• Electrical & Electronic Materials
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• v.9 no.8
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• pp.789-798
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• 1996

The double nitride layer Metal Nitride Oxide Semiconductor(MNOS) structures were fabricated by variating both gas ratio and nitride thickness, and by duplicating nitride deposited and one nitride layer MNOS structure to improve nonvolatile memory characteristics of MNOS structures by Low Pressure Chemical Vapor Deposition(LPCVD) method. The nonvolatile memory characteristics of write-in, erase, memory retention and degradation of Bias Temperature Stress(BTS) were investigated by the homemade automatic .DELTA. $V_{FB}$ measuring system. In the trap density double nitride layer structures were higher by 0.85*10$^{16}$ $m^{-2}$ than one nitride layer structure, and the AVFB with oxide field was linearly increased. However, one nitride layer structure was linearly increased and saturated above 9.07*10$^{8}$ V/m in oxide field. In the erase behavior, the hole injection from silicon instead of the trapped electron emission was observed, and also it was highly dependent upon the pulse amplitude and the pulse width. In the memory retentivity, double nitrite layer structures were superior to one nitride layer structure, and the decay rate of the trapped electron with increasing temperature was low. At increasing the number on BTS, the variance of AVFB of the double nitride layer structures was smaller than that of one nitride layer structure, and the trapped electron retention rate was high. In this paper, the double nitride layer structures were turned out to be useful in improving the nonvolatile memory characteristics.

• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.198-205
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• 2003

$Ba_{0.66}Sr_{0.34}TiO_3$ thin films and seed-layers were deposited on $Pt/Ti/SiO_2/Si$substrate by R.F. magnetron sputtering method. Effects of various substrate temperature conditions on electrical properties (such as capacitance and leakage current) of BST thin films were studied. The effect of seed-layer was also studied. When seed-layer was inserted between BST and Pt, the crystallization of the BST thin films was considerably improved and the processing temperature was lowered. Compared to the pure BST thin films, dielectric constant, dielectric loss, and leakage current of BST thin films deposited on the seed-layer were considerably improved. It could be revealed that electrical properties are influenced by the substrate temperatures of BST thin films and are enhanced by the seed-layer.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.64.2-65
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• 2003

A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{＋}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{＋}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.21 no.5
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• pp.791-799
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• 1997

The wear characteristics and wear mechanisms of plasma sprayed Al/sub 2/ O/sub 3/-40%TiO/sub 2/ and Cr/sub 2/O/sub 3/ deposited on casting aluminum alloy(AC4C) were investigated. Specimens were processed for various coating thicknesses. Ball on disk type wear tester was used for wear test. The scratch test on plasma sprayed coating surface showed that critical load to break the coating layer was greater than 40 N. The critical load increase with the increase of coating thickness of specimens. The friction coefficient of Cr/sub 2/O/sub 3/ coating layer was less than that of Al/sub 2/O/sub 3/-40%TiO/sub 2/ coating layer. The wear resistance of Cr/sub 2/O/sub 3/ coating layer was greater than that of Al/sub 2/O/sub 3/-40%TiO/sub 2/ coating layer. Microscopic observation of worn surfaces was made by SEM. SEM observation showed that the main mechanism of wear for Al/sub 2/O/sub 3/-40%TiO/sub 2/ coating layer was abrasive wear under 50 N. For the case of Al/sub 2/O/sub 3/-40%TiO/sub 2/ coating layer, as the surface cracks perpendicular to sliding direction propagated, the wear debris was generated in wear track. However, the main mechanism of wear for Cr/sub 2/O/sub 3/ coating layer was brittle fracture under 150 N.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.550-555
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• 2011

