• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.11 no.7
• /
• pp.2549-2558
• /
• 2010

A Remote Vital Sign Monitor is an in-home healthcare system designed to wirelessly monitor core-body temperature. The Remote Vital Sign Monitor provides accuracy and features which are comparable to hospital equipment while minimizing cost with ease-of-use. It has two parts, a bandage and a monitor. The bandage and the monitor both use the Chipcon2430(CC2430) which contains an integrated 2.4GHz Direct Sequence Spread Spectrum radio. The CC2430 allows Remote Vital Sign Monitor to operate at over a 100-foot indoor radius. A simple user interface allows the user to set an upper temperature and a lower temperature that is monitored with respect to the core-body temperature. If the core-body temperature exceeds the one of two defined temperatures, the alarm will sound. The alarm is powered by a low-voltage audio amplifier circuit which is connected to a speaker. In order to accurately calculate the core-body temperature, the Remote Vital Sign Monitor must utilize an accurate temperature sensing device. The thermistor selected from GE Sensing satisfies the need for a sensitive and accurate temperature reading. The LCD monitor has a screen size that measures 64.5mm long by 16.4mm wide and also contains back light, and this should allow the user to clearly view the monitor from at least 3 feet away in both light and dark situations.

• Korean Journal of Materials Research
• /
• v.11 no.5
• /
• pp.367-371
• /
• 2001

In this paper, theS $r_2$(T $a_{1-x}$ , N $b_{x}$)$_2$ $O_{7}$(STNO) films among ferroelectric materials having a low dielectric constant for metal-ferroelectric-semiconductor field effect transistor(MFS-FET) were discussed. The STNO thin films were deposited on p-type Si(100) at room temperature by co-sputtering with S $r_2$N $b_2$ $O_{7(SNO)}$ ceramic target and T $a_2$ $O_{5}$ ceramic target. The composition of STNO thin films was varied by adjusting the power ratios of SNO target and T $a_2$ $O_{5}$ target. The STNO films were annealed at 8$50^{\circ}C$, 90$0^{\circ}C$ and 9$50^{\circ}C$ temperature in oxygen ambient for 1 hour. The value of x has significantly influenced the structure and electrical properties of the STNO films. In the case of x= 0.4, the crystallinity of the STNO films annealed at 9$50^{\circ}C$ was observed well and the memory windows of the Pt/STNO/Si structure were 0.5-8.3 V at applied voltage of 3-9 V and leakage current density was 7.9$\times$10$_{08}$A/$\textrm{cm}^2$ at applied voltage of -5V.of -5V.V.V.