• Korean Journal of Optics and Photonics
• /
• v.21 no.1
• /
• pp.6-11
• /
• 2010

Fluorescent photopolymer film was prepared with composition containing acrylate monomer, binder, a visible light sensitive photo initiator, and fluorescent anthracene polymer. A fluorescent grating pattern was inscribed on the photopolymer film using a 2-beam coupling method. A 514 nm laser was coupled to generate a beam-interference pattern. A highly fluorescent diffractive line pattern was formed on the fluorescent photopolymer within 30 sec. of exposure. The fluorescence intensity was highly enhanced in the patterned area, possibly due to the change in the environment of the fluorescent polymers by the photo-polymerization of monomers. Under a photo-mask, a gap electrode pattern was formed of fluorescent gratings with a sub-micron scale, which was matched well to the calculated value ($2.5\;{\mu}m$ and $0.6\;{\mu}m$) based on the refractive index of the photopolymer and beam incident angle ($3.4^{\circ}$, $15^{\circ}$) to the photopolymer surface.

• Journal of Sensor Science and Technology
• /
• v.13 no.2
• /
• pp.96-100
• /
• 2004

Optical fiber sensors have been used to detect small amounts of chemical species. In this work, a new thin polymer-clad fiber sensor is developed. Polyaniline is chemically synthesized and thin clad layers of the polymer are easily deposited on optical fiber by dip-coating technique. The optical property of polyaniline as a sensing material is analyzed by UV-Vis-NIR. The light source is stabilized He-Ne laser at 635 nm wavelength with 1 mW power. The light power transmitted through the optical fiber is measured with a spectrophotometer. By selecting a fixed incident angle, variation of transmitted light intensity through the optical fiber can be detected as gas molecules absorbed in the polyaniline clad layer. Among the various gases, the fabricated optical fiber sensor shows good sensitivity to $NH_{3}$ gas. The optical fiber sensors was shown more improved properties than polymer based sensors which measure conductivity changes.

• Korean Journal of Materials Research
• /
• v.20 no.5
• /
• pp.241-245
• /
• 2010

One of the weak points of the Cr-doped SZO is that until now, it has only been fabricated on perovskite substrates, whereas NiO-ReRAM devices have already been deposited on Si substrates. The fabrication of RAM devices on Si substrates is important for commercialization because conventional electronics are based mainly on silicon materials. Cr-doped ReRAM will find a wide range of applications in embedded systems or conventional memory device manufacturing processes if it can be fabricated on Si substrates. For application of the commercial memory device, Cr-doped $SrZrO_3$ perovskite thin films were deposited on a $SrRuO_3$ bottom electrode/Si(100)substrate using pulsed laser deposition. XRD peaks corresponding to the (112), (004) and (132) planes of both the SZO and SRO were observed with the highest intensity along the (112) direction. The positions of the SZO grains matched those of the SRO grains. A well-controlled interface between the $SrZrO_3$:Cr perovskite and the $SrRuO_3$ bottom electrode were fabricated, so that good resistive switching behavior was observed with an on/off ratio higher than $10^2$. A pulse test showed the switching behavior of the Pt/$SrZrO_3:Cr/SrRuO^3$ device under a pulse of 10 kHz for $10^4$ cycles. The resistive switching memory devices made of the Cr-doped $SrZrO_3$ thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.

• Polymer(Korea)
• /
• v.26 no.2
• /
• pp.227-236
• /
• 2002

The structure of pregel state in thermoreversible poly(vinylidene fluoride)(PVDF) /propylene carbonate(PC) system was investigated by laser light scattering. It was found that the PVDF chain did not exist as a separate chain even in a very dilute concentration(i.e. 100 times more dilute than the gel formation concentration) but as a large spherical aggregate with the radius of gyration $R_G$, of 232 nm and the effective hydrodynamic radius $R_H$= of 407 nm at $40^{\circ}C$. Based upon experimental results such as $R_H/R_G$=ratio of 1.75 and the pattern of scattering intensity with a minimum, a core-shell type sphere model was suggested as a structure of the aggregate. According to this model, the radius of core part was estimated as 215 nm, the shell thickness as 192 nm, and the ratio of monomer density of the shell part to that of the core part as about 0.075.

• Korean Journal of Digital Imaging in Medicine
• /
• v.8 no.1
• /
• pp.51-55
• /
• 2006

The effects of Asaddition in amorphous selenium(a-Se) films for digital X-ray conversion material have been studied using the moving photocarrier grating(MPG) technique. This method utilizes the moving interference pattern generated by the superposition of the two frequency shifted laser beams for the illumination of the sample. This moving intensity grating induces a short circuit current, j$_{sc}$ in a-Se:As film. The transport parameters of the sample are extracted from the grating-velocity dependent short circuit current induced in the sample along the modulation direction. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic(As) additions have been obtained. We have found an Increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with X-ray sensitivity for a-Se:As device. The fabricated a-Se(0.3% As) device film exhibited the highest X-ray sensitivity out of 5 samples.

• Journal of Soil and Groundwater Environment
• /
• v.7 no.4
• /
• pp.48-58
• /
• 2002

As a pilot experiment for developing the monitoring system for oil spill from storage tank, previous approach of monitoring contaminated oil from mixed soil sample had the limitation that it cannot reflect the real situations of the contamination. In this study, more realistic contamination condition and water contents were considered. Fluorescence intensity was not affected by water contents. To acquire the stability of media, sand, Ca-bentonite, alumina, Fe-oxide, bead and silica were tested. Only sand was suitable to our system. These results should provide basic information for constructing reliable monitoring system.