A high-quality CIGS film with a selenization process needs to be developed for low-cost and large-scale production. In this study, we used $Cu_2In_3$, CuGa and $Cu_2Se$ sputter targets for the deposition of a precursor. The precursor deposited by sputtering was selenized in Se vapor. The precursor layer deposited by the co-sputtering of $Cu_2In_3$, CuGa and $Cu_2Se$ showed a uniform distribution of Cu, In, Ga, and Se throughout the layer with Cu, In, CuIn, CuGa and $Cu_2Se$ phases. After selenization at $550^{\circ}C$ for 30 min, the CIGS film showed a double-layer microstructure with a large-grained top layer and a small-grained bottom layer. In the AES depth profile, In was found to have accumulated near the surface while Cu had accumulated in the middle of the CIGS film. By adding a Cu-In-Ga interlayer between the co-sputtered precursor layer and the Mo film and adding a thin $Cu_2Se$ layer onto the co-sputtered precursor layer, large CIGS grains throughout the film were produced. However, the Cu accumulated in the middle of CIGS film in this case as well. By supplying In, Ga and Se to the CIGS film, a uniform distribution of Cu, In, Ga and Se was achieved in the middle of the CIGS film.

• Journal of Surface Science and Engineering
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• v.48 no.2
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• pp.33-37
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• 2015

High efficiency LED device is being concerned due to its high heat loss, and such heat loss will cause a shorter lifespan and lower efficiency. Since there is a demand for the materials that can release heat quickly into the external air, the organic insulating layer was required to be replaced with high thermal conductive materials such as metal or ceramics. Through anodizing the upper layer of Al, the Breakdown Voltage of 3kV was obtained by using an uniform thickness of $60{\mu}M$ aluminum oxide($Al_2O_3$) and was carried out to determine the optimum process conditions when thermal cracking does not occur. Two Ni layers were formed above the layer of $Al_2O_3$ by sputtering deposition and electroplating process, and saccharin was added for the purpose of minimizing the remain stress in electroplating process. The results presented that the 3-layer film including the Ni layer has an adhesive force of 10N and the thermal conductivity for heat dissipation is achieved by 150W/mK level, and leads to improvement about 7 times or above in thermal conductivity, as opposed to the organic insulation layer.

• Journal of the Korean Society of Environmental Restoration Technology
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• v.13 no.2
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• pp.80-94
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• 2010

The purpose of this study is suggest to restoration model of Pinus thunbergii in Saha-gu, Busan. The result of this study is summarized as follows. As the results of this study, vegetation restoration model is presented by separating community planting and edge planting. In community planting, as a group of canopy, there are 6 species; Pinus thunbergii, Quercus acutissima, Quercus dentata, Quercus serrata, Quercus alienna, Quercus variabilis. As a group of understory, there are 5 species; Platycarya strobilacea, Prunus sargentii, Styrax japonica, Eurya japonica, Morus bombycis. Also as a group of shrub, there were 15 kinds of species; Ulmus pavifolia, Ulmus davidiana, Lindera obtusiloba, Elaeagnus macrophylla, Mallotus japonicus, Ligustrum obtusifolium, Sorbus alnifolia, Rhus trichocarpa, Zanthoxylum schinifolium, Rosa wichuraiana, Rhus chinensis, Viburnum erosum, Rhododendron mucronulatum, Rhododendron yedoense, Indigofera pseudotinctoria. And as a group of edge vegetation, there were 10 kinds of species; Japanese Angelica, Symplocos chinensis, Pittosporum tobira, Lespedeza maximowiczii, Lespedeza bicolor, Rubus coreanus, Rubus idaeus, Vitis thunbergii, Ampelopsis brevipedunculata, Rosa multiflora. Vegetation restoration models of Pinus thunbergii community were calculated the units $400m^2$ for the average populations of the woody layer is 24 in canopy layer, 35 in understory layer, 410 in shrub layer, 34% herbaceous layer ground cover. And the average of breast-high area and canopy area is $10,852cm^2$ in canopy layer, in understory layer $1,546cm^2$, in shrub layer $1,158,660cm^2$. The shortest distance between trees is calculated as 2.0m in canopy layer, 1.9m in understory layer.

