• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.10
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• pp.25-34
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• 1995

A new vertical power MOSFET with over-current protection capability is proposed. The MOSFET consists of main power MOSFET cell, sensing MOSFET cell and lateral npn bipolar transistor. The proposed MOSFET may be fabricated by a conventional DMOS process without any additional fabrication step. Overcurrent state is sensed by the newly designed lateral bipolar transistor. Mixed-mode simulations proved that the overcurrent protection is achieved by the proposed MOSFET successfully with a small protection area less than 0.2 % of the total die area.

• Journal of the Korean Society of Radiology
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• v.8 no.1
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• pp.1-10
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• 2014

The bi-plane cerebrovascular angiography radiation is done the radiation exposure at the forward and lateral direction as opposed to the one of the source. So, the exposure dose of radiation workers increases further. Therefore, the medical diagnostic radiation workers as well as patients is interested to ways to reduce the dose. The exposure dose of cerebral angiography and interventional radiology must be considered the primary radiation of X-ray tube directly, scattered primary radiation between lateral tube and lateral detector and relatively small secondary scatter radiation in the walls of room. The aim of study is that the exposure dose of primary and scatter radiation reduce as much as possible to install protection device of lateral protection than common shielding of table and ceiling. As a result, the dose of fluoroscopy was reduced approximately 3.64 times the gonads, thyroid approximately 3.13 times, 4.42 times around eyes. And the dose of DSA was reduced approximately 4.98 times the gonads, thyroid approximately 3.00 times, 1.67 times around eyes. Consequently, medical practitioners can be helpful for radiation dose-exposure for the lateral protection of bi-plane cerebrovascular angiography more than the common shield method in cerebrovascular angiography and interventional radiological procedures.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.731-734
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• 2005

In this study, the design of advanced LVDS(Low Voltage Differential Signaling) I/O interface circuit with new structural low triggering ESD (Electro-Static Discharge) protection circuit was investigated. Due to the differential transmission technique and low power consumption at the same time. Maximum transmission data ratio of designed LVDS transmitter was simulated to 5Gbps. And Zener Triggered SCR devices to protect the ESD phenomenon were designed. This structure reduces the trigger voltage by making the zener junction between the lateral PNP and base of lateral NPN in SCR structure. The triggering voltage was simulated to 5.8V. Finally, we performed the layout high speed I/O interface circuit with the low triggered ESD protection device in one-chip.

• Journal of IKEEE
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• v.10 no.2 s.19
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• pp.141-148
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• 2006

In this study, the design of advanced LVDS(Low Voltage Differential Signaling) I/O interface circuit with new structural low triggering ESD (Electro-Static Discharge) protection circuit was investigated. Due to the differential transmission technique and low signal swing range, maximum transmission data ratio of designed LVDS transmitter was simulated to 5Gbps. And Zener Triggered SCR devices to protect the ESD Phenomenon were designed. This structure reduces the trigger voltage by making the zener junction between the lateral PNP and base of lateral NPN in SCR structure. The triggering voltage was simulated to 5.8V. Finally, The high speed I/O interface circuit with the low triggered ESD protection device in one-chip was designed.

• Journal of Auto-vehicle Safety Association
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• v.6 no.2
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• pp.55-60
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• 2014

To verify the performance of roadside safety facilities, strength and occupant protection test are performed by evaluation criteria. Strength test use a truck and occupant protection test use a sedan. Strength perfomance is analyzed pass rate by post lateral resistance of the safety barrier. Occupant protection performance is analyzed from THIV(Theoretical Head Impact Velocity) and PHD(Post-impact Head Deceleration) by crash cushion test.

• Journal of IKEEE
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• v.23 no.4
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• pp.1309-1313
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• 2019

In this paper, the electrical characteristics of Gate grounded NMOS(GGNMOS), Lateral insulated gate bipolar transistor(LIGBT), Silicon Controlled Rectifier(SCR), and Proposed ESD protection device were compared and analyzed. First, the trigger voltage and holding voltage were verified by simulating the I-V characteristic curve for each device. After that, the robustness was confirmed by HBM 4k simulation for each device. As a result of HBM 4k simulation, the maximum temperature of the proposed ESD protection device is lower than that of GGNMOS and GGLIGBT and SCR, which means that the robustness is improved, which means that the ESD protection device is excellent in terms of reliability.

• Journal of IKEEE
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• v.10 no.2 s.19
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• pp.149-155
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• 2006

In this study, the design of low voltage DC-DC converter with low triggering ESD (Electro-Static Discharge) protection circuit was investigated. The purpose of this paper is design optimization for low voltage(2.5V to 5.5V input range) DC-DC converter using CMOS switch. In CMOS switch environment, a dominant loss component is not switching loss but conduction loss at 1.2MHz switching frequency. In this study a constant frequency PWM converter with synchronous rectifier is used. And zener Triggered SCR device to protect the ESD phenomenon was designed. This structure reduces the trigger voltage by making the zener junction between the lateral PNP and base of lateral NPN in SCR structure. The triggering voltage was simulated to 8V.

• Journal of Korean Foot and Ankle Society
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• v.22 no.4
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• pp.135-144
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• 2018

Acute lateral ankle sprain, which is the most common musculoskeletal injury, can be treated effectively with appropriate evidence-based initial care using PRICE (protection, rest, ice, compression, and elevation) and functional rehabilitation. Many systemic reviews reporting a high-level of evidence supporting the clinical usefulness and necessity of primary surgical repair for acute lateral ankle sprain have been insufficient. Regardless of the severity of ligament complex injuries, the surgical treatment for acute lateral ankle sprain without concomitant pathologies is not recommended and should be considered only in young professional athletes with complete ligament rupture (grade III) and severe instability.

• Steel and Composite Structures
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• v.42 no.3
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• pp.325-351
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• 2022

This paper studies the lateral impact behavior of ultra-high performance fiber-reinforced concrete (UHPFRC) filled double-skin steel tubular (UHPFRCFDST) columns. The impact force, midspan deflection, and strain histories were recorded. Based on the test results, the influences of drop height, axial load, concrete type, and steel tube wall thickness on the impact resistance of UHPFRCFDST members were analyzed. LS-DYNA software was used to establish a finite element (FE) model of UHPFRC filled steel tubular members. The failure modes and histories of impact force and midspan deflection of specimens were obtained. The simulation results were compared to the test results, which demonstrated the accuracy of the finite element analysis (FEA) model. Finally, the effects of the steel tube thickness, impact energy, type of concrete and impact indenter shape, and void ratio on the lateral impact performances of the UHPFRCFDST columns were analyzed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.686-689
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• 2014

Electrostatic discharge has been considered as a major reliability problem in the semiconductor industry. ESD reliability is an important issue for these products. Therefore, each I/O (Input/Output) PAD must be designed with a protection circuitry that creates a low impedance discharge path for ESD current. This paper presents a novel Lateral Insulated Gate Bipolar (LIGBT)-based ESD protection circuit with latch-up immunity and high robustness. The proposed circuit is fabricated by using 0.18 um BCD (bipolar-CMOS-DMOS) process. Also, TLP (transmission line pulse) I-V characteristic of proposed circuit is measured. In the result, the proposed ESD protection circuit has latch-up immunity and high robustness. These characteristics permit the proposed circuit to apply to power clamp circuit. Consequently, the proposed LIGBT-based ESD protection circuit with a latch-up immune characteristic can be applied to analog integrated circuits.