• International Journal of Fuzzy Logic and Intelligent Systems
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• v.10 no.3
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• pp.247-252
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• 2010

In this paper, we investigate the relations among formal concepts, attribute oriented concept and object oriented concepts on a complete residuated lattice.

• Journal for History of Mathematics
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• v.12 no.2
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• pp.15-23
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• 1999

This paper deals with the origin of the concept of lattices in mathematics and its development until 1930's. Although it is purely mathematical, its formation is due to the development of symbolic logic Further, logicians were mostly concerned about how to imitate the methods and duplicate the problems of algebra but not the application to mathematics. The first purely mathematical approach was given by Dedekind and his results were neglected and then reappeared in 1930's.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2014.10a
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• pp.409-410
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• 2014

• Bulletin of the Korean Chemical Society
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• v.28 no.8
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• pp.1429-1432
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• 2007

• Kyungpook Mathematical Journal
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• v.58 no.3
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• pp.433-451
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• 2018

In this paper, we study the toroidality of the comaximal graphs of a finite lattice.

• International Journal of Fuzzy Logic and Intelligent Systems
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• v.13 no.4
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• pp.345-351
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• 2013

In this paper, we investigate the properties of fuzzy Galois (dual Galois, residuated, and dual residuated) connections in a complete residuated lattice L. We give their examples. In particular, we study fuzzy Galois (dual Galois, residuated, dual residuated) connections induced by L-fuzzy relations.

• The Pure and Applied Mathematics
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• v.21 no.3
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• pp.183-194
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• 2014

In this paper, we investigate the properties of Alexandrov fuzzy topologies and meet-join approximation operators. We study fuzzy preorder, Alexandrov topologies and meet-join approximation operators induced by Alexandrov fuzzy topologies. We give their examples.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.46-46
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• 2002

• Korean Journal of Mathematics
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• v.27 no.2
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• pp.425-435
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• 2019

The notion of multiplier for an almost distributive lattice is introduced, and some related properties are investigated. Moreover, we introduce a congruence relation ${\phi}_{\alpha}$ induced by ${\alpha}{\in}L$ on an almost distributive lattice and derive some useful properties of ${\phi}_{\alpha}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.377-382
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• 1998

GaN epilayers having good adhesion and quality were obtained directly on the sapphire {1120} substrates by the OMVPE method without introducing a buffer layer at the lower temperature. The preferred orientations of epilayers turned out to be <0002> and at least 4 kinds of epilayers were competitively grown. Slight distortions of lattices caused by lattice mismatches between sapphire and GaN were observed at the lattices within 2~3 nm region from the interface. Accordingly, TEM investigation revealed that GaN epilayers could be grown on sapphire {1120} planes without a buffer layer.