, Sang-Kyun
    • Journal of Advanced Marine Engineering and Technology
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    • v.39 no.4
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    • pp.374-380
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    • 2015
  • In this paper, a dynamic model describing the 2 phase effect on the gas diffusion layer depending on load change of a fuel cell stack was developed to examine the effects of liquid water in fuel cell cathode gas diffusion layer on the fuel cell performance. For the developed model, 2 phase effect on the performance of a fuel cell stack depending on the load changes, concentration distribution of water vapor and oxygen inside a gas diffusion layer, the effect of the thickness and porosity of the gas diffusion layer on the fuel cell stack voltage were examined. As a result, a fuel cell stack voltage for the 2 phase model within the scope of the research become lower than that for the 1 phase model regardless of the load. Although oxygen molar concentration for the gas diffusion layer adjacent to the catalyst layer was the lowest, water vapor concentration is the highest. In addition, as thickness and porosity of the gas diffusion layer increased and decreased, respectively, the fuel cell stack voltage decreased.

Properties of Polymer Light Emitting Diodes Using PFO : MEH-PPV Emission Layer and Hole Blocking Layer (PFO : MEH-PPV 발광층과 정공 차단층을 이용한 고분자 발광다이오드의 특성)

  • Lee, Hak-Min;Gong, Su-Cheol;Shin, Sang-Bae;Park, Hyung-Ho;Jeon, Hyeong-Tag;Chang, Ho-Jung
    • Journal of the Semiconductor & Display Technology
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    • v.7 no.2
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    • pp.49-53
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    • 2008
  • The yellow base polymer light emitting diodes(PLEDs) with double emission and hole blocking layers were prepared to improve the light efficiency. ITO(indium tin oxide) and PEDOT : PSS[poly(3,4-ethylenedioxythiophene) : poly(styrene sulfolnate)] were used as cathode and hole transport materials. The PFO[poly(9,9-dioctylfluorene)] and MEH-PPV[poly(2-methoxy-5(2-ethylhe xoxy)-1,4-phenylenevinyle)] were used as the light emitting host and guest materials, respectively. TPBI[Tpbi1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene] was used as hole blocking layer. To investigate the optimization of device structure, we prepared four kinds of PLED devices with different structures such as single emission layer(PFO : MEH-PPV), two double emission layer(PFO/PFO : MEH-PPV, PFO : MEH-PPV/PFO) and double emission layer with hole blocking layer(PFO/PFO : MEH-PPV/TPBI). The electrical and optical properties of prepared devices were compared. The prepared PLED showed yellow emission color with CIE color coordinates of x = 0.48, y = 0.48 at the applied voltage of 14V. The maximum luminance and current density were found to be about 3920 cd/$m^2$ and 130 mA/$cm^2$ at 14V, respectively for the PLED device with the structure of ITO/PEDOT : PSS/PFO/PFO : MEH-PPV/TPBI/LiF/Al.

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