• Journal of the Korean Electrochemical Society
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• v.16 no.3
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• pp.111-122
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• 2013

Sodium sulfur (NAS) battery is a high energy storage system (ESS). These days, as the use of renewable green energy like wind energy, solar energy and ocean energy is rapidly increasing, the demand of ESS is increasing and NAS battery is considered to be one of the most promising ESS. Since NAS battery has a high energy density(3 times of lead acid battery), long cycle life and no self-charge and discharge, it is a good candidate for ESS. A NAS battery consists of sulfur as the positive electrode, sodium as the negative electrode and ${\beta}$"-alumina as the electrolyte and a separator simultaneously. Since sulfur is an insulator, carbon felt should be used as conductor with sulfur and so the composition and property of the cathode could largely influence the cell performance and life cycle. Therefore, in this paper, the composition of NAS battery, the property of carbon felt and sodium polysulfides ($Na_2S_x$, intermediates of discharge), and the effects of these factors on cycle performance of cells are described in detail.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.2
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• pp.33-42
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• 2009

A polymer-based flexible neural probe was fabricated for monitoring of neural activities from a brain. To improve the insertion stiffness, a 5 ${\mu}m$ thick biocompatible Au layer was electroplated between the top and bottom polymer layers. The developed neural probe penetrated a gel whose elastic modulus is similar to that of a live brain tissue without any fracture, To minimize mechanical residual stress and bending from the probe, two new methods were employed: (1) use of a thermal annealing process after completing the device and (2) incorporation of multiple different layers to compensate the residual stress between top and bottom layers. Mechanical bending around the probe tip was clearly removed after employing the two processes. In electrical test, the developed probe showed a proper impedance value to record neural signals from a brain and the result remained the same for 72 hours. In simple in-vitro probe characterization, the probe showed a great removal of residual stress and an excellent recording performance. The in-vitro recording results did not change even after 1 week, suggesting that this electrode has the potential for great recording from neuron firing and long-term implant performance.

• Restorative Dentistry and Endodontics
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• v.28 no.5
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• pp.378-384
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• 2003

This study evaluated the influence of a desensitizer(MS coat) on microtensile bond strength of different adhesives:a three-step adhesive(All-Bond 2), a two-step adhesive(Single Bond), a one-step adhesive(One-up Bond F). Non-caries extracted human molars were used. Dentin surface was obtained by horizontal section on mid-portion of crown using a water-cooled low speed diamond saw. Teeth were randomly divided into 6 group. AMO(MS coat + All Bond), SMO(MS coat + Single Bond)- and OMO(MS coat + One-up Bond F)-dentin surface were treated with 17% EDTA before bonded adhesive. AMX-, SMX- and OMX-dentin surface were bonded with All-Bond 2, Single Bond and One-up Bond F, respectively. with no previous treatment with MS coat and 17% EDTA. About 1cm high resin composite($Z-250^{TM}$) were incrementally build-up on the treated surface. The specimens for the microtensile test were serially sectioned perpendicular to the adhesive layer to obtain $0.7{\times}0.7mm$ sticks. 30 sticks were prepared from each group. After that. tensile bond strength for each stick was measured with Microtensile Tester at a 1mm/min crosshead speed. Fractured dentin surfaces were observed under the SEM. The results were statistically analysed by using a One-way ANOVA and Tukey's test(p<0.05). Value in MPa were: $AMO-44.35{\pm}13.21;{\;}SMO-39.35{\pm}13.32;{\;}OMO-31.07{\pm}10.25;{\;}AMX-49.22{\pm}16.38;{\;}SMX-56.02{\pm}13.35;{\;}OMX-72.93{\pm}16.19$. Application of MS coat reduced microtensile bond strengths of both Single Bond and One-up Bond F, whereas microtensile bond strengths of All-Bond 2 were not affected significantly.

• The Journal of Engineering Geology
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• v.12 no.2
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• pp.137-150
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• 2002

Recently, plane failure mode occurred frequently along the bedding plane having low angle dip about 20 degree when cutting slopes were constructed in sedimentary rock region of the Gyeongsang Basin. Landslide of the Whangryeong Mountain which was occurred at Busan Metropolitan City in 1999 belongs to the category mentioned above. Reconstruction for cutting slope of the Whangryeong Mountain has finished in 2000 and final grade of reconstructed cutting slope is 1:2.0. To analyze slope failure mode for landslide of the Whangryeong Mountain, various analyses were performed such as in-situ investigation and test, drilling, laboratory test, aerial photograph interpretation, X-ray diffraction analysis, and slope stability analysis using Stereographic Projection and Limit Equilibrium methods. As the result, it is identified that tension cracks had been developed one year before the landslide took place. The tension crack semis to be formed by merging several joint sets. It appears that failure blocks broke down along the sliding planes of different layers. Risk of plane failure is conformed as a result of stability analysis using Stereographic Projection and Limit Equilibrium methods in case that greenish gray tuffaceous shales, regared as sliding planes, are weathered. From now on, a detailed investigation is needed for the thin layers which is sensitive to weathering, and stability analysis for this layer is performed at cut slope construction site having similar geological condition.

