• 제목/요약/키워드: laser-annealing

검색결과 331건 처리시간 0.026초

Laser 열처리를 이용한 FeMn/NiFe 박막의 자화 반전 (Local Magnetization Reversal of FeMn/NiFe Films Using Laser Annealing)

  • 최상대;진대현;김선욱;김영식;이기암;이상석;황도근
    • 한국자기학회지
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    • 제14권6호
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    • pp.228-231
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    • 2004
  • Ta(5 nm)/NiFe(11 nm)/FeMn(16 nm) Ta(5 nm)과 Ta(5 nm)/NiFe(11 run)/FeMn(16 nm)/NiFe(7 nm)/Ta(5 nm) 다층박막구조를 제작하여, Laser의 power, 조사 위치, 자장의 방향에 따라 자기저항(MR)비와 교환결합력(H$_{ex}$) 자기적 특성을 연구하였다. Laser 열처리는 power를 440 mW까지 증가시키면서 FeMn/NiFe 이중박막을 15분 씩 Laser로 조사하여, 200 mW에서부터 음의 자기장에서 자기저항곡선의 피크가 발생하기 시작하였다. 400 mW까지 증가시키면서 양의 자기장에서 자기저항곡선의 MR비와 H$_{ex}$:가 각각 0.9%에서 0.1%로, 87 Oe에서 76 Oe로 감소하였고, 음의 자기장 피크에서는 MR비와 H$_{ex}$가 모두 증가하였다. 또한 NiFe/FeMn/NiFe삼중박막에서도 같은 결과를 얻었다. 300 mA로 laser열처리한 면적을 증가시켰을 때 자기저항곡선이 positive 피크는 감소하고 negative 피크는 증가하였다. 이러한 Laser 열처리효과에 의해 결과적으로 교환결합된 박막구조의 국소적 자화반전을 가능하게 하였다.

임피던스 측정법을 이용한 엑시머 레이져 열처리 Poly-Si의 특성 분석 (APPLICATION OF IMPEDANCE SPECTROSCOPY TO POLYCRYSTALLINE SI PREPARED BY EXCIMER LASER ANNEALING)

  • 황진하;김성문;김은석;류승욱
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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    • pp.200-200
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    • 2003
  • Polycrystalline Si(polysilicon) TFTs have opened a way for the next generation of display devices, due to their higher mobility of charge carriers relative to a-Si TFTs. The polysilicon W applications extend from the current Liquid Crystal Displays to the next generation Organic Light Emitting Diodes (OLED) displays. In particular, the OLED devices require a stricter control of properties of gate oxide layer, polysilicon layer, and their interface. The polysilicon layer is generally obtained by annealing thin film a-Si layer using techniques such as solid phase crystallization and excimer laser annealing. Typically laser-crystallized Si films have grain sizes of less than 1 micron, and their electrical/dielectric properties are strongly affected by the presence of grain boundaries. Impedance spectroscopy allows the frequency-dependent measurement of impedance and can be applied to inteface-controlled materials, resolving the respective contributions of grain boundaries, interfaces, and/or surface. Impedance spectroscopy was applied to laser-annealed Si thin films, using the electrodes which are designed specially for thin films. In order to understand the effect of grain size on physical properties, the amorphous Si was exposed to different laser energy densities, thereby varying the grain size of the resulting films. The microstructural characterization was carried out to accompany the electrical/dielectric properties obtained using the impedance spectroscopy, The correlation will be made between Si grain size and the corresponding electrical/dielectric properties. The ramifications will be discussed in conjunction with active-matrix thin film transistors for Active Matrix OLED.

