• Title/Summary/Keyword: laser intensity

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Damping patch placement on outdoor unit of air-conditioner by using structural intensity technique (구조 인텐서티 법을 이용한 에어컨 실외기의 제진재 적용)

  • Kim Kyu Sik;Kang Yeon June
    • Proceedings of the Acoustical Society of Korea Conference
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    • autumn
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    • pp.323-326
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    • 2004
  • 에어컨 실외기의 구조 방사 소음을 줄이기 위해 제진재를 적용함에 있어 구조 인텐서티(structural intensity)법을 사용할 수 있다. 에어컨 실외기 각 패널의 법선 방향의 속도는 레이져 스케닝 바이브로미터(laser scanning vibrometer)에 의해 측정되며, 측정된 데이터는 공간 주파수 영역(k-domain)으로 변환하여 구조 인텐서티 계산에 필요한 공간 미분값이 구해진다. 이러한 과정을 통하여 계산된 구조 인텐서티 중 반동 전단 구조인텐서티(reactive shearing structural intensity)값이 가장 높은 부분에 사각형 형상의 제진재를 적용한다. 본 논문은 패널에 비해 그 크기가 작은 제진재의 적용으로 에어컨 실외기의 구조 방사 소음을 줄일 수 있음을 보여준다.

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Characteristics of the Polarization-Dependent Holographic grating formation on Ag/As-Ge-Se-S Multi-Layer (Ag/As-Ge-Se-S 다층박막에서 편광상태에 따른 홀로그래피 격장 형성 특성)

  • Na, Sun-Woong;Lee, Jung-Tae;Yeo, Cheol-Ho;Lee, Young-Jong;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.04b
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    • pp.85-88
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    • 2002
  • We have carried out two-beam interference experiments to form holographic gratings on chalcogenide $Ag/As_{40}Se_{15}S_{35}Ge_{10}$ multi-layer. In this study, holographic gratings have been formed using He-Ne laser(632.8nm) under different polarization combinations(intensity polarization holography, phase polarization holography). The diffraction efficiency was obtained by +1st order intensity and formed grating structure was investigated using atomic force microscopy.

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Dependence of Thermal Annealing Conditions on Photoluminescence in $SiO_2$ films

  • Lee, Jae-Hee;Lee, Weon-Sik;Kim, Kwang-Il
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.102-102
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    • 1999
  • Visible photoluminescence(PL) in si-implanted SiO2 films on crystaline silicon were observed. Thermal oxide films of 1 ${\mu}{\textrm}{m}$ thickness on P-type crystal silicon were made and si+ ions were implanted with 200keV acceleration voltage on ti. Argon laser (wavelength 488nm) and PM tube were used for PL measurements. As annealing time increased at low temperature, the visible PL intensity are increased and the peak positions are changed. On the other hand, with increasing annealing time at high temperature, the visible PL intensity are disappeared. From the PL peaks and intensity changes, XRD results, and TEM observations, we will discuss the origin of PL in Si+-implanted SiO2 films with oxygen righ defects and silicon rich defects.

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UV and visible emission intensity control of ZnO thin films for light emitting device applications (발광소자 응용을 위한 ZnO 박막의 자외선 및 가시광 발광 세기 제어)

  • Kang, Hong-Seong;Shim, Eun-Sub;Kang, Jeong-Seok;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.108-111
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    • 2001
  • ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique for light emitting device applications. We have controlled the emission intensity of UV and visible light, depending on film thickness and various post-annealing time. UV emission became strong as the thickness of ZnO thin films increased. The intensity of visible light was strong as post-annealing temperature increased. The optical properties of the ZnO thin films were characterized by PL(photoluminescence) and the structural properties of the ZnO were characterized by XRD for the application of ZnO light emission device.

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A Study on the Detection of Surface Acoustic Waves by Noncontact Method (비접촉 방법에 의한 표면탄성파의 검출)

  • You, I.H.;Yoon, J.S.;Kim, D.I.
    • Journal of the Korean Society for Nondestructive Testing
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    • v.10 no.2
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    • pp.56-62
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    • 1990
  • Surface Acoustic Waves(SAW) are generated on silicon wafer and $YZ-LiTaO_3$ substrate and are detected by noncontact method. As wave sources two kinds of transducers are used : the wedge-type of 20.0 MHz and fabricated Interdigital Transducer(IDT) of 20.8 MHz. SAW are modulated by the optical chopper frequency and are syncronized with a laser beam. In signal processing, intensity variations of light due to the intensity of SAW are analyzed using lock- in amplifier. From the results, corresponding to the applied input power, the intensity variations of a deflected light by corrugations on the substrates are increased and saturation phenomenon is observed.