• The Korean Journal of Pharmacology
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• v.31 no.2
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• pp.241-250
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• 1995

Protein B23 is one of the major nucleolar phosphoproteins associated with pre-ribosomal particles, and is localized in the granular region of the nucleolus. Recent studies suggest that protein B23 shuttles between nucleus and cytoplasm and also interacts with HIV Rev. These findings indicate that protein B23 is important in nucleocytoplasmic relationship and viral replication. However, the exact function of protein B23 is not clear yet. In acute nucleolar hypertrophy of rat liver, treated with thioacetamide, there was observed an increase of not only protein B23 but also B23-like protein p45 when anti-B23 monoclonal antibody (MAb) was used for identification. On the basis of the large B23 specific epitope structure composed of 68 amino acids, a hypothesis was formulated to examine that p45 is the pre-B23 resulting from excessive production of B23. In an attempt to investigate the precursor of B23, we analyzed the subcellular fractions and microsomal subfractions. Subsequently, we analyzed the finger printings of B23-like proteins using the tryptic peptide mapping. The results are summarized: 1) Using B23 MAb, we observed the presence of B23-like proteins in nucleolar fraction, nucleoplasmic fraction and microsomal fraction. 2) In the further microsomal subfractionation, we could partially purify B23-like protein in 2M layer of sucrose gradient. 3) When ion exchange chromatography was employed, there were protein species 80kDa(p80), 65kDa(p65) and 60kDa(p60). 4) Based on the tryptic map analysis of $^{125}I$ labeled proteins, the similarity between B23 and p80 was found only in 9 out of 14(B23) and 21(p80) peptides, and difference was found in the remaining peptides. p80 and p60 had 18 common peptides, and all the peptides of p60 were similar to those of p80. From these results, it is proposed that p45 is an abnormal metabolite resulting from carcinogenesis by thioacetamide, and it is not the precursor of B23. In addition, we suggest that p80 may be a precursor of p45.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.295-295
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• 2007

기계적 에너지를 전기적 에너지로 변화하는 에너지 변환소자인 압전 세라믹스는 액츄에이터, 변압기, 초음파모터, 초음파 소자 및 각종 센서로 응용되고 있으며, 그 응용분야는 크게 증가하고 있다. 최근 이러한 에너지 변화 소자는 앞으로 도래하는 ubiquitous, 무선 모바일 시대의 휴대용 전자제품, robotics, 항공우주, 자동차, 의료, 건축, MEMS 분야 등의 대체 에너지원으로 응용하기 위한 연구가 진행되고 있다. 특히 인간의 동작 등과 같은 일상적인 동작으로 필요한 전력을 얻을 수 있고, 세라믹 소자를 이용하기 때문에 전자노이즈가 발생되지 않을 뿐 아니라 반영구적으로 사용할 수가 있어서, 기존 이차전지, 연료전지를 대체 또는 보완 할 수 있는 방안도 검토되고 있다. PZT계 세라믹스는 높은 유전상수와 압전특성으로 전자세라믹스분야에서 가장 널리 사용되어지고 있지만 $1200^{\circ}C$이상의 높은 소결온도 때문에 $1000^{\circ}C$ 부근에서 급격히 휘발되는 PbO로 인한 환경오염과 기본조성의 변화로 인한 압전 특성의 저하가 문제시되고 있다. 또한, 적층 세라믹스의 제작 시 구조적 특성상 내부 전극이 도포된 상태에서 동시 소결이 필요한데, 융점이 낮은 Ag전극 대신 값비싼 Pd나 Pt가 다량 함유된 Ag/Pd, Ag/Pt 전극이 사용되고 있어 경제적인 문제가 발생하게 된다. 따라서 순수 Ag 전극을 사용하거나, Ag의 비율이 높은 내부 전극을 사용하기 위해서는 $950^{\circ}C$ 이하에서 소결되는 압전 세라믹스를 개발 하는 것이 필요하다. 따라서 본 연구에서는 압전특성이 우수한 $(Pb_{1-x}Cd_x)\;[(Ni_{1/3}/Nb_{2/3})_{0.25}Zr_{0.35}Ti_{0.4}]O_3$계의 조성을 설계하여, 소결온도를 낮추기 위해서 2단계 하소법을 이용하였다. 분말을 ball milling을 통해 24시간 동안 혼합하였다. 혼합된 분말은 $800^{\circ}C$에서 2시간 동안 하소하였다. 하소한 분말을 72시간 동안 ball milling 하여 최종 분말을 얻었다. 최종 분말에 PVB를 첨가하여 ${\Phi}21$ disk 형태로 성형한 후, $800{\sim}950^{\circ}C$ 소결을 하였다. 최종 분말 및 소결된 시편을 XRD분석을 통하여 상을 확인하였고, SEM을 이용하여 미세조직을 관찰하였다. 전기적 특성을 확인하기 위하여 두께 1mm로 연마한 시편에 Ag 전극을 도포하여 열처리한 후, 분극 처리하였다. 압전특성은 $d_{33}$ 미터로 측정하였고, impedance analyzer를 이용하여 주파수 및 impedance 특성을 측정하였다. 그 결과 $900^{\circ}C$에서 우수한 압전 특성 및 전기적 특성을 확보 할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• Korean Journal of Soil Science and Fertilizer
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• v.34 no.2
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• pp.98-104
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• 2001