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Laser Thermal Processing System for Creation of Low Temperature Polycrystalline Silicon using High Power DPSS Laser and Excimer Laser

  • Kim, Doh-Hoon;Kim, Dae-Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.647-650
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    • 2006
  • Low temperature polycrystalline silicon (LTPS) technology using a high power laser have been widely applied to thin film transistors (TFTs) for liquid crystal, organic light emitting diode (OLED) display, driver circuit for system on glass (SOG) and static random access memory (SRAM). Recently, the semiconductor industry is continuing its quest to create even more powerful CPU and memory chips. This requires increasing of individual device speed through the continual reduction of the minimum size of device features and increasing of device density on the chip. Moreover, the flat panel display industry also need to be brighter, with richer more vivid color, wider viewing angle, have faster video capability and be more durable at lower cost. Kornic Systems Co., Ltd. developed the $KORONA^{TM}$ LTP/GLTP series - an innovative production tool for fabricating flat panel displays and semiconductor devices - to meet these growing market demands and advance the volume production capabilities of flat panel displays and semiconductor industry. The $KORONA^{TM}\;LTP/GLTP$ series using DPSS laser and XeCl excimer laser is designed for the new generation of the wafer & FPD glass annealing processing equipment combining advanced low temperature poly-silicon (LTPS) crystallization technology and object-oriented software architecture with a semistandard graphical user interface (GUI). These leading edge systems show the superior annealing ability to the conventional other method. The $KORONA^{TM}\;LTP/GLTP$ series provides technical and economical benefits of advanced annealing solution to semiconductor and FPD production performance with an exceptional level of productivity. High throughput, low cost of ownership and optimized system efficiency brings the highest yield and lowest cost per wafer/glass on the annealing market.

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적층 쾌속조형 시스템을 위한 시뮬레이티드 어닐링 경사절단 알고리즘 (A Simulated Annealing Tangential Cutting Algorithm for Lamination Rapid Prototyping System)

  • 김명숙;엄태준;김승우;천인국;공용해
    • 대한전기학회논문지:시스템및제어부문D
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    • 제53권4호
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    • pp.226-234
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    • 2004
  • A rapid Prototyping system that laser-cuts and laminates thick layers can fabricate 3D objects promptly with a variety of materials. Building such a system must consider the surface distortions due to both vertical-cut layers and triangular surfaces. We developed a tangential layer-cutting algorithm by rearranging tangential lines such that they reconstruct 3D surfaces more closely and also constitute smoother laser trajectories. An energy function that reflects the surface-closeness with the tangential lines was formulated and then the energy was minimized by a gradient descent method. Since this simple method tends to cause many local minima for complex 3D objects, we tried to solve this problem by adding a simulated annealing process to the proposed method. To view and manipulate 3D objects, we also implemented a 3D visual environment. Under this environment, experiments on various 3D objects showed that our algorithm effectively approximates 3D surfaces and makes laser-trajectory feasibly smooth.

Thin Film Deposition of Tb3Al5O12:Ce by Pulsed Laser Ablation and Effects of Low-temperature Post-annealing

  • Kim, Kang Min;Chung, Jun Ho;Ryu, Jeong Ho
    • Journal of the Optical Society of Korea
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    • 제16권1호
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    • pp.76-79
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    • 2012
  • $Tb_3Al_5O_{12}:Ce$ (TAG:Ce) thin films were successfully deposited by a pulsed laser ablation method on a quartz substrate, and low-temperature post-annealing effects on luminescent properties were investigated in detail. TAG:Ce thin films were analyzed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy. The as-deposited films were amorphous, and post-annealing above $700^{\circ}C$ was required for crystallization. The post-annealed TAG:Ce thin films showed strong and broad emission bands around 542 nm and excitations at 451 nm, which all corresponded to transitions between the 4f ground level to the $5d^1$ excited levels of Ce ion.

비정질 ${Te}_{100-x}{Ge}_{x}$박막의 상변화에 의한 광특성 (The Optical Characteristics of ${Te}_{100-x}{Ge}_{x}$ Thin Film with Phase Change)

  • 정홍배;이영종;이현용;김병훈
    • 대한전기학회논문지
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    • 제41권3호
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    • pp.261-266
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    • 1992
  • In this paper, we investigated the stability of TeS1100-xTGeS1xT( x = 15,33,50 at. %) thin films by observing the transmittance and reflectance changes with annealing and exposure of diode laser(780nm). As results of transmittance changes in constant tenperature and humidity atmosphere, it was shown that TeS150TGeS150T thin film has the smallest transmittance change. From the XRD patterns, it was confirmed that the transmittance changes in TeS150TGeS150T thin film before and after annealing are due to crystalization. The transmittance changes in TeS150TGeS150T thin film with annealing are largest at diode laser wavelength and the trasmittance changes with laser exposure are decreased fast.