• Journal of Sensor Science and Technology
• /
• v.11 no.1
• /
• pp.60-65
• /
• 2002

$ZnGa_2O_4$ thin film phosphors have been deposited using a pulsed laser deposition method on Si(100) substrates at a substrate temperature of $550^{\circ}C$ with oxygen pressures of 100mTorr, and subsequently to investigate their photoluminescence characteristics after post-annealed at $600^{\circ}C$ and $700^{\circ}C$. As a result for X-ray diffraction, $Ga_2O_3$ shape appeared with increasing annealing temperature. The luminescent spectra show a broad band extending from 350 to 600nm peaking at 460nm. A post-annealing treatment of $ZnGa_2O_4$ thin films led to the different shape of luminescent intensity and grain size.

• Journal of Embryo Transfer
• /
• v.27 no.1
• /
• pp.37-43
• /
• 2012

This study evaluated a method of sorting X and Y chromosomes based on size using the forward angle light scatter related refractive index (FSC) of a flow cytometer. Hanwoo bulls sperm were separated to X and Y chromosomes by the parameters of FSC or Hoechst 33342 intensity. As a result, using monitor program linked flow cytometry during sorting processing, the purities were $97{\pm}0.57$ or $96{\pm}0.67%$ for the X-fraction and $96{\pm}0.33$ or $97{\pm}1.33%$ for the Y-fraction in the two sperm sorting methods. There were no differences in the X and Y ratios (X and Y %) between the sperm sorting methods based on FSC or DNA content. The proportions of female and male embryos used for in vitro fertilization and development were $66.03{\pm}3.31$ or $69.37{\pm}1.41%$, and $70.56{\pm}2.42$ or $56.11{\pm}3.09%$ when sperm were processed using the sex sorting method by FSC or Hoechst 33342. In conclusion, further study is needed to determine the optimum procedure and improve the nozzle to enhancing sorting accuracy or efficiency. Also, the findings of this study do not negate the possibility that the difference method of sperm sorting cannot use a UV laser beam.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.25 no.9
• /
• pp.1400-1409
• /
• 2001

This paper describes a fiber optic sensor suitable for non-contact detection of ultrasonic waves. This sensor is based on a fiber optic Sagnac interferometer. Quadrature phase bias between two interfering laser beams in Sagnac loop is introduced by a polarization controller. A stable quadrature phase bias can be confirmed by observing the interferometer output versus phase bias. This method eliminates a digital signal processing for detection of ultrasonic waves using Sagnac interferometer. Interference intensity is affected by the frequency of ultrasonic waves and the time delay of Sagnac loop. Collimator is attached to the end of the probing fiber to focus the light beam onto the specimen surface and to collect the reflected light back into the fiber probe. Ultrasonic waves produced by conventional ultrasonic transducers are detected. This fiber optic sensor based on Sagnac interferometer is very effective for detection of small displacement with high frequency such as ultrasonic waves used in conventional non-destructive testing.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.187-187
• /
• 2013

양자점(Quuantum dot, QD)은 0차원 특성을 가지는 구조로 양자 구속 효과로 인하여 bulk와 는 다른 구조적, 광학적, 전기적 특성을 가지고 있다. InAs QD는 size와 barrier의 bandgap 조절을 이용하여 쉽게 bandgap을 바꿀 수 있는 장점이 있어 solar cell, semiconductor laser diode, infrared photodetector 등으로 많은 연구가 이루어지고 있다. 일반적으로 Stranski-Krastanov (SK) mode로 성장한 InAs QD는 보통 GaAs epilayer와의 lattice mismatch (7%)를 이용하여 성장을 하고 이로 인하여 strain을 가지고 있고 QD의 density와 stack이 높을수록 strain이 커진다. 하지만 sub-monolayer (SML) QD 같은 경우 wetting layer가 생기는 지점인 1.7 ML이하에서 성장되는 성장 방식으로 SK-QD보다는 작은 strain을 가지게 된다. 또 QD의 size가 작아 SK-QD보다 큰 bandgap을 가지고 있다. 본 연구에서는 분자선 에피택시(molecular beam epitaxy, MBE)를 이용하여 semi-insulating GaAs substrate 위에 InAs QD를 0.5/1/1.5/1.7/2/2.5 monolayer로 성장을 하였다. GaAs과 InAs의 성장온도와 성장속도는 각각 $590^{\circ}C$, 0.8 ML/s와 $480^{\circ}C$, 0.2 ML/s로 성장을 하였으며 적층사이의 interruption 시간은 10초로 고정하였고 10주기를 성장하였다. Photoluminescence (PL)측정 결과 SML-QD는 size에 따라서 energy가 1.328에서 1.314 eV로 약간 red shift를 하였고 SK-QD의 경우 1.2 eV의 energy정도로 0.1 eV이상 red shift 하였다. 이는 QD size에 의하여 energy shift가 있다고 사료된다. 또 wetting layer의 경우 1.41 eV의 energy를 가지는 것으로 확인 하였다. SML-QD는 SK-QD 보다 반치폭(full width at half maximum, FWHM)이 작은 것은 확인을 하였고 strain field의 감소로 해석된다. 하지만 SML-QD의 경우 SK-QD보다 상대적으로 작은 PL intensity를 가지고 있었다. 이를 개선하기 위해서는 보다 높은 QD density를 요구하게 되는데 growth temperature, V/III ratio, growth rate 등을 변화주어서 연구할 계획이다.