• Nuclear Engineering and Technology
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• 제55권12호
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• pp.4447-4464
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• 2023

This paper focuses on the development of a new computational model of the CNESTEN's TRIGA Mark II research reactor using the 3D continuous energy Monte-Carlo code TRIPOLI-4 (T4). This new model was developed to assess neutronic simulations and determine quantities of interest such as kinetic parameters of the reactor, control rods worth, power peaking factors and neutron flux distributions. This model is also a key tool used to accurately design new experiments in the TRIGA reactor, to analyze these experiments and to carry out sensitivity and uncertainty studies. The geometry and materials data, as part of the MCNP reference model, were used to build the T4 model. In this regard, the differences between the two models are mainly due to mathematical approaches of both codes. Indeed, the study presented in this article is divided into two parts: the first part deals with the development and the validation of the T4 model. The results obtained with the T4 model were compared to the existing MCNP reference model and to the experimental results from the Final Safety Analysis Report (FSAR). Different core configurations were investigated via simulations to test the computational model reliability in predicting the physical parameters of the reactor. As a fairly good agreement among the results was deduced, it seems reasonable to assume that the T4 model can accurately reproduce the MCNP calculated values. The second part of this study is devoted to the sensitivity and uncertainty (S/U) studies that were carried out to quantify the nuclear data uncertainty in the multiplication factor k_eff. For that purpose, the T4 model was used to calculate the sensitivity profiles of the k_eff to the nuclear data. The integrated-sensitivities were compared to the results obtained from the previous works that were carried out with MCNP and SCALE-6.2 simulation tools and differences of less than 5% were obtained for most of these quantities except for the C-graphite sensitivities. Moreover, the nuclear data uncertainties in the k_eff were derived using the COMAC-V2.1 covariance matrices library and the calculated sensitivities. The results have shown that the total nuclear data uncertainty in the k_eff is around 585 pcm using the COMAC-V2.1. This study also demonstrates that the contribution of zirconium isotopes to the nuclear data uncertainty in the k_eff is not negligible and should be taken into account when performing S/U analysis.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.80-81
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• 2012

Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.