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Luminescence Characteristics of Red Light Emitting (YVO4:Eu Thin-Film Phosphors Deposited on Si Substrate Using Pulsed Laser Deposition

  • Kim, Dong-Kuk;Kang, Wee-Kyung
    • Bulletin of the Korean Chemical Society
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    • 제25권12호
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    • pp.1859-1862
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    • 2004
  • Europium doped yttrium vanadate ($YVO_4$:Eu) phosphor thin films were grown using a pulsed laser deposition (PLD) technique on silicon substrate. The structural characterization carried out on a series of ($YVO_4$:Eu films at post annealing temperature in the range of 550 $^{\circ}C$-1150 $^{\circ}C$ indicating that films were preferentially (200) oriented at post annealing temperature above 950 $^{\circ}C.$ Photoluminescence of thin film increased with the increase of post annealing temperature and ambient oxygen pressure though the thin film has the powder-like surface morphology at oxygen pressure above 200 mTorr. Photoluminescence decay from $^5D_1$ level of $Eu^{3+}$ show the great concentration dependency, which can be used as a good parameter to control the composition of ($YVO_4$:Eu thin film.

후열처리에 따른 실리콘 나노결정 박막의 광학적 특성 변화 연구 (Annealing Effect on the Photoluminescence of Si Nanocrystallites Thin Films)

  • 전경아;김종훈;최진백;이상렬
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제51권6호
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    • pp.236-239
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    • 2002
  • Si nanocrystallites thin films on P-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed in several environmental gases ;It the temperature range of 400 to $800^{\circ}C$ Hydrogen passivation was then performed in the forming gas (95 % $N_2$ + 5 % $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature on nitrogen ambient-annealed Si nanocrystallites. We report the variation of photoluminescence (PL) properties of Si thin films by changing annealing temperatures and by using hydrogen passivation. The results could suggest that the origin of violet-indigo PL should be related to the Quantum size effect of Si nanocrystallite.

펄스 레이저 증착법으로 층착된 강유전 박막의 수소후열처리에 관한 효과 연구 (Hydrogen annealing effect of ferroelectric films fabricated by pulsed laser deposition)

  • 한경보;전창훈;전희석;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.395-397
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    • 2002
  • Dielectric thin films of Pb$\_$0.72/La$\_$0.28/Ti$\_$0.93/O$_3$(PLT(28)) have been deposited on Pt(111)/Ti/SiO$_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film. Structural properties including dielectric constant, and ferroelectric characteristics of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step process including pre-annealing treatment has a strong (111) orientation. However, the films deposited by using single-step process with hydrogen annealing process shows the smallest grain size.

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X-Ray Emission Spectroscopic Analysis for Crystallized Amorphous Silicon Induced by Excimer Laser Annealing

  • John, Young-Min;Kim, Dong-Hwan;Cho, Woon-Jo;Lee, Seok;Kurmaev, E.-Z.
    • Journal of the Optical Society of Korea
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    • 제5권1호
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    • pp.1-4
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    • 2001
  • The results of investigating $SiL_{2,3}$/ X-ray emission valence spectra of amorphous silicon films irradiated by excimer laser are presented. It is found that laser annealing leads to crystallization of amorphous silicon films and the crystallinity increases with the laser energy density from 250 to 400 mJ/$\textrm{cm}^2$. The vertical structure of the film is investigated by changing the accelerating voltage on the X-ray tube, and the chemical and structural state of Si$_3$N$_4$ buffer layer is found not to be changed by the excimer laser treatment.