Cultivation area of the plastic film-house has been continuously increased with the increase of consumers' income. Intensive land use without fallowing or crop rotation caused severe problem such as salt accumulation in soils and in turn retarded growth and low productivity. This study was carried out to solve them derived from longterm intensive farming practices. Seven farmers who are practicing plastic film-house cultivation were recommended for case study by municipal government and selected for their excellency of cultivation and soil management. The cultivation periods of these systems were in the range of 5 to 40 years in the regions mainly located in alluvial soil cultivated with cucumber, tomato and red pepper. The soils texture of the excellent farmers' fields were silt loam or sandy loam, ranged from 7 to 15 percents of clay contents. Soil bulk density, depth of plowing layer and soil aggregates contents of the farmers' soils were 0.89, 23.1 cm, 61.6% whereas those in neighboring soils were 1.10, 17.8 cm, 54.2 %, respectively. And pH, OM and $NO_3-N$ of the farmers' soils also were better than those of neighboring soils. There was no difference in population densities of nematode between the good farmers' and neighboring soils, but actinomyces and Fusarium densities of recommended farmers' soils were better than neighboring soils. The major farming practices by the good farmers were characterized by deep plowing with flooding, amendment of crude organic matter, and reduction of chemical fertilizer application before transplanting, and also drip irrigation and liquid manure application after planting. They also conducted solar sterilization with or without flooding, removal of plastic films during rainy days and culturing rice or corn as rotation crops to avoid the problems mentioned above.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.207-214
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• 2005

This paper presents a channel structure for promising high performance pseudomorphic high electron mobility transistor(pHEMT) switching device for design and fabricating of microwave control circuits, such as switches, phase shifters, attenuators, limiters, for application in personal mobile communication systems. Using the designed epitaxial channel layer structure and ETRI's $0.5\mu$m pHEMT switch process, single pole double throw (SPDT) Tx/Rx monolithic microwave integrated circuit (MMIC) switch was fabricated for 2.4 GHz and 5 GHz band wireless local area network (WLAN) systems. The SPDT switch exhibits a low insertion loss of 0.849 dB, high isolation of 32.638 dB, return loss of 11.006 dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V These performances are enough for an application to 5 GHz band WLAN systems.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.74-74
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• 2010

One-dimensional nanosturctures such as nanowires and nanotube have been mainly proposed as important components of nano-electronic devices and are expected to play an integral part in design and construction of these devices. Silicon carbide(SiC) is one of a promising wide bandgap semiconductor that exhibits extraordinary properties, such as higher thermal conductivity, mechanical and chemical stability than silicon. Therefore, the synthesis of SiC-based nanowires(NWs) open a possibility for developing a potential application in nano-electronic devices which have to work under harsh environment. In this study, one-dimensional nanowires(NWs) of cubic phase silicon carbide($\beta$-SiC) were efficiently produced by thermal chemical vapor deposition(T-CVD) synthesis of mixtures containing Si powders and hydrocarbon in a alumina boat about $T\;=\;1400^{\circ}C$ SEM images are shown that the temperature below $1300^{\circ}C$ is not enough to synthesis the SiC NWs due to insufficient thermal energy for melting of Si Powder and decomposition of methane gas. However, the SiC NWs are produced over $1300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is about $1400^{\circ}C$ with an average diameter range between 50 ~ 150 nm. Raman spectra revealed the crystal form of the synthesized SiC NWs is a cubic phase. Two distinct peaks at 795 and $970\;cm^{-1}$ over $1400^{\circ}C$ represent the TO and LO mode of the bulk $\beta$-SiC, respectively. In XRD spectra, this result was also verified with the strongest (111) peaks at $2{\theta}=35.7^{\circ}$, which is very close to (111) plane peak position of 3C-SiC over $1400 ^{\circ}C$ TEM images are represented to two typical $\beta$-SiC NWs structures. One is shown the defect-free $\beta$-SiC nanowire with a (111) interplane distance with 0.25 nm, and the other is the stacking-faulted $\beta$-SiC nanowire. Two SiC nanowires are covered with $SiO_2$ layer with a thickness of less 2 nm. Moreover, by changing the flow rate of methane gas, the 300 sccm is the optimal condition for synthesis of a large amount of $\beta$-SiC NWs.