• Atmosphere
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• v.21 no.2
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• pp.151-162
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• 2011

One-layer solar radiation(GWNU; Gangneung-Wonju National University) model is developed in order to resolve the lack of vertical observations and fast calculation with high resolution. GWNU model is based on IQBAL(Iqbal, 1983) and NREL(National Renewable Energy Laboratory) methods and corrected by precise multi-layer LBL(Line-by-line) model. Input data were used 42 atmospheric profiles from Garand et al.(2001) for calculation of global radiation by the Multi-layer and one-layer solar radiation models. GWNU model has error of about -0.10% compared with LBL model while IQBAL and NREL models have errors of about -3.92 and -2.57%, respectively. Global solar radiation was calculated by corrected GWNU solar model with satellites(MODIS, OMI and MTSAT-1R), RDPS model prediction data in Korea peninsula in 2009, and the results were compared to surface solar radiation observed by 22 KMA solar sites. All models have correlation($R^2$) of 0.91 with the observed hourly solar radiation, and root mean square errors of IQBAL, NREL and GWNU models are 69.16, 69.74 and $67.53W/m^2$, respectively.

• Journal of the Korean Institute of Landscape Architecture
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• v.29 no.1
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• pp.131-139
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• 2001

This paper aims at surveying through case studies the planting possibility on the interval artificial ground between the bank and the core landfill of the first section of works in the SUDOKWON Landfill area landfill area which was completed, followed by the layer-on-layer landfill process involving the latch or sealing layer against emitting landfill gas from the reclaimed waste. The survey results are as follows; 1. The layers of the artificial planting ground on the landfill were established on the basis of top-on-top procedure for a waste layer, a topping soil layer (T=50cm), a gas blocking layer (broken stones T=30cm), a filter layer (non-woven fabric 700g), a sheet protecting soil layer (T=20cm), and a blocking layer (HDPE SHEET 2.0mm), an irrigation layer (SAND T=30cm), a filter layer (non-woven fabric 700g), a sheet protecting soil layer (T=20cm), and a blocking layer (HDPE SHEET 2.0mm), an irrigation layer (SAND T=30cm), a filter layer (non-woven fabric 700g), a planting layer (T=90cm+), a top mound (T=2m). 2. Since no direct damage on the planting layer affected by the landfill gas was detected, planting is found to be still possible and successful except the severely unequal subsidence portion. 3. The mortality rate is discovered different on different trees: Pinus thunbergii (H3.0$\times$W1.0m) 11.25%, Pinus thunbergii (H2.5$\times$W0.8m) 4.73%, Koelreuteira paniculata 8.67%, Hibiscus syriacus 5.68%, Deutzia parviflora 6.50%, Forsythia koreana 8.17%, Rho. yedoense v. poukhanese 32.22%, and Spiraea pru v. symplicifolia 18.89%; although the last two of which are generally considered to have a strong generic growing character, they are subject to be weakened when exposed to the contaminated microclimate of the site like landfill gas. 4. The damage rates, on Pinus thunbergii, Koelreuteria paniculata, Hibiscus syracus, Forsythia koreana, Deutzia parviflora, Rho. yedoense v. poukhanense were shown to decrease to 7.31-17.69% in the second check (June 2000) lower than 5.77-46.92% in the first examination (June 1999), whereas the damage on Spiraea pru v. symplicifolia relatively increased. It is believed that preparatory method of the air pollution, change of temperature, odor by emitting landfill gas, and minute dust from vehicles should be made, and a research on this matter will be conducted in the near future.

• Corrosion Science and Technology
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• v.15 no.5
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• pp.209-216
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• 2016

In the present study, chitosan based self-healing anticorrosion coatings were prepared by layer by layer (lbl) addition of chitosan (Ch) and polyvinyl butyral (PVB) on mild carbon steel substrate. Chitosan coatings exhibited enhanced coating stability and corrosion resistance in aggressive environments by the application of a PVB top layer. Chitosan layer in the lbl coatings have been modified by using glutaraldehyde (Glu) and silica ($SiO_2$). Performance of different coatings was tested using electrochemical impedance spectroscopy and immersion test. The best anticorrosion performance was observed in case of 10 % Ch_$SiO_2$_PVB coatings, which withstand immersion test over 25 days in 0.5 M salt solution without visible corrosion. 10 % Ch_$SiO_2$ coatings without the PVB top layer didn't last more than 3days. Application of PVB top layer sealed the defects in the chitosan pre-layer and improved its hydrophobic nature as well. Raman spectra and SEM of steel surfaces after corrosion study and removal of PVB_Ch/Glu_PVB coatings showed a passive layer of iron oxide, attributing to the self-healing nature of these coatings. Conducting particle like graphene reinforcement of chitosan in the lbl coatings enhanced corrosion resistance of chitosan coatings.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.850-853
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• 2009

We have optimized the device structure by using the dielectric layer such as anti-reflection thin film to improve the emitting efficiency of white organic light emitting device (WOLED). Basically, dielectric layer with anti-reflection characteristics can enhance the emitting efficiency of WOLED by compensating the refractive index of organic layer, ITO, and Glass. Here, WOLED was designed and optimized by Macleod simulator. The refractive index of 1.74 was calculated for Dielectric layer and was selected as $TiO_2$. The optimal thicknesses of $TiO_2$ and ITO were 119.3 and 166.6 nm, respectively, at the wavelength of 600 nm. The transmittance of ITO was measured with the thickness variation of dielectric layer and ITO in Organic layer/ITO/Dielectric layer structure. The transmittance of ITO was 95.17% and thicknesses of $TiO_2$ and ITO were 119.3 and 166.6 nm, respectively. This result, calculated and measured values were coincided.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.155-160
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• 1998

