• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.4
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• pp.483-491
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• 2017

The interdigitated germanium (Ge) meta-lsemiconductor-metal (MSM) photodetectors (PDs) with and without an $SiO_2$ anti-reflection (AR) layer was fabricated, and the effect of $SiO_2$ AR layer on their optoelectronic response properties were investigated in detail. The lowest reflectance of 15.6% at the wavelength of 1550 nm was obtained with a $SiO_2$ AR layer with a thickness of 260 nm, which was in a good agreement with theoretically calculated film thickness for minimizing the reflection of Ge surface. The Ge MSM PD with 260 nm-thick $SiO_2$ AR layer exhibited enhanced device performance with the maximum values of responsivity of 0.65 A/W, the quantum efficiency of 52.2%, and the detectivity of $2.49{\times}10^9cm\;Hz^{0.5}W^{-1}$ under the light illumination with a wavelength of 1550 nm. Moreover, time-dependent switching analysis of Ge MSM PD with 260 nm- thick $SiO_2$ AR layer showed highest on/off ratio with excellent stability and reproducibility. All this investigation implies that 260 nm-thick $SiO_2$ AR layer, which is effective in the reduction in the reflection of Ge surface, has a great potential for Ge based optoelectronic devices.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.67-70
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• 2022

In order to prevent water vapor and oxygen permeation in the organic light emitting diodes (OLED), Al₂O₃ thin-film encapsulation (TFE) technology were investigated. Atomic layer deposition (ALD) method was used for making the Al₂O₃ TFE layer because it has superior barrier performance with advantages of excellent uniformity over large scales at relatively low deposition temperatures. In this study, the thickness of the Al₂O₃ layer was varied by controlling the numbers of the unit pulse cycle including Tri Methyl Aluminum(Al(CH₃)₃) injection, Ar purge, and H₂O injection. In this case, several process parameters such as injection pulse times, Ar flow rate, precursor temperature, and substrate temperatures were fixed for analysis of the effect only on the thickness of the Al₂O₃ layer. As results, at least the thickness of 39 nm was required in order to obtain the minimum WVTR of 9.04 mg/m²day per one Al₂O₃ layer and a good transmittance of 90.94 % at 550 nm wavelength.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.175-179
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• 2017

In this study, we investigate the $SiO_2$ current blocking layer (CBL) to improve light output power efficiency in nonpolar a-plane (11-20) GaN LEDs on a r-plane sapphire substrate. The $SiO_2$ CBL was produced under the p-pad layer using plasma enhanced chemical vapor deposition (PECVD). The results show that nonpolar GaN LED light output power with the $SiO_2$ CBL is considerably enhanced compared without the $SiO_2$ CBL. This can be attributed to reduced light absorption at the p-pad due to current blocking to the active layer by the $SiO_2$ CBL.

• Smart Structures and Systems
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• v.14 no.5
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• pp.961-980
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• 2014

Based on the general theory of elasticity, the static behavior of 2-2 cement-based piezoelectric curved composites is investigated. The actuator consists of 2 cement layers and 1 piezoelectric layer. Considering the electrode layer between the cement layer and the piezoelectric layer as the elastic layer, the exact solutions of the mechanical and electrical fields of the curved composites are obtained by utilizing the Airy stress function method. Furthermore, the theoretical results are compared with the FEM results and good agreements (with almost no error) are obtained, thus proving the validity of this study. Furthermore, the influence of certain parameters is discussed, which can help to get the desired displacements and stresses. Finally, it is seen that the analytical model established in this paper works well, which could benefit the design of this kind of cement-based smart devices.

• Corrosion Science and Technology
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• v.19 no.2
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• pp.51-56
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• 2020

The objective of this study was to improve properties of plasma sprayed HAp layer to titanium substrate by introducing an intermediate layer with two different methods. Before applying Zn doped HAp coating on titanium substrate, an intermediate layer was introduced by titanium plasma spray or titanium anodization. Heat treatments were conducted for some samples after titanium intermediate layer was formed. Zn doped HAp top layer was applied by plasma spraying. Three-point bending test and pull-off adhesion test were performed to determine the adhesion of Zn doped HAp coatings to substrates. Long-term credibility of Zn doped HAp plasma sprayed coatings on titanium was assessed by electrochemical impedance measurements in Hanks' solution. It was found that both titanium plasma sprayed and titanium anodized intermediate layer had excellent credibility. Strong adhesion to the titanium substrate was confirmed after 12 weeks of immersion for coating samples with titanium plasma sprayed intermediate layer. Samples with titanium anodized intermediate layer showed good bending strength. However, they showed relatively poor resistance against pulling off. The thickness of titanium anodized intermediate layer can be controlled much more precisely than that of plasma sprayed one, which is important for practical application.

• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.401-406
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• 2018

We investigated the effect of ZnO seed layer thickness on the density of ZnO nanorod arrays. ZnO has been deposited using two distinct processes consisting of the seed layer deposition using ALD and subsequent hydrothermal ZnO growth. Due to the coexistence of the growth and dissociation during ZnO hydrothermal growth process on the seed layer, the thickness of seed layer plays a critical role in determining the nanorod growth and morphology. The optimized thickness resulted in the regular ZnO nanorod growth. Moreover, the introduction of ALD to form the seed layer facilitates the growth of the nanorods on ultrathin seed layer and enables the densification of nanorods with a narrow change in the seed layer thickness. This study demonstrates that ALD technique can produce densely packed, virtually defect-free, and highly uniform seed layers and two distinctive processes may form ZnO as the final product via the initial nucleation step consisting of the reaction between $Zn^{2+}$ ions from respective zinc precursors and $OH^-$ ions from $H_2O$.

• Transactions of the Korean Society of Pressure Vessels and Piping
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• v.7 no.2
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• pp.26-33
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• 2011

To evaluate steam oxidation behaviours of Alloy 617 and Haynes 230, oxidation test were performed at $900^{\circ}C$ in steam and $steam+20\;vol.-%\;H_2$ environments. Oxidation rate in steam condition was similar to that in air for Alloy 617, while it was slightly lower for Haynes 230. When hydrogen was added to steam, oxidation rate was enhanced. Isolated $MnTiO_3$ particle were formed on $Cr_2O_3$ oxide layer and sub layer $Cr_2O_3$ were formed in steam and $steam+20\;vol.-%\;H_2$ for Alloy 617. On the other hands, $MnCr_2O_3$ layer were formed on top of $Cr_2O_3$ oxide layer for Haynes 230. The extensive sub layer $Cr_2O_3$ formation was resulted from the oxygen inward diffusion in such environments. When hydrogen was added, the oxide morphology was changed from polygonal to platelet because of the accelerated diffusion of cations under the oxide layer. In addition, decarburized zone was extended as hydrogen participated into the reactions causing carbide dissolution.

• Journal of the Korean Society of Clothing and Textiles
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• v.27 no.7
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• pp.843-850
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• 2003

Cu/PET film composites were prepared by electroless copper plating method. In order to improve adhesion between electroless plated Cu layer and polyester (PET) film, the effect of pretreatment conditions such as etching method, mixed catalyst composition were investigated. Chemical etching and plasma treatment increased surface roughness in decreasing order of Ar＞HCl＞O$_2$＞NH$_3$. However, adhesion of Cu layer on PET film increased in the following order: $O_2$＜Ar＜HCl＜NH$_3$. It indicated that appropriate surface roughness and introduction of affinitive functional group with Pd were key factors of improving adhesion of Cu layer. PET film was more finely etched by HCI tolution, resulting in an improvement in adhesion between Cu layer and PET film. Plasma treatment with NH$_3$produced nitrogen atoms on PET film, which enhances chemisorption of Pd$^{2+}$ on PET film, resulting in improved adhesion and shielding effectiveness of Cu layer deposited on the Pd catalyzed surface. Surface morphology of Cu plated PET film revealed that Pd/Sn colloidal particles became more evenly distributed in the smaller size by increasing the molar ratio of PdCl$_2$; SnCl$_2$from 1 : 4 to 1 : 16. With increasing the molar ratio of mixed catalyst, adhesion and shielding effectiveness of Cu plated PET film were increased.d.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.215.2-215.2
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• 2015

We fabricated dual active layer (DAL) thin film transistors (TFTs) with indium tin zinc oxide (ITZO) and indium gallium zinc oxide (IGZO) thin film layers using solution process. The ITZO and IGZO layer were used as the front and back channel, respectively. In order to investigate the bias stress stability of ITZO SAL (single active layer) and ITZO/IGZO DAL TFT, a gate bias stress of 10 V was applied for 1500 s under the dark condition. The SAL TFT composed of ITZO layer shows a poor positive bias stability of ${\delta}VTH$ of 13.7 V, whereas ${\delta}VTH$ of ITZO/IGZO DAL TFT was very small as 2.6 V. In order to find out the evidence of improved bias stress stability, we calculated the total trap density NT near the channel/gate insulator interface. The calculated NT of DAL and SAL TFT were $4.59{\times}10^{11}$ and $2.03{\times}10^{11}cm^{-2}$, respectively. The reason for improved bias stress stability is due to the reduction of defect sites such as pin-hole and pores in the active layer.