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Feasibility Study for the Monitoring of Urea in Dialysate Solution using Raman Spectroscopy

  • Kim, Jae-Jin;Hwang, Jin-Young;Kim, Yong-Dan;Chung, Ho-Eil
    • Bulletin of the Korean Chemical Society
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    • v.32 no.3
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    • pp.805-808
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    • 2011
  • We have determined the urea concentration in an aqueous solution using Raman spectroscopy by incorporating a Teflon tube as an effective intensity correction standard as well as sample container. A non-overlapping Teflon band was used as the reference peak to correct Raman intensity variations that occasionally resulted from changes in laser power. To increase the sensitivity, we positioned a copper reflector inside the Teflon tube to maximize the collection of Raman scattering. The obtained accuracy using Raman spectroscopy was 0.53 mM, close to the range of accuracy of previous NIR studies (0.15-0.52 mM).

Cross-Correlation Measurements of Phase Noise Induced by Relative Intensity Noise in Photodetectors

  • Cao, Zhewei;Yang, Chun;Zhou, Zhenghua
    • Journal of the Optical Society of Korea
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    • v.20 no.6
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    • pp.694-697
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    • 2016
  • Up-converted phase noise, which is induced by the low-frequency relative intensity noise (RIN) of a laser through AM-PM conversion within a photodetector (PD), is first measured here by means of a cross-correlation method. Our proposed measurement system can isolate the RIN-induced phase noise from noise contributions of other components, such as amplifiers, modulators, and mixers. In particular, shot noise and thermal noise generated from the PD are also suppressed by this method, so that standalone characteristics of the RIN-induced phase noise can be obtained. Experimental results clearly show the quantitative relationship between the RIN-induced phase noise and the incident optical power of the PD. Our findings indicate that the least RIN-induced phase noise appeared at the saturation point of the PD, which is about -162 dBc/Hz at 10 kHz offset.

UV and visible emission intensity control of ZnO thin films for light emitting device applications (발광소자 응용을 위한 ZnO 박막의 자외선 및 가시광 발광 세기 제어)

  • 강홍성;심은섭;강정석;이상렬
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.108-111
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    • 2001
  • ZnO thin films on (001) sapphire substrates knave been deposited by pulsed laser deposition(PLD) technique for light emitting device applications. We have controlled the emission intensity of UV and visible light, depending on film thickness and various post-annealing time. UV emission became strong as the thickness of ZnO thin films increased. The intensity of visible light was strong as post-annealing temperature increased. The optical properties of the ZnO thin films were characterized by PL(photoluminescence) and the structural properties of the ZnO were characterized by XRD for the application of ZnO light emission device.

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Design of Algorithm for maximum Signal Sensing by Optical System (광시스템에서 maximum 신호 Sensing을 위한 Algorithm 설계)

  • Choi, Do-Sun
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.3 no.4
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    • pp.70-75
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    • 2010
  • In this paper, was designed Algorithm Brent. this Algorithm can be used in the medical optical system. Optical signals are transmitted using optical fibers and integrated Optic. Developed Algorithm finds the maximum of the transmitted signal intensity. Optical system is made for Laser-Diode, HeNe-Laseer, controller for stepping motor, glass fiber and integrated Optic, etc. In this paper, two algorithms were investigated.

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Novel graphene-based optical MEMS accelerometer dependent on intensity modulation

  • Ahmadian, Mehdi;Jafari, Kian;Sharifi, Mohammad Javad
    • ETRI Journal
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    • v.40 no.6
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    • pp.794-801
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    • 2018
  • This paper proposes a novel graphene-based optical microelectromechanical systems MEMS accelerometer that is dependent on the intensity modulation and optical properties of graphene. The designed sensing system includes a multilayer graphene finger, a laser diode (LD) light source, a photodiode, and integrated optical waveguides. The proposed accelerometer provides several advantages, such as negligible cross-axis sensitivity, appropriate linearity behavior in the operation range, a relatively broad measurement range, and a significantly wider bandwidth when compared with other important contributions in the literature. Furthermore, the functional characteristics of the proposed device are designed analytically, and are then confirmed using numerical methods. Based on the simulation results, the functional characteristics are as follows: a mechanical sensitivity of 1,019 nm/g, an optical sensitivity of 145.7 %/g, a resonance frequency of 15,553 Hz, a bandwidth of 7 kHz, and a measurement range of ${\pm}10g$. Owing to the obtained functional characteristics, the proposed device is suitable for several applications in which high sensitivity and wide bandwidth are required simultaneously.