It is necessary to use Arc layer and DUV resist to define 0.25 $\mu \textrm{m}$ line and space for 256 MDRAM devices. Poly-Si etching with Arc layer and different resists has been performed in a TCP-9408 etcher with variation of gas chemistries; $Cl_2/O_2, Cl_2/N_2, Cl_2$/HBr . DUV resist causes more positive etch profile and CD gain compared to I-line resist because the sidewall passivation is more stimulated by increasing polymerization through the loss of resist. When Arc layer is applied, CD hain also increases due to the polymeric mask formed after thching Arc layer. From the point of gas chemistry effects, the etch profile and CD gain is not improved using $Cl_2/O_2$ gas, since polymerization is accelerated in this gas. however, the vertical profile and less CD gain is obtained using $Cl_2$/HBr gas. Furthermore, HBr gas is very effective to suppress the difference of profile and CD variation between dense pattern and isolated pattern by minimizing non-uniformity of side wall passivation with pattern density.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.147-147
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• 2015

The multilayer structure of the organic light emitting diode has merits of improving interfacial characteristics and helping carriers inject into emission layer and transport easier. There are many reports to control hole injection from anode electrode by using transition metal oxide as an anode buffer layer, such as V2O5, MoO3, NiO, and Fe3O4. In this study, we apply thin films of LiF which is usually inserted as a thin buffer layer between electron transport layer(ETL) and cathode, as an anode buffer layer to reduce the hole injection barrier height from ITO. The thickness of LiF as an anode buffer layer is tested from 0 nm to 1.0 nm. As shown in the figure 1 and 2, the luminous efficiency versus current density is improved by LiF anode buffer layer, and the threshold voltage is reduced when LiF buffer layer is increased up to 0.6 nm then the device does not work when LiF thickness is close to 1.0 nm As a result, we can confirm that the thin layer of LiF, about 0.6 nm, as an anode buffer reduces the hole injection barrier height from ITO, and this results the improved luminous efficiency. This study shows that LiF can be used as an anode buffer layer for improved hole injection as well as cathode buffer layer.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.151-152
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• 2002

An oxidized surface layer was intentionally formed on a sputtered $MoS_2$ film by introducing oxygen gas in the final stage of sputtering process. The film showed longer life than the normal Ar-sputtered film when the surface layer was slightly oxidized. A XPS analysis revealed co-existence of $MoS_2$ and $MoO_3$ in the surface layer. suggesting that the existence of some amount of oxides in the surface layer had beneficial effect. A confusing result was obtained: the life was much shorter than normal Ar-sputtered film when the film was exposed to $O_2$ environment for 1 minute after normal Ar-sputtering, although almost no oxide was detected in XPS analysis.

• Korean Journal of Materials Research
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• v.25 no.5
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• pp.233-237
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• 2015

Silicon oxynitride that can be deposited two times faster than general SiNx:H layer was applied to fabricate the passivation protection layer of atomic layer deposition (ALD) $Al_2O_3$. The protection layer is deposited by plasma-enhanced chemical vapor deposition to protect $Al_2O_3$ passivation layer from a high temperature metallization process for contact firing in screen-printed silicon solar cell. In this study, we studied passivation performance of ALD $Al_2O_3$ film as functions of process temperature and RF plasma effect in plasma-enhanced chemical vapor deposition system. $Al_2O_3$/SiON stacks coated at $400^{\circ}C$ showed higher lifetime values in the as-stacked state. In contrast, a high quality $Al_2O_3$/SiON stack was obtained with a plasma power of 400 W and a capping-deposition temperature of $200^{\circ}C$ after the firing process. The best lifetime was achieved with stack films fired at $850^{\circ}C$. These results demonstrated the potential of the $Al_2O_3/SiON$ passivated layer for crystalline silicon solar cells.

• 한국정보통신설비학회:학술대회논문집
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• 2007.08a
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• pp.336-340
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• 2007

This paper proposes a multicast scheme over IEEE 802.16 networks which support multiple upper layer protocols such as ATM, IPv4 packets, IPv6 packets, IEEE 802.3 over IPv4 and so on. The multicast capabilities over IEEE 802.16 are important both control plane and data plane. The proposed multicast scheme can be divided into two types: direct mapping and indirect mapping. The direct mapping scheme is that layer 3 address is directly mapped into CID information which is used for connection identifier at IEEE 802.16 link layer. The indirect mapping scheme has two steps for mapping between layer 3 address and layer 2 CID. Firstly, a layer 3 address translates to Ethernet MAC address with group MAC address. Secondly, a group MAC address is mapped into CID. The mapping scheme depends on the upper layer protocols.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.252-255
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• 2013

Nano MOS with $Er_2O_3/SiO_2$ double-layer gate dielectrics was demonstrated by EDISON Nanophysics software. Double-layer structure decreases the gate leakage current in two orders compared with $SiO_2$ single-layer gate dielectric.