• Bulletin of the Korean Chemical Society
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• v.32 no.10
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• pp.3629-3633
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• 2011

The effect of a dense $TiO_2$ blocking layer prepared using the sol-gel method on the performance of dye-sensitized solar cells was studied. The blocking layer formed directly on the working electrode, separated it from the electrolyte, and prevented the back transfer of electrons from the electrode to the electrolyte. The dyesensitized solar cells were prepared with a working electrode of fluorine-doped tin oxide glass coated with a blocking layer of dense $TiO_2$, a dye-attached mesoporous $TiO_2$ film, and a nano-gel electrolyte, and a counter electrode of Pt-deposited FTO glass. The gel processing conditions and heat treatment temperature for blocking layer formation affected the morphology and performance of the cells, and their optimal values were determined. The introduction of the blocking layer increased the conversion efficiency of the cell by 7.37% for the cell without a blocking layer to 8.55% for the cell with a dense $TiO_2$ blocking layer, under standard illumination conditions. The short-circuit current density ($J_{sc}$) and open-circuit voltage ($V_{oc}$) also were increased by the addition of a dense $TiO_2$ blocking layer.

• Journal of the Korean Geophysical Society
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• v.3 no.4
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• pp.215-226
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• 2000

In order to map the acoustic basement and to locate fracture zones in the Galgok fault, seismic refraction data were acquired near the Chonbuk ranch in Gyeongju. Along three profiles of 72m(Line 1), 72m(Line 2), and 36m(Line 3) long, seismic signals were generated by a 5kg hammer. The refraction data were collected by employing twelve 8 Hz geophones at an interval of 3m and recording time of 192ms at a sampling rate of 0.2ms. The data are interpreted using GRM method. The top layer (Layer 1) is characterized as the velocity of approximately250 m/s and thickness of approximately 2.1m. This layer is regarded as a soil layer. Underneath Layer 1 lies unconsolidated layer (Layer 2) whose refraction velocity is determined to be $1,030{\sim}1,400m/s$. Layer 2 is approximately 4.6m thick and is regarded as a Quaternary gravel layer. The third layer (Layer 3) has the mean refraction velocity of $2,100{\sim}2,200m/s$ and is interpreted to be the acoustic basement. In some parts of Lines 1 and 3, the difference in depth to the top of Layer 2 is greater than 20 cm indicating the possibility of existence of Quaternary faults. Along Line 3 and the eastern part of Line 1, refracted energy from the acoustic basement was not recorded. This may highly indicate that a relatively large scale fault exists under the western part of Line 1.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.229.1-229.1
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• 2016

본 연구에서는 Hole Transporting Layer(HTL)와 Electron Transporting Layer(ETL)의 두께에 의한 특성을 비교해보기 위해서 각각 0, 10, 20 nm로 HTL, ETL 두께를 달리한 형광 OLED소자를 제작하였다. ETL의 두께가 얇아질수록 $V_{TH}$ 값은 2.5V에서 0.9 V로 낮게 나타났고 소자의 전체 두께와 on voltage는 비례한다는 특성을 발견할 수 있었다. HTL과 ETL이 두꺼울수록 각 layer에서 carrier들의 이동에 delay가 생기고 emission layer에서 표면까지 거리가 생기기 때문이다. ETL의 두께가 두꺼울수록 높은 luminance 값을 나타내는 차이를 보여주고 있다. Hole에 비해 이동도가 작은 electron은 emission layer까지 늦게 전달되어, EML내에서 비교적 cathode쪽에 가까운 곳에서 exciton이 형성되기 때문이다. CE에도 더 두꺼운 ETL을 가진 소자가 더 높은 CE값 가짐을 확인할 수 있다. 모든 소자가 $200mA/cm^2$에서 가장 높은 CE값을 나타낸 이유는 $200mA/cm^2$에서 electron-hole 결합이 만들어내는 exciton형성이 가장 많기 때문이다. PE, QE도 ETL 두께가 두꺼울수록 특성을 향상이다. 결론적으로 ETL의 두꺼울수록 current density값이 감소함을 보이고 있는 반면 turn on voltage, luminance, efficiency 증가함을 볼 